TWI627716B - 系統級封裝扇出堆疊架構及製程流程 - Google Patents

系統級封裝扇出堆疊架構及製程流程 Download PDF

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Publication number
TWI627716B
TWI627716B TW105106201A TW105106201A TWI627716B TW I627716 B TWI627716 B TW I627716B TW 105106201 A TW105106201 A TW 105106201A TW 105106201 A TW105106201 A TW 105106201A TW I627716 B TWI627716 B TW I627716B
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die
rdl
molding compound
package
conductive pillars
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TW105106201A
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TW201705400A (zh
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軍 翟
胡坤忠
冠宇 賴
孟枝 龐
仲崇華
梁世暎
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蘋果公司
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Abstract

本發明描述封裝及形成方法。在一實施例中，一種系統級封裝(SiP)包括第一及第二重佈層(RDL)，以及附接至該第一RDL之前側及背側之複數個晶粒。該等第一及第二RDL與自該第一RDL之該背側延伸至該第二RDL之一前側的複數個導電柱耦接在一起。

Description

系統級封裝扇出堆疊架構及製程流程
本文中所描述之實施例係關於半導體封裝。更特定言之，實施例係關於系統級封裝(SiP)結構及製造方法。
針對諸如行動電話、個人數位助理(PDA)、數位攝影機、攜帶型播放器、遊戲裝置及其他行動裝置之攜帶型及行動電子裝置的當前市場需求要求將較多效能及特徵整合至愈來愈小之空間中。因此，諸如系統級封裝(SiP)之各種多晶粒或組件封裝解決方案已變得較風行以滿足針對較高晶粒/組件密度裝置之需求。存在將多個晶粒配置於一SiP中之許多不同可能性。舉例而言，晶粒在SiP結構中之垂直整合已演進成2.5D解決方案及3D解決方案。在2.5D解決方案中，多個晶粒可覆晶接合於包括通孔以及扇出佈線之中介層上。在3D解決方案中，多個晶粒可在SiP基板上堆疊於彼此之頂部上，且與晶片外導線接合件或焊料凸塊連接。
另外存在用於整合式產品的各種程度之SiP整合。在一個實施中，將數個小SiP安裝於一較大SiP中，此被稱為嵌層封裝(package in package；PiP)。在另一實施中，將一SiP安裝於另一SiP之頂部上，此被稱為疊層封裝(package on package；PoP)。SiP結構及PoP結構可組裝於中介層上以扇出用於整合式產品之電端子。
