CN111868885A - SiC膜单体构造体 - Google Patents

SiC膜单体构造体 Download PDF

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CN111868885A
CN111868885A CN201980002150.7A CN201980002150A CN111868885A CN 111868885 A CN111868885 A CN 111868885A CN 201980002150 A CN201980002150 A CN 201980002150A CN 111868885 A CN111868885 A CN 111868885A
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functional surface
film
base material
monomer structure
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川本聪
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Ferrotec Material Technologies Corp
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Admap Inc
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Abstract

提供一种SiC膜单体构造体，SiC膜单体构造体的功能面不受膜厚的影响，且能够通过增加膜厚来实现强度的提高。其为通过气相沉积型的成膜法层积SiC层而构成的膜单体构造体，其特征在于，以SiC膜单体构造体(10)中的成为功能面(12)的第一SiC层(20)为基准层积SiC层。另外，在位于任意的特定部位的正反两面的功能面(12)和非功能面(14)中，功能面(12)的平滑度高于非功能面(14)的平滑度。

Description

SiC膜单体构造体
技术领域
本发明涉及SiC成膜技术，特别涉及一种由SiC膜单体构成的构造物。
背景技术
由于耐环境性好，化学稳定性高，特别是在半导体元件制造领域，作为制造半导体时的晶舟、管以及假片这些在超高温下使用的夹具，对由SiC构成的膜单体构造体的需要日趋提高。
以往，这种SiC膜单体构造体是通过专利文献1公开的那种成膜工序和基材去除工序来形成的。具体如下。首先，在成膜工序中，通过CVD(ChemicalVapor Deposition：化学气相沉积)法在由碳(石墨)等构成的基材的表面上形成SiC膜，通过成膜时间、成膜的层积次数等来控制其厚度。
接着，基材去除工序通过在高温氧化环境中对成膜后的坯料进行加热来烧掉基材。通过进行这样的处理，制作出具有与基材的外形一致的形状的SiC膜单体构造体。
现有技术文献
专利文献
专利文献1：日本特开2001-158666号公报
发明内容
发明所要解决的技术问题
在以上述方式形成的SiC膜单体构造体中，功能面是通过CVD法形成的气相沉积面。气相沉积出的膜的厚度根据基材的部位、配置基材的位置也会有所不同。因此，在基材具有凹凸的情况下，尤其需要预测气象沉积时的膜的附着情况、即完成后的SiC膜单体构造体的膜的状态来确定基材形状，所希望的形状与完成形状之间会产生偏差。另外，在使用具有复杂的表面形状的基材的情况下，在狭窄部分，深部的膜厚有变薄的倾向。这种产品精度和膜厚的分布差往往会根据产品用途而对其功能带来较大的影响。
而且，在狭窄部，存在因为膜厚增厚而不能得到所希望的间隙的风险，还存在难以通过增加膜厚来获得强度的提高的问题。
因此，本发明的目的在于解决上述问题，提供一种能够使SiC膜单体构造体的功能面的形状与基材形状高精度地一致且能够通过增加膜厚来实现强度的提高的SiC膜单体构造体。
用于解决技术问题的手段
