JP5309638B2 - 電子部品 - Google Patents
電子部品 Download PDFInfo
- Publication number
- JP5309638B2 JP5309638B2 JP2008074081A JP2008074081A JP5309638B2 JP 5309638 B2 JP5309638 B2 JP 5309638B2 JP 2008074081 A JP2008074081 A JP 2008074081A JP 2008074081 A JP2008074081 A JP 2008074081A JP 5309638 B2 JP5309638 B2 JP 5309638B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- moisture
- polysilazane
- resin substrate
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920001709 polysilazane Polymers 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000001681 protective effect Effects 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 38
- 229920005989 resin Polymers 0.000 claims abstract description 38
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 12
- 239000011147 inorganic material Substances 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000007733 ion plating Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 230000035515 penetration Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 134
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 230000035699 permeability Effects 0.000 description 16
- 238000012360 testing method Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 14
- 238000003860 storage Methods 0.000 description 10
- 229910007991 Si-N Inorganic materials 0.000 description 9
- 229910006294 Si—N Inorganic materials 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 229910052791 calcium Inorganic materials 0.000 description 6
- 239000011575 calcium Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Landscapes
- Laminated Bodies (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Description
−(SiH2NH)−
で表される繰り返し単位を有するポリシラザンから形成された膜である。ポリシラザンは、下記反応によって水と反応してシリカ(SiO2)を生成する。この反応により、ポリシラザン膜30は水分を吸収する機能を発揮する。
−(SiH2NH)− + 2H2O → SiO2 + NH3
Claims (3)
- 樹脂基板と、該樹脂基板上に設けられた防湿部と、を備え、
該防湿部が無機材料を含有する複数の保護膜と複数のポリシラザン膜とを有し、それらが交互に積層されており、前記ポリシラザン膜、及び前記樹脂基板と前記ポリシラザン膜との間に配置された前記保護膜、の組合せが複数組積層されており、
前記ポリシラザン膜の硬化率が20%以下である、
電子部品。 - 前記ポリシラザン膜の厚さが100〜2000nmである、請求項1記載の電子部品。
- 前記保護膜が、スパッタ、イオンプレーティング、CVD又はALDによって形成された膜である、請求項1又は2記載の電子部品。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008074081A JP5309638B2 (ja) | 2008-03-21 | 2008-03-21 | 電子部品 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008074081A JP5309638B2 (ja) | 2008-03-21 | 2008-03-21 | 電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009226707A JP2009226707A (ja) | 2009-10-08 |
JP5309638B2 true JP5309638B2 (ja) | 2013-10-09 |
Family
ID=41242707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008074081A Active JP5309638B2 (ja) | 2008-03-21 | 2008-03-21 | 電子部品 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5309638B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7128726B2 (ja) | 2018-11-21 | 2022-08-31 | ケイミュー株式会社 | 窯業系建築板及びその製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101430892B1 (ko) | 2010-12-27 | 2014-08-18 | 코니카 미놀타 가부시키가이샤 | 가스 배리어성 필름 및 전자 디바이스 |
WO2013015417A1 (ja) * | 2011-07-28 | 2013-01-31 | 凸版印刷株式会社 | 積層体、ガスバリアフィルム、積層体の製造方法、及び積層体製造装置 |
JP5895684B2 (ja) * | 2012-04-24 | 2016-03-30 | コニカミノルタ株式会社 | ガスバリア性フィルムの製造方法、および前記ガスバリア性フィルムを用いた電子デバイスの製造方法 |
US20150099126A1 (en) * | 2012-04-25 | 2015-04-09 | Konica Minolta, Inc. | Gas barrier film, substrate for electronic device and electronic device |
KR101803994B1 (ko) * | 2013-09-30 | 2017-12-01 | 주식회사 엘지화학 | 복합층, 이를 포함하는 복합필름 및 전기소자 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05311120A (ja) * | 1992-05-13 | 1993-11-22 | Denki Kagaku Kogyo Kk | 紫外線遮蔽ガラス保護膜形成用組成物および紫外線遮蔽ガラス |
JP2003118030A (ja) * | 2001-10-16 | 2003-04-23 | Asahi Glass Co Ltd | ガスバリヤ性有機基材およびそれを用いたエレクトロルミネッセンス素子 |
JP2005056587A (ja) * | 2003-08-01 | 2005-03-03 | Toyota Industries Corp | El装置及びその製造方法 |
WO2006025356A1 (ja) * | 2004-09-01 | 2006-03-09 | Konica Minolta Holdings, Inc. | ガスバリア積層体及びその製造方法 |
JP5163491B2 (ja) * | 2006-04-21 | 2013-03-13 | コニカミノルタホールディングス株式会社 | ガスバリアフィルムの製造方法、有機エレクトロルミネッセンス用樹脂基材、それを用いた有機エレクトロルミネッセンス素子 |
-
2008
- 2008-03-21 JP JP2008074081A patent/JP5309638B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7128726B2 (ja) | 2018-11-21 | 2022-08-31 | ケイミュー株式会社 | 窯業系建築板及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2009226707A (ja) | 2009-10-08 |
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