CN111627846A - SiC膜构造体及SiC膜构造体的制造方法 - Google Patents

SiC膜构造体及SiC膜构造体的制造方法 Download PDF

Info

Publication number
CN111627846A
CN111627846A CN201911344813.1A CN201911344813A CN111627846A CN 111627846 A CN111627846 A CN 111627846A CN 201911344813 A CN201911344813 A CN 201911344813A CN 111627846 A CN111627846 A CN 111627846A
Authority
CN
China
Prior art keywords
sic film
film structure
base material
sic
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201911344813.1A
Other languages
English (en)
Other versions
CN111627846B (zh
Inventor
川本聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferrotec Material Technologies Corp
Original Assignee
Admap Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Admap Inc filed Critical Admap Inc
Priority to CN201911344813.1A priority Critical patent/CN111627846B/zh
Publication of CN111627846A publication Critical patent/CN111627846A/zh
Application granted granted Critical
Publication of CN111627846B publication Critical patent/CN111627846B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D1/00—Containers having bodies formed in one piece, e.g. by casting metallic material, by moulding plastics, by blowing vitreous material, by throwing ceramic material, by moulding pulped fibrous material, by deep-drawing operations performed on sheet material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D43/00—Lids or covers for rigid or semi-rigid containers
    • B65D43/02—Removable lids or covers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67366—Closed carriers characterised by materials, roughness, coatings or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

提供一种能够采用封闭构造的SiC膜构造体及SiC膜构造体的制造方法。SiC膜构造体(10)通过气相沉积型的成膜法向基材(50)的外周形成SiC膜，并通过去除基材(50)而得到由SiC膜确定的立体形状，其特征在于，具有：本体(12)，其具有由SiC膜构成的立体形状，并且具有用于去除基材(50)的开口部(12a)；盖体(14)，其覆盖开口部(12a)。