本發明描述扇出系統級封裝(SiP)結構及製造方法。在一實施例中，一種封裝包括一第一(例如，頂部)重佈層(RDL)，及附接至該第一RDL之一前側之一第一(例如，頂部)晶粒。該第一RDL之一重佈線沿著該第一晶粒之一底部表面直接地形成於一第一接觸墊上。一第一模製化合物在該第一RDL之該前側上囊封該第一晶粒。一第二(例如，底部)晶粒之一頂部表面附接至該第一RDL之一背側。複數個導電柱140自該第一RDL之該背側延伸至一第二RDL之一前側，且一第二模製化合物在該第一RDL之該背側與該第二RDL之該前側之間囊封該第二晶粒及該複數個導電柱。複數個導電凸塊可形成於該第二RDL之一背側上。
在一實施例中，該第一模製化合物不完全地覆蓋該第一晶粒之一頂部表面。在一實施例中，該第二模製化合物不完全地覆蓋鄰近於該第二RDL的該第二晶粒之一底部表面。在此等組態中，此可允許縮減該封裝之總z高度。將重佈線直接地形成於該晶粒之接觸墊上亦可縮減z高度。經由使用RDL進行電佈線可另外有助於縮減封裝z高度。在一實施例中，該第二RDL包括直接地形成於該複數個導電柱中之一者上的另一重佈線。
該第二(底部)晶粒可背面朝向或向上朝向該第一RDL。在一實施例中，該第二晶粒係運用一晶粒附接膜而附接至該第一RDL。舉例而言，此第二晶粒可為背面朝向的。該第二RDL可包括直接地形成於一背面朝向之第二晶粒之一導電接點上的另一重佈線。在一實施例中，該背面朝向之第二晶粒之一導電接點的一底部表面與導電柱陣列之底部表面共面。
在一實施例中，該第二晶粒係運用一焊料凸塊而接合至該第一RDL。舉例而言，此第二晶粒可為向上朝向的。在一實施例中，該第 二模製化合物不完全地覆蓋鄰近於該第二RDL的該向上朝向之第二晶粒之一底部表面。
在一實施例中，一第三晶粒可附接至該第二RDL之該前側。該第三晶粒可連同該第二(底部)晶粒及該複數個導電柱一起囊封於該模製化合物中。在一實施例中，該第二RDL之另一重佈線沿著該第三晶粒之一底部表面直接地形成於一第三接觸墊上。
在一實施例中，一種形成一扇出系統級封裝之方法包括：將一第一晶粒(例如，頂部晶粒)置放於一載體基板上；在該載體基板上運用一第一模製化合物來囊封該第一晶粒；移除該載體基板；及將一第一重佈層(RDL)形成於該第一模製化合物及該第一晶粒上。該第一RDL之一重佈線可沿著該第一晶粒之一底部表面直接地形成於一第一接觸墊上。可將複數個導電柱形成於該第一RDL之一背側上，且在該複數個導電柱之一周界內部將第二晶粒附接至該第一RDL之該背側。可接著運用一第二模製化合物來囊封該第二晶粒及該複數個導電柱，隨後將一第二RDL形成於該第二模製化合物及該複數個導電柱上。在一實施例中，縮減該第一模製化合物之一厚度以曝露該第一晶粒，且視情況縮減該第一晶粒之一厚度。在一實施例中，在將該第二晶粒及該複數個導電柱囊封於該第二模製化合物中之後及在形成該第二RDL之前縮減該第二模製化合物及該複數個導電柱之一厚度。亦可視情況縮減該第二晶粒之一厚度。在一實施例中，在形成該第二RDL之前在該第二模製化合物中形成開口以曝露該第二晶粒之著陸墊。
形成該第二RDL可包括將複數個重佈線直接地形成於該複數個導電柱上。形成該第二RDL可包括將一重佈線直接地形成於該第二晶粒之一接觸墊上。在一實施例中，運用一黏接層將一背面朝向之第二晶粒附接至該第一RDL。
在一實施例中，可在形成該封裝期間使用一第二載體基板。此可 包括將一第三晶粒或組件置放於一第二載體基板上，及在該載體基板上運用該第二模製化合物來囊封該第三晶粒或組件。可在運用該第二模製化合物來囊封該第二晶粒、該複數個導電柱及該第三晶粒或組件之後移除該第二載體基板，隨後將該第二RDL形成於該第三晶粒或組件、該第二模製化合物及該複數個導電柱上。
100‧‧‧封裝
102‧‧‧載體基板
110‧‧‧頂部晶粒
111‧‧‧晶粒或組件之頂部表面
112‧‧‧接觸墊
113‧‧‧晶粒或組件或接觸墊之底部表面
114‧‧‧鈍化層
116‧‧‧組件
120‧‧‧第一模製化合物
121‧‧‧第一模製化合物之頂部表面
