JP6124896B2 - 改善されたガス不浸透性を与える多層構造体 - Google Patents
改善されたガス不浸透性を与える多層構造体 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 60
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 53
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
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Description
(a)ペルヒドロポリシラザンタイプの液体の無機前駆体を基板に堆積する段階と、
(b)前記SiO2の層及び前記SiOxNyHzタイプの材料の層の積層体を形成するように、10ppmを超え、500ppm未満の酸素含有量、及び、1000ppm以下の水含有量を有する雰囲気で、220nm以下の波長を有するVUV放射及び220nm以上の波長を有する紫外線放射による照射によって転換する段階と、
を含む、本発明による多層構造体の製造方法である。
(a’)基板上に前記基板上のペルヒドロポリシラザンタイプの液体の無機前駆体を堆積する段階と、
(b’)10ppm未満の水含有量及び酸素含有量を有する雰囲気で、220nmを超える波長を有する紫外線放射による照射によって変換する段階と、
(c’)段階(b’)において形成される層上に、前記基板上の前記ペルヒドロポリシラザンタイプの液体の無機前駆体を堆積する段階と、
(d’)10ppmを超え、500ppm未満の酸素含有量有する雰囲気で、220nm以下の波長を有するVUV放射による照射によって転換する段階と、
を含む、多層構造体の製造方法である。
eA≦60nm、
eB≧2eA、
100nm<eA+eB<500nm。
MA>30GPa、及び
MB<20GPa。
eA2≦60nm、
eB2≧2eA2、
100nm<eA2+eB2<500nm。
I:PETポリマーのみで作られる基板、
II:eA=50nm及びeB=200nmである、本発明による構造体S1、
III:eA1=eA2=50nm及びeB1=eB2=200nmである、本発明による構造体S2。
4 ポリマー材料層
A 第1の層
A1 第1の層
A2 第1の層
B 第2の層
B1 第2の層
B2 第2の層
E1 第1の積層体
E2 第2の積層体
S1 構造体
S2 構造体
S3 構造体
S4 構造体
Claims (22)
- 基板(2)、並びに、SiO2の層(A)及び前記基板(2)と前記SiO2の層(A)との間に位置するSiOxNyHzタイプの材料の層(B)の第1の積層体、を含む多層構造体であって、
前記SiO2の層(A)の厚さが60nm以下であり、前記SiOxNyHzタイプの材料の層(B)の厚さ(eB)が前記SiO2の層(A)の厚さ(eA)の2倍を超え、前記SiO2の層(A)及び前記SiOxNyHzタイプの材料の層(B)の厚さの合計が100nmから500nmの間にあるように前記SiO2の層(A)及び前記SiOxNyHzタイプの材料の層(B)が厚さ(eB、eA)を有し、
zが、正であり、(x+y)/5の比未満である、多層構造体。 - zが、(x+y)/10の比未満である、請求項1に記載の多層構造体。
- xの値が、前記SiOxNyHzタイプの材料の層(B)と前記SiO2の層との界面から前記基板に向かって減少し、yの値が、前記SiOxNyHzタイプの材料の層(B)と前記SiO2の層との界面から前記基板に向かって増加する、請求項1または2に記載の多層構造体。
- xが2から0まで変化し、及び/又は、yが0から1まで変化する、請求項3に記載の多層構造体。
- 前記SiO2の層(A)の材料が、30GPa以上のヤング率を有し、前記SiOxNyHzタイプの材料の層(B)が、20GPa以下のヤング率(MB)を有する、請求項1から4の何れか一項に記載の多層構造体。
- 前記多層構造体の前記積層体が、1.5を超える屈折率を有する、請求項1から5の何れか一項に記載の多層構造体。
- 前記1つの積層体又は複数の積層体が、ペルヒドロポリシラザンタイプの無機前駆体の転換によって得られ、前記積層体が、ポリマー材料で作られる基板の場合に赤外線反射分光分析によって測定される、転換前の前記ペルヒドロポリシラザンタイプの無機前駆体のSi−H結合の透過率の80%を超えるSi−H結合に相当する透過率を有する、請求項5または6に記載の多層構造体。
- 前記積層体が、ポリマー材料で作られる基板の場合に赤外線反射分光分析によって測定される、転換前の前記ペルヒドロポリシラザンタイプの無機前駆体のSi−H結合の透過率の90%を超えるSi−H結合に相当する透過率を有する、請求項7に記載の多層構造体。
- 前記1つの積層体又は複数の積層体が、ペルヒドロポリシラザンタイプの無機前駆体の転換によって得られ、前記積層体が、シリコン基板の場合に赤外線透過分光分析によって測定される、転換前の前記ペルヒドロポリシラザンタイプの無機前駆体Si−H結合の吸光度の20%未満のSi−H結合に相当する吸光度を有する、請求項5または6に記載の多層構造体。
- 前記1つの積層体又は複数の積層体が、ペルヒドロポリシラザンタイプの無機前駆体の転換によって得られ、前記積層体が、シリコン基板の場合に赤外線透過分光分析によって測定される、転換前の前記ペルヒドロポリシラザンタイプの無機前駆体Si−H結合の吸光度の10%未満のSi−H結合に相当する吸光度を有する、請求項9に記載の多層構造体。
- 前記SiO2の層(A)及び前記SiOxNyHzタイプの材料で作られる層(B)が非晶質材料で作られる、請求項1から10の何れか一項に記載の多層構造体。
- 前記基板(2)が、ポリマー材料で作られる、請求項1から11の何れか一項に記載の多層構造体。
- 前記基板(2)が、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステルタイプ、又は、ポリエチレン(PE)、ポリプロピレン(PP)等のポリオレフィンタイプ、又は、ポロアミドタイプのポリマー材料である、請求項12に記載の多層構造体。
- 前記SiOxNyHzタイプの材料で作られる層(B)に接触する面と対向する面において前記第1の積層体のSiO2の層(A)上にポリマー材料の層(4)を含む、請求項1から13の何れか一項に記載の多層構造体。
- n個の積層体を含み、nは、1以上の整数であり、各積層体が、(SiO2)iの層及びSiOxiNyiHziタイプの材料の層を含み、iが、1からnまでの整数であり、
