TWI720700B - SiC膜構造體及SiC膜構造體的製造方法 - Google Patents

SiC膜構造體及SiC膜構造體的製造方法 Download PDF

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TWI720700B
TWI720700B TW108142781A TW108142781A TWI720700B TW I720700 B TWI720700 B TW I720700B TW 108142781 A TW108142781 A TW 108142781A TW 108142781 A TW108142781 A TW 108142781A TW I720700 B TWI720700 B TW I720700B
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Abstract

本發明的課題係在於提供能夠作成密封構造的SiC膜構造體。 本發明的解決手段係一種SiC膜構造體，其特徵在於，其係藉由氣相沉積型的成膜法，在基材50的外周形成SiC膜，藉由去除基材50得到以SiC膜的立體形狀的SiC膜構造體10，其具備：具有以SiC膜構成的立體形狀，同時具有用於去除基材50的開口部12a的本體12；覆蓋開口部12a的蓋體14。

Description

SiC膜構造體及SiC膜構造體的製造方法
本發明係關於SiC成膜技術，特別是以SiC膜所構成的立體構造體、以及SiC膜構造體的製造方法。
由於耐環境性優良，化學穩定性高，特別是在半導體元件製造的領域，作為在半導體製造時的晶圓舟、管、及檔片等利用在超高溫下的治具或產品，藉由SiC構成的膜單體所構成的構造體的需要提高。
藉由如此的SiC膜所構成的構造體(以下，稱為SiC膜構造體)，不只是平面形狀，亦能夠製造立體形狀物。其具體製造方法，已知例如專利文獻1所揭示的。專利文獻1所揭示的SiC膜構造體的製造方法，首先，以碳(石墨)等製作構成的基材。接著，在基材表面，經由CVD(Chemical Vapor Deposition︰化學氣相沉積)法形成SiC膜。
接著，藉由將成膜的材料在高溫氧化氣氛中加熱，將基材燒除。藉由進行如此的處理，去除基材，即使是具有在機械加工中難以去除基材的複雜的立體形狀之構造體，也能去除基材，得到SiC膜構造體。 ［先前技術文獻］ ［專利文獻］
［專利文獻1］日本特開2001-158666號公報
［發明所欲解決的課題］
如上所述形成的SiC膜構造體中，具有立體形狀的，係在基材表面的部分、或全面形成SiC膜，需要進行基材的去除。但是，為去除基材，需要設置露出基材的一部分的氧化孔，故SiC膜構造體，不能作成完全的密封構造。
若在作為產品構成的SiC膜構造體上，殘存如此的氧化孔，則在清洗時等藥液等的水分進入內部，而有時產生難以乾燥的地方。 因此在本發明，為解決上述問題，提供能夠作成密封構造的SiC膜構造體、以及發揮該效果的SiC膜構造體的製造方法為目標。 ［用於解決課題的手段］
用於達成上述目標的本發明的SiC膜構造體，其特徵在於，其係藉由氣相沉積型的成膜法，在基材的外周形成SiC膜，藉由去除上述基材得到以SiC膜的立體形狀的SiC膜構造體，其具備：具有以SiC膜構成的立體形狀，同時具有用於去除上述基材而使基材的一部分露出的開口部的本體；及覆蓋上述開口部，用於成為使上述SiC膜構造體密閉的密封構造的蓋體。
此外，具有如上所述特徵的SiC膜構造體，將上述蓋體以SiC膜構成為佳。根據具有如此的特徵，可將SiC膜構造體以SiC單體構成。此外，由於能夠使本體與蓋體的熱膨脹係數一致，故沒有伴隨溫度變化之應變之虞。