122‧‧‧第一模製化合物之底部表面
125‧‧‧經重建晶圓或面板
130‧‧‧第一重佈層(RDL)/頂部RDL
131‧‧‧第一重佈層(RDL)之前表面
132‧‧‧重佈線
133‧‧‧第一重佈層(RDL)之背側
136A‧‧‧凸塊下金屬層(UBM)墊
136B‧‧‧凸塊下金屬層(UBM)墊
138‧‧‧介電層
140‧‧‧導電柱
141‧‧‧導電柱之底部表面
150‧‧‧底部晶粒
151‧‧‧晶粒之頂部表面
152‧‧‧導電接點
153‧‧‧晶粒之底部表面
154‧‧‧鈍化層
155‧‧‧導電接點之底部表面
160‧‧‧晶粒附接膜
162‧‧‧導電凸塊
170‧‧‧第二模製化合物
171‧‧‧第二模製化合物之背側
172‧‧‧開口
180‧‧‧第二重佈層(RDL)
181‧‧‧前側
182‧‧‧重佈線
183‧‧‧背側
184‧‧‧重佈線之接觸墊
186‧‧‧第二重佈層(RDL)之著陸墊
188‧‧‧介電層
190‧‧‧導電凸塊
202‧‧‧載體基板
212‧‧‧接觸墊
213‧‧‧接觸墊及鈍化層之底部表面
214‧‧‧鈍化層
250‧‧‧底部晶粒
270‧‧‧第二模製化合物
圖1為根據一實施例之安裝於載體基板上之複數個晶粒及一組件的橫截面側視圖說明。
圖2為根據一實施例之囊封於模製化合物中之複數個晶粒及一組件的橫截面側視圖說明。
圖3為根據一實施例之在移除載體基板之後的經重建結構的橫截面側視圖說明。
圖4為根據一實施例之形成於經重建結構上之頂部RDL的橫截面側視圖說明。
圖5為根據一實施例之導電柱在頂部RDL上之形成的橫截面側視圖說明。
圖6A為根據一實施例之附接至頂部RDL之背面朝向晶粒的橫截面側視圖說明。
圖6B為根據一實施例之附接至頂部RDL之向上朝向晶粒的橫截面側視圖說明。
圖7A為根據一實施例之囊封於模製化合物中之背面朝向晶粒及複數個導電柱的橫截面側視圖說明。
圖7B為根據一實施例之囊封於模製化合物中之向上朝向晶粒及複數個導電柱的橫截面側視圖說明。
圖8A為根據一實施例之具有經曝露表面之經囊封背面朝向晶粒及複數個導電柱的橫截面側視圖說明。
圖8B為根據一實施例之經選擇性圖案化模製化合物的橫截面側視圖說明。
圖9A為根據一實施例之經選擇性圖案化模製化合物的橫截面側視圖說明。
圖9B為根據一實施例之具有經曝露表面之經囊封向上朝向晶粒及複數個導電柱的橫截面側視圖說明。
圖10為根據一實施例之包括頂部RDL及底部RDL之封裝的橫截面側視圖說明。
圖11為根據一實施例之包括具有經曝露頂部表面之背面朝向底部晶粒及頂部晶粒之封裝的橫截面側視圖說明。
圖12為根據一實施例之包括具有經曝露頂部表面之向上朝向底部晶粒及頂部晶粒之封裝的橫截面側視圖說明。
圖13為根據一實施例之包括具有經曝露頂部表面之複數個頂部晶粒之封裝的橫截面側視圖說明。
圖14至圖16為根據一實施例之使用多個載體基板來形成封裝之方法的橫截面側視圖說明。
實施例描述扇出系統級封裝(SiP)結構及製造方法，特別是利用扇出晶圓級封裝(fan out wafer level packaging；FOWLP)技術之方法。在各種實施例中，參考諸圖進行描述。然而，可在沒有此等特定細節中之一或多者的情況下或與其他已知方法及組態組合地實踐某些實施例。在以下描述中，闡述諸如特定組態、尺寸及製程等等之眾多特定細節，以便提供對實施例之透徹理解。在其他情況下，尚未以特定細節描述熟知之半導體製程及製造技術以免不必要地混淆實施例。貫穿本說明書而對「一個實施例」之參考意謂結合該實施例所描述之特定特徵、結構、組態或特性包括於至少一個實施例中。因此，貫穿本說 明書之各種地方的片語「在一個實施例中」之出現未必係指同一實施例。此外，可在一或多個實施例中以任何合適方式組合特定特徵、結構、組態或特性。
