TWI654136B - 基板內矽佈植及其之矽前驅物組合物之供給 - Google Patents

基板內矽佈植及其之矽前驅物組合物之供給

Info

Publication number
TWI654136B
TWI654136B TW106143532A TW106143532A TWI654136B TW I654136 B TWI654136 B TW I654136B TW 106143532 A TW106143532 A TW 106143532A TW 106143532 A TW106143532 A TW 106143532A TW I654136 B TWI654136 B TW I654136B
Authority
TW
Taiwan
Prior art keywords
group
gas
ruthenium
precursor
sih
Prior art date
Application number
TW106143532A
Other languages
English (en)
Chinese (zh)
Other versions
TW201808803A (zh
Inventor
唐瀛
D. 史維尼約瑟夫
陳天牛
J. 麥爾詹姆士
S. 瑞理查
拜爾歐勒格
N. 葉達夫夏拉德
肯恩羅伯特
Original Assignee
美商恩特葛瑞斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 美商恩特葛瑞斯股份有限公司 filed Critical 美商恩特葛瑞斯股份有限公司
Publication of TW201808803A publication Critical patent/TW201808803A/zh
Application granted granted Critical
Publication of TWI654136B publication Critical patent/TWI654136B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
TW106143532A 2013-08-16 2014-08-15 基板內矽佈植及其之矽前驅物組合物之供給 TWI654136B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361866918P 2013-08-16 2013-08-16
US61/866,918 2013-08-16

Publications (2)

Publication Number Publication Date
TW201808803A TW201808803A (zh) 2018-03-16
TWI654136B true TWI654136B (zh) 2019-03-21

Family

ID=52468713

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103128139A TWI636011B (zh) 2013-08-16 2014-08-15 基板內矽佈植及其之矽前驅物組合物之供給
TW106143532A TWI654136B (zh) 2013-08-16 2014-08-15 基板內矽佈植及其之矽前驅物組合物之供給

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW103128139A TWI636011B (zh) 2013-08-16 2014-08-15 基板內矽佈植及其之矽前驅物組合物之供給

Country Status (8)

Country Link
US (1) US11062906B2 (enExample)
EP (1) EP3033765A4 (enExample)
JP (2) JP2016534560A (enExample)
KR (1) KR102306410B1 (enExample)
CN (1) CN105637616A (enExample)
SG (2) SG11201601015RA (enExample)
TW (2) TWI636011B (enExample)
WO (1) WO2015023903A1 (enExample)

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US9620376B2 (en) * 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
TWI707378B (zh) * 2016-04-08 2020-10-11 美商瓦里安半導體設備公司 將加工物質植入工件中與將摻雜劑植入工件中的方法及用於加工工件的設備
US20170294314A1 (en) * 2016-04-11 2017-10-12 Aaron Reinicker Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current
US20170330725A1 (en) 2016-05-13 2017-11-16 Axcelis Technologies, Inc. Lanthanated tungsten ion source and beamline components
KR102202345B1 (ko) * 2016-05-13 2021-01-12 엔테그리스, 아이엔씨. 질소 이온 주입에서의 이온 소스 성능 개선을 위한 플루오르화된 조성물
US10361081B2 (en) * 2016-11-24 2019-07-23 Axcelis Technologies, Inc. Phosphine co-gas for carbon implants
US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US10177026B2 (en) * 2016-11-29 2019-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and fabrication method therefor
CN113261074B (zh) * 2018-12-15 2025-01-07 恩特格里斯公司 氟离子植入方法和系统
JP7416270B2 (ja) * 2020-08-26 2024-01-17 株式会社Sumco エピタキシャルシリコンウェーハ及びその製造方法、並びに半導体デバイスの製造方法
US11881376B2 (en) * 2020-10-02 2024-01-23 Entegris, Inc. Method and systems useful for producing aluminum ions

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