TWI655695B - 以奈米結構連接和結合相鄰層 - Google Patents
以奈米結構連接和結合相鄰層 Download PDFInfo
- Publication number
- TWI655695B TWI655695B TW105136856A TW105136856A TWI655695B TW I655695 B TWI655695 B TW I655695B TW 105136856 A TW105136856 A TW 105136856A TW 105136856 A TW105136856 A TW 105136856A TW I655695 B TWI655695 B TW I655695B
- Authority
- TW
- Taiwan
- Prior art keywords
- nanostructures
- substrate
- wafer
- nanostructure
- nano
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0008—Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/66—Conductive materials thereof
- H10W70/664—Carbon-based materials, e.g. fullerenes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
- B32B2037/1253—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives curable adhesive
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/302—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/706—Anisotropic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/02—Temperature
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/12—Pressure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
- B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
- B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2313/00—Elements other than metals
- B32B2313/04—Carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
- H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/321—Structures or relative sizes of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/321—Structures or relative sizes of die-attach connectors
- H10W72/325—Die-attach connectors having a filler embedded in a matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/934—Cross-sectional shape, i.e. in side view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24174—Structurally defined web or sheet [e.g., overall dimension, etc.] including sheet or component perpendicular to plane of web or sheet
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Thermal Sciences (AREA)
- Fluid Mechanics (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Laminated Bodies (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97185907P | 2007-09-12 | 2007-09-12 | |
| US60/971,859 | 2007-09-12 | ||
| US97404507P | 2007-09-20 | 2007-09-20 | |
| US60/974,045 | 2007-09-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201709366A TW201709366A (zh) | 2017-03-01 |
| TWI655695B true TWI655695B (zh) | 2019-04-01 |
Family
ID=40452247
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105136856A TWI655695B (zh) | 2007-09-12 | 2008-09-12 | 以奈米結構連接和結合相鄰層 |
| TW104130921A TWI564980B (zh) | 2007-09-12 | 2008-09-12 | 以奈米結構連接和結合相鄰層 |
| TW097135028A TWI511208B (zh) | 2007-09-12 | 2008-09-12 | 以奈米結構連接和結合相鄰層 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104130921A TWI564980B (zh) | 2007-09-12 | 2008-09-12 | 以奈米結構連接和結合相鄰層 |
| TW097135028A TWI511208B (zh) | 2007-09-12 | 2008-09-12 | 以奈米結構連接和結合相鄰層 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US8106517B2 (enExample) |
| EP (1) | EP2197782B1 (enExample) |
| JP (4) | JP5535915B2 (enExample) |
| KR (1) | KR101487346B1 (enExample) |
| CN (2) | CN101827782B (enExample) |
| RU (1) | RU2010114227A (enExample) |
| TW (3) | TWI655695B (enExample) |
| WO (1) | WO2009035393A1 (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1874986B1 (en) * | 2005-04-25 | 2013-01-23 | Smoltek AB | Controlled growth of a nanostructure on a substrate, and electron emission devices based on the same |
| US7777291B2 (en) * | 2005-08-26 | 2010-08-17 | Smoltek Ab | Integrated circuits having interconnects and heat dissipators based on nanostructures |
| WO2009035393A1 (en) | 2007-09-12 | 2009-03-19 | Smoltek Ab | Connecting and bonding adjacent layers with nanostructures |
| EP2250661B1 (en) * | 2008-02-25 | 2020-04-08 | Smoltek AB | Deposition and selective removal of conducting helplayer for nanostructure processing |
| US8568027B2 (en) * | 2009-08-26 | 2013-10-29 | Ut-Battelle, Llc | Carbon nanotube temperature and pressure sensors |
| US20110076841A1 (en) * | 2009-09-30 | 2011-03-31 | Kahen Keith B | Forming catalyzed ii-vi semiconductor nanowires |
| KR101709959B1 (ko) * | 2010-11-17 | 2017-02-27 | 삼성전자주식회사 | 범프 구조물, 이를 갖는 반도체 패키지 및 반도체 패키지의 제조 방법 |
| TW201225341A (en) | 2010-12-13 | 2012-06-16 | Hon Hai Prec Ind Co Ltd | Light-emitting semiconductor chip and method for manufacturing the same |
| TWI438930B (zh) * | 2010-12-13 | 2014-05-21 | 鴻海精密工業股份有限公司 | 半導體發光晶片及其製造方法 |
| CN102569623A (zh) * | 2010-12-14 | 2012-07-11 | 鸿富锦精密工业(深圳)有限公司 | 半导体发光芯片及其制造方法 |
| US8558209B1 (en) | 2012-05-04 | 2013-10-15 | Micron Technology, Inc. | Memory cells having-multi-portion data storage region |
| US9212960B2 (en) * | 2012-10-22 | 2015-12-15 | The Board Of Trustees Of The Leland Stanford Junior University | Nanostructures with strain-induced resistance |
| US9249014B2 (en) * | 2012-11-06 | 2016-02-02 | Infineon Technologies Austria Ag | Packaged nano-structured component and method of making a packaged nano-structured component |
| CN104903998A (zh) * | 2013-01-09 | 2015-09-09 | 株式会社日立制作所 | 半导体装置及其制造方法 |
| US8907479B2 (en) | 2013-03-11 | 2014-12-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Treating copper surfaces for packaging |