再者，在具有如上所述特徵的SiC膜構造體，上述蓋體，具有：與上述開口部嵌合的軸套部；及伸出上述軸套部的外周覆蓋上述開口部的凸緣部為佳。藉由具有如此的特徵，即使構造體為微小的東西，亦可容易地進行蓋體的定位及開口部的密封。
此外，用於達成上述目標的本發明的SiC膜構造體的製造方法，其特徵在於，其係藉由氣相沉積型的成膜法，在基材的外周形成SiC膜，藉由去除上述基材得到以SiC膜的立體形狀的SiC膜構造體的製造方法，其包含：在上述基材的一部分露出的狀態下，在該基材的外周形成SiC膜之膜形成步驟；在上述膜形成步驟之後，去除上述基材之基材去除步驟；及藉由蓋體將去除基材的上述SiC膜的開口部塞住，以成為使上述SiC膜構造體密閉的密封構造之密封步驟。
此外，在具有如上所述特徵的SiC膜構造體的製造方法，在上述密封步驟中，可包含將上述蓋體與上述SiC膜的接觸處以新的SiC膜覆蓋的步驟。根據具有如此的特徵，可將SiC膜構造體以SiC單體構成。此外，由於以去除基材後的SiC膜構成的本體與蓋體的熱膨脹係數一致，故沒有伴隨溫度變化之應變之虞。
再者，在具有如上所述特徵的SiC膜構造體的製造方法，亦可在上述SiC膜與上述蓋體之間加熱而燒除的間隔物介在的狀態下，進行上述密封步驟。根據具有如此的特徵，由於以SiC膜構成的本體與蓋體之間，構成空隙，而能將內部氣體抽氣或置換惰性氣體等。此外，即使在爐內實施密封步驟的情況下，藉由實施密封步驟時的加熱使空間消失，而開口部會被密封。 ［發明的效果］
具有如上所述特徵的SiC膜構造體，可將具有立體形狀的本體作成沒有殘留開口部的密封構造。此外，具有如上所述特徵的SiC膜構造體的製造方法，所製造的SiC膜構造體可成為密封構造。
以下，將關於本發明的SiC膜構造體、以及SiC膜構造體的製造方法的實施形態，參照圖面詳細說明。再者，以下所示實施形態，係在實施本發明上較適形態的一部分，在具備發明特定事項的範圍，即使變更構成的一部分，亦可視為本發明的一部分。
[構成]
關於本實施形態的SiC膜構造體10，係如圖1所示，以本體12與蓋體14、及SiC鍍層16作為基本而構成。本體12，係形成立體形狀的中空構件，在至少一部分具備開口部12a。開口部12a，設成與中空部12b聯通。再者，本體12，係以SiC(碳化矽)膜構成。
蓋體14，係用於密封形成在本體12的開口部12a的要素。在圖1所示之例子，係由軸套部14a與凸緣部14b構成。軸套部14a，係與形成在本體12的開口部12a嵌合，形成定位的要素，凸緣部14b，係在軸套部14a的一方的端部側，向軸套部14a的外周伸出，擔任覆蓋開口部12a的角色的要素。藉由設置凸緣部14b，軸套部14a並無脫落在本體12內部之虞。因此，即使是軸套部14a與開口部12a的間隙多少變大時，並無障礙，而無須用於提高精度的加工等。
關於蓋體14的構成構件，並無特別限定，惟使用對溫度、藥品等的耐性，即耐環境特性高的構件為佳。再者，在本實施形態，藉由SiC構成蓋體14。因為藉由作成如此的構成，可將SiC膜構造體10作成SiC膜單體構造。藉由將蓋體14以與本體12相同的構件構成，即使在高溫、或者低溫環境下，並沒有發生因熱膨脹係數差的應變等之虞。
SiC鍍層16，係擔任將本體12與蓋體14接合的角色的要素。因此，SiC鍍層16，形成為至少覆蓋本體12與蓋體14的外緣部的接觸處。在圖1所示形態，SiC鍍層16，係形成為覆蓋在蓋體14的凸緣部14b的形成面，同時覆蓋位於凸緣部14b外周的本體12。
根據如上所述的構成的SiC膜構造體10，雖然是具有以SiC膜構成的立體形狀的構造體，能夠作成完全密閉的密封構造。藉此，在清洗SiC膜構造體10時，並不會發生藥液等進入內部，而難以洗淨或乾燥等情形。
