TWI619177B - ２ｄ及３ｄ ic封裝之整合中介層方法 - Google Patents

２ｄ及３ｄ ic封裝之整合中介層方法 Download PDF

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Publication number
TWI619177B
TWI619177B TW104118077A TW104118077A TWI619177B TW I619177 B TWI619177 B TW I619177B TW 104118077 A TW104118077 A TW 104118077A TW 104118077 A TW104118077 A TW 104118077A TW I619177 B TWI619177 B TW I619177B
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substrate
die
package
conductive
groove
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TW104118077A
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TW201608646A (zh
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宏 沈
查爾斯Ｇ 渥奇克
阿爾卡爾古德Ｒ 斯塔拉姆
朱利安 高
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英凡薩斯公司
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Abstract

本發明揭露一種積體電路(IC)封裝及其製造方法，此封裝包含：具有一背側表面以及一頂面的一第一基板，該頂面上具有一凹槽，其具有定義一前側表面之一底部；複數個第一導電接觸件係設置於前側表面上，複數個第二導電接觸件設於背側表面上；複數個第一導電元件，係穿過該第一基板，將所選的第一導電接觸件以及第二導電接觸件互相耦接。第一晶粒包含一IC，此IC電性耦接相對應的複數個第一導電接觸件；第二基板，具有一底面以及一介電材料，此底面封接至第一基板之頂面上，介電材料設於凹槽內以包覆第一晶粒。

Description

2D及3D IC封裝之整合中介層方法
本發明有關於製作積體電路(IC)封裝及其晶圓級方法，特別是，使用整合的中介層(ITP)以製作二維(2D)以及三維(3D)IC封裝。
近年來，為了實現多項性能目標，例如更高速的訊號傳輸、降低的功率消耗、降低的製作成本以及降低的外形尺寸等等，而將半導體晶片的尺寸大幅度縮小。隨著半導體產業的發展，追求在更小的空間內提供更多的功能，有些人認為，如果在製程以及組裝上沒有新的突破性技術，則習知的“Moore定律”，其描述在計算硬體的歷史上高密度積體電路內的電晶體數量每兩年約增加為原本的兩倍的趨勢，可能將終止。垂直整合，亦即三維積體電路(“3D IC”或“3D”)封裝，已成為可能實現上述目標的技術之一。
然而，3D IC封裝對於IC設計者以及製造者出現一定的挑戰。例如，3D IC組裝的目前趨勢係將微凸的晶粒組裝至薄化的中介層 (ITP)上。然而，薄化的ITP的製作以及組裝可能產生不少問題。其中之一，為了將ITP薄化成期望的厚度，在薄化以及後續製程期間，ITP晶圓通常利用暫時膠黏劑黏著於“載體(carrier)”上，此暫時膠黏劑通常為低熔融溫度聚合物。膠黏劑的低熔融溫度係限制了可使用於“背面”製程的整體最大溫度。在拆卸製程以及與晶圓相關的製程期間，亦增加晶圓損壞的可能性。另一問題是，在組裝期間，可能會造成晶圓彎曲，如此不僅難以將微凸塊以及彎曲的ITP晶粒相連接，在焊料凸塊以及正常功能晶粒上的應力亦影響晶圓長期的可靠度。
因此，目前急需要新的2D與3D IC的封裝以及製造技術，以解決上述的問題。
根據本發明之實施例，本案係提供使用整合的ITP的新2D以及3D IC封裝以及其製作方法。