如本文中所使用之術語「上方」、「之上」、「至」、「之間」及「上」可指一個層相對於其他層之相對位置。在另一層「上方」、「之上」或「上」或接合「至」另一層或與另一層「接觸」之一個層可與另一層直接地接觸，或可具有一或多個介入層。在若干層「之間」的一個層可與該等層直接地接觸，或可具有一或多個介入層。
在一項態樣中，實施例描述充分利用重佈層(RDL)以用於多個晶粒之電端子之扇出的SiP結構。此組態可允許運用對應RDL來扇出每一個別晶粒。此外，此組態可允許諸如邏輯/記憶體(例如，特殊應用積體電路(ASIC)/動態隨機存取記憶體(DRAM))之不相似晶粒整合，而無通常用於PoP及SiP整合中之額外矽或有機中介層。
具體言之，在一實施例中，堆疊式晶粒配置包括接合至頂部重佈層(RDL)之前側以用於扇出之頂部晶粒，及接合至頂部RDL之背側之底部晶粒。頂部RDL定位於下部RDL之上且運用複數個導電柱而電耦接至下部RDL。因此，實施例描述具有雙側RDL配置之SiP結構，在該雙側RDL配置中，晶粒附接至頂部RDL之前側及背側兩者。在一實施例中，頂部RDL之重佈線沿著頂部晶粒之底部表面直接地形成於第一接觸墊上。此組態可允許藉由消除使頂部晶粒成焊料凸塊(例如，如同習知覆晶附接製程)來縮減總封裝z高度。在一項態樣中，實施例描述用於製造利用單一載體基板之具有多個RDL之SiP結構的製程流程。在此製程流程中，相對於多個載體基板，使用單一載體基板會允許將頂部RDL直接地形成於頂部晶粒上，因此有助於總z高度縮減。
在其他態樣中，實施例描述切斷晶粒與通常在PoP解決方案中發現之垂直導體之厚度相關性的雙側RDL配置，其中此厚度相關性描述 底部晶粒與在底部晶粒上方之佈線層之間的支座高度。根據實施例，藉由將底部晶粒附接至頂部RDL之背側來消除此支座高度，且因此可縮減總封裝z高度。此外，在一些實施例中，底部晶粒厚度可在附接至頂部RDL之後薄化，從而進一步有助於總封裝z高度縮減。同樣地，根據實施例，頂部晶粒厚度亦可薄化，從而進一步有助於總封裝z高度縮減。
在以下描述及圖中，說明及描述各種製程流程以用於製造SiP結構。雖然在圖中說明單SiP結構，但應瞭解，此等結構根據FOWLP技術可為橫越載體基板或經重建晶圓/面板之重複結構。
現在參看圖1，提供安裝於載體基板102(諸如矽晶圓、玻璃面板、金屬面板等等)上之複數個晶粒110及(視情況)組件116的橫截面側視圖說明。載體基板102可另外包括用於安裝複數個晶粒及組件之黏接層。在一實施例中，每一晶粒110或組件116包括具有一或多個經曝露接觸墊112之底部表面113，且視情況包括鈍化層114。在一實施例中，晶粒110可為邏輯、記憶體或其他晶粒。在一實施例中，晶粒110為記憶體(例如，DRAM)晶粒。組件116可為諸如電容器或電感器、MEMS裝置、感測器等等之被動裝置。
如圖2所展示，接著在載體基板102上將複數個晶粒110及選用組件116囊封於第一模製化合物120中。舉例而言，第一模製化合物120可包括熱固性交聯樹脂(例如，環氧樹脂)，但可使用如電子封裝中所知之其他材料。可使用諸如但不限於轉注模製、壓縮模製及層壓之合適技術來實現囊封。如本文中所使用，「經囊封」並不要求將所有表面包裹於模製化合物內。在圖2所說明之實施例中，晶粒110及組件116之橫向側包裹於模製化合物120中，且模製化合物亦形成於最高晶粒110之頂部表面111之上，但並不要求模製化合物覆蓋最高晶粒110或組件116之頂部表面111。在一實施例中，模製化合物120橫越載體 基板102係連續的，從而覆蓋對應於隨後將被單粒化之單獨SiP的複數個分組之晶粒110、組件116。
