TWI682692B - 扇出半導體封裝及其製造方法 - Google Patents
扇出半導體封裝及其製造方法 Download PDFInfo
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- TWI682692B TWI682692B TW105114045A TW105114045A TWI682692B TW I682692 B TWI682692 B TW I682692B TW 105114045 A TW105114045 A TW 105114045A TW 105114045 A TW105114045 A TW 105114045A TW I682692 B TWI682692 B TW I682692B
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/37—Effects of the manufacturing process
- H01L2924/37001—Yield
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20150065177 | 2015-05-11 | ||
| KR10-2015-0065177 | 2015-05-11 | ||
| KR1020150139682A KR20160132751A (ko) | 2015-05-11 | 2015-10-05 | 전자부품 패키지 및 그 제조방법 |
| KR10-2015-0139682 | 2015-10-05 | ||
| KR1020160047455A KR102002071B1 (ko) | 2015-05-11 | 2016-04-19 | 팬-아웃 반도체 패키지 및 그 제조방법 |
| KR10-2016-0047455 | 2016-04-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201709777A TW201709777A (zh) | 2017-03-01 |
| TWI682692B true TWI682692B (zh) | 2020-01-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| TW105114045A TWI682692B (zh) | 2015-05-11 | 2016-05-06 | 扇出半導體封裝及其製造方法 |
Country Status (3)
| Country | Link |
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| JP (2) | JP6478943B2 (enExample) |
| KR (2) | KR20160132751A (enExample) |
| TW (1) | TWI682692B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12456670B2 (en) | 2022-07-08 | 2025-10-28 | Innolux Corporation | Electronic device |
| US12489046B2 (en) | 2021-11-08 | 2025-12-02 | Innolux Corporation | Electronic device with improved electricial property |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101897520B1 (ko) * | 2016-11-28 | 2018-09-12 | 주식회사 네패스 | 신뢰성을 가지는 반도체 패키지 및 이의 제조방법 |
| JP6815880B2 (ja) * | 2017-01-25 | 2021-01-20 | 株式会社ディスコ | 半導体パッケージの製造方法 |
| US10644046B2 (en) | 2017-04-07 | 2020-05-05 | Samsung Electronics Co., Ltd. | Fan-out sensor package and optical fingerprint sensor module including the same |
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| US20180337454A1 (en) * | 2017-05-16 | 2018-11-22 | Samsung Electro-Mechanics Co., Ltd. | Filter module and front end module including the same |
| CN108878380B (zh) | 2017-05-16 | 2022-01-21 | 三星电机株式会社 | 扇出型电子器件封装件 |
| US20190006305A1 (en) * | 2017-06-29 | 2019-01-03 | Powertech Technology Inc. | Semiconductor package structure and manufacturing method thereof |
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| KR102018616B1 (ko) * | 2017-07-04 | 2019-09-06 | 삼성전자주식회사 | 반도체 장치 |
| KR102081086B1 (ko) * | 2017-07-07 | 2020-02-25 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 모듈 |
| KR20190013051A (ko) | 2017-07-31 | 2019-02-11 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| US10453821B2 (en) * | 2017-08-04 | 2019-10-22 | Samsung Electronics Co., Ltd. | Connection system of semiconductor packages |
| KR102440119B1 (ko) * | 2017-08-10 | 2022-09-05 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
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| WO2019111873A1 (ja) | 2017-12-05 | 2019-06-13 | 株式会社村田製作所 | モジュール |
| KR101982058B1 (ko) | 2017-12-06 | 2019-05-24 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
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| DE102019117844A1 (de) | 2018-09-27 | 2020-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrierte-schaltung-package und verfahren |
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| EP3905315A4 (en) | 2019-03-07 | 2022-10-19 | Absolics Inc. | PACKAGING SUBSTRATE AND SEMICONDUCTOR DEVICE EQUIPPED WITH THE SAME |
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| ES3033139T3 (en) | 2019-03-12 | 2025-07-31 | Absolics Inc | Packaging substrate and semiconductor device comprising same |
| CN113272951B (zh) | 2019-03-12 | 2024-04-16 | 爱玻索立克公司 | 封装基板及包括其的半导体装置 |
| KR102715473B1 (ko) | 2019-03-13 | 2024-10-10 | 삼성전자주식회사 | 패키지 온 패키지 및 이를 포함하는 패키지 연결 시스템 |