在一實施例中，2D IC封裝包含具有一背側表面以及一頂面的一第一基板，此頂面上具有一凹槽。此凹槽具有用於定義一前側表面的一底部。第一導電接觸件係設於前側表面上，第二導電接觸件係設於背側表面上。第一導電元件係穿過第一基板，而所選的第一導電接觸件以及第二導電接觸件係互相耦接。第一晶粒包含一IC，此IC電性耦接對應的第一導電接觸件。第二基板具有一底面以及一介電材料，此底面封接至第一基板之頂面上，此介電材料設於凹槽內，以包覆第一晶粒。介電材料可包含一無機材料。
在另一實施例中，前述的2D IC封裝可作為製作3D IC封裝的基礎，3D IC封裝包含複數個第三導電接觸件、複數個第四導電接觸件以及複數個第二導電元件，複數個第三導電接觸件設於第一晶粒之一頂面上，複數個第四導電接觸件設於第二基板之一頂面上，複數個第二導電元件穿過第二基板，而所選的第三導電接觸件以及第四導電接觸件係透過第二導電元件互相耦接。第二晶粒包含一IC以及一覆蓋件，此IC電性耦接對應的第四導電接觸件，此覆蓋件具有封接至第二基板之頂面上的一底面，此覆蓋件用以包覆第二晶粒。
本發明之上述及其他特徵及優勢將藉由參照附圖詳細說明其例示性實施例而變得更顯而易知。
10‧‧‧基板
12‧‧‧凹槽
14‧‧‧頂面
16‧‧‧前側表面
18‧‧‧導電接觸件
20‧‧‧晶粒
22‧‧‧頂面
24‧‧‧接合材料
26‧‧‧接合材料層
28‧‧‧基板
30‧‧‧背側表面
32‧‧‧導電元件
34‧‧‧重分配層
36‧‧‧焊料凸塊
38‧‧‧IC封裝
40‧‧‧頂面
42‧‧‧RDL
44‧‧‧IC封裝
46‧‧‧導電元件
48‧‧‧晶粒
50‧‧‧接合材料層
52‧‧‧基板
54‧‧‧凹槽
56‧‧‧3D IC封裝
58‧‧‧通道
60‧‧‧頂面
62‧‧‧2D IC封裝
64‧‧‧凹槽
66‧‧‧通道
100‧‧‧基板
102‧‧‧上表面
104‧‧‧背側表面
106‧‧‧導電接觸件
108‧‧‧基板
110‧‧‧開孔
112‧‧‧接合材料層
116‧‧‧凹槽
118‧‧‧晶粒
124‧‧‧接合材料
126‧‧‧接合材料層
128‧‧‧基板
130‧‧‧導電元件
132‧‧‧重分配層(RDL)
134‧‧‧封裝
第1圖至第30圖係為至少一晶圓之一部分之局部剖面圖，其係根據本發明之多個實施例之製作2D以及3D IC封裝之晶圓級方法之依序步驟，其中：第1圖為定義第一基板的晶圓之一部份之剖面圖；第2圖為第1圖之基板之剖面圖，其凹槽設於基板之頂面上；第3圖為第2圖之基板之剖面圖，其導電接觸件設於凹槽之底部上；第4圖為第3圖之基板之剖面圖，其第一晶粒包含IC，此IC電性耦接對應的導電接觸件；第5圖為第4圖之基板以及晶粒之剖面圖，其為施加薄化製程後的基板之頂面以及晶粒，此薄化製程係用以降低IC封裝的厚度； 第6圖為第5圖之基板以及晶粒之剖面圖，其為施加平坦化製程後的基板之頂面、晶粒以及設於凹槽內的介電材料相互共平面，此平坦化製程係用以降低IC封裝的厚度；第7圖為第6圖之基板、晶粒以及介電材料之剖面圖，其中接合材料層沈積於基板之平坦化頂面上；第8圖第7圖之基板、晶粒以及接合材料之剖面圖，其中具有一底面之第二基板，此底面封接至第一基板之至少一頂面上；第9圖為第8圖之基板以及晶粒之剖面圖，其具有施加薄化製程後的第一基板之背側表面，此薄化製程係用以降低IC封裝的厚度；第10圖為第9圖之基板以及晶粒之剖面圖，其中具有穿過第一基板及具有上端的導電元件，這些上端選擇性耦接在凹槽之底部上的複數個導電接觸件；第11圖為第10圖之基板以及晶粒之剖面圖，其中具有導電重分配層(RDL)設於第一基板之背側表面上以及導電焊料凸塊藉由RDL分別耦接至所選的導電元件之下端；第12圖為第11圖之基板以及晶粒之剖面圖，其中具有施加薄化製程後的第二基板之頂面，此薄化製程係用以降低IC封裝的厚度；第13圖為相似於第11圖之剖面圖，但第13圖之第一晶粒電性耦接設於凹槽之底部上的對應的導電接觸件；第14圖為相似於第3圖之剖面圖，但第14圖之導電重分配層(RDL)設於凹槽之底部上，並使設於其上的所選的導電接觸件互相耦接；第15圖相似於第12圖之剖面圖，但第15圖將第14圖之導電重分配層 (RDL)設於凹槽之底部上；第16圖為相似於第12圖之剖面圖，但第16圖未繪出焊料凸塊；第17圖為第16圖之基板之剖面圖，其第二導電元件穿過第二基板及具有下端，此下端係耦接設於第一晶粒之頂面上所選的導電接觸件；第18圖為第17圖之基板以及晶粒之剖面圖，其中第二IC晶粒電性耦接對應的第二導電元件之上端；第19A圖為第18圖之基板以及晶粒之剖面圖，其中第三基板具有一底面，此底面上具有一凹槽，其中底面封接至第二基板之頂面上，以使第二晶粒設於此凹槽內，介電材料設於此凹槽內且包覆此第二晶粒；第19B圖相似於第13圖之剖面圖，但第19B圖之第二基板具有一底面，此底面上具有凹槽，其中底面封接至第一基板之頂面上，以使兩基板之凹槽結合成一較大凹槽，第一晶粒設於此較大凹槽內，介電材料設於此較大凹槽內且包覆第一晶粒；第20圖為本發明之定義第一基板之一替代實施例的晶圓之一部份之剖面圖，其中導電接觸件設於第一基板之前側表面上；第21圖為定義第二基板之一替代實施例的晶圓之一部份之剖面圖，此第二基板具有延伸穿過第二基板的開孔；第22圖為第20圖以及第21圖之第一基板以及第二基板之剖面圖，其中第二基板之底面接合至第一基板之頂面上，以定義凹槽；第23圖為第22圖之基板之剖面圖，其中第一晶粒包含IC，此IC設於凹槽內且電性耦接在第一基板之前側表面上的對應的導電接觸件；第24圖係為第23圖之基板以及晶粒之剖面圖，其係繪示施加薄化製程 後的第二基板之頂面以及晶粒，此薄化製程係用以降低IC封裝的厚度；第25圖為第24圖之基板以及晶粒之剖面圖，其中施加平坦化製程後的基板之頂面、晶粒以及設於凹槽內的介電材料相互共平面，此平坦化製程係用以降低IC封裝的厚度；第26圖為第25圖之基板、晶粒以及介電材料之剖面圖，其中接合材料層沈積於基板之平坦化頂面上；第27圖為第26圖之基板以及晶粒之剖面圖，其中第三基板具有一底面，此底面封接至第二基板之至少一頂面上；第28圖為第27圖之基板以及晶粒之剖面圖，其中包含施加薄化製程後的第一基板之背側表面，此薄化製程用以降低IC封裝的厚度；第29圖為第28圖之基板以及晶粒之剖面圖，其中導電元件穿過第一基板以及具有複數個上端，這些上端選擇性耦接在凹槽之底部上的複數個導電接觸件；以及第30圖為第29圖之基板以及晶粒之剖面圖，其中導電重分配層(RDL)設於第一基板之背側表面上，複數個導電焊料凸塊分別選擇性地耦接複數個導電元件之複數個下端。
於此使用，詞彙“與/或”包含一或多個相關條列項目之任何或所有組合。當“至少其一”之敘述前綴於一元件清單前時，係修飾整個清單元件而非修飾清單中之個別元件。
近年來，由於規模經濟，積體電路(IC)封裝之“晶圓級 (Wafer level)“封裝生產激增，導致封裝之尺寸以及成本降低。有些專利已揭露IC封裝以及其製作方法，例如申請號14/214,365、申請日2014年3月14日、發明人H.Shen等人以及發明名稱“Integrated Circuits Protected by Substrates with Cavities,and Methods of Manufacture”的美國專利，其公開資料係透過引用其內容併入本文。
在多個可能的實施例中的其中之一，晶圓或對齊的至少二晶圓之夾層可切割或“單一化”成封裝，至少二晶圓之數量近似於封裝之數量，至少二晶圓可包含至少一配線基板晶圓之一部份，有時被稱為“中介層”(ITP)“晶圓，其具有一頂面，此頂面上設有至少一半導體晶粒、晶片或堆疊式晶粒(可以為封裝或未封裝)，各晶圓包含至少一積體電路(IC)。可包含一圖案化導電跡線，例如“重分配層”(RDL)，位於其上表面上、其下表面上及/或其上表面以及下表面的中間，其中不同的IC彼此電性連接及/或電性連接其它元件。ITP亦可裝設於及/或包含離散被動電子元件上，例如電阻、電容、電感或其相似物，這些設於其表面上或其層內，例如申請號14/268,899且申請日2014年5月2日、以及申請號14/304,535且申請日2014年6月13日以及發明人L.Wang等人的美國專利內所揭露的內容，透過引用其內容併入本文中。
