TW202033809A - SiC膜單體構造體 - Google Patents

SiC膜單體構造體 Download PDF

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TW202033809A
TW202033809A TW108130220A TW108130220A TW202033809A TW 202033809 A TW202033809 A TW 202033809A TW 108130220 A TW108130220 A TW 108130220A TW 108130220 A TW108130220 A TW 108130220A TW 202033809 A TW202033809 A TW 202033809A
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川本聡
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Abstract

本發明的課題係在於提供SiC膜單體構造體的功能面不會受到膜厚的影響，且能夠圖謀增加膜厚提升強度的SiC膜單體構造體。 本發明的解決手段係一種SiC膜單體構造體，其特徵在於：其係以氣相沉積型的成膜法層積SiC層而構成的膜單體構造體，SiC層，係以成為SiC膜單體構造體10的功能面12的第1SiC層20作為基準層積。此外，在位於任意特定部位的正反的功能面12與非功能面14，構成為功能面12的平滑度較非功能面14的平滑度高。

Description

SiC膜單體構造體
本發明係關於SiC成膜技術，特別是以SiC膜單體構成的構造物。
由於耐環境性優良，化學穩定性高，特別是在半導體元件製造的領域，作為在半導體製造時的晶圓舟、管、及檔片等利用在超高溫下的治具，藉由SiC構成的膜單體構造體的需要提高。
先前，如此的SiC膜單體構造體，係以如專利文獻1所揭示的成膜步驟及基材去除步驟形成。具體係如下所示。首先，在成膜步驟，係在碳(石墨)等所構成的基材表面上，藉由CVD(Chemical Vapor Deposition︰化學氣相沉積)法形成SiC膜，藉由成膜時間、成膜層積次數等，控制其厚度。
接著，基材去除步驟，係藉由將成膜的材料在高溫氧化氣氛中加熱，將基材燒除。藉由進行如此的處理，完成具有沿著基材的外形形狀的SiC膜單體構造體。 ［先前技術文獻］ ［專利文獻］
［專利文獻1］日本特開2001-158666號公報
［發明所欲解決的課題］
如上所述形成的SiC膜單體構造體，功能面係以CVD法的氣相沉積面。以氣相沉積的膜的厚度，會根據基材的部位、基材的配置位置不同而不同。因此，基材有凹凸時，特別是需要預測，膜在氣相沉積時的積法，即完成後的SiC膜單體構造體膜的狀態，決定基材形狀，在所期望的形狀與完成形狀之間會發生偏差。此外，使用具有複雜的表面形狀的基材時，在狹窄部分，深部的膜厚有變薄的傾向。如此的產品精度或膜厚的分佈差，因產品用途有時大大地影響其功能。
再者，在狹窄部，有因將膜厚變厚而無法得到所期望的間隙之虞，亦有難以藉由增加膜厚提升強度等問題。
因此在本發明，為解決上述問題，以提供能夠使在於SiC膜單體構造體的功能面的形狀精度良好地配合基材形狀，同時能夠圖謀藉由增加膜厚提升強度的SiC膜單體構造體為目標。 ［用於解決課題的手段］
關於為達成上述目標的本發明的SiC膜單體構造體，其特徵在於：其係以氣相沉積型的成膜法在具有凹凸的基材的凹凸面層積SiC層而構成的膜單體構造體，在上述基材採用具有與所期望的構造體的形態相反的凹凸母型基材，上述SiC層係在接於上述母型基材的凹凸面所構成的第1SiC層的與上述母型基材的接觸面構成功能面。