| EP3910667B1 (en) | 2019-03-29 | 2025-08-13 | Absolics Inc. | Packaging glass substrate for semiconductor, packaging substrate for semiconductor, and semiconductor device |
| KR20200129671A (ko) | 2019-05-09 | 2020-11-18 | 삼성전기주식회사 | 패키지 온 패키지 및 이를 포함하는 패키지 연결 시스템 |
| KR20210020673A (ko) * | 2019-08-16 | 2021-02-24 | 삼성전기주식회사 | 인쇄회로기판 |
| KR20220089715A (ko) | 2019-08-23 | 2022-06-28 | 앱솔릭스 인코포레이티드 | 패키징 기판 및 이를 포함하는 반도체 장치 |
| WO2021117191A1 (ja) * | 2019-12-12 | 2021-06-17 | 太陽誘電株式会社 | 部品モジュールおよびその製造方法 |
| KR20220154675A (ko) * | 2020-03-13 | 2022-11-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| WO2021205926A1 (ja) * | 2020-04-08 | 2021-10-14 | ローム株式会社 | 半導体装置 |
| US11183446B1 (en) * | 2020-08-17 | 2021-11-23 | Qualcomm Incorporated | X.5 layer substrate |
| CN220065432U (zh) * | 2020-12-14 | 2023-11-21 | 株式会社村田制作所 | 电子部件封装 |
| KR102886060B1 (ko) * | 2022-11-22 | 2025-11-12 | 앱솔릭스 인코포레이티드 | 패키징 기판 및 이를 포함하는 반도체 패키지 |
| JP2025020919A (ja) * | 2023-07-31 | 2025-02-13 | 株式会社東芝 | 半導体装置、回路基板、および回路基板の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI343105B (en) * | 2006-08-28 | 2011-06-01 | Micron Technology Inc | Metal core foldover package structures, systems including same and methods of fabrication |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4167001B2 (ja) * | 2002-04-15 | 2008-10-15 | 日本特殊陶業株式会社 | 配線基板の製造方法 |
| JP4028749B2 (ja) * | 2002-04-15 | 2007-12-26 | 日本特殊陶業株式会社 | 配線基板 |
| JP2006049457A (ja) * | 2004-08-03 | 2006-02-16 | Dt Circuit Technology Co Ltd | 部品内蔵配線板、部品内蔵配線板の製造方法 |
| JP2007123524A (ja) * | 2005-10-27 | 2007-05-17 | Shinko Electric Ind Co Ltd | 電子部品内蔵基板 |
| JP5326269B2 (ja) * | 2006-12-18 | 2013-10-30 | 大日本印刷株式会社 | 電子部品内蔵配線板、及び電子部品内蔵配線板の放熱方法 |
| TW200917446A (en) * | 2007-10-01 | 2009-04-16 | Phoenix Prec Technology Corp | Packaging substrate structure having electronic component embedded therein and fabricating method thereof |
| JPWO2010101167A1 (ja) * | 2009-03-05 | 2012-09-10 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| KR101077410B1 (ko) * | 2009-05-15 | 2011-10-26 | 삼성전기주식회사 | 방열부재를 구비한 전자부품 내장형 인쇄회로기판 및 그 제조방법 |
| US8901724B2 (en) * | 2009-12-29 | 2014-12-02 | Intel Corporation | Semiconductor package with embedded die and its methods of fabrication |
| WO2011114766A1 (ja) * | 2010-03-16 | 2011-09-22 | 日本電気株式会社 | 機能素子内蔵基板 |
| JP6152254B2 (ja) * | 2012-09-12 | 2017-06-21 | 新光電気工業株式会社 | 半導体パッケージ、半導体装置及び半導体パッケージの製造方法 |
| JP6200178B2 (ja) * | 2013-03-28 | 2017-09-20 | 新光電気工業株式会社 | 電子部品内蔵基板及びその製造方法 |
| US9066424B2 (en) * | 2013-07-15 | 2015-06-23 | Hong Kong Applied Science and Technology Research Institute Company Limited | Partitioned hybrid substrate for radio frequency applications |
| KR101514539B1 (ko) * | 2013-08-29 | 2015-04-22 | 삼성전기주식회사 | 전자부품 내장기판 |
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2015
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- 2016-05-06 TW TW105114045A patent/TWI682692B/zh active
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI343105B (en) * | 2006-08-28 | 2011-06-01 | Micron Technology Inc | Metal core foldover package structures, systems including same and methods of fabrication |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12489046B2 (en) | 2021-11-08 | 2025-12-02 | Innolux Corporation | Electronic device with improved electricial property |
| US12456670B2 (en) | 2022-07-08 | 2025-10-28 | Innolux Corporation | Electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6478943B2 (ja) | 2019-03-06 |
| KR20160132751A (ko) | 2016-11-21 |
| KR102002071B1 (ko) | 2019-07-22 |
| TW201709777A (zh) | 2017-03-01 |
| JP2016213466A (ja) | 2016-12-15 |
| JP6683780B2 (ja) | 2020-04-22 |
| KR20160132763A (ko) | 2016-11-21 |
| JP2018198333A (ja) | 2018-12-13 |
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