TWI646662B - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device Download PDF

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Publication number
TWI646662B
TWI646662B TW104119865A TW104119865A TWI646662B TW I646662 B TWI646662 B TW I646662B TW 104119865 A TW104119865 A TW 104119865A TW 104119865 A TW104119865 A TW 104119865A TW I646662 B TWI646662 B TW I646662B
Authority
TW
Taiwan
Prior art keywords
movable charge
movable
active region
layer
charge collecting
Prior art date
Application number
TW104119865A
Other languages
English (en)
Chinese (zh)
Other versions
TW201611196A (zh
Inventor
谷口泰弘
川嶋泰彥
葛西秀男
品川裕
櫻井良多郎
奧山幸祐
Original Assignee
日商芙洛提亞股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商芙洛提亞股份有限公司 filed Critical 日商芙洛提亞股份有限公司
Publication of TW201611196A publication Critical patent/TW201611196A/zh
Application granted granted Critical
Publication of TWI646662B publication Critical patent/TWI646662B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
TW104119865A 2014-06-20 2015-06-18 Non-volatile semiconductor memory device TWI646662B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-127706 2014-06-20
JP2014127706A JP6286292B2 (ja) 2014-06-20 2014-06-20 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
TW201611196A TW201611196A (zh) 2016-03-16
TWI646662B true TWI646662B (zh) 2019-01-01

Family

ID=54935562

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104119865A TWI646662B (zh) 2014-06-20 2015-06-18 Non-volatile semiconductor memory device

Country Status (4)

Country Link
US (1) US10680001B2 (https=)
JP (1) JP6286292B2 (https=)
TW (1) TWI646662B (https=)
WO (1) WO2015194582A1 (https=)

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CN109565201B (zh) * 2016-08-09 2021-06-18 日本电产株式会社 马达
KR20180120870A (ko) 2017-04-27 2018-11-07 삼성전자주식회사 반도체 소자
JP7462389B2 (ja) * 2019-07-18 2024-04-05 ローム株式会社 不揮発性半導体記憶装置
KR102864662B1 (ko) 2020-12-30 2025-09-25 에스케이하이닉스 주식회사 비휘발성 메모리 장치

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Also Published As

Publication number Publication date
US10680001B2 (en) 2020-06-09
JP2016009692A (ja) 2016-01-18
JP6286292B2 (ja) 2018-02-28
WO2015194582A1 (ja) 2015-12-23
US20170133391A1 (en) 2017-05-11
TW201611196A (zh) 2016-03-16

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