使用矽穿孔(TSV)的矽ITP可成為3D IC技術發展的關鍵元件，其中晶粒為堆疊式並垂直地電性連接一單一功能裝置。典型的TSV製程可能涉及通孔的深層反應式離子蝕刻法、矽晶圓內的”穿孔”、通孔內的阻障層以及種子層的化學氣相沉積法(CVD)或物理氣相沉積法(PVD)以及填充通孔的導電材料的電化學沉積法(ECD)，導電材料例如銅(Cu)、 鎢(W)或多晶矽。
為了增加封裝元件之速度，必須製作非常短的訊號傳輸線。3D IC組件的目前趨勢為將微凸的晶粒組裝至於薄化的ITP上，ITP之厚度例如介於25微米(μm)至100微米(μm)(1μm=1x106公尺)的範圍內。然而，薄化的ITP之製程以及組件可能產生多個問題。其中之一，為了將ITP薄化成期望的厚度，在薄化以及隨後的製程中，ITP晶圓通常利用暫時膠黏劑黏著於一載體上，此膠黏劑通常為低熔融溫度聚合物。膠黏劑之低熔融溫度的缺點在於會限制可使用於背面製程的整體溫度。在拆卸以及隨後的晶圓製程中，亦增加晶圓損壞的可能性。另一問題是，在組裝期間，薄化的ITP可能彎曲，如此將難以連接在彎曲的ITP晶粒上的微凸塊，彎曲的ITP亦可能因焊料凸塊以及晶粒上的應力而影響長期的可靠度。
通過研究和開發，已可成功利用載體晶圓解決薄化晶圓的彎曲問題，不同於習知製程使用暫時載體，此載體晶圓(或其一相關部分)成為IC封裝之機械結構之一組成部分。因此，正常功能晶粒(functional die)附加至一完整厚度ITP晶圓上。使用晶圓對晶圓接合(wafer-to-wafer bonding)，載體晶圓或其一結合部分永久地附加至ITP上，以完整地包覆正常功能晶粒。在隨後的ITP晶圓的薄化製程期間，載體晶圓提供必要的支撐結構，但不必使用低熔融溫度膠黏劑將晶圓黏著於載體晶圓上。相較於習知的晶粒附加以及模壓製程的方式，由於載體晶圓係與ITP晶圓熱匹配，所以在後續的製程中載體以及ITP晶圓個別的熱膨脹係數(CTE)不匹配僅導致小應力或沒有應力產生。
如前所述，第1圖至第19A圖係為至少一晶圓之多個部分 之局部剖面圖，其係根據本創作之第一實施例之製作2D、2.5D及/或3D IC封裝之晶圓級方法之依序步驟，其中IC封裝係單一化晶圓夾層而形成。
第1圖係為定義第一基板10的完整厚度晶圓之一部份之剖面圖。雖然在第1圖以及隨後的圖式中，僅繪示晶圓之一部份，例如定義結合單端IC封裝之第一基板10的部分(亦即施加切割製程之部分)，但是應當理解的是，在晶圓夾層被切割成獨立的封裝之前，晶圓級製作方法的多個製程亦可同時或連續地施加至整體晶圓之其它部分以及相鄰部分。
晶圓可包含各種適合的材料，包含半導體材料，例如單晶矽，其可使用習知的微影製程技術製成，並具有可匹配於晶圓上的至少一矽IC晶粒的CTE。或者，可使用或結合其它材料，例如玻璃、金屬或其它適合的材料。
如第2圖所示，本發明之第一實施例之製作2D或3D IC封裝之方法之第一步驟，可包含在基板10之頂面14上形成凹槽12。凹槽12具有定義一前側表面16之一底部。在多個可能的實施例中的其中之一中，凹槽12可具有一深度，例如介於50μm至500μm之間，並可使用至少一種習知的蝕刻技術形成，例如反應式離子蝕刻法(RIE)。
第3圖係為第2圖之基板之剖面圖，其係繪示第一實施例之方法之下一步驟，導電接觸件18形成於基板10之前側表面16上。例如，此可透過下列程序實現，在前側表面16上，沈積以及圖案化一絕緣薄層，例如二氧化矽(SiO2)，接著沈積以及圖案化一金屬，例如使用Cu蒸鍍技術或無電鍍鎳(Ni)化金(Au)(ENIG)技術，以在絕緣物層上沈積以及圖案化銅(Cu)。
如第4圖所示，在導電接觸件18被定義於表面16上之後，第一晶粒20包含至少一IC，此IC設於凹槽12內，並電性耦接對應的接觸件18。例如，在一實施例中，設於晶粒20之底面上的導電接觸件(未繪示於圖中)可使用回焊技術耦接相對的接觸件18，其中在基板10以及晶粒20上的相對的接觸件之間的焊料凸塊最先被熔融，例如在烘箱中，利用熔融狀態的焊料將兩相對的接觸件電性連接，接著將焊料固化成導電連接件。