[製造方法] 接著，參照圖2，說明關於本實施形態的SiC膜構造體10的製造方法。首先，如圖2(A)所示，形成具有立體形狀的基材50。關於基材50的形狀，並無特別限定。再者，如圖2(A)所示的例子，為容易說明以長方體型表示。作為基材50的構成構件，以石墨或矽等，相對較容易藉由加熱及藥品去除的材質為佳。在本實施形態，作為基材50的構成構件，採用石墨。因為可藉由在高溫氧化氣氛中加熱而燒除。再者，對基材50，至少在一部分，施以用於構成開口部12a的遮罩52。
接著，如圖2(B)所示，藉由氣相沉積型的成膜法，在成膜基材50的表面成膜構成本體12的SiC膜。再者，所謂氣相沉積型的成膜法，例如作為CVD法即可，為並非限定於此，以真空蒸鍍型的PVD(Physical Vapor Deposition︰物理氣相沉積)法、或MBE(Molecular Beam Epitaxy︰分子束磊晶)法亦可。SiC膜的膜厚，並無特別限定，惟需要去除基材50時，具備可作為立體構造物可自立的強度的程度的膜厚。
在基材50的外周形成SiC膜之後，如圖2(C)所示，去除遮罩52使基材50的一部分露出。之後，藉由將成膜的基材50在高溫氧化氣氛加熱，進行去除基材50。如本實施形態，將基材50以石墨構成時，基材50會變成二氧化碳而消失。
去除基材50之後，如圖2(D)所示，在形成本體12的開口部12a配置蓋體14。再者，蓋體14，只要以別於形成本體12的步驟，以前後或平行製作即可。
將蓋體14配置在開口部12a之後，如圖2(E)所示，在蓋體14的凸緣部14b的外周，使本體12稍微露出，在本體12的外周施以遮罩54。施以遮罩54之後，以覆蓋位於遮罩的開口部的蓋體、及本體的露出部，將SiC成膜，形成SiC鍍層。關於SiC鍍層的形成步驟，以與圖2(B)的成膜步驟相同即可。再者，關於從圖2(D)至圖2(E)的步驟，亦可在大氣中實施，惟亦可在真空氣氛中實施。其他，亦可在爐內，將內部氣體以惰性氣體等置換之後，進行蓋體14的密封。再者，以在無人環境進行本體12的內部氣體的抽氣或置換時，在開口部12a與蓋體14之間介在間隔物的(無圖示)而進行作業即可。藉由將間隔物的構成材料以矽等，可藉由加熱燒除的材料，抽氣、置換之後，間隔物在成膜步驟空間會消失。因此，用於抽氣或置換而形成的空隙會消失，而開口部12a會被密閉。
以SiC鍍層完成本體12與蓋體14的接合密封之後，如圖2(F)所示，藉由去除遮罩54，完成SiC膜構造體10。
[變形例] 在上述實施形態，將本體12的開口部12a藉由蓋體14密封時，SiC鍍層16，係以覆蓋蓋體14全體而形成。但是，SiC鍍層16，只要構成為覆蓋本體12與蓋體14的外緣部的接觸處即可。即，如圖3所示，在蓋體14的中心附近，亦可不設SiC鍍層16，而在外周上配置SiC鍍層16。因為即使以如此的構成的情形，密封本體12的開口部12a的構成並沒有變化。
此外，在上述實施形態，說明蓋體14，係由軸套部14a及凸緣部14b構成，藉由將軸套部14a嵌合在開口部12a，圖謀蓋體14的定位。但是蓋體14，只要可密封本體12的開口部12a即可。因此，亦可如圖4所示，將蓋體14以平板構成。因為只要可覆蓋開口部12a，即可發揮作為蓋體14的功能。
10:SiC膜構造體 12:本體 12a:開口部 12b:中空部 14:蓋體 14a:軸套部 14b:凸緣部 16:SiC鍍層 50:基材 52:遮罩 54:遮罩
［圖1］係表示關於實施形態的SiC膜構造體的構成圖。 ［圖2］係用於說明關於實施形態的SiC膜構造體的製造方法之圖。 ［圖3］係表示在構成SiC膜構造體的第1變形例之圖。
〔圖4〕係表示在構成SiC膜構造體的第2變形例之圖。
10:SiC膜構造體
12:本體
12a:開口部
12b:中空部
14:蓋體
14a:軸套部
14b:凸緣部
16:SiC鍍層