此外，具有如上所述特徵的SiC膜單體構造體，在位於任意特定部位的正反的上述功能面與非功能面，構成為上述功能面的平滑度較上述非功能面的平滑度高。藉由具有如此的特徵，在形成SiC膜單體構造體之後，變得無需研磨等表面處理。因此，即使是複雜形狀、細微形狀的構造體，亦可提供高品質的產品。
再者，具有如上所述特徵的SiC膜單體構造體，在形成面具有角部時，與上述非功能面相比，上述功能面的上述角部的棱線較銳利。變藉由具有如此的特徵，能夠確實得到作為治具所要求的精度。 ［發明的效果］
根據具有如上所述特徵的SiC膜單體構造體，SiC膜單體構造體的功能面並不會受到膜厚的影響。此外，藉由功能面不會受到膜厚的影響，能夠圖謀藉由增加膜厚提升強度。
以下，將關於本發明的SiC膜單體構造體的實施形態，參照圖面詳細說明。再者，以下所示實施形態，係在實施本發明上較適形態的一部分，在具備發明特定事項的範圍，即使變更構成的一部分，亦可視為本發明的一部分。
[構成] 在本實施形態，藉由使SiC膜具有可自立的強度而構成SiC膜單體構造體10。圖1所示形態，係使用於作為半導體晶圓製造的治具的舟，惟此係表示關於實施形態的SiC膜單體構造體10，不只是平面構造，亦可適用於具有凹凸的形態，而並非限定形態或用途。
圖1所示SiC膜單體構造體10，係將作為舟的功能，即以具備用於支持晶圓50的凹槽16的一方的主面作為功能面12。在圖1中，以圓圈的部分放大的示意圖所示，關於實施形態的SiC膜單體構造體10的功能面12，設有難以機械加工而得的複數微小突起12b。藉由在功能面12具有如此的微小突起12b，能夠減少支持材料(例如晶圓50)與SiC膜單體構造體10的接觸面積。因此，進行加熱或冷卻處理時，並不會發生晶圓50黏貼在SiC膜單體構造體10的情形。此外，能夠抑制曝於氣體氣氛中的部分與接觸部分的發生溫度差。
此外，關於角部12a、14a，相較於在功能面12的角部12a的棱線較銳利，在非功能面14的對應處(角部14a)，與功能面12的對應處相比，形成為棱線較平穩的狀態。
此係如後所詳述，SiC膜單體構造體10的功能面12，以接於基材30(參照圖2)而構成，得到沿著其表面形狀的形狀。因此，能把功能面12的形狀精度好地配合基材30的形狀。
[製造步驟] 參照圖2說明關於如此構成的本實施形態的SiC膜單體構造體10的製造步驟。首先，如圖2(A)所示，製作具有與所期望的構造體的形態相反的凹凸的基材30，即母型基材30。基材30，以在表面上會形成微小氣孔多孔質構件，例如石墨等作為構成材料製作即可。再者，在基材30的下端側，施以遮罩32，作成能夠設置在基準面的狀態。
接著，如圖2(B)所示，藉由氣相沉積型的成膜法，在基材30表面構成第1SiC層20。再者，所謂氣相沉積型的成膜法，例如作為CVD法即可。在此，在構成基材30的石墨表面，存在無數的氣孔。以CVD法形成的第1SiC層20，亦會形成在存在於基材30表面的氣孔內。如此形成在氣孔內的第1SiC層20，將構成設在功能面12上的微小突起12b。
將第1SiC層20成膜之後，如圖2(C)所示，將第1SiC層20作為基準層積，進行層積型SiC層22的成膜。在此，第1SiC層20，層積於此的層積型SiC層22之間，在構成上無需設置差異，惟第1SiC層20係形成在基材30的表面。因此，第1SiC層20，在基材30表面性狀，及形狀上，會得到高精度的形狀。
層積型SiC層22得到所期望強度的厚度之後，如圖2(D)所示，將形成SiC層(第1SiC層20及層積型SiC層22)的基材30從基準面取下，將不需要的部分(圖2(D)中比虛線部上面的部分)切斷去除。如圖2(E)所示，去除不需要的部分之後，去除基材30。作為基材30採用石墨時，基材30的去除，可將整個成膜SiC層的基材30在高溫氧化氣氛進行加熱的方法進行。