| US20160172327A1 (en) * | 2013-06-21 | 2016-06-16 | University Of Connecticut | Low-Temperature Bonding and Sealing With Spaced Nanorods |
| US8912637B1 (en) * | 2013-09-23 | 2014-12-16 | Texas Instruments Incorporated | Self-adhesive die |
| CN106461473A (zh) | 2013-12-17 | 2017-02-22 | 小利兰·斯坦福大学托管委员会 | 基于表面面积的压力感测 |
| WO2015120773A1 (en) | 2014-02-13 | 2015-08-20 | Honeywell International Inc. | Compressible thermal interface materials |
| US10329435B2 (en) | 2014-07-01 | 2019-06-25 | University Of Utah Research Foundation | Electrothermal coating with nanostructures mixture and method for making the same |
| US10722174B2 (en) | 2014-07-11 | 2020-07-28 | The Board Of Trustees Of The Leland Stanford Junior University | Skin-conformal sensors |
| US9625330B2 (en) | 2014-08-01 | 2017-04-18 | The Board Of Trustees Of The Leland Stanford Junior University | Methods and apparatus concerning multi-tactile sensitive (E-skin) pressure sensors |
| US9397023B2 (en) * | 2014-09-28 | 2016-07-19 | Texas Instruments Incorporated | Integration of heat spreader for beol thermal management |
| US10002826B2 (en) | 2014-10-27 | 2018-06-19 | Taiwan Semiconductor Manufacturing Company | Semiconductor device structure with conductive pillar and conductive line and method for forming the same |
| JP6165127B2 (ja) * | 2014-12-22 | 2017-07-19 | 三菱重工工作機械株式会社 | 半導体装置及び半導体装置の製造方法 |
| US9544998B1 (en) * | 2015-09-14 | 2017-01-10 | The Boeing Company | Growth of carbon nanotube (CNT) leads on circuits in substrate-free continuous chemical vapor deposition (CVD) process |
| US20170162536A1 (en) | 2015-12-03 | 2017-06-08 | International Business Machines Corporation | Nanowires for pillar interconnects |
| MX393621B (es) | 2016-03-08 | 2025-03-24 | Honeywell Int Inc | Material de camibo de fase. |
| JP6419362B1 (ja) * | 2016-06-10 | 2018-11-07 | リンテック オブ アメリカ インコーポレーテッドLintec of America, Inc. | ナノファイバーシート |
| DE102016220664A1 (de) * | 2016-10-21 | 2018-04-26 | Robert Bosch Gmbh | Verbindungsmittel zum Verbinden der Anschlüsse eines integrierten Schaltkreises oder eines diskreten Halbleiters |
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| US10381049B2 (en) * | 2017-08-14 | 2019-08-13 | Seagate Technology Llc | Data storage device housing components having a polymeric element attached to a surface thereof |
| US11041103B2 (en) | 2017-09-08 | 2021-06-22 | Honeywell International Inc. | Silicone-free thermal gel |
| CA2985254A1 (en) * | 2017-11-14 | 2019-05-14 | Vuereal Inc | Integration and bonding of micro-devices into system substrate |
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| JP6982308B2 (ja) * | 2017-12-27 | 2021-12-17 | 株式会社ソフイア | 遊技機 |
| US10177058B1 (en) | 2018-01-26 | 2019-01-08 | Powertech Technology Inc. | Encapsulating composition, semiconductor package and manufacturing method thereof |
| US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
| US10833048B2 (en) * | 2018-04-11 | 2020-11-10 | International Business Machines Corporation | Nanowire enabled substrate bonding and electrical contact formation |
| CN109796903B (zh) * | 2019-03-08 | 2024-06-21 | 深圳市润沃自动化工程有限公司 | 一种异向性导电胶结构及其生产方法 |
| US11195811B2 (en) * | 2019-04-08 | 2021-12-07 | Texas Instruments Incorporated | Dielectric and metallic nanowire bond layers |
| US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
| GB201906936D0 (en) * | 2019-05-16 | 2019-07-03 | Quantum Motion Tech Limited | Processor element for quantum information processor |
| DE102020116671A1 (de) | 2020-06-24 | 2021-12-30 | Nanowired Gmbh | Waferbonding |
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- 2008-09-10 EP EP08794128.2A patent/EP2197782B1/en active Active
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- 2008-09-12 US US12/210,091 patent/US8106517B2/en active Active
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- 2012-08-09 US US13/570,634 patent/US8815332B2/en active Active
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- 2014-04-24 JP JP2014090161A patent/JP2014177398A/ja active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| US8253253B2 (en) | 2012-08-28 |
| KR101487346B1 (ko) | 2015-01-28 |
| JP2017199911A (ja) | 2017-11-02 |
| TWI511208B (zh) | 2015-12-01 |
| US8815332B2 (en) | 2014-08-26 |
| TWI564980B (zh) | 2017-01-01 |
| CN104600057B (zh) | 2018-11-02 |
| JP6149077B2 (ja) | 2017-06-14 |
| EP2197782A4 (en) | 2017-11-15 |
| WO2009035393A1 (en) | 2009-03-19 |
| US20120301607A1 (en) | 2012-11-29 |
| KR20100063063A (ko) | 2010-06-10 |
| EP2197782B1 (en) | 2020-03-04 |
| CN104600057A (zh) | 2015-05-06 |
| US20090072408A1 (en) | 2009-03-19 |
| CN101827782B (zh) | 2014-12-10 |
| US20120125537A1 (en) | 2012-05-24 |
| US8106517B2 (en) | 2012-01-31 |
| CN101827782A (zh) | 2010-09-08 |
| US20140360661A1 (en) | 2014-12-11 |
| TW201601230A (zh) | 2016-01-01 |
| RU2010114227A (ru) | 2011-10-20 |
| JP2016006902A (ja) | 2016-01-14 |
| JP5535915B2 (ja) | 2014-07-02 |
| JP2011501725A (ja) | 2011-01-13 |
| EP2197782A1 (en) | 2010-06-23 |
| TW200913105A (en) | 2009-03-16 |
| JP2014177398A (ja) | 2014-09-25 |
| TW201709366A (zh) | 2017-03-01 |
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