可接著如圖3所說明而移除包括任何選用黏接層之載體基板102以曝露晶粒110及選用組件116之底部表面113，從而引起形成經重建晶圓或面板125。在給出製造方法的情況下，在一實施例中，第一模製化合物120之底部表面122可與晶粒110及組件116之底部表面113共面，且因此與對應於晶粒110之底部表面113的接觸墊112及鈍化層114之經曝露表面共面。
現在參看圖4，第一重佈層(RDL)130形成於圖3之經重建晶圓/面板125上，其中第一RDL 130之前表面131形成於第一模製化合物120以及一或多個晶粒110及組件116上。第一RDL 130可包括單一重佈線132或多個重佈線132及介電層138。第一RDL 130可藉由逐層製程而形成，且可使用薄膜技術而形成。在一實施例中，第一RDL 130具有小於50μm之總厚度，或更尤其小於30μm，諸如大約20μm。在一實施例中，第一RDL 130包括嵌入式重佈線132(嵌入式跡線)。舉例而言，藉由首先形成晶種層，隨後形成金屬(例如，銅)圖案，可產生重佈線132。替代地，可藉由沈積(例如，濺鍍)及蝕刻來形成重佈線。重佈線132之材料可包括但不限於金屬材料，諸如銅、鈦、鎳、金，及其組合或合金。接著將重佈線132之金屬圖案嵌入於介電層138中，介電層138視情況被圖案化。介電層138可為諸如氧化物或聚合物(例如，聚醯亞胺)之任何合適材料。
在所說明實施例中，重佈線132沿著晶粒110及組件116之底部表面113直接地形成於接觸墊112上。更具體言之，重佈線132之接觸墊134直接地形成於接觸墊112上。在一實施例中，第一RDL 130之背側133包括接觸墊或凸塊下金屬層(under bump metallurgy；UBM)墊。舉例而言，UBM墊136B經形成以用於與額外晶粒接合，且UBM墊136A 經形成為晶種層以用於導電柱140之生長，如圖5所說明。導電柱140之材料可包括但不限於金屬材料，諸如銅、鈦、鎳、金，及其組合或合金。導電柱140可使用合適處理技術而形成，且可由多種合適材料(例如，銅)及層形成。在一實施例中，藉由鍍覆技術(諸如使用經圖案化光阻層以界定柱結構尺寸之電鍍)，隨後移除經圖案化光阻層，而形成導電柱140。
現在參看圖6A至圖6B，使用經重建晶圓/面板125作為載體而將一或多個底部晶粒150附接至第一RDL 130之背側133。在一特定實施例中，晶粒150為邏輯晶粒，諸如ASIC晶粒。在所說明實施例中，在複數個導電柱140之周邊內將晶粒150附接至第一RDL 130。根據實施例，底部晶粒150可背面朝向(圖6A)第一RDL 130及經重建晶圓/面板125，或向上朝向(圖6B)第一RDL 130及經重建晶圓/面板125。
在圖6A所說明之實施例中，晶粒150之頂部表面151係運用晶粒附接膜160而附接至第一RDL 130之背側133。在此組態中，晶粒背面朝向經重建晶圓/面板125。舉例而言，可在單粒化及附接至第一RDL 130之前將晶粒附接膜160施加至晶粒150之陣列。舉例而言，可藉由層壓、印刷或施配來施加晶粒附接膜160。在一實施例中，晶粒附接膜160係由黏接材料形成。晶粒附接膜160可另外為用於熱耗散之導熱黏接劑。可視情況在晶粒附接之後經由(例如)化學、熱或紫外光來固化晶粒附接膜160。在圖6A所說明之實施例中，晶粒150可不直接地電耦接至第一RDL 130。如所說明，包括鈍化層154及導電接點152的晶粒之底部表面153背對第一RDL 130。在所說明實施例中，導電接點152被形成為柱，但無需如此。
在圖6B所說明之實施例中，晶粒150之頂部表面151係運用導電凸塊162(諸如焊料凸塊)而附接至第一RDL 130之背側133。在此組態中，晶粒向上朝向經重建晶圓/面板125。晶粒150之頂部表面151包括 導電接點152及鈍化層154，且晶粒150直接地電耦接至第一RDL 130，例如，電耦接至著陸墊或UBM墊136B。在此實施例中，晶粒之底部表面153不包括任何導電接點152。
