JP2020141073A - SiC膜単体構造体 - Google Patents
SiC膜単体構造体 Download PDFInfo
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/6733—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like
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- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
- H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
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- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
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Abstract
【解決手段】気相成長型の成膜法によりSiC層を積層して構成された膜単体構造体であって、SiC層は、SiC膜単体構造体10における機能面12となる第1SiC層20を基準として積層されていることを特徴とする。また、任意の特定部位の表裏に位置する機能面12と非機能面14において、機能面12の平滑度が非機能面14の平滑度よりも高くなるように構成している。
【選択図】図1
Description
本実施形態では、SiC膜に自立可能な強度を持たせることでSiC膜単体構造体10を構成している。図1に示す形態は、半導体ウェハ製造に用いられる治具としてのボートであるが、これは、実施形態に係るSiC膜単体構造体10が平面構造だけでなく、凹凸を有する形態にも適用可能であることを示すものであり、形態や用途を限定するものではない。
このような構成の本実施形態に係るSiC膜単体構造体10の製造工程について、図2を参照して説明する。まず、図2(A)に示すように、所望する構造体の形態と逆の凹凸を持つ基材30、すなわち雌型の基材30を製作する。基材30は、表面にも微小な気孔が形成されることとなる多孔質部材、例えばグラファイト等を構成材料として製作すれば良い。なお、基材30の下端側には、マスキング32を施し、基準面への設置が可能な状態とする。
上記のようにして基材30の除去を行うことで、図2(F)に示すように、SiC膜単体構造体10が形成される。
このように、実施形態に係るSiC膜単体構造体10は、機能面12を構成する第1SiC層20を基準として、順次積層型SiC層22を積層することで構成されている。このため、SiC膜単体構造体10の機能面12は、精度良く基材30の形状に沿ったものとなる。また、形状精度に膜厚の影響を受けることがないため、SiC膜単体構造体10は、膜厚の増加による強度の向上を図ることも可能となる。
上述したように、本実施形態に係るSiC膜単体構造体10は、機能面12が膜厚の影響を受けることが無い。このため、図3に示すように、SiCにより構成される膜の厚みを厚くすることで、非機能面14に形成された溝の幅が狭められたとしても、機能面12は所望する精度を保つことができる。よって、重量物を配置、あるいは保持する場合でも工作精度の高いSiC膜単体構造体10を提供することが可能となる。
Claims (4)
- 気相成長型の成膜法により基材にSiC層を積層して構成された膜単体構造体であって、
前記SiC層は、前記基材表面に接して構成される第1SiC層における前記基材との接触面に機能面を構成していることを特徴とするSiC膜単体構造。 - 前記第1SiC層における前記機能面と反対側に、非機能面を構成するSiC層が積層されていることを特徴とする請求項1に記載のSiC膜単体構造。
- 形成面に角部を有する場合に、前記非機能面に比べて前記機能面の方が、前記角部の稜線が鋭いことを特徴とする請求項2に記載のSiC膜単体構造。
- 前記機能面には、前記基材の素材特性に起因した突起が備えられていることを特徴とする請求項1乃至3のいずれか1項に記載のSiC膜単体構造。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019036715A JP6564151B1 (ja) | 2019-02-28 | 2019-02-28 | SiC膜単体構造体 |
TW108130220A TWI709657B (zh) | 2019-02-28 | 2019-08-23 | SiC膜單體構造體 |
KR1020197030152A KR102045715B1 (ko) | 2019-02-28 | 2019-08-28 | SiC막 단체 구조체 |
US16/498,209 US11049747B2 (en) | 2019-02-28 | 2019-08-28 | SiC freestanding film structure |
CN201980002150.7A CN111868885A (zh) | 2019-02-28 | 2019-08-28 | SiC膜单体构造体 |
PCT/JP2019/033683 WO2020174724A1 (ja) | 2019-02-28 | 2019-08-28 | SiC膜単体構造体 |
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JP2019036715A JP6564151B1 (ja) | 2019-02-28 | 2019-02-28 | SiC膜単体構造体 |
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JP6564151B1 JP6564151B1 (ja) | 2019-08-21 |
JP2020141073A true JP2020141073A (ja) | 2020-09-03 |
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US (1) | US11049747B2 (ja) |
JP (1) | JP6564151B1 (ja) |
KR (1) | KR102045715B1 (ja) |
CN (1) | CN111868885A (ja) |
TW (1) | TWI709657B (ja) |
WO (1) | WO2020174724A1 (ja) |
Citations (7)
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JPH05124863A (ja) * | 1991-10-31 | 1993-05-21 | Shin Etsu Chem Co Ltd | 高純度炭化珪素体の製造方法 |
JPH06206718A (ja) * | 1992-07-31 | 1994-07-26 | Cvd Inc | 超高純度炭化ケイ素とそれによって作製した高温半導体加工用器具 |