用于实现上述目的的本发明的SiC膜单体构造体是一种通过气相沉积型的成膜法向具有凹凸的基材的凹凸面上层积SiC层而构成的膜单体构造体，其特征在于，对所述基材采用具有与所希望的构造体的形态相反的凹凸的阴模基材，所述SiC层在与所述阴模基材的凹凸面接触构成的第一SiC层中的与所述阴模基材接触的接触面上构成功能面。
另外，在具有上述特征的SiC膜单体构造体中，在位于任意的特定部位的正反两面的所述功能面和非功能面中，所述功能面的平滑度高于所述非功能面的平滑度。通过具有这样的特征，在形成SiC膜单体构造体后，不需要研磨等表面处理。因此，即使是复杂形状、微细形状的构造体，也能够提供高品质的产品。
而且，在具有上述特征的SiC膜单体构造体中，在形成面具有角部的情况下，与所述非功能面相比，所述功能面的所述角部的棱线更加锐利。通过具有这样的特征，能够切实地得到作为模具等所要求的精度。
发明效果
根据具有上述特征的SiC膜单体构造体，SiC膜单体构造体的功能面不受膜厚的影响。另外，由于功能面不受膜厚的影响，因此能够通过增加膜厚来谋求强度的提高。
附图说明
图1是表示实施方式的SiC膜单体构造体的结构的图。
图2是用于说明实施方式的SiC膜单体构造体的制造工序的图。
图3是表示在构成SiC膜单体构造体方面的变形例的图。
具体实施方式
以下，参照附图对本发明的SiC膜单体构造体的实施方式详细进行说明。注意，以下所示的实施方式是在实施本发明方面的优选方式中的一部分，在具有发明确定特征(原文：発明特定事項)的范围内，即使对一部分结构进行了变更，也能看作是本发明的一部分。
[结构]
在本实施方式中，通过使SiC膜具有可独立的强度来构成SiC膜单体构造体10。图1所示的形态是作为用于制造半导体晶片的夹具的晶舟，但它是要表示实施方式的SiC膜单体构造体10不仅能够应用于平面构造，还能够应用于具有凹凸的形态，并不限定形态和用途。
图1所示的SiC膜单体构造体10将具有作为晶舟的功能、即具有用于对晶片50进行支承的狭缝16的一个主面设为功能面12。如图1中用圆圈包围的局部放大的示意图所示，在实施方式的SiC膜单体构造体10的功能面12上，设有多个难以通过机械加工得到的微小突起12b。通过在功能面12上设置这样的微小突起12b，能够减小支承材料(例如晶片50)与SiC膜单体构造体10的接触面积。因此，在进行加热或冷却处理时，不会发生晶片50贴在SiC膜单体构造体10上的事态。另外，能够抑制在暴露于气体环境中的部分与接触部分之间产生温度差。
另外，关于角部12a、14a，功能面12的角部12a的棱线的角非常锐利，而非功能面14的对应部位(角部14a)则形成为，与功能面12的对应部位相比，棱线为较为平缓的状态。
这是因为，如后详述，SiC膜单体构造体10的功能面12与基材30(参照图2)接触构成，得到了与其裸面形状一致的形状。因此，能够使功能面12的形状与基材30的形状高精度地一致。
[制造工序]
参照图3，对本实施方式的这种结构的SiC膜单体构造体10的制造工序进行说明。首先，如图2(A)所示，制作具有与所希望的构造体的形态相反的凹凸的基材30、即阴模基材30。可以将在表面也形成有微小气孔的多孔质部件、例如石墨等作为构成材料来制作基材30。注意，对基材30的下端侧实施遮蔽32，设为能够设置于基准面的状态。
接着，如图2(B)所示，通过气相沉积型的成膜法，向基材30的表面上构成第一SiC层20。注意，所谓气相沉积型的成膜法，可以是例如基于CVD法的成膜法。在此，在构成基材30的石墨的表面上，存在无数的气孔。通过CVD法形成的第一SiC层20在存在于基材30的表面的气孔内也会形成。如此形成在气孔内的第一SiC层20构成设于功能面12上的微小突起12b。
在第一SiC层20成膜后，如图2(C)所示，以第一SiC层20为基准进行层积，对层积型SiC层22进行成膜。在此，第一SiC层20与层积于其上的层积型SiC层22之间不必设置结构上的差异，但第一SiC层20形成于基材30的表面。因此，第一SiC层20对基材30裸面的性状以及形状得到了精度高的形状。