Description

SiC膜构造体及SiC膜构造体的制造方法
本申请是申请日为2019年08月28日、名称为“SiC膜构造体”、申请号为201980001810.X的发明专利申请的分案申请。
技术领域
本发明涉及SiC成膜技术，特别涉及一种由SiC膜构成的立体的构造体及其制造方法。
背景技术
由于耐环境性好，化学稳定性高，特别是在半导体元件制造领域，作为制造半导体时的晶舟、管以及假片这些在超高温下使用的夹具或产品，对通过由SiC所构成的膜单体构成的构造体的需要日趋提高。
这种由SiC膜构成的构造体(以下称为SiC膜构造体)不仅能够制造成平面形，还能够制造成立体形状。作为其具体制造方法，例如公知专利文献1中公开的方法。专利文献1中公开的SiC膜构造体的制造方法首先制作出由碳(石墨)等构成的基材。接着，经由CVD(chemicalvapor deposition：化学气相沉积)法向基材的表面形成SiC膜。
接着，通过在高温氧化环境中对成膜后的坯料进行加热来烧掉基材。通过利用这样的处理进行基材去除，从而即使是具有难以通过机械加工将基材去除的复杂立体形状的构造体，也能够进行基材去除，能够得到SiC膜构造体。
现有技术文献
专利文献
专利文献1：日本特开2001-158666号公报
发明内容
发明所要解决的技术问题
在以上述方式形成的SiC膜构造体中，具有立体形状的SiC膜构造体需要向基材表面上局部地或者全面地形成SiC膜并去除基材。但是，要想去除基材，就要设置使基材的一部分露出的氧化孔，SiC膜构造体不能采用完全的封闭构造。
在作为产品而构成的SiC膜构造体上，如果留下这样的氧化孔，药液等的水分就会在清洗等时进入其内部，往往会产生难以干燥的部位。
因此，本发明的目的在于解决上述问题，提供一种能够采用封闭构造的SiC膜构造体以及起到该效果的SiC膜构造体的制造方法。
用于解决技术问题的手段
用于实现上述目的的本发明的SiC膜构造体通过气相沉积型的成膜法向基材的外周形成SiC膜，并通过去除所述基材而得到由SiC膜确定的立体形状，其特征在于，具有：本体，其具有由SiC膜构成的立体形状，并且具有为了去除所述基材而使基材的一部分露出的开口部；盖体，其用于覆盖所述开口部，使所述SiC膜构造体为密闭的封闭构造。
另外，在具有上述特征的SiC膜构造体中，优选所述盖体由SiC膜构成。通过具有这样的特征，能够利用SiC单体构成SiC膜构造体。另外，由于能够使本体和盖体的热膨胀系数一致，因此不存在伴随着温度变化而产生变形的隐患。
而且，在具有上述特征的SiC膜构造体中，所述盖体可以具有向所述开口部中嵌合的凸台部和向所述凸台部的外周伸出而覆盖所述开口部的凸缘部。通过具有这样的特征，即使构造体为微小的构造体，也能够容易地进行盖体的定位以及开口部的封闭。
另外，用于实现上述目的的本发明的SiC膜构造体的制造方法是通过气相沉积型的成膜法向基材的外周形成SiC膜，并通过去除所述基材而得到由SiC膜确定的立体形状的SiC膜构造体的制造方法，其特征在于，包含：膜形成工序，以使所述基材的一部分露出的状态，在该基材的外周形成SiC膜；基材去除工序，在所述膜形成工序之后去除所述基材；封闭工序，利用盖体将去除了基材的所述SiC膜的开口部封闭，使所述SiC膜构造体为密闭的封闭构造。
另外，在具有上述特征的SiC膜构造体的制造方法中，在所述封闭工序中，可以包含利用新的SiC膜覆盖所述盖体与所述SiC膜的接触部位的工序。通过具有这样的特征，能够利用SiC单体构成SiC膜构造体。另外，由于能够使由去除基材后的SiC膜构成的本体和盖体的热膨胀系数一致，因此不存在伴随着温度变化而产生变形的隐患。
而且，在具有上述特征的SiC膜构造体的制造方法中，可以以向所述SiC膜与所述盖体之间夹设通过加热而烧掉的间隔物的状态进行所述封闭工序。通过具有这样的特征，由于在由SiC膜构成的本体与盖体之间构成间隙，因此能够将内部气体脱气或者置换成惰性气体等。另外，即使在炉内实施封闭工序的情况下，也可通过实施封闭工序时的加热而烧掉间隔物，使得开口部密闭。
发明效果
根据具有上述特征的SiC膜构造体，能够设为不在具有立体形状的本体上留下开口部的封闭构造。另外，根据具有上述特征的SiC膜构造体的制造方法，能够使制造出的SiC膜构造体为封闭构造。
附图说明
图1是表示实施方式的SiC膜构造体的结构的图。
图2的(A)-(F)是用于说明实施方式的SiC膜构造体的制造方法的图。
图3是表示在构成SiC膜构造体方面的第一变形例的图。
图4是表示在构成SiC膜构造体方面的第二变形例的图。
具体实施方式
以下，参照附图对本发明的SiC膜构造体及SiC膜构造体的制造方法的实施方式详细进行说明。注意，以下所示的实施方式是在实施本发明方面的优选方式中的一部分，在具有发明确定特征(原文：発明特定事項)的范围内，即使对一部分结构进行了变更，也能看作是本发明的一部分。
[结构]
如图1所示，本实施方式的SiC膜构造体10以本体12和盖体14以及SiC涂层16为基础构成。本体12是呈立体形状的中空部件，在其至少一部分具有开口部12a。开口部12a设为与中空部12b连通。注意，本体12由SiC(碳化硅)膜构成。