JP2001158666A (ja) * | 1999-11-26 | 2001-06-12 | Toshiba Ceramics Co Ltd | CVD−SiC自立膜構造体、及びその製造方法 |
JP2003034867A (ja) * | 2001-07-27 | 2003-02-07 | Tokai Carbon Co Ltd | 管状SiC成形体およびその製造方法 |
US20040012024A1 (en) * | 2001-09-22 | 2004-01-22 | Shipley Company, L.L.C. | Opaque low resistivity silicon carbide |
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WO2018159754A1 (ja) * | 2017-03-02 | 2018-09-07 | 信越化学工業株式会社 | 炭化珪素基板の製造方法及び炭化珪素基板 |
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US5514439A (en) * | 1994-10-14 | 1996-05-07 | Sibley; Thomas | Wafer support fixtures for rapid thermal processing |
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US6475456B2 (en) * | 2000-02-29 | 2002-11-05 | Hoya Corporation | Silicon carbide film and method for manufacturing the same |
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US7718469B2 (en) * | 2004-03-05 | 2010-05-18 | The University Of North Carolina At Charlotte | Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
DE102005045081B4 (de) * | 2004-09-29 | 2011-07-07 | Covalent Materials Corp. | Suszeptor |
FR2964117B1 (fr) * | 2010-08-27 | 2012-09-28 | Commissariat Energie Atomique | Creuset pour la solidification de lingot de silicium |
JP6123408B2 (ja) * | 2013-03-26 | 2017-05-10 | 三菱電機株式会社 | 単結晶4H−SiC基板及びその製造方法 |
US20160121272A1 (en) * | 2014-10-31 | 2016-05-05 | Corning Incorporated | Inorganic membrane filter and methods thereof |
JP6368282B2 (ja) * | 2015-06-29 | 2018-08-01 | クアーズテック株式会社 | ウエハボート及びその製造方法 |
JP6544166B2 (ja) * | 2015-09-14 | 2019-07-17 | 信越化学工業株式会社 | SiC複合基板の製造方法 |
EP3514130A1 (en) * | 2018-01-18 | 2019-07-24 | Heraeus GMSI LLC | Process for manufacturing a silicon carbide coated body |
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- 2019-02-28 JP JP2019036715A patent/JP6564151B1/ja active Active
- 2019-08-23 TW TW108130220A patent/TWI709657B/zh active
- 2019-08-28 KR KR1020197030152A patent/KR102045715B1/ko active IP Right Grant
- 2019-08-28 US US16/498,209 patent/US11049747B2/en active Active
- 2019-08-28 WO PCT/JP2019/033683 patent/WO2020174724A1/ja active Application Filing
- 2019-08-28 CN CN201980002150.7A patent/CN111868885A/zh active Pending
Patent Citations (7)
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JPH05124863A (ja) * | 1991-10-31 | 1993-05-21 | Shin Etsu Chem Co Ltd | 高純度炭化珪素体の製造方法 |
JPH06206718A (ja) * | 1992-07-31 | 1994-07-26 | Cvd Inc | 超高純度炭化ケイ素とそれによって作製した高温半導体加工用器具 |
JP2001158666A (ja) * | 1999-11-26 | 2001-06-12 | Toshiba Ceramics Co Ltd | CVD−SiC自立膜構造体、及びその製造方法 |
JP2003034867A (ja) * | 2001-07-27 | 2003-02-07 | Tokai Carbon Co Ltd | 管状SiC成形体およびその製造方法 |
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JP2010219535A (ja) * | 2003-04-15 | 2010-09-30 | Saint-Gobain Ceramics & Plastics Inc | 半導体加工用部品を処理する方法とこの方法によって形成される部品 |
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TWI709657B (zh) | 2020-11-11 |
WO2020174724A1 (ja) | 2020-09-03 |
CN111868885A (zh) | 2020-10-30 |
KR102045715B1 (ko) | 2019-11-15 |
US11049747B2 (en) | 2021-06-29 |
JP6564151B1 (ja) | 2019-08-21 |
TW202033809A (zh) | 2020-09-16 |
US20210005469A1 (en) | 2021-01-07 |
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