前記(SiO2)iの層(A)の厚さが60nm以下であり、前記SiOxiNyiHziタイプの材料の層(B)の厚さ(eB)が前記(SiO2)iの層(A)の厚さ(eA)の2倍を超え、前記(SiO2)iの層(A)及び前記SiOxiNyiHziタイプの材料の層(B)の厚さの合計が100nmから500nmの間にあるように、各積層体の(SiO2)iの層及びSiOxiNyiHziタイプの材料の層が厚さ(eB、eA)を有し、
ziが、(xi+yi)/5の比未満である、請求項1から13の何れか一項に記載の多層構造体。 - ziが、(xi+yi)/10の比未満であり、xi、yi及びziが、種々の値のiに対して同一であってもよく、同一でなくてもよい、請求項15に記載の多層構造体。
- 一の積層体の前記(SiO2)iの層及びその直後に続く前記積層体の前記SiOxiNyiHziタイプの材料の層の間に位置するポリマー材料で作られる少なくとも1つの層を含む、請求項16に記載の多層構造体。
- ポリマー材料で作られるn−1個の層を含み、前記ポリマー材料で作られる層の各々が、2つの積層体の間に位置する、請求項17に記載の多層構造体。
- (a)ペルヒドロポリシラザンタイプの液体の無機前駆体を基板に堆積する段階と、
(b)前記SiO2の層及び前記SiOxNyHzタイプの材料の層の積層体を形成するように、10ppmを超え、500ppm未満の酸素含有量、及び、1000ppm以下の水含有量を有する雰囲気で、220nm以下の波長を有するVUV放射及び220nm以上の波長を有する紫外線放射による照射によって転換する段階と、
を含む、請求項1から18の何れか一項に記載の多層構造体の製造方法。 - 段階(b)の後にポリマー材料の層を堆積する段階(c)を含む、請求項19に記載の製造方法。
- 段階(a)及び(b)、又は、段階(a)、(b)及び(c)を繰り返すことを含む、請求項19または20に記載の製造方法。
- (a’)基板上に前記基板上のペルヒドロポリシラザンタイプの液体の無機前駆体を堆積する段階と、
(b’)10ppm未満の水含有量及び酸素含有量を有する雰囲気で、220nmを超える波長を有する紫外線放射による照射によって転換する段階と、
(c’)段階(b’)において形成される層上に、前記基板上の前記ペルヒドロポリシラザンタイプの液体の無機前駆体を堆積する段階と、
(d’)10ppmを超え、500ppm未満の酸素含有量有する雰囲気で、220nm以下の波長を有するVUV放射による照射によって転換する段階と、
を含む、請求項1から18の何れか一項に記載の多層構造体の製造方法。
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KR20120008360A (ko) * | 2010-07-16 | 2012-01-30 | 삼성모바일디스플레이주식회사 | 플렉서블 디스플레이용 기판 및 그 제조 방법 |
JP5747915B2 (ja) * | 2010-07-22 | 2015-07-15 | コニカミノルタ株式会社 | ガスバリアフィルムの製造方法 |
WO2012014653A1 (ja) * | 2010-07-27 | 2012-02-02 | コニカミノルタホールディングス株式会社 | ガスバリア性フィルム、ガスバリア性フィルムの製造方法及び電子デバイス |
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JP5803937B2 (ja) * | 2010-12-06 | 2015-11-04 | コニカミノルタ株式会社 | ガスバリア性フィルム、ガスバリア性フィルムの製造方法及び電子デバイス |
EP2660041B1 (en) * | 2010-12-27 | 2015-06-17 | Konica Minolta, Inc. | Gas-barrier film and electronic device |
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KR101921131B1 (ko) * | 2011-09-08 | 2018-11-22 | 린텍 가부시키가이샤 | 변성 폴리실라잔 필름, 및, 가스 배리어 필름의 제조 방법 |
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US20140117511A1 (en) * | 2012-10-30 | 2014-05-01 | Infineon Technologies Ag | Passivation Layer and Method of Making a Passivation Layer |
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2011
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- 2012-09-24 KR KR1020147008430A patent/KR20140067079A/ko not_active Application Discontinuation
- 2012-09-24 WO PCT/EP2012/068766 patent/WO2013045393A1/fr active Application Filing
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Also Published As
Publication number | Publication date |
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KR20140067079A (ko) | 2014-06-03 |
WO2013045393A1 (fr) | 2013-04-04 |
US20140234602A1 (en) | 2014-08-21 |
CN103958734A (zh) | 2014-07-30 |
FR2980394B1 (fr) | 2013-10-18 |
FR2980394A1 (fr) | 2013-03-29 |
EP2761055A1 (fr) | 2014-08-06 |
EP2761055B1 (fr) | 2016-10-05 |
BR112014007133A2 (pt) | 2017-04-11 |
JP2014528857A (ja) | 2014-10-30 |
US9771654B2 (en) | 2017-09-26 |
CN103958734B (zh) | 2016-12-21 |
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