如第5圖所示，在晶粒20耦接基板10之後，可同時施加一薄化製程，例如蝕刻製程、化學及/或機械拋光製程等，至基板10之頂面14與22以及晶粒20上，以降低IC封裝的厚度。如第6圖所示，在基板10以及晶粒20薄化成期望的厚度之後，凹槽12可例如使用介電質接合材料24填充，例如環氧樹脂，以將晶粒20埋設於凹槽12內，亦即底部填充、剛化以及將晶粒20閉合耦接凹槽12之內表面。此外，凹槽之至少一部份可使用導熱材料或無機層填充，例如氧化物或氮化物；如申請號62/087,361以及申請日2014年12月4日的專利所揭露的發明所述，其內容係透過引用併入本發明。這些材料可提昇導熱性、CTE匹配或其組合。
如第6圖所示，接著，可例如使用化學機械拋光(CMP)技術，以平坦化基板10之個別的上表面、晶粒20以及接合材料24，以使基板10之頂面、晶粒20以及設於凹槽12內的接合材料24相互共平面。下一步驟，如第7圖所示，在平坦化頂面上，可沈積一接合材料層26。根據實際應用的需求，接合材料可例如包含氧化物(例如SiO2)、氮化物、金屬、苯環丁烯(BCB)、熱介面材料(TIM)、膠黏劑、玻璃或其相似物。
如第8圖所示，第二基板28之底面(例如包含第二或“覆 蓋”晶圓之一部份，此晶圓例如包含矽)接著封接(亦即接合)到至少一第一基板10之平坦化頂面上，在一些實施例中，封接至使用接合材料層26的晶粒20以及接合材料24上。如上所述，根據實際應用的需求，接合方式可包含表面接合，例如融合接合(fusion bond)、金屬中介層接合(metallic interlayer bond)，例如共晶、熱壓或焊料接合，或絕緣中介層接合(insulating interlayer bond)，例如玻璃熔料或膠黏劑接合。此外，第二基板28晶圓可包含玻璃板或其它適合材料。
本領域之技術人員應當理解的是，第二基板27不必包含第二晶圓之一部份。因此，在一替代實施例中，可省略接合材料層26，替代地，第二基板28可包含聚合物層，例如環氧樹脂樹脂，其模壓至第一基板10之平坦化頂面、晶粒20以及接合材料24上，或在其它替代實施例中，第二基板28可包含TIM層或金屬層。
如第9圖所示，薄化製程(例如CMP製程)可接著施加至第一基板10之背側表面30上，以更進一步降低IC封裝的厚度。本領域之技術人員可注意到，此可藉由箝位第二基板28之頂面至習知的真空或靜電晶圓吸盤上實現。在背面薄化製程之後，第一導電元件32可形成於背側表面30上。如第10圖所示，第一導電元件32可例如包含背矽穿孔TSV，其穿過第一基板10並具有複數個上端，這些上端選擇性耦接設於第一基板10之前側表面16的複數個導電接觸件18。此外，應當理解的是，可採用前矽穿孔製程(via-first process)或中矽穿孔製程(via-middle process)，而在附加晶粒20之前，可提供部分的TSV，並可藉由第9圖中所述的薄化製程以顯露此TSV。
如第11圖所示，如果沒有施加薄化製程，方法可持續在 第一基板10之背側表面30上形成一凸塊下的金屬化層(under bump metallization layer,UBM)，其可包含在其上形成一圖案化導電重分配層(RDL)34，並接著形成耦接對應的UMB及/或RDL 34的導電焊料凸塊36。UMB及/或RDL34係選擇性讓複數個導電元件18之複數個下端、以及UMB及/或RDL 34彼此連接，相似於習知的印刷電路板(PCB)之導電跡線，並可例如藉由在第一基板10之背側表面30上，沈積以及圖案化一絕緣薄層(例如二氧化矽(SiO2))實現(如果此步驟未在形成導電互連32的期間執行)。接著，在表面上沈積以及圖案化一金屬，例如使用Cu蒸鍍法或無電鍍鎳化金法(ENIG)，例如銅(Cu)。第11圖係繪示本發明之一實施例之晶圓夾層切割而成的2D IC封裝38。
然而，如果欲更進一步薄化IC封裝38，可延遲“背面”製程以及對應的元件，以有利於頂部表面上的薄化製程，此薄化製程相似於第9圖中所述的施加至第一基板10之背側表面30上的薄化製程，但本實施例在第一基板10之背側表面30(尚無延遲元件)被習知的晶圓吸盤夾住的期間係施加薄化處理至第二基板28之頂面40上。如第12圖之剖面圖所示，加上實質的薄化2D IC封裝38，把晶圓夾在一起。
