JP6550198B1 - SiC膜構造体 - Google Patents
SiC膜構造体 Download PDFInfo
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- JP6550198B1 JP6550198B1 JP2019036720A JP2019036720A JP6550198B1 JP 6550198 B1 JP6550198 B1 JP 6550198B1 JP 2019036720 A JP2019036720 A JP 2019036720A JP 2019036720 A JP2019036720 A JP 2019036720A JP 6550198 B1 JP6550198 B1 JP 6550198B1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D1/00—Containers having bodies formed in one piece, e.g. by casting metallic material, by moulding plastics, by blowing vitreous material, by throwing ceramic material, by moulding pulped fibrous material, by deep-drawing operations performed on sheet material
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D43/00—Lids or covers for rigid or semi-rigid containers
- B65D43/02—Removable lids or covers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67366—Closed carriers characterised by materials, roughness, coatings or the like
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
Abstract
Description
そこで本発明では、上記問題を解決し、封止構造とすることのできるSiC膜構造体を提供することを目的とする。
本実施形態に係るSiC膜構造体10は、図1に示すように、本体12と蓋体14、およびSiCコート層16を基本として構成されている。本体12は、立体形状を成す中空部材であり、少なくとも一部に開口部12aを備えている。開口部12aは、中空部12bに連通するように設けられている。なお、本体12は、SiC(炭化ケイ素)膜により構成されている。
次に、図2を参照して、本実施形態に係るSiC膜構造体10の製造方法について説明する。まず、図2(A)に示すように、立体形状を有する基材50を形成する。基材50の形状については特に限定するものではない。なお、図2(A)に示す例では、説明を容易化するために直方体型として示している。基材50の構成部材としては、グラファイトやシリコン等、加熱や薬品により、比較的容易に除去することのできる材質とすることが望ましい。本実施形態においては、基材50の構成部材として、グラファイトを採用することとしている。高温酸化雰囲気中における加熱により、焼失させることが可能だからである。なお、基材50には、少なくとも一部に、開口部12aを構成するためのマスキング52を施すようにする。
上記実施形態では、本体12の開口部12aを蓋体14により封止する際、SiCコート層16は、蓋体14の全体を覆うように形成していた。しかしながら、SiCコート層16は、本体12と蓋体14の外縁部との接触箇所を覆う構成とすれば良い。すなわち、図3に示すように、蓋体14の中心付近にはSiCコート層16を設けることなく、外周上にSiCコート層16を配するようにしても良い。このような構成とした場合でも、本体12の開口部12aを封止する構成に変わりないからである。
Claims (3)
- 気相成長型の成膜法により基材の外周にSiC膜を形成し、前記基材を除去することでSiC膜による立体形状を得るSiC膜構造体であって、
SiC膜により構成された立体形状を有すると共に、前記基材を除去するための開口部を備えた本体と、
前記開口部を覆う蓋体と、
少なくとも前記本体と前記蓋体の外縁部との接触箇所を覆って両者を接合しているSiCコート層と、を備えたことを特徴とするSiC膜構造体。 - 前記蓋体をSiC膜により構成したことを特徴とする請求項1に記載のSiC膜構造体。
- 前記蓋体は、前記開口部に嵌合するボス部と、前記ボス部の外周に張り出して前記開口部を覆うフランジ部とを有することを特徴とする請求項1または2に記載のSiC膜構造体。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019036720A JP6550198B1 (ja) | 2019-02-28 | 2019-02-28 | SiC膜構造体 |
TW108130219A TWI701718B (zh) | 2019-02-28 | 2019-08-23 | SiC膜構造體 |
TW108142781A TWI720700B (zh) | 2019-02-28 | 2019-08-23 | SiC膜構造體及SiC膜構造體的製造方法 |
CN201911344813.1A CN111627846B (zh) | 2019-02-28 | 2019-08-28 | SiC膜构造体及SiC膜构造体的制造方法 |
CN201980001810.XA CN111868884A (zh) | 2019-02-28 | 2019-08-28 | SiC膜构造体 |
PCT/JP2019/033684 WO2020174725A1 (ja) | 2019-02-28 | 2019-08-28 | SiC膜構造体 |
KR1020197030153A KR102066382B1 (ko) | 2019-02-28 | 2019-08-28 | SiC막 구조체 |
US16/498,249 US11508570B2 (en) | 2019-02-28 | 2019-08-28 | SiC film structure |
KR1020197034407A KR102124737B1 (ko) | 2019-02-28 | 2019-08-28 | SiC막 구조체 및 SiC막 구조체의 제조 방법 |
US16/664,013 US10804096B2 (en) | 2019-02-28 | 2019-10-25 | SiC film structure and method for manufacturing SiC film structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2019036720A JP6550198B1 (ja) | 2019-02-28 | 2019-02-28 | SiC膜構造体 |
Related Child Applications (1)
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JP2019120825A Division JP6590234B1 (ja) | 2019-06-28 | 2019-06-28 | SiC膜構造体およびSiC膜構造体の製造方法 |
Publications (2)
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JP6550198B1 true JP6550198B1 (ja) | 2019-07-24 |
JP2020139207A JP2020139207A (ja) | 2020-09-03 |
