CN106062929A - SiC基板的表面处理方法、SiC基板和半导体的制造方法 - Google Patents
SiC基板的表面处理方法、SiC基板和半导体的制造方法 Download PDFInfo
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- CN106062929A CN106062929A CN201580009762.0A CN201580009762A CN106062929A CN 106062929 A CN106062929 A CN 106062929A CN 201580009762 A CN201580009762 A CN 201580009762A CN 106062929 A CN106062929 A CN 106062929A
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Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/10—Heating of the reaction chamber or the substrate
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-074749 | 2014-03-31 | ||
JP2014074749 | 2014-03-31 | ||
PCT/JP2015/001303 WO2015151413A1 (ja) | 2014-03-31 | 2015-03-10 | SiC基板の表面処理方法、SiC基板、及び半導体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106062929A true CN106062929A (zh) | 2016-10-26 |
CN106062929B CN106062929B (zh) | 2019-10-08 |
Family
ID=54239766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580009762.0A Active CN106062929B (zh) | 2014-03-31 | 2015-03-10 | SiC基板的表面处理方法、SiC基板和半导体的制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20170121848A1 (zh) |
EP (1) | EP3128535B1 (zh) |
JP (1) | JP6268277B2 (zh) |
KR (1) | KR101793397B1 (zh) |
CN (1) | CN106062929B (zh) |
TW (1) | TWI663298B (zh) |
WO (1) | WO2015151413A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018199591A (ja) * | 2017-05-25 | 2018-12-20 | 東洋炭素株式会社 | SiCウエハの製造方法、エピタキシャルウエハの製造方法、及びエピタキシャルウエハ |
TW202007801A (zh) * | 2018-07-25 | 2020-02-16 | 日商東洋炭素股份有限公司 | SiC晶圓之製造方法 |
WO2021025077A1 (ja) * | 2019-08-06 | 2021-02-11 | 株式会社デンソー | SiC基板の製造方法 |
US20220403550A1 (en) * | 2019-12-02 | 2022-12-22 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate and method for manufacturing silicon carbide substrate |
JP7478372B2 (ja) | 2020-04-03 | 2024-05-07 | 株式会社Flosfia | 結晶膜の製造方法 |
JP7478371B2 (ja) | 2020-04-03 | 2024-05-07 | 株式会社Flosfia | 結晶膜の製造方法 |
US20230197456A1 (en) * | 2020-04-14 | 2023-06-22 | Kwansei Gakuin Educational Foundation | Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processing |
CN113981529A (zh) * | 2020-07-27 | 2022-01-28 | 环球晶圆股份有限公司 | 碳化硅晶碇的制造方法 |
WO2022092166A1 (ja) * | 2020-10-28 | 2022-05-05 | 学校法人関西学院 | 熱処理環境の評価方法及び炭化ケイ素基板 |
TWI802406B (zh) * | 2021-07-29 | 2023-05-11 | 環球晶圓股份有限公司 | 碳化矽晶圓的加工方法 |
CN117080061A (zh) * | 2023-10-16 | 2023-11-17 | 希科半导体科技(苏州)有限公司 | 碳化硅衬底的平整方法、碳化硅衬底以及半导体器件 |
Citations (6)
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JP2004002126A (ja) * | 2002-03-25 | 2004-01-08 | Ngk Insulators Ltd | 炭化珪素基板、炭化珪素基板の製造方法、酸化膜被覆基板、酸化膜被覆基板の製造方法および電子素子 |
JP2008016691A (ja) * | 2006-07-07 | 2008-01-24 | Kwansei Gakuin | 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板 |
JP2008230944A (ja) * | 2007-03-23 | 2008-10-02 | Kwansei Gakuin | 単結晶炭化ケイ素基板の表面平坦化方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板 |
JP2009256145A (ja) * | 2008-04-18 | 2009-11-05 | Nippon Steel Corp | 炭化珪素単結晶育成用種結晶及びその製造方法 |
CN102597337A (zh) * | 2009-08-27 | 2012-07-18 | 住友金属工业株式会社 | SiC 单晶晶片及其制造方法 |
WO2014199615A1 (ja) * | 2013-06-13 | 2014-12-18 | 学校法人関西学院 | SiC基板の表面処理方法 |
Family Cites Families (7)
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JP2003234313A (ja) * | 2002-02-07 | 2003-08-22 | Kansai Tlo Kk | SiC基板表面の平坦化方法 |
JP5516424B2 (ja) * | 2009-02-04 | 2014-06-11 | 日立金属株式会社 | エピタキシャル成長用炭化珪素単結晶基板の製造方法 |
US10012675B2 (en) * | 2011-11-11 | 2018-07-03 | Kwansei Gakuin Educational Foundation | Nanometer standard prototype and method for manufacturing nanometer standard prototype |
JP5759393B2 (ja) * | 2012-01-12 | 2015-08-05 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
TWI600081B (zh) * | 2012-11-16 | 2017-09-21 | Toyo Tanso Co Ltd | Surface treatment method of single crystal silicon carbide substrate and single crystal silicon carbide substrate |
JP6057292B2 (ja) * | 2013-06-13 | 2017-01-11 | 学校法人関西学院 | SiC半導体素子の製造方法 |
JP2017105697A (ja) * | 2015-11-26 | 2017-06-15 | 東洋炭素株式会社 | 薄型のSiCウエハの製造方法及び薄型のSiCウエハ |
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2015
- 2015-03-10 WO PCT/JP2015/001303 patent/WO2015151413A1/ja active Application Filing
- 2015-03-10 EP EP15773856.8A patent/EP3128535B1/en active Active
- 2015-03-10 KR KR1020167022411A patent/KR101793397B1/ko active IP Right Grant
- 2015-03-10 CN CN201580009762.0A patent/CN106062929B/zh active Active
- 2015-03-10 JP JP2016511353A patent/JP6268277B2/ja active Active
- 2015-03-10 US US15/300,617 patent/US20170121848A1/en not_active Abandoned
- 2015-03-26 TW TW104109743A patent/TWI663298B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004002126A (ja) * | 2002-03-25 | 2004-01-08 | Ngk Insulators Ltd | 炭化珪素基板、炭化珪素基板の製造方法、酸化膜被覆基板、酸化膜被覆基板の製造方法および電子素子 |
JP2008016691A (ja) * | 2006-07-07 | 2008-01-24 | Kwansei Gakuin | 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板 |
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TW201542895A (zh) | 2015-11-16 |
CN106062929B (zh) | 2019-10-08 |
JP6268277B2 (ja) | 2018-01-24 |
WO2015151413A1 (ja) | 2015-10-08 |
TWI663298B (zh) | 2019-06-21 |
EP3128535B1 (en) | 2020-06-03 |
US20170121848A1 (en) | 2017-05-04 |
KR101793397B1 (ko) | 2017-11-02 |
KR20160108542A (ko) | 2016-09-19 |
EP3128535A4 (en) | 2018-03-14 |
JPWO2015151413A1 (ja) | 2017-04-13 |
EP3128535A1 (en) | 2017-02-08 |
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