現在參看圖7A至圖7B，根據實施例，底部晶粒150及導電柱140囊封於第二模製化合物170中。第二模製化合物170可為與第一模製化合物120相同的材料。圖7A為在一實施例中在運用第二模製化合物170之囊封之後的來自圖6A之結構的說明。圖7B為在一實施例中在運用第二模製化合物170之囊封之後的來自圖6B之結構的說明。在圖7A至圖7B所說明之實施例中，模製化合物170之背側171覆蓋底部晶粒150之底部表面153，以及導電柱140之底部表面141。然而，無需此組態。實際上，可在囊封之後曝露晶粒150之底部表面及/或導電柱140之底部表面。
參看圖8A，說明一實施例，其中底部晶粒150為背面朝向的，且導電柱之底部表面141及底部晶粒150之導電接點152之底部表面155被曝露。此可為囊封製程之結果。此可替代地為(例如)藉由化學機械拋光(CMP)進行之蝕刻或背面研磨的結果。如上文關於圖6A所描述，導電接點152可被形成為柱。可在蝕刻或背面研磨期間縮減柱狀導電接點152之厚度。在一實施例中，第二模製化合物170之背表面171係與導電柱140之背表面及導電接點152之表面155共面。
實施例並不限於晶粒150之導電接點152之經曝露表面155係與第二模製化合物170之背側171共面的結構。圖8B為模製及圖案化程序之橫截面側視圖說明。在所說明實施例中，初始囊封操作可引起模製化合物170遍及晶粒150且潛在地遍及導電柱140而散播。在囊封之後，如圖8B所說明而圖案化模製化合物170以形成開口172以曝露晶粒150之導電接點152之表面155及/或導電柱140之底部表面141。因此，並非全域地研磨或回蝕，而是可使用選擇性圖案化技術(諸如雷 射鑽孔或化學蝕刻)以曝露導電接點152及導電柱140。
現在參看圖9A，說明一實施例，其中晶粒150向上朝向經重建晶圓/面板。在此實施例中，使用合適圖案化技術來選擇性地圖案化模製化合物170以曝露導電柱140之底部表面141。參看圖9B，說明一實施例，其中執行蝕刻或背面研磨操作(例如，CMP)以曝露導電柱140之底部表面141。第二模製化合物170之背側171可與導電柱140之背表面共面，且視情況與晶粒150之底部表面153共面。蝕刻或背面研磨操作可另外縮減第二模製化合物170、導電柱140及(視情況)晶粒150之厚度。在此態樣中，此厚度縮減可轉譯成已完成的SiP結構之總z高度縮減。
雖然已分離地描述圖6A至圖6B、圖7A至圖7B、圖8A至圖8B及圖9A至圖9B，但製程未必彼此排斥且可在一些實施例中進行組合，或可具有變化。採取圖6A作為一實例，可將其分割成單獨單元且置放於載體基板上。
現在參看圖10，在具有背面朝向底部晶粒150之實施例中，第二RDL 180形成於第二模製化合物170之背側171、晶粒150之導電接點152之經曝露表面155及導電柱140之經曝露底部表面141之上。第二RDL 180可與第一RDL 130相似地被形成，且可包括單一或多個重佈線182、前側181及背側183。第二RDL 180可藉由逐層製程而形成，且可使用薄膜技術而形成。舉例而言，第一RDL 130及第二RDL 180可各自具有小於50μm之厚度，或更尤其小於30μm，諸如大約20μm。
在一實施例中，重佈線182，且更尤其為重佈線182之接觸墊184，直接地形成於導電接點152之經曝露表面155及導電柱140之經曝露底部表面141上。因此，晶粒150係依靠形成第二RDL之重佈線182及介電層188而接合至第二RDL 180。在晶粒150向上朝向經重建晶圓/面板之實施例中，重佈線182不直接地形成於晶粒150之導電接點152 上，且晶粒150不直接地電耦接至第二RDL 180，如下文關於圖12進一步詳細地所描述。