如第13圖所示，較佳地，在一些實施例中，第一晶粒20可包含複數個第一晶粒20，這些第一晶粒20相對應地電性耦接設於第一基板10之上表面16上的複數個導電接觸件18，而非單一晶粒20。更進一步，當圖式僅繪示單一晶粒20時，應當理解的是，單一晶粒20可代表垂直互連的堆疊式晶粒，亦即“晶粒堆疊(die stack)”。
第14圖係為相似於第3圖之剖面圖，但第14圖繪示其他 RDL 42亦可形成於第一基板10之前側表面18上，將設於其上的所選的導電接觸件18互相耦接。在形成導電接觸件18之後，可立即形成其他RDL 42。此外，在上述的第一基板10之背側表面30上的RDL 34藉由相同於形成RDL 34的材料以及製程形成。如上所述，如果執行前矽穿孔製程或中矽穿孔製程，在形成其他RDL42之前，TSV可部分地形成於第一基板10上。
第15圖係為相似於第12圖之“2.5D”IC封裝44之一實施例之剖面圖，但第15圖係繪示IC封裝44結合第13圖中所述的第一晶粒20以及第14圖中所述的第二RDL 42。
第16圖係為相似於第12圖之IC封裝38之剖面圖，但第16圖繪示IC封裝38之背側表面上未形成焊料凸塊36的狀態。如下的第17圖至第19A圖中所述，初期的2D封裝38可作為3D IC封裝56的基礎。因此，如第17圖所示，緊接著第16圖之步驟，第一實施例之方法可包含形成第二導電元件46，例如TSV，其穿過第二基板28以及具有複數個下端，這些下端分別耦接設於第一晶粒20之上表面上的所選的導電接觸件，其形成方式相似於第10圖中所述的第一導電元件32之形成方式。
如第18圖所示，每一第二晶粒48(或晶粒堆疊)具有設於其下表面上的複數個導電接觸件，並可使用焊接技術耦接對應的第二導電元件46之相對的上端，其焊接技術相似於第4圖中所述的用於連接第一晶粒20的焊接技術。
在下一步驟，在第二基板28之頂面40上，可沈積接合材料層50，例如氧化物層(例如SiO2)、金屬層、BCB層、TIM層、膠黏層、玻璃層或其相似物，其沈積方式相似於第7圖所述之沈積方式。如第19A圖所 示，第三基板52例如包含第三晶圓之一部份，此第三晶圓例如由矽製成。第三基板52可具有一底面，此底面上具有凹槽54。第三基板52之底面可接著接合至第二基板28之頂面40上，以使第二晶粒48設於凹槽54內。如第8圖中所述，可使用各種晶圓接合技術，以將第二基板28接合至第一基板10上。
在第19A圖所繪示之一特定實施例之3D IC封裝56中，較佳地，利用一填充物包覆第二晶粒48，例如設於凹槽54內的環氧樹脂或TIM，以加強第二晶粒48固設於IC封裝56內，及/或將複數個晶粒48之間加強的導熱路徑提供至圍繞封裝10的周圍區域。如第19A圖所示，在一可能的實施例中，在第三基板52上形成在凹槽54以及第三基板52之頂面60之間延伸的至少一通道58。在貼附第三基板52之前或之後，決定是否注入填充物，而填充物可透過通道58注入及/或逸出凹槽54，從而限制空隙以及致使脫氣(outgassing)等。如上所述，在加入填充物以至少部分地填充第三基板52上的凹槽之前，氧化層或其它無機材料可形成於晶粒20上。減少填充量可降低被填充之凹槽的有效熱膨脹係數(CTE)。
如第8圖所述，第二基板28、第三基板52不必包含第二晶圓之一部份。因此，在一替代實施例中，可省略接合材料層50，替代地，第三基板52可包含聚合物層，例如環氧樹脂，其係塑形至第二基板28之頂面以及第二晶粒48上。
第19B圖係為相似於第13圖之2D封裝38的2D IC封裝62之剖面圖，IC封裝62包含第一接合基板10、第二接合基板28以及第一晶粒20。然而，如第19B圖所示，IC封裝62與IC封裝38相異之處在於第二基板20相似於第一基板10，在IC封裝62之底面上亦具有凹槽62。第二基板28之底 面係接合至第一基板10之頂面上，以使二基板10與28之個別的凹槽16與62結合形成一單一較大的凹槽64，第一晶粒20設於此凹槽64內。此外，如第19B圖中所述之實施例，較佳地，透過形成於第二基板28內的貫穿通道66，將材料注入擴展凹槽64內，以利用填充物包覆第一晶粒20，例如環氧樹脂或熱介面材料。如上所述，凹槽亦可至少部分地使用一無機材料填充，例如氧化層。因此，藉由上述之第一實施例之方法製造的第18B圖之IC封裝62，可提供適用於較厚晶粒、晶粒堆疊或系統單晶片(SOC)元件的一多凹槽方案。
第20圖至第30圖係為至少一晶圓之多個部分之局部剖面圖，其係繪示根據本發明之第二實施例之製作2D、2.5D及/或3D IC封裝之晶圓級方法之依序步驟以及透過此方法製成的多個示例性封裝。
第20圖係為定義第一基板100的一完整厚度晶圓之一部份之剖面圖，此第一基板100係具有前側表面102以及背側表面104，此前側表面102上具有複數個導電接觸件106。第20圖所繪示的第一基板100係相似於第3圖所繪示之第一基板10，但在本實施例中，基板100之頂面缺乏凹槽。除了此差異外，基板100可使用相同於第1圖至第3圖中所述的製作基板10的材料以及製程製作。
第21圖係為定義第二基板108之一替代實施例之晶圓之一部份之剖面圖，第二基板108具有一開孔110，此開孔110以窗框(window frame)方式延伸穿過第二基板108。如第22圖所示，在第一基板100之前側表面102之容限區域(marginal area)上，可設至一接合材料層112，此容限區域圍繞導電接觸件106，可使用相似於第8圖、第19A圖以及第19B圖中所述的 方法，將第二基板108之底面114接合至第一基板100之前側表面102上，以定義第一凹槽116。
本領域之技術人員應當理解的是，第22圖之實施例基本上相似於第3圖中所述之第一實施例，後續製程可基本上相似於第一實施例中之製程。因此，如第23圖所示，第一晶粒118包含IC，此IC可設於第一凹槽116內，並可例如使用回焊的焊料凸塊，電性耦接設於第一基板100之上表面102上的對應的接觸件106，如第24圖所示，在第一晶粒118貼附至第一基板100上之後，可同時施加蝕刻製程至第二基板108之頂面120與122以及晶粒118上，以降低IC封裝的厚度。如第25圖所示，在第二基板108以及晶粒118薄化成期望的厚度之後，可使用一介電接合材料124填充第一凹槽116，例如環氧樹脂，以堅固地支撐以及保護第一凹槽116內的晶粒118。如上所述，較佳地，凹槽116亦可至少部分地使用一無機材料填充，例如氧化層，讓已填充凹槽之有效熱膨脹係數(CTE)更匹配晶粒118以及基板100與108的熱膨脹係數(CTE)。
如第25圖所示，第二基板108之個別的頂面、晶粒118以及接合材料124可接著平坦化，例如使用CMP製程，以使第二基板108之頂面、第一晶粒118以及設於第一凹槽116內的接合材料124相互共平面。下一步驟，如第26圖所示，接合材料層126可沈積於平坦化表面上。如上所述，接合材料可例如包含氧化物層(例如SiO2)、金屬層、苯環丁烯(BCB)層、熱介面材料(TIM)層、膠黏層、玻璃層或其相似物。
如第27圖所示，第三基板128之底面可包含第三晶圓或“覆 蓋”晶圓之一部份，此晶圓例如包含矽，第三基板128之底面可接著接合到至少第二基板108之平坦化頂面上；或者，在一些實施例中，係接合至使用接合材料層26的第一晶粒118以及接合材料124上。如上所述，根據實際應用之需求，所使用的接合方法可包含習知的各種晶圓接合技術。
如上所述，第三基板128不必包含第三晶圓之一部份。因此，在一替代實施例中，可省略接合材料層126，替代地，第三基板128可包含玻璃層、聚合物(例如環氧樹脂)層或金屬層，其經由模壓成型或接合至第二基板108、第一晶粒20以及接合材料124之平坦化頂面上。
如第28圖所示，接著可在第一基板100之背側表面104上施作一薄化製程，例如CMP製程，以更進一步降低IC封裝的厚度。如上所述，可藉由習知的真空或靜電晶圓吸盤將第三基板128之頂面夾住。在背面薄化製程之後，第一導電元件130可形成於背側表面104上。如第30圖所示，第一導電元件130可例如包含複數個背穿孔製程(via-last-process)TSV，其穿過第一基板100以及具有複數個上端，這些上端係耦接設於第一晶粒100之前側表面102上的所選的導電接觸件106。
如果沒有施作其他薄化製程，接著如第30圖所示，此方法可繼續在第一基板100之背側表面104上，形成一凸塊下的金屬化層(under bump metallization layer，UBM)，其可包含在其上形成一圖案化導電重分配層(RDL)132，並接著形成複數個導電焊料凸塊36，這些導電焊料凸塊36分別耦接對應的UMB及/或RDL132。UMB及/或RDL132選擇性將複數個導電元件106之複數個下端、UMB及/或RDL132相互連接，並可使用相同於第15圖中所述之第一實施例之形成背側表面RDL34的材料以及製程實現。第 30圖係繪示由晶圓夾層切割而成的2D IC封裝134之一實施例。
本領域之技術人員應當理解的是，除了“窗框(window frame)”第二基板108用於定義第一凹槽116外，第30圖之2D IC封裝134基本上相似於第11圖中所述的2D IC封裝38。因此，使用用於降低IC封裝的厚度的所有相同材料以及製程，以形成另一或額外的RDL，及/或使用第12圖至第19B圖所述的單一及/或複數個第一晶粒以及第二晶粒，以組合3D IC封裝，本實施例相似於第30圖中所述之實施例。因此，為簡便起見，可省略詳細描述這些替代實施例。
100‧‧‧基板
106‧‧‧導電接觸件
108‧‧‧基板
112‧‧‧接合材料層
118‧‧‧晶粒
124‧‧‧接合材料
126‧‧‧接合材料層
128‧‧‧基板
130‧‧‧導電元件
132‧‧‧重分配層(RDL)
134‧‧‧封裝

Claims (9)

  1. 一種積體電路(IC)封裝，包含：一第一基板，具有一背側表面及一頂面，該頂面上具有一凹槽，該凹槽具有一底部(Floor)用以定義一前側表面；其中該第一基板包含一半導體；複數個第一導電接觸件，係設置於該前側表面上；複數個第二導電接觸件，係設置於該背側表面上；複數個第一導電元件，係穿過該第一基板，並與所選的該複數個第一導電接觸件與該複數個第二導電接觸件相互耦接；一第一晶粒，係包含一IC，該IC係電性耦接對應的該複數個第一導電接觸件；其中該第一晶粒包含一半導體；一第二基板，係具有封接至該第一基板之該頂面上之一底面；其中該第二基板包含一半導體；一介電材料，係設置於該凹槽內以包覆該第一晶粒；以及一覆蓋件，係包含：一第三基板，具有一底面及一第二凹槽，該底面係封接至該第二基板之該頂面以定義出一底面，以使一第二晶粒設於該第二凹槽內；以及一介電材料，係設置於該第二凹槽內並包覆該第二晶粒。
  2. 如申請專利範圍第1項所述之IC封裝，更包含：複數個第三導電接觸件，係設置於該第一晶粒之一頂面上；複數個第四導電接觸件，係設置於該第二基板之一頂面上； 複數個第二導電元件，係穿過該第二基板，將所選的該複數個第三導電接觸件及該複數個第四導電接觸件互相耦接；其中該第二晶粒係包含一IC，該IC係電性耦接對應的該複數個第四導電接觸件；以及其中該覆蓋件，具有封接至該第二基板之該頂面上之該底面，該覆蓋件係包覆該第二晶粒。
  3. 如申請專利範圍第2項所述之IC封裝，其中該覆蓋件包含一聚合物，該聚合物模壓至該第二基板之該頂面上，並包覆該第二晶粒。
  4. 如申請專利範圍第1項所述之IC封裝，其中該介電材料包含一無機材料。
  5. 如申請專利範圍第1項所述之IC封裝，其中該第三基板包含一半導體。
  6. 如申請專利範圍第2項所述之IC封裝，更包含一導電重分配層(RDL)，其設於該第一基板之該前側表面、該第一基板之該背側表面及/或該第二基板之該頂面中之至少一個上，並將分別設置於其上所選的該複數個導電接觸件互相耦接。
  7. 如申請專利範圍第2項所述之IC封裝，其中穿過該第一基板及該第二基板的該複數個導電元件中之至少一個係包含一矽晶穿孔(TSV)。
  8. 如申請專利範圍第2項所述之IC封裝，其中該第一晶粒及該第二晶粒中之至少一個係藉由複數個焊料凸塊電性耦接對應的該複數個導電接觸件。
  9. 如申請專利範圍第2項所述之IC封裝，其中該第一晶粒、該第二晶粒或第二及第二晶粒二者係包含複數個晶粒。
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