JP6268277B2 - SiC基板の表面処理方法、SiC基板の製造方法、及び半導体の製造方法 - Google Patents
SiC基板の表面処理方法、SiC基板の製造方法、及び半導体の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 157
- 238000000034 method Methods 0.000 title claims description 74
- 238000004381 surface treatment Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000005530 etching Methods 0.000 claims description 145
- 238000010438 heat treatment Methods 0.000 claims description 57
- 239000011261 inert gas Substances 0.000 claims description 35
- 238000005498 polishing Methods 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 16
- 230000003746 surface roughness Effects 0.000 claims description 13
- 238000003754 machining Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 description 14
- 238000002474 experimental method Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000007666 vacuum forming Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
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Description
21 本加熱室
22 予備加熱室
30 坩堝
40 SiC基板
Claims (9)
- 少なくとも表面が単結晶SiCで構成されるSiC基板に対して、機械加工が行われた後の当該SiC基板の表面を処理する表面処理方法において、
前記SiC基板には、基板表面よりも内部に存在し、加熱することで顕在化して表面荒れの原因となる潜傷が生じており、
前記SiC基板をSi雰囲気下で加熱処理して当該SiC基板の表面の単結晶SiCをエッチングして潜傷を除去し、
前記SiC基板のエッチング時において、前記SiC基板の周囲の不活性ガス圧を調整することで当該SiC基板のエッチング速度を制御することを特徴とするSiC基板の表面処理方法。 - 請求項1に記載のSiC基板の表面処理方法であって、
機械加工が行われた後であって潜傷の顕在化前の前記SiC基板の表面に研磨傷が生じているとともに、当該研磨傷の内部に潜傷が生じており、Si雰囲気下でのエッチングを行うことで研磨傷及び潜傷が除去されることを特徴とするSiC基板の表面処理方法。 - 請求項1に記載のSiC基板の表面処理方法であって、
Si雰囲気下でのエッチングを行う場合の前記不活性ガス圧が0.01Pa以上1Pa以下であることを特徴とするSiC基板の表面処理方法。 - 請求項3に記載のSiC基板の表面処理方法であって、
Si雰囲気下でのエッチングを行う場合の温度が1800℃以上2000℃以下であることを特徴とするSiC基板の表面処理方法。 - 請求項1に記載のSiC基板の表面処理方法であって、
Si雰囲気下でのエッチングを行うことで、前記SiC基板の表面を5μm以上除去することを特徴とするSiC基板の表面処理方法。 - 請求項5に記載のSiC基板の表面処理方法であって、
前記SiC基板をエッチングする際のエッチング速度を200nm/min以上に制御するとともに、当該SiC基板のエッチング量を10μm以上とすることを特徴とするSiC基板の表面処理方法。 - 請求項1に記載の表面処理方法を用いて表面を処理する工程を含むことを特徴とするSiC基板の製造方法。
- 請求項1に記載のSiC基板の表面処理方法により、SiC基板の表面をエッチングする潜傷除去工程と、
前記潜傷除去工程で潜傷が除去された前記SiC基板の表面に単結晶SiCをエピタキシャル成長させるエピタキシャル成長工程と、
前記エピタキシャル成長工程が行われた前記SiC基板をSi雰囲気下で加熱処理する加熱工程と、
を含むことを特徴とする半導体の製造方法。 - 請求項8に記載の半導体の製造方法であって、
前記加熱工程では、前記SiC基板の周囲の不活性ガス圧を調整して当該SiC基板のエッチング速度を制御しつつ、当該SiC基板をSi雰囲気下で加熱処理してエッチングを行うことを特徴とする半導体の製造方法。
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PCT/JP2015/001303 WO2015151413A1 (ja) | 2014-03-31 | 2015-03-10 | SiC基板の表面処理方法、SiC基板、及び半導体の製造方法 |
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JP2018199591A (ja) * | 2017-05-25 | 2018-12-20 | 東洋炭素株式会社 | SiCウエハの製造方法、エピタキシャルウエハの製造方法、及びエピタキシャルウエハ |
TW202007801A (zh) * | 2018-07-25 | 2020-02-16 | 日商東洋炭素股份有限公司 | SiC晶圓之製造方法 |