根據實施例，雙側RDL配置可允許縮減總封裝厚度。舉例而言，沒有必要包括支座高度，其中導電柱140(垂直導體)將實質上高於底部晶粒150。舉例而言，沒有必要包括設計容差以適應運用典型PoP解決方案中之焊球進行的頂部封裝至底部封裝之接合，在典型PoP解決方案中，習知焊球高度為大約100μm至200μm。此外，使用頂部及底部RDL會允許相較於普通中介層具有實質上較低厚度之電端子之扇出的精細線及間隔界定。
在形成第二RDL 180之後，可將導電凸塊190附接至第二RDL 180之著陸墊186(其亦可為UBM)或生長於著陸墊186上，且單粒化個別封裝100。多種結構可用於導電凸塊190。舉例而言，導電凸塊190可為如所說明之經附接焊球，或經鍍覆柱。
直至此時，已將頂部晶粒110之頂部表面111說明為由第一模製化合物120之頂部表面121覆蓋。在圖11至圖13所說明之實施例中，至少一個晶粒110或組件116之頂部表面111被曝露，且未由第一模製化合物120覆蓋。舉例而言，此可歸因於初始囊封製程，或替代地經由蝕刻或背面研磨操作而實現，蝕刻或背面研磨操作可在初始囊封製程之後或在形成第二RDL 180之後執行。
圖11為相似於關於圖10所描述及說明之實施例的具有背面朝向底部晶粒150之實施例的橫截面側視圖說明，其中至少一個晶粒110或組件116之頂部表面111被曝露，且未由第一模製化合物120覆蓋。
圖12為在形成第二RDL 180及導電凸塊190之後相似於關於圖7B所描述及說明之實施例的具有向上朝向底部晶粒150之實施例的橫截面側視圖說明，其中至少一個晶粒110或組件116之頂部表面111被曝露，且未由第一模製化合物120覆蓋。雖然未分離地說明，但第二 RDL 180可形成於多種向上朝向底部晶粒150組態之上，該等組態包括但不限於圖9A至圖9B所描述及說明之組態。
圖13為包括多個頂部晶粒110(或替代地，組件116)之實施例的橫截面側視圖說明，多個頂部晶粒110具有未由第一模製化合物120之頂側121覆蓋的經曝露頂部表面111。雖然圖13所說明之特定實施例展示背面朝向晶粒150，但此實施例同樣地與向上朝向底部晶粒150相容。
應瞭解，雖然已關於圖10至圖13而描述及說明特定封裝組態，但實施例並不受到如此限制且許多組態可彼此組合且與本文中所描述之其他結構組合，特別是在此等組合可有助於縮減總封裝z高度的情況下。
現在參看圖14至圖16，根據利用額外載體基板之實施例來說明一製程流程。在上文所描述之實施例中，已將所有晶粒及組件描述及說明為附接至頂部RDL 130。現在參看圖14，在一實施例中，暫時將相似於圖6B所說明之結構的結構置放於先前已置放有晶粒250之載體基板202上。晶粒250可相似於先前所描述之晶粒150，其包括具有經曝露接觸墊212及鈍化層214之底部表面213。亦可運用相似於先前所描述之組件116的組件來替換晶粒250。
在轉注至載體基板202之後，運用第二模製化合物270來囊封底部晶粒150、250及導電柱140。現在參看圖16，移除載體基板202，且可接著如先前所描述而形成第二RDL 180，其中重佈線182，且更尤其為重佈線182之接觸墊184，直接地形成於晶粒250之接觸墊212上。在形成第二RDL 180之後，可如先前所描述而附接導電凸塊190且單粒化個別SiP結構100。
在利用實施例之各種態樣時，對於熟習此項技術者而言將變得顯而易見，用於形成包括多個重佈層之系統級封裝扇形結構的以上實施例之組合或變化係可能的。儘管已用特定於結構特徵及/或方法動作 之語言來描述實施例，但應理解，所附申請專利範圍未必限於所描述之特定特徵或動作。所揭示之特定特徵及動作代替地應被理解為有用於說明的申請專利範圍之實施例。

