TWI590951B - 積層體、阻氣薄膜、積層體之製造方法及積層體製造裝置 - Google Patents
積層體、阻氣薄膜、積層體之製造方法及積層體製造裝置 Download PDFInfo
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- TWI590951B TWI590951B TW101127103A TW101127103A TWI590951B TW I590951 B TWI590951 B TW I590951B TW 101127103 A TW101127103 A TW 101127103A TW 101127103 A TW101127103 A TW 101127103A TW I590951 B TWI590951 B TW I590951B
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Laminated Bodies (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
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JP2011165904 | 2011-07-28 | ||
JP2011165903 | 2011-07-28 |
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EP (1) | EP2740593A4 (fr) |
JP (2) | JP6123672B2 (fr) |
KR (1) | KR102081210B1 (fr) |
CN (1) | CN103732393B (fr) |
TW (1) | TWI590951B (fr) |
WO (1) | WO2013015417A1 (fr) |
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CN103732393B (zh) * | 2011-07-28 | 2016-10-05 | 凸版印刷株式会社 | 层叠体、阻气膜、层叠体的制造方法及层叠体制造装置 |
WO2013015412A1 (fr) * | 2011-07-28 | 2013-01-31 | 凸版印刷株式会社 | Corps stratifié, film de barrière au gaz et procédé de production de corps stratifié et de film de barrière au gaz |
JP6477462B2 (ja) * | 2013-03-27 | 2019-03-06 | 凸版印刷株式会社 | 積層体及びガスバリアフィルム |
WO2014156932A1 (fr) * | 2013-03-27 | 2014-10-02 | 凸版印刷株式会社 | Corps stratifié, film de barrière et procédé de fabrication de ceux-ci |
TWI700180B (zh) * | 2013-12-11 | 2020-08-01 | 日商凸版印刷股份有限公司 | 積層體、及阻氣性薄膜 |
JP6330316B2 (ja) * | 2013-12-19 | 2018-05-30 | 凸版印刷株式会社 | 積層体、バリアフィルム、及びこれらの製造方法 |
JP2015132007A (ja) * | 2014-01-15 | 2015-07-23 | 凸版印刷株式会社 | 積層体の製造方法、及び積層体製造装置 |
WO2015133441A1 (fr) * | 2014-03-04 | 2015-09-11 | 東洋製罐グループホールディングス株式会社 | Stratifié faisant barrière contre les gaz |
JP2015166170A (ja) * | 2014-03-04 | 2015-09-24 | 東洋製罐グループホールディングス株式会社 | ガスバリア性積層体 |
JP2015178231A (ja) * | 2014-03-19 | 2015-10-08 | 東洋製罐グループホールディングス株式会社 | ガスバリア性積層構造体 |
JP6442874B2 (ja) * | 2014-05-30 | 2018-12-26 | 凸版印刷株式会社 | 積層体の製造方法、及び積層体製造装置 |
KR102459808B1 (ko) * | 2014-06-13 | 2022-10-28 | 바스프 코팅스 게엠베하 | 유기물-무기물 라미네이트의 제조 방법 |
CN106661727B (zh) * | 2014-07-29 | 2020-05-05 | 凸版印刷株式会社 | 层叠体及其制造方法、以及阻气膜及其制造方法 |
JP6554810B2 (ja) * | 2015-02-16 | 2019-08-07 | 凸版印刷株式会社 | 積層体及びその製造方法、並びにガスバリアフィルム |
JP6524702B2 (ja) | 2015-02-26 | 2019-06-05 | 凸版印刷株式会社 | ガスバリア性フィルムの製造方法及びガスバリア性フィルム |
JP5906507B1 (ja) * | 2015-02-27 | 2016-04-20 | 株式会社昭和真空 | 多層膜被覆樹脂基板およびその製造方法 |
WO2016167348A1 (fr) * | 2015-04-16 | 2016-10-20 | 凸版印刷株式会社 | Stratifié et film formant barrière aux gaz |
JP6657588B2 (ja) * | 2015-04-17 | 2020-03-04 | 凸版印刷株式会社 | 積層体及びその製造方法 |
DE102015122024A1 (de) * | 2015-12-16 | 2017-06-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen eines Schichtverbundes bestehend aus einer Kunststofffolie und einer darauf abgeschiedenen Schicht |