在层积型SiC层22达到了可获得所希望的强度的厚度之后，如图2(D)所示，将形成有SiC层(第一SiC层20和层积型SiC层22)的基材30从基准面上取下，将不需要的部分(图2(D)中虚线部以上的部分)切断去除。如图2(E)所示，在去除了不需要的部分之后，将基材30去除。在采用石墨作为基材30的情况下，基材30的去除可以是将形成有SiC层的基材30整个放在高温氧化环境中进行加热的方法。
在高温氧化环境中经过加热的石墨作为CO2而变为气体，被烧掉。因此，即使是难以通过机械加工去除的复杂形状、微细形状，也能够将基材30去除。
通过以上述方式将基材30去除，如图2(F)所示，形成SiC膜单体构造体10。
[效果]
这样，实施方式的SiC膜单体构造体10是通过以构成功能面12的第一SiC层20为基准，依次层积层积型SiC层22而构成的。因此，SiC膜单体构造体10的功能面12与基材30的形状高精度地一致。另外，由于形状精度不受膜厚的影响，因此SiC膜单体构造体10还能够通过增加膜厚来谋求强度的提高。
[变形例]
如上所述，在本实施方式的SiC膜单体构造体10中，功能面12不受膜厚的影响。因此，如图3所示，即便使由SiC构成的膜的厚度增厚，从而使形成于非功能面14的槽的宽度变窄，功能面12也能够保持所希望的精度。因此，能够提供这样一种SiC膜单体构造体10：即使在配置或者保持重物的情况下，其工作精度也高。
另外，在采用裸面性状平滑的金属等作为基材30的情况下，通过对其实施使表面出现微小凹凸的表面处理(作为一个例子，可列举出喷砂)，能够构成与上述实施方式相同的具有微小突起的功能面12。注意，在采用金属作为基材30的情况下，可以通过利用药液溶解基材30来进行基材30的去除。
工业实用性
在上述实施方式中，作为气相沉积型的成膜法，列举CVD法进行了说明。与真空蒸镀型的PVD(PhysicalVapor Deposition：物理气相沉积)法、MBE(MolecularBeam Epitaxy：分子束外延)法相比，基于CVD法的气相沉积能够实现膜厚的均一化。因此，作为利用最终的层积面构成功能面的以往的SiC膜单体构造体的制造方法，它曾经是有效手段。但是，实施方式的SiC膜单体构造体10是通过以构成功能面12的第一SiC层20为基准，层积形成层积型SiC层22而构成的。因此，即使应用基于PVD法或MBE法这些真空蒸镀型的成膜法的成膜技术，也能够制造出精度高的产品。
另外，在上述实施方式中，作为SiC膜单体构造体10的一个例子，以晶舟为例进行了说明。然而，作为SiC膜单体构造体10的形态，能够应对晶片支架和基座等承担各种用途的形态。
附图标记说明
10………SiC膜单体构造体
12………功能面
12a………角部
12b………微小突起
14………非功能面
14a………角部
16………狭缝
20………第一SiC层
22………层积型SiC层
30………基材
32………遮蔽
50………晶片

Claims (4)

1.一种SiC膜单体构造，是通过气相沉积型的成膜法向具有凹凸的基材的凹凸面上层积SiC层而构成的膜单体构造体，其特征在于，
对所述基材采用具有与所希望的构造体的形态相反的凹凸的阴模基材，
所述SiC层在与所述阴模基材的凹凸面接触构成的第一SiC层中的与所述阴模基材接触的接触面上构成功能面。
2.如权利要求1所述的SiC膜单体构造，其特征在于，
在所述第一SiC层的与所述功能面相反的一侧，层积有构成非功能面的SiC层。
3.如权利要求2所述的SiC膜单体构造，其特征在于，
在形成面具有角部的情况下，与所述非功能面相比，所述功能面的所述角部的棱线更加锐利。
4.如权利要求1至3中任一项所述的SiC膜单体构造，其特征在于，
在所述功能面，具有因所述基材的材料特性而形成的突起。
CN201980002150.7A 2019-02-28 2019-08-28 SiC膜单体构造体 Pending CN111868885A (zh)

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