TWI620827B - 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜 - Google Patents

透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜 Download PDF

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Publication number
TWI620827B
TWI620827B TW104119074A TW104119074A TWI620827B TW I620827 B TWI620827 B TW I620827B TW 104119074 A TW104119074 A TW 104119074A TW 104119074 A TW104119074 A TW 104119074A TW I620827 B TWI620827 B TW I620827B
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TW
Taiwan
Prior art keywords
component
film
transparent conductive
target
conductive film
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TW104119074A
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English (en)
Chinese (zh)
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TW201538764A (zh
Inventor
湯川富之
武井應樹
小林大士
赤松泰彥
清田淳也
增澤健二
石橋曉
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愛發科股份有限公司
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Publication of TW201538764A publication Critical patent/TW201538764A/zh
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Publication of TWI620827B publication Critical patent/TWI620827B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Non-Insulated Conductors (AREA)
TW104119074A 2009-11-19 2010-11-18 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜 TWI620827B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2009-263966 2009-11-19
JP2009263966 2009-11-19

Publications (2)

Publication Number Publication Date
TW201538764A TW201538764A (zh) 2015-10-16
TWI620827B true TWI620827B (zh) 2018-04-11

Family

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Family Applications (2)

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TW104119074A TWI620827B (zh) 2009-11-19 2010-11-18 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜
TW099139744A TWI500786B (zh) 2009-11-19 2010-11-18 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜

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TW099139744A TWI500786B (zh) 2009-11-19 2010-11-18 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜

Country Status (5)

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JP (2) JP5726752B2 (fr)
KR (4) KR20170005149A (fr)
CN (2) CN104213085A (fr)
TW (2) TWI620827B (fr)
WO (1) WO2011061922A1 (fr)

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CN102945694B (zh) * 2012-11-08 2015-05-20 深圳南玻显示器件科技有限公司 Ito基板及其制备方法
KR102061790B1 (ko) 2013-02-05 2020-02-12 삼성디스플레이 주식회사 유기 발광 표시 장치의 투명전극 제조방법 및 그 투명전극을 구비한 유기 발광 표시 장치
JP5805799B2 (ja) * 2013-05-15 2015-11-10 日本写真印刷株式会社 タッチセンサおよびタッチセンサモジュール
US9988707B2 (en) * 2014-05-30 2018-06-05 Ppg Industries Ohio, Inc. Transparent conducting indium doped tin oxide
CN104746003B (zh) * 2014-12-24 2017-09-26 信利（惠州）智能显示有限公司 氧化铟锡低温镀膜方法
JP6553950B2 (ja) * 2015-05-27 2019-07-31 日東電工株式会社 透明導電性フィルムおよびその製造方法
TWI664646B (zh) * 2016-09-12 2019-07-01 日商愛發科股份有限公司 附透明導電膜之基板之製造方法、附透明導電膜之基板之製造裝置、及附透明導電膜之基板
CN106893132B (zh) * 2017-03-30 2019-11-15 维沃移动通信有限公司 一种有机曲面壳体加工方法和有机曲面壳体
WO2018211793A1 (fr) * 2017-05-15 2018-11-22 三井金属鉱業株式会社 Cible de pulvérisation cathodique pour film conducteur transparent
WO2019031105A1 (fr) * 2017-08-08 2019-02-14 三井金属鉱業株式会社 Compact fritté d'oxyde et cible de pulvérisation cathodique
CN108149210B (zh) * 2017-12-26 2019-12-31 哈尔滨工业大学 一种长波红外增透保护膜的制备方法
JP7112854B2 (ja) * 2018-02-19 2022-08-04 住友化学株式会社 酸化錫粉末
KR20230015894A (ko) * 2020-05-25 2023-01-31 닛토덴코 가부시키가이샤 광투과성 도전성 시트의 제조 방법
CN117229051B (zh) * 2023-09-21 2024-05-10 株洲火炬安泰新材料有限公司 一种LaTb共掺杂ITO靶材及其制备方法与应用

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TWI278507B (en) * 2003-05-28 2007-04-11 Hitachi Chemical Co Ltd Polishing agent and polishing method

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Also Published As

Publication number Publication date
JP2015158014A (ja) 2015-09-03
JP6060202B2 (ja) 2017-01-11
KR20180063386A (ko) 2018-06-11
WO2011061922A1 (fr) 2011-05-26
CN102666909B (zh) 2016-06-22
CN104213085A (zh) 2014-12-17
JP5726752B2 (ja) 2015-06-03
CN102666909A (zh) 2012-09-12
TW201538764A (zh) 2015-10-16
KR20170005149A (ko) 2017-01-11
TWI500786B (zh) 2015-09-21
TW201124546A (en) 2011-07-16
KR20140071502A (ko) 2014-06-11
JPWO2011061922A1 (ja) 2013-04-04
KR20120070597A (ko) 2012-06-29

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