盖体14是用于将形成于本体12的开口部12a封闭的要素。在图1所示的例子中，盖体14由凸台部14a和凸缘部14b构成。凸台部14a是向形成于本体12的开口部12a中嵌合来进行定位的要素，凸缘部14b是在凸台部14a的一端部侧向凸台部14a的外周伸出而承担覆盖开口部12a的功能的要素。通过设置凸缘部14b，凸台部14a不会向本体12的内部脱落。因此，即使在凸台部14a与开口部12a之间的空隙稍大的情况下也无妨，不需要用于提高精度的加工等。
对于盖体14的构成部件是没有特别限制的，但优选使用对温度、药品等的耐性、即耐环境特性高的部件。注意，在本实施方式中，利用SiC构成盖体14。这是因为，通过采用这样的结构，能够将SiC膜构造体10设为SiC膜单体构造。通过利用与本体12相同的部件构成盖体14，即使在高温或低温环境下，也不会因热膨胀系数不同而产生变形等。
SiC涂层16是承担将本体12与盖体14接合的功能的要素。因此，SiC涂层16至少形成为覆盖本体12与盖体14的外缘部的接触部位。在图1所示的方式中，SiC涂层16形成为覆盖盖体14中的凸缘部14b的形成面，并且覆盖位于凸缘部14b的外周的本体12。
根据上述结构的SiC膜构造体10，其为具有由SiC膜构成的立体形状的构造体，同时又能采用完全密闭的封闭构造。由此，即使在对SiC膜构造体10进行清洗等的情况下，也不会发生药液等进入内部，导致难以清洗或干燥的事态。
[制造方法]
接着，参照图2的(A)-(D)对本实施方式的SiC膜构造体10的制造方法进行说明。首先，如图2的(A)所示，形成具有立体形状的基材50。对于基材50的形状是没有特别限制的。注意，在图2的(A)所示的例子中，为了容易说明，表示成了长方体形。作为基材50的构成部件，优选采用石墨或硅等比较容易通过加热或药品去除的材质。在本实施方式中，作为基材50的构成部件，采用了石墨。这是因为，通过在高温氧化环境中加热，能够将其烧掉。注意，在基材50上，对其至少一部分实施用于构成开口部12a的遮蔽52。
接着，如图2的(B)所示，通过气相沉积型的成膜法，将构成本体12的SiC膜成膜在基材50的表面上。注意，所谓气相沉积型的成膜法，例如可以采用基于CVD法的成膜法，但不局限于此，也可以是真空蒸镀型的PVD(PhysicalVapor Deposition：物理气相沉积)法、MBE(MolecularBeam Epitaxy：分子束外延)法等。SiC膜的膜厚没有特别限制，但需要具有如下程度的膜厚：在去除了基材50时，具有可独立够成为立体构造物的强度。
在向基材50的外周形成SiC膜后，如图2的(C)所示，去除遮蔽52而使基材50的一部分露出。之后，通过在高温氧化环境中对成膜后的基材50加热，去除基材50。在如本实施方式那样用石墨构成基材50的情况下，基材50作为二氧化碳而消失。
在去除基材50后，如图2的(D)所示，向形成于本体12的开口部12a配置盖体14。注意，盖体14可以通过与形成本体12的工序不同的工序，与其一前一后地制造，或者与其平行地制造。
在将盖体14配置于开口部12a后，如图2的(E)所示，以在盖体14的凸缘部14b的外周处稍微露出本体12的方式，对本体12的外周实施遮蔽54。在实施遮蔽54之后，以将位于遮蔽物的开口部的盖体和本体的露出部覆盖的方式将SiC成膜，形成SiC涂层。SiC涂层的形成工序可以与图2的(B)中的成膜工序相同。注意，图2的(D)到图2的(E)的工序能够在大气中实施，也可以在真空环境中实施。此外，也可以在炉内在将内部气体置换成惰性气体等之后，进行盖体14的封闭。注意，在无人环境中对本体12的内部气体进行脱气或置换的情况下，向开口部12a与盖体14之间夹设间隔物(未图示)等并进行作业即可。通过将间隔物的构成材料设为硅等可通过加热来烧掉的材料，从而在脱气、置换后，在成膜工序中，间隔物消失。因此，为了脱气或置换而形成的间隙将消失，开口部12a会被密闭。
在利用SiC涂层完成对本体12和盖体14的接合封闭后，如图2的(F)所示，去除遮蔽54，从而完成SiC膜构造体10。
[变形例]
在上述实施方式中，在利用盖体14封闭本体12的开口部12a时，SiC涂层16形成为覆盖整个盖体14。然而，SiC涂层16只要为覆盖本体12与盖体14的外缘部的接触部位的结构即可。即，如图3所示，在盖体14的外周上配置SiC涂层16，而在盖体14的中心附近不设置SiC涂层16。这是因为，即使在采用这种结构的情况下，也一样是将本体12的开口部12a封闭的结构。
另外，在上述实施方式中，说明了盖体14由凸台部14a和凸缘部14b构成，通过将凸台部14a向开口部12a中嵌合来实现盖体14的定位。然而，盖体14只要能够封闭本体12的开口部12a即可。因此，如图4所示，也可以利用平板构成盖体14。这是因为，只要能够覆盖开口部12a，就能够发挥作为盖体14的功能。
附图标记说明
10………SiC膜构造体
12………本体
12a………开口部
12b………中空部
14………盖体
14a………凸台部
14b………凸缘部
16………SiC涂层
50………基材
52………遮蔽
54………遮蔽