在高溫氧化氣氛中加熱的石墨，作為CO2 變成氣體，燒除。因此即使是難以機械加工去除的複雜形狀、微細形狀，亦可進行基材30的去除。 藉由如上所述地進行基材30的去除，形成如圖2(F)所示，SiC膜單體構造體10。
[效果] 如此，關於實施形態的SiC膜單體構造體10，係以構成功能面12的第1SiC層20作為基準，依序層積層積型SiC層22而構成。因此，SiC膜單體構造體10的功能面12，能夠精度良好地沿著基材30的形狀。此外，由於形狀精度不會受到膜厚的影響，故SiC膜單體構造體10，亦能夠圖謀藉由增加膜厚提升強度。
[變形例] 如上所述，關於本實施形態的SiC膜單體構造體10，功能面12不會受到膜厚的影響。因此，如圖3所示，藉由將以SiC構成的膜的厚度變厚，即使形成在非功能面1４的溝的寬度被縮小，功能面12亦可保持所期望的精度。因此，即使是配置重量物，或保持時，亦可提供工作精度高的SiC膜單體構造體10。
此外，作為基材30，採用表面性狀為平滑的金屬等時，可藉由在表面施以形成微小凹凸的表面處理(作為一個例子，能夠舉出噴砂)，構成與上述實施形態同樣的微小突起的功能面12。再者，作為基材30採用金屬時，藉由藥液將基材30溶化進行基材30的去除即可。 ［產業上的可利性］
在上述實施形態，作為氣相沉積型的成膜法，舉出CVD說明。以CVD法的氣相沉積，較真空蒸鍍型的PVD(Physical VaporDeposition︰物理氣相沉積)法、或MBE(Molecular Beam Epitaxy︰分子束磊晶)法，能夠圖謀膜厚的均等化。因此，將功能面以最終的層積面構成的先前的SiC膜單體構造體的製造方法是有效的手段。但是，關於實施形態的SiC膜單體構造體10，係將構成功能面12的第1SiC層20作為基準，層積形成層積型SiC層22而構成。因此，即使適用真空蒸鍍型的成膜法的PVD或MBE法的成膜技術，亦可製造精度高的產品。
此外，在上述實施形態，作為SiC膜單體構造體10的一個例子，舉舟為例說明。但是，作為SiC膜單體構造體10的形態，亦可擔任對應晶圓支架或晶舟等各種用途的形態。
10:SiC膜單體構造體 12:功能面 12a:角部 12b:微小突起 14:非功能面 14a:角部 16:凹槽 20:第1SiC層 22:層積型SiC層 30:基材 32:遮罩 50:晶圓
［圖1］係表示關於實施形態的SiC膜單體構造體的構成圖。 ［圖2］係用於說明關於實施形態的SiC膜單體構造體的製造步驟的圖。 ［圖3］係表示在構成SiC膜單體構造體的變形例的圖。
10:SiC膜單體構造體
12:功能面
12a:角部
12b:微小突起
14:非功能面
14a:角部
16:凹槽
50:晶圓

Claims (4)

  1. 一種SiC膜單體構造體，其特徵在於：其係以氣相沉積型的成膜法在具有凹凸的基材的凹凸面層積SiC層而構成的膜單體構造體， 在上述基材採用具有與所期望的構造體的形態相反的凹凸的母型基材， 上述SiC層係在接於上述母型基材的凹凸面所構成的第1SiC層的與上述母型基材的接觸面構成功能面。
  2. 如申請專利範圍第1項所述之SiC膜單體構造體，其中在與上述第1SiC層的上述功能面的相反側，層積構成非功能面的SiC層。
  3. 如申請專利範圍第2項所述之SiC膜單體構造體，其中在形成面具有角部時，與上述非功能面相比上述功能面的角部的棱線較銳利。
  4. 如申請專利範圍第1至3項之任何一項所述之SiC膜單體構造體，其中上述功能面具備起因於上述基材的材料特性的突起。
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