CN108472927B (zh) * | 2015-12-28 | 2022-02-25 | 凸版印刷株式会社 | 层叠体及其制造方法、阻气膜及其制造方法、以及有机发光元件 |
JP6849874B2 (ja) * | 2016-07-27 | 2021-03-31 | 株式会社Flosfia | 積層構造体の製造方法 |
JP6944664B2 (ja) * | 2016-08-05 | 2021-10-06 | 大日本印刷株式会社 | バリア性フィルム |
JP6834230B2 (ja) * | 2016-08-05 | 2021-02-24 | 大日本印刷株式会社 | バリア性フィルム |
WO2018056401A1 (fr) * | 2016-09-23 | 2018-03-29 | 凸版印刷株式会社 | Film optique barrière aux gaz et dispositif d'affichage électroluminescent (el) organique |
CN111971168B (zh) * | 2018-02-02 | 2023-09-05 | 凸版印刷株式会社 | 阻气膜及其制造方法 |
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CN109442101B (zh) * | 2018-10-08 | 2024-03-01 | 上海伟星新型建材有限公司 | 一种具有外层疏水功能的阻氧管材 |
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JP2021172841A (ja) * | 2020-04-22 | 2021-11-01 | 東京エレクトロン株式会社 | 成膜方法 |
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JP2010000743A (ja) * | 2008-06-23 | 2010-01-07 | Toppan Printing Co Ltd | ガスバリア積層体 |
JP2010016286A (ja) * | 2008-07-07 | 2010-01-21 | Toppan Printing Co Ltd | 太陽電池裏面封止用シート |
JP5776132B2 (ja) * | 2009-04-03 | 2015-09-09 | 凸版印刷株式会社 | 成膜装置 |
JP2011165903A (ja) | 2010-02-10 | 2011-08-25 | Rohm Co Ltd | 半導体モジュールおよび半導体モジュールの製造方法 |
JP5668294B2 (ja) * | 2010-02-23 | 2015-02-12 | 凸版印刷株式会社 | ガスバリアフィルムおよびその製造方法 |
CN103732393B (zh) * | 2011-07-28 | 2016-10-05 | 凸版印刷株式会社 | 层叠体、阻气膜、层叠体的制造方法及层叠体制造装置 |
-
2012
- 2012-07-27 CN CN201280037062.9A patent/CN103732393B/zh active Active
- 2012-07-27 KR KR1020147001358A patent/KR102081210B1/ko active IP Right Grant
- 2012-07-27 WO PCT/JP2012/069191 patent/WO2013015417A1/fr active Application Filing
- 2012-07-27 JP JP2013525782A patent/JP6123672B2/ja not_active Expired - Fee Related
- 2012-07-27 TW TW101127103A patent/TWI590951B/zh not_active IP Right Cessation
- 2012-07-27 EP EP12817195.6A patent/EP2740593A4/fr not_active Withdrawn
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2014
- 2014-01-27 US US14/164,766 patent/US20140141218A1/en not_active Abandoned
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2017
- 2017-04-06 JP JP2017076189A patent/JP6508245B2/ja active Active
Also Published As
Publication number | Publication date |
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CN103732393B (zh) | 2016-10-05 |
CN103732393A (zh) | 2014-04-16 |
JP6123672B2 (ja) | 2017-05-10 |
KR102081210B1 (ko) | 2020-02-25 |
JP2017124633A (ja) | 2017-07-20 |
TW201323226A (zh) | 2013-06-16 |
JP6508245B2 (ja) | 2019-05-08 |
EP2740593A4 (fr) | 2015-04-15 |
US20140141218A1 (en) | 2014-05-22 |
EP2740593A1 (fr) | 2014-06-11 |
KR20140043787A (ko) | 2014-04-10 |
WO2013015417A1 (fr) | 2013-01-31 |
JPWO2013015417A1 (ja) | 2015-02-23 |
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