Claims (6)

  1. 一種SiC膜構造體，其特徵在於，其係藉由氣相沉積型的成膜法，在基材的外周形成SiC膜，藉由去除上述基材得到以SiC膜的立體形狀的SiC膜構造體，其具備： 具有以SiC膜構成的立體形狀，同時具有用於去除上述基材而使基材的一部分露出的開口部的本體；及 覆蓋上述開口部，用於成為使上述SiC膜構造體密閉的密封構造的蓋體。
  2. 如申請專利範圍第1項所述之SiC膜構造體，其中將上述蓋體以SiC膜構成。
  3. 如申請專利範圍第1或2項所述之SiC膜構造體，其中上述蓋體，具有：與上述開口部嵌合的軸套部；及伸出上述軸套部的外周覆蓋上述開口部的凸緣部。
  4. 一種SiC膜構造體的製造方法，其特徵在於，其係藉由氣相沉積型的成膜法，在基材的外周形成SiC膜，藉由去除上述基材得到以SiC膜的立體形狀的SiC膜構造體的製造方法，其包含： 在上述基材的一部分露出的狀態下，在該基材的外周形成SiC膜之膜形成步驟； 在上述膜形成步驟之後，去除上述基材之基材去除步驟；及 藉由蓋體將去除基材的上述SiC膜的開口部塞住，以成為使上述SiC膜構造體密閉的密封構造之密封步驟。
  5. 如申請專利範圍第4項所述之SiC膜構造體的製造方法，其中在上述密封步驟中，包含將上述蓋體與上述SiC膜的接觸處以新的SiC膜覆蓋的步驟。
  6. 如申請專利範圍第5項所述之SiC膜構造體的製造方法，其中在上述SiC膜與上述蓋體之間加熱而燒除的間隔物介在的狀態下，進行上述密封步驟。
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US11476128B2 (en) * 2020-08-25 2022-10-18 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289537A (ja) * 2001-03-27 2002-10-04 Mitsui Eng & Shipbuild Co Ltd ＣＶＤ―ＳｉＣ中空体縦型ウェハボート
JP2008034729A (ja) * 2006-07-31 2008-02-14 Mitsui Eng & Shipbuild Co Ltd ウエハボート

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4735638Y1 (zh) 1967-08-25 1972-10-28
US3734705A (en) 1971-04-09 1973-05-22 Owens Illinois Inc Method and apparatus for producing and packaging sealed tubular glass bodies
JPS577923A (en) * 1980-06-18 1982-01-16 Toshiba Ceramics Co Ltd Manufacture of receiving table for processing single silicon crystal wafer
US4400232A (en) * 1981-11-09 1983-08-23 Eagle-Picher Industries, Inc. Control of oxygen- and carbon-related crystal defects in silicon processing
JPH043568A (ja) 1990-04-19 1992-01-08 Nec Corp 課金方式
JP2701615B2 (ja) * 1991-09-27 1998-01-21 三井造船株式会社 半導体拡散炉用ウェハボートの製造方法
JP3250628B2 (ja) * 1992-12-17 2002-01-28 東芝セラミックス株式会社 縦型半導体熱処理用治具
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
JP3648112B2 (ja) 1999-11-26 2005-05-18 東芝セラミックス株式会社 ＣＶＤ−ＳｉＣ自立膜構造体、及びその製造方法
US9612215B2 (en) 2004-07-22 2017-04-04 Toyo Tanso Co., Ltd. Susceptor
JP2006077302A (ja) * 2004-09-10 2006-03-23 Asahi Glass Co Ltd 炭化ケイ素部材の製造法
US20100032857A1 (en) * 2005-02-28 2010-02-11 Saint-Gobain Ceramics & Plastics, Inc. Ceramic components, coated structures and methods for making same
JP4894717B2 (ja) * 2007-10-23 2012-03-14 株式会社デンソー 炭化珪素単結晶基板の製造方法
JP4877204B2 (ja) * 2007-11-13 2012-02-15 株式会社デンソー 炭化珪素単結晶の製造装置
KR102081210B1 (ko) * 2011-07-28 2020-02-25 도판 인사츠 가부시키가이샤 적층체, 가스 배리어 필름, 적층체의 제조 방법 및 적층체 제조 장치
JP7139198B2 (ja) * 2018-08-30 2022-09-20 アズビル株式会社 紫外線センサ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289537A (ja) * 2001-03-27 2002-10-04 Mitsui Eng & Shipbuild Co Ltd ＣＶＤ―ＳｉＣ中空体縦型ウェハボート
JP2008034729A (ja) * 2006-07-31 2008-02-14 Mitsui Eng & Shipbuild Co Ltd ウエハボート

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