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JP2019036720A Active JP6550198B1 (ja) | 2019-02-28 | 2019-02-28 | SiC膜構造体 |
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US (2) | US11508570B2 (ja) |
JP (1) | JP6550198B1 (ja) |
KR (2) | KR102124737B1 (ja) |
CN (2) | CN111868884A (ja) |
TW (2) | TWI720700B (ja) |
WO (1) | WO2020174725A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022202364A1 (ja) * | 2021-03-23 | 2022-09-29 | 東京エレクトロン株式会社 | 半導体製造装置及び半導体製造装置用の部品 |
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US11476128B2 (en) * | 2020-08-25 | 2022-10-18 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
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JPS4735638Y1 (ja) | 1967-08-25 | 1972-10-28 | ||
US3734705A (en) | 1971-04-09 | 1973-05-22 | Owens Illinois Inc | Method and apparatus for producing and packaging sealed tubular glass bodies |
JPS577923A (en) * | 1980-06-18 | 1982-01-16 | Toshiba Ceramics Co Ltd | Manufacture of receiving table for processing single silicon crystal wafer |
US4400232A (en) * | 1981-11-09 | 1983-08-23 | Eagle-Picher Industries, Inc. | Control of oxygen- and carbon-related crystal defects in silicon processing |
JPH043568A (ja) | 1990-04-19 | 1992-01-08 | Nec Corp | 課金方式 |
JP2701615B2 (ja) * | 1991-09-27 | 1998-01-21 | 三井造船株式会社 | 半導体拡散炉用ウェハボートの製造方法 |
JP3250628B2 (ja) * | 1992-12-17 | 2002-01-28 | 東芝セラミックス株式会社 | 縦型半導体熱処理用治具 |
US5584936A (en) * | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
JP3648112B2 (ja) | 1999-11-26 | 2005-05-18 | 東芝セラミックス株式会社 | CVD−SiC自立膜構造体、及びその製造方法 |
JP2002289537A (ja) * | 2001-03-27 | 2002-10-04 | Mitsui Eng & Shipbuild Co Ltd | CVD―SiC中空体縦型ウェハボート |
CN101001978B (zh) | 2004-07-22 | 2010-10-13 | 东洋炭素株式会社 | 衬托器 |
JP2006077302A (ja) * | 2004-09-10 | 2006-03-23 | Asahi Glass Co Ltd | 炭化ケイ素部材の製造法 |
US20100032857A1 (en) | 2005-02-28 | 2010-02-11 | Saint-Gobain Ceramics & Plastics, Inc. | Ceramic components, coated structures and methods for making same |
JP5192137B2 (ja) * | 2006-07-31 | 2013-05-08 | 三井造船株式会社 | ウエハボート |
JP4894717B2 (ja) * | 2007-10-23 | 2012-03-14 | 株式会社デンソー | 炭化珪素単結晶基板の製造方法 |
JP4877204B2 (ja) * | 2007-11-13 | 2012-02-15 | 株式会社デンソー | 炭化珪素単結晶の製造装置 |
CN103732393B (zh) * | 2011-07-28 | 2016-10-05 | 凸版印刷株式会社 | 层叠体、阻气膜、层叠体的制造方法及层叠体制造装置 |
JP7139198B2 (ja) * | 2018-08-30 | 2022-09-20 | アズビル株式会社 | 紫外線センサ |
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- 2019-08-23 TW TW108130219A patent/TWI701718B/zh active
- 2019-08-28 CN CN201980001810.XA patent/CN111868884A/zh active Pending
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Cited By (2)
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WO2022202364A1 (ja) * | 2021-03-23 | 2022-09-29 | 東京エレクトロン株式会社 | 半導体製造装置及び半導体製造装置用の部品 |
KR20230159467A (ko) | 2021-03-23 | 2023-11-21 | 도쿄엘렉트론가부시키가이샤 | 반도체 제조 장치 및 반도체 제조 장치용의 부품 |
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KR102124737B1 (ko) | 2020-06-18 |
US20200279732A1 (en) | 2020-09-03 |
CN111627846B (zh) | 2023-05-23 |
US20210005491A1 (en) | 2021-01-07 |
TW202034386A (zh) | 2020-09-16 |
TW202034387A (zh) | 2020-09-16 |
US11508570B2 (en) | 2022-11-22 |
JP2020139207A (ja) | 2020-09-03 |
US10804096B2 (en) | 2020-10-13 |
WO2020174725A1 (ja) | 2020-09-03 |
CN111868884A (zh) | 2020-10-30 |
CN111627846A (zh) | 2020-09-04 |
TWI720700B (zh) | 2021-03-01 |
TWI701718B (zh) | 2020-08-11 |
KR102066382B1 (ko) | 2020-01-14 |
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