US20220285502A1 (en) * | 2019-08-06 | 2022-09-08 | Denso Corporation | METHOD FOR MANUFACTURING SiC SUBSTRATE |
CN114651091B (zh) * | 2019-12-02 | 2024-04-19 | 住友电气工业株式会社 | 碳化硅衬底和碳化硅衬底的制造方法 |
JP7478372B2 (ja) | 2020-04-03 | 2024-05-07 | 株式会社Flosfia | 結晶膜の製造方法 |
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TW202207280A (zh) * | 2020-04-14 | 2022-02-16 | 學校法人關西學院 | 碳化矽基板的製造方法、碳化矽基板以及由雷射加工導入至碳化矽基板的應變層的去除方法 |
TWI830039B (zh) * | 2020-07-27 | 2024-01-21 | 環球晶圓股份有限公司 | 碳化矽晶碇的製造方法 |
WO2022092166A1 (ja) * | 2020-10-28 | 2022-05-05 | 学校法人関西学院 | 熱処理環境の評価方法及び炭化ケイ素基板 |
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JP2003234313A (ja) * | 2002-02-07 | 2003-08-22 | Kansai Tlo Kk | SiC基板表面の平坦化方法 |
JP4152130B2 (ja) * | 2002-03-25 | 2008-09-17 | 日本碍子株式会社 | エピタキシャル膜の製造方法およびエピタキシャル膜被覆基板の製造方法 |
JP5152887B2 (ja) * | 2006-07-07 | 2013-02-27 | 学校法人関西学院 | 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板 |
JP5213095B2 (ja) * | 2007-03-23 | 2013-06-19 | 学校法人関西学院 | 単結晶炭化ケイ素基板の表面平坦化方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板 |
JP5135545B2 (ja) * | 2008-04-18 | 2013-02-06 | 新日鐵住金株式会社 | 炭化珪素単結晶インゴット育成用種結晶及びその製造方法 |
WO2010090024A1 (ja) * | 2009-02-04 | 2010-08-12 | 日立金属株式会社 | 炭化珪素単結晶基板およびその製造方法 |
CN102597337A (zh) * | 2009-08-27 | 2012-07-18 | 住友金属工业株式会社 | SiC 单晶晶片及其制造方法 |
WO2013069067A1 (ja) * | 2011-11-11 | 2013-05-16 | 学校法人関西学院 | ナノメーター標準原器及びナノメーター標準原器の製造方法 |
JP5759393B2 (ja) * | 2012-01-12 | 2015-08-05 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
TWI600081B (zh) * | 2012-11-16 | 2017-09-21 | Toyo Tanso Co Ltd | Surface treatment method of single crystal silicon carbide substrate and single crystal silicon carbide substrate |
JP6057292B2 (ja) * | 2013-06-13 | 2017-01-11 | 学校法人関西学院 | SiC半導体素子の製造方法 |
JP6080075B2 (ja) * | 2013-06-13 | 2017-02-15 | 学校法人関西学院 | SiC基板の表面処理方法 |
JP2017105697A (ja) * | 2015-11-26 | 2017-06-15 | 東洋炭素株式会社 | 薄型のSiCウエハの製造方法及び薄型のSiCウエハ |
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- 2015-03-10 JP JP2016511353A patent/JP6268277B2/ja active Active
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KR20160108542A (ko) | 2016-09-19 |
EP3128535A4 (en) | 2018-03-14 |
TWI663298B (zh) | 2019-06-21 |
US20170121848A1 (en) | 2017-05-04 |
CN106062929B (zh) | 2019-10-08 |
EP3128535A1 (en) | 2017-02-08 |
CN106062929A (zh) | 2016-10-26 |
EP3128535B1 (en) | 2020-06-03 |
TW201542895A (zh) | 2015-11-16 |
WO2015151413A1 (ja) | 2015-10-08 |
JPWO2015151413A1 (ja) | 2017-04-13 |
KR101793397B1 (ko) | 2017-11-02 |
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