Claims (17)

  1. 一種封裝，其包含：一第一晶粒，其包含一底部表面，該底部表面包含一第一接觸墊及一鈍化層；一第一重佈層(RDL)；其中該第一晶粒係附接至該第一RDL之一前側使得該第一RDL之該前側直接地形成於該第一接觸墊及該鈍化層上；一第一模製化合物，其在該第一RDL之該前側上囊封該第一晶粒；一第二晶粒之一頂部表面，其使用一晶粒附接膜附接至該第一RDL之一背側以使得該第二晶粒面對該第二晶粒的背面；一第二RDL；複數個導電柱，其自該第一RDL之該背側延伸至該第二RDL之一前側；一第二模製化合物，其在該第一RDL之該背側與該第二RDL之該前側之間囊封該第二晶粒及該複數個導電柱。
  2. 如請求項1之封裝，其進一步包含：在該第二RDL之一背側上的複數個導電凸塊。
  3. 如請求項1之封裝，其中該第一模製化合物不完全地覆蓋該第一晶粒之一頂部表面。
  4. 如請求項3之封裝，其中該第二模製化合物不完全地覆蓋鄰近於該第二RDL的該第二晶粒之一底部表面。
  5. 如請求項1之封裝，其中該第二RDL包含直接地形成於該複數個導電柱中之一者上的一第二重佈線。
  6. 如請求項5之封裝，其中該晶粒附接膜係一固化膜。
  7. 如請求項5之封裝，其中該第二RDL包含直接地形成於該第二晶粒之一導電接點上的一第三重佈線。
  8. 如請求項5之封裝，其中該第二晶粒之一導電接點的一底部表面與該複數個導電柱之底部表面共面。
  9. 一種形成一扇出系統級封裝之方法：將一第一晶粒置放於一載體基板上；在該載體基板上運用一第一模製化合物來囊封該第一晶粒；移除該載體基板；將一第一重佈層(RDL)形成於該第一模製化合物及該第一晶粒上，其中該第一RDL之一重佈線沿著該第一晶粒之一底部表面直接地形成於一接觸墊上；將複數個導電柱形成於該第一RDL之一背側上；在該複數個導電柱之一周界內部將一第二晶粒附接至該第一RDL之該背側；運用一第二模製化合物來囊封該第二晶粒及該複數個導電柱；及將一第二RDL形成於該第二模製化合物及該複數個導電柱上。
  10. 如請求項9之方法，其中形成該第二RDL包含：將複數個重佈線直接地形成於該複數個導電柱上。
  11. 如請求項9之方法，其中形成該第二RDL包含：將一重佈線直接地形成於該第二晶粒之一接觸墊上。
  12. 如請求項9之方法，其進一步包含：運用一黏接層將該第二晶粒附接至該第一RDL。
  13. 如請求項9之方法，其進一步包含：縮減該第一模製化合物之一厚度以曝露該第一晶粒。
  14. 如請求項9之方法，其進一步包含：在將該第二晶粒及該複數個導電柱囊封於該第二模製化合物中之後及在形成該第二RDL之前縮減該第二模製化合物及該複數個導電柱之一厚度。
  15. 如請求項9之方法，其進一步包含：在形成該第二RDL之前在該第二模製化合物中形成開口以曝露該第二晶粒之著陸墊。
  16. 如請求項9之方法，其進一步包含：將一第三晶粒或組件置放於一第二載體基板上；及在該載體基板上運用該第二模製化合物來囊封該第三晶粒或組件。
  17. 如請求項16之方法，其進一步包含：在運用該第二模製化合物來囊封該第二晶粒、該複數個導電柱及該第三晶粒或組件之後移除該第二載體基板；及將該第二RDL形成於該第三晶粒或組件、該第二模製化合物及該複數個導電柱上。
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CN107408541A (zh) 2017-11-28
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