Claims (6)

1.一种SiC膜构造体，通过气相沉积型的成膜法向基材的外周形成SiC膜，并通过去除所述基材而得到由SiC膜确定的立体形状，其特征在于，具有：
本体，其具有由SiC膜构成的立体形状，并且具有为了去除所述基材而使基材的一部分露出的开口部；
盖体，其用于覆盖所述开口部，使所述SiC膜构造体为密闭的封闭构造。
2.如权利要求1所述的SiC膜构造体，其特征在于，
所述盖体由SiC膜构成。
3.如权利要求1或2所述的SiC膜构造体，其特征在于，
所述盖体具有向所述开口部中嵌合的凸台部和向所述凸台部的外周伸出而覆盖所述开口部的凸缘部。
4.一种SiC膜构造体的制造方法，是通过气相沉积型的成膜法向基材的外周形成SiC膜，并通过去除所述基材而得到由SiC膜确定的立体形状的SiC膜构造体的制造方法，其特征在于，包含：
膜形成工序，以使所述基材的一部分露出的状态，在该基材的外周形成SiC膜；
基材去除工序，在所述膜形成工序之后去除所述基材；
封闭工序，利用盖体将去除了基材的所述SiC膜的开口部封闭，使所述SiC膜构造体为密闭的封闭构造。
5.如权利要求4所述的SiC膜构造体的制造方法，其特征在于，
在所述封闭工序中，包含利用新的SiC膜覆盖所述盖体与所述SiC膜的接触部位的工序。
6.如权利要求5所述的SiC膜构造体的制造方法，其特征在于，
以向所述SiC膜与所述盖体之间夹设通过加热而烧掉的间隔物的状态进行所述封闭工序。
CN201911344813.1A 2019-02-28 2019-08-28 SiC膜构造体及SiC膜构造体的制造方法 Active CN111627846B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911344813.1A CN111627846B (zh) 2019-02-28 2019-08-28 SiC膜构造体及SiC膜构造体的制造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019036720A JP6550198B1 (ja) 2019-02-28 2019-02-28 ＳｉＣ膜構造体
JP2019-036720 2019-02-28
PCT/JP2019/033684 WO2020174725A1 (ja) 2019-02-28 2019-08-28 ＳｉＣ膜構造体
CN201911344813.1A CN111627846B (zh) 2019-02-28 2019-08-28 SiC膜构造体及SiC膜构造体的制造方法
CN201980001810.XA CN111868884A (zh) 2019-02-28 2019-08-28 SiC膜构造体

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980001810.XA Division CN111868884A (zh) 2019-02-28 2019-08-28 SiC膜构造体

Publications (2)

Publication Number Publication Date
CN111627846A true CN111627846A (zh) 2020-09-04
CN111627846B CN111627846B (zh) 2023-05-23

Family

ID=67390370

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201911344813.1A Active CN111627846B (zh) 2019-02-28 2019-08-28 SiC膜构造体及SiC膜构造体的制造方法
CN201980001810.XA Pending CN111868884A (zh) 2019-02-28 2019-08-28 SiC膜构造体

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201980001810.XA Pending CN111868884A (zh) 2019-02-28 2019-08-28 SiC膜构造体

Country Status (6)

Country Link
US (2) US11508570B2 (zh)
JP (1) JP6550198B1 (zh)
KR (2) KR102124737B1 (zh)
CN (2) CN111627846B (zh)
TW (2) TWI701718B (zh)
WO (1) WO2020174725A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11476128B2 (en) * 2020-08-25 2022-10-18 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
WO2022202364A1 (ja) * 2021-03-23 2022-09-29 東京エレクトロン株式会社 半導体製造装置及び半導体製造装置用の部品

