TWI595813B - 配線基板及製造其之方法 - Google Patents

配線基板及製造其之方法 Download PDF

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Publication number
TWI595813B
TWI595813B TW101134128A TW101134128A TWI595813B TW I595813 B TWI595813 B TW I595813B TW 101134128 A TW101134128 A TW 101134128A TW 101134128 A TW101134128 A TW 101134128A TW I595813 B TWI595813 B TW I595813B
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Taiwan
Prior art keywords
layer
connection pad
support plate
metal layer
insulating layer
Prior art date
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TW101134128A
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English (en)
Chinese (zh)
Other versions
TW201325341A (zh
Inventor
金子健太郎
大宮敏光
小谷幸太郎
中村順一
小林和弘
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新光電氣工業股份有限公司
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Publication of TW201325341A publication Critical patent/TW201325341A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
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    • H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
    • H05K1/113—Via provided in pad; Pad over filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/73201—Location after the connecting process on the same surface
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    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
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    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
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    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0376—Flush conductors, i.e. flush with the surface of the printed circuit
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
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    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0369—Etching selective parts of a metal substrate through part of its thickness, e.g. using etch resist
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    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/06—Lamination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structure Of Printed Boards (AREA)
TW101134128A 2011-09-27 2012-09-18 配線基板及製造其之方法 TWI595813B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011210212A JP5795225B2 (ja) 2011-09-27 2011-09-27 配線基板の製造方法

Publications (2)

Publication Number Publication Date
TW201325341A TW201325341A (zh) 2013-06-16
TWI595813B true TWI595813B (zh) 2017-08-11

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Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9299649B2 (en) 2013-02-08 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. 3D packages and methods for forming the same
US8802504B1 (en) * 2013-03-14 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. 3D packages and methods for forming the same
KR20150002492A (ko) * 2013-06-28 2015-01-07 쿄세라 서킷 솔루션즈 가부시키가이샤 배선 기판
JP6131135B2 (ja) * 2013-07-11 2017-05-17 新光電気工業株式会社 配線基板及びその製造方法
JP6223909B2 (ja) * 2013-07-11 2017-11-01 新光電気工業株式会社 配線基板及びその製造方法
US9620446B2 (en) * 2014-12-10 2017-04-11 Shinko Electric Industries Co., Ltd. Wiring board, electronic component device, and method for manufacturing those
KR102411996B1 (ko) * 2015-05-29 2022-06-22 삼성전기주식회사 패키지 기판 및 그 제조 방법
JP6623028B2 (ja) * 2015-10-27 2019-12-18 新光電気工業株式会社 インダクタ装置及びその製造方法
KR102691326B1 (ko) * 2016-12-21 2024-08-05 삼성전기주식회사 인쇄회로기판 및 패키지
CN108231723B (zh) * 2016-12-22 2020-08-07 中芯国际集成电路制造(上海)有限公司 封装结构及其形成方法
US10986790B2 (en) 2017-12-17 2021-04-27 Timothy Glaude System for infusing a gas or liquids into the roots of a plant
US12198992B2 (en) 2019-03-25 2025-01-14 Kyocera Corporation Electronic element housing package and electronic apparatus
WO2021031125A1 (zh) * 2019-08-20 2021-02-25 华为技术有限公司 线路嵌入式基板、芯片封装结构及基板制备方法
JP2021093417A (ja) * 2019-12-09 2021-06-17 イビデン株式会社 プリント配線板、及び、プリント配線板の製造方法
US20230004243A1 (en) * 2020-01-08 2023-01-05 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing wiring body, pattern plate, and wiring body
US11315862B2 (en) * 2020-01-31 2022-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof
KR102853086B1 (ko) 2020-08-19 2025-09-02 삼성전자주식회사 반도체 패키지
KR20220031398A (ko) * 2020-09-04 2022-03-11 삼성전기주식회사 인쇄회로기판
KR20230136737A (ko) * 2021-01-26 2023-09-26 도요보 가부시키가이샤 적층체의 제조 방법, 적층체, 및 다층 적층체
JP7711870B2 (ja) * 2021-10-19 2025-07-23 新光電気工業株式会社 配線基板及びその製造方法
JP7700986B2 (ja) * 2021-10-19 2025-07-01 新光電気工業株式会社 配線基板及びその製造方法
TWI831123B (zh) * 2022-01-28 2024-02-01 巨擘科技股份有限公司 多層基板表面處理層結構
JP2023125724A (ja) * 2022-02-28 2023-09-07 新光電気工業株式会社 配線基板及びその製造方法
WO2025047324A1 (ja) * 2023-08-29 2025-03-06 京セラ株式会社 配線基板、パッケージ、および圧電デバイス

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229512A (ja) * 2002-02-01 2003-08-15 Nec Toppan Circuit Solutions Toyama Inc 半導体チップ搭載用基板およびその製造方法と半導体装置およびその製造方法
TW200847348A (en) * 2007-05-30 2008-12-01 Shinko Electric Ind Co Wiring board and its fabricating method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4125441A (en) * 1978-01-30 1978-11-14 General Dynamics Corporation Isolated bump circuitry on tape utilizing electroforming
US5136456A (en) * 1989-11-17 1992-08-04 Sigma Instruments, Inc. Faulted current indicator with protection against temporary overloads and transients
US5329695A (en) * 1992-09-01 1994-07-19 Rogers Corporation Method of manufacturing a multilayer circuit board
JP3346263B2 (ja) 1997-04-11 2002-11-18 イビデン株式会社 プリント配線板及びその製造方法
US6306751B1 (en) * 1999-09-27 2001-10-23 Lsi Logic Corporation Apparatus and method for improving ball joints in semiconductor packages
US6723927B1 (en) * 2000-08-24 2004-04-20 High Connection Density, Inc. High-reliability interposer for low cost and high reliability applications
US7365414B2 (en) * 2003-12-01 2008-04-29 Intel Corporation Component packaging apparatus, systems, and methods
JP4146864B2 (ja) * 2005-05-31 2008-09-10 新光電気工業株式会社 配線基板及びその製造方法、並びに半導体装置及び半導体装置の製造方法
JP4819471B2 (ja) 2005-10-12 2011-11-24 日本電気株式会社 配線基板及び配線基板を用いた半導体装置並びにその製造方法
US7911038B2 (en) 2006-06-30 2011-03-22 Renesas Electronics Corporation Wiring board, semiconductor device using wiring board and their manufacturing methods
JP5120342B2 (ja) * 2009-06-18 2013-01-16 ソニー株式会社 半導体パッケージの製造方法
US8127979B1 (en) * 2010-09-25 2012-03-06 Intel Corporation Electrolytic depositon and via filling in coreless substrate processing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229512A (ja) * 2002-02-01 2003-08-15 Nec Toppan Circuit Solutions Toyama Inc 半導体チップ搭載用基板およびその製造方法と半導体装置およびその製造方法
TW200847348A (en) * 2007-05-30 2008-12-01 Shinko Electric Ind Co Wiring board and its fabricating method

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