JP2008034729A - ウエハボート - Google Patents
ウエハボート Download PDFInfo
- Publication number
- JP2008034729A JP2008034729A JP2006208566A JP2006208566A JP2008034729A JP 2008034729 A JP2008034729 A JP 2008034729A JP 2006208566 A JP2006208566 A JP 2006208566A JP 2006208566 A JP2006208566 A JP 2006208566A JP 2008034729 A JP2008034729 A JP 2008034729A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- flange member
- wafer boat
- boat
- support sleeve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 18
- 235000012431 wafers Nutrition 0.000 description 121
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】上側フランジ部材101aと下側フランジ部材101bとが、複数の支柱102により脱着可能に連結されている。またウエハー支持スリーブ103は、支柱102に外挿されて上側フランジ部材101aと下側フランジ部材101bとの間に配置されている。このように構成されたウエハボートによれば、ウエハー支持スリーブ103が中空構造とされているので、熱容量が低減されるようになる。
【選択図】 図1
Description
Claims (2)
- 第1基盤及び第2基盤と、
前記第1基盤及び前記第2基盤を脱着可能に連結する複数の支柱と、
ウエハ載置用の溝部が形成された中空構造の複数のウエハ支持部材と
を備え、
前記ウエハ支持部材は、前記支柱が貫通されることによって前記第1基盤及び前記第2基盤の間に保持される
ことを特徴とするウエハボート。 - 請求項1記載のウエハボートにおいて、
前記ウエハ支持部材は、化学的気相成長法により堆積された炭化珪素より形成されている
ことを特徴とするウエハボート。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006208566A JP5192137B2 (ja) | 2006-07-31 | 2006-07-31 | ウエハボート |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006208566A JP5192137B2 (ja) | 2006-07-31 | 2006-07-31 | ウエハボート |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008034729A true JP2008034729A (ja) | 2008-02-14 |
JP5192137B2 JP5192137B2 (ja) | 2013-05-08 |
Family
ID=39123825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006208566A Active JP5192137B2 (ja) | 2006-07-31 | 2006-07-31 | ウエハボート |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5192137B2 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014194892A1 (de) * | 2013-06-06 | 2014-12-11 | Centrotherm Photovoltaics Ag | Haltevorrichtung, verfahren zu deren herstellung und verwendung derselben |
JP2017005112A (ja) * | 2015-06-10 | 2017-01-05 | クアーズテック株式会社 | ウエハボート及びその製造方法 |
CN107641799A (zh) * | 2017-09-15 | 2018-01-30 | 浙江爱旭太阳能科技有限公司 | 改善el边角发黑和卡点发黑的管式perc电池石墨舟 |
CN107641798A (zh) * | 2017-09-15 | 2018-01-30 | 浙江爱旭太阳能科技有限公司 | 改善el边角发黑和卡点发黑的管式perc电池石墨舟 |
TWI701718B (zh) * | 2019-02-28 | 2020-08-11 | 日商亞都麻布股份有限公司 | SiC膜構造體 |
CN113488382A (zh) * | 2021-05-31 | 2021-10-08 | 北海惠科半导体科技有限公司 | 晶舟及扩散设备 |
CN114351256A (zh) * | 2020-10-13 | 2022-04-15 | 中国科学院微电子研究所 | 晶舟、拆装工具以及晶圆加工设备 |
CN115662928A (zh) * | 2022-11-16 | 2023