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400232A (en) * 1981-11-09 1983-08-23 Eagle-Picher Industries, Inc. Control of oxygen- and carbon-related crystal defects in silicon processing
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
JP2006077302A (ja) * 2004-09-10 2006-03-23 Asahi Glass Co Ltd 炭化ケイ素部材の製造法
JP2009102196A (ja) * 2007-10-23 2009-05-14 Denso Corp 炭化珪素単結晶基板の製造方法
JP2009120419A (ja) * 2007-11-13 2009-06-04 Denso Corp 炭化珪素単結晶の製造装置
US20100032857A1 (en) * 2005-02-28 2010-02-11 Saint-Gobain Ceramics & Plastics, Inc. Ceramic components, coated structures and methods for making same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4735638Y1 (zh) 1967-08-25 1972-10-28
US3734705A (en) 1971-04-09 1973-05-22 Owens Illinois Inc Method and apparatus for producing and packaging sealed tubular glass bodies
JPS577923A (en) * 1980-06-18 1982-01-16 Toshiba Ceramics Co Ltd Manufacture of receiving table for processing single silicon crystal wafer
JPH043568A (ja) 1990-04-19 1992-01-08 Nec Corp 課金方式
JP2701615B2 (ja) * 1991-09-27 1998-01-21 三井造船株式会社 半導体拡散炉用ウェハボートの製造方法
JP3250628B2 (ja) * 1992-12-17 2002-01-28 東芝セラミックス株式会社 縦型半導体熱処理用治具
JP3648112B2 (ja) 1999-11-26 2005-05-18 東芝セラミックス株式会社 ＣＶＤ−ＳｉＣ自立膜構造体、及びその製造方法
JP2002289537A (ja) * 2001-03-27 2002-10-04 Mitsui Eng & Shipbuild Co Ltd ＣＶＤ―ＳｉＣ中空体縦型ウェハボート
US9612215B2 (en) 2004-07-22 2017-04-04 Toyo Tanso Co., Ltd. Susceptor
JP5192137B2 (ja) * 2006-07-31 2013-05-08 三井造船株式会社 ウエハボート
KR102081210B1 (ko) * 2011-07-28 2020-02-25 도판 인사츠 가부시키가이샤 적층체, 가스 배리어 필름, 적층체의 제조 방법 및 적층체 제조 장치
JP7139198B2 (ja) * 2018-08-30 2022-09-20 アズビル株式会社 紫外線センサ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400232A (en) * 1981-11-09 1983-08-23 Eagle-Picher Industries, Inc. Control of oxygen- and carbon-related crystal defects in silicon processing
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
JP2006077302A (ja) * 2004-09-10 2006-03-23 Asahi Glass Co Ltd 炭化ケイ素部材の製造法
US20100032857A1 (en) * 2005-02-28 2010-02-11 Saint-Gobain Ceramics & Plastics, Inc. Ceramic components, coated structures and methods for making same
JP2009102196A (ja) * 2007-10-23 2009-05-14 Denso Corp 炭化珪素単結晶基板の製造方法
JP2009120419A (ja) * 2007-11-13 2009-06-04 Denso Corp 炭化珪素単結晶の製造装置

Also Published As

Publication number Publication date
CN111868884A (zh) 2020-10-30
JP2020139207A (ja) 2020-09-03
US20210005491A1 (en) 2021-01-07
JP6550198B1 (ja) 2019-07-24
WO2020174725A1 (ja) 2020-09-03
CN111627846B (zh) 2023-05-23
TWI701718B (zh) 2020-08-11
TWI720700B (zh) 2021-03-01
TW202034386A (zh) 2020-09-16
KR102066382B1 (ko) 2020-01-14
US11508570B2 (en) 2022-11-22
US10804096B2 (en) 2020-10-13
TW202034387A (zh) 2020-09-16
US20200279732A1 (en) 2020-09-03
KR102124737B1 (ko) 2020-06-18

Similar Documents

Publication Publication Date Title
CN111627846A (zh) SiC膜构造体及SiC膜构造体的制造方法
FR2490403A1 (fr) Nouveau procede de fabrication de circuits integres
JP6590234B1 (ja) ＳｉＣ膜構造体およびＳｉＣ膜構造体の製造方法
JP3950628B2 (ja) 広範囲メンブランマスクを製造する方法
JPS5861641A (ja) 半導体装置の製造方法
JPS6315439A (ja) 選択酸化分離方法
CN111868885A (zh) SiC膜单体构造体
EP3503142B1 (fr) Réalisation d'un collecteur de dispositif microélectronique
WO2023017712A1 (ja) 窒化物半導体基板及びその製造方法
JPS62119924A (ja) 透過マスクの作製方法
JP3820449B2 (ja) 階段状多層薄膜の作製方法
WO2021133159A1 (en) A method of forming graphene nanomesh
JPS58200530A (ja) 半導体装置の製造方法
JPS6146043A (ja) 半導体装置の製造方法
JPS6193627A (ja) パタ−ンの形成方法
JP2000016870A (ja) 化学気相蒸着炭化ケイ素板状成形体およびその製造方法
JPS61270817A (ja) 半導体素子の製造方法
US20050233538A1 (en) Integrated dynamic memory cell and method for fabricating it
JPH06333836A (ja) 半導体結晶基板への微細構造体形成法
JPH03228310A (ja) Ｘ線露光用マスクおよびその製造方法
JPS60236246A (ja) 半導体装置の製造方法
JPH04177729A (ja) 半導体素子の製造方法
JPS6358940A (ja) 絶縁分離層の形成方法
JPS6237946A (ja) 半導体装置の製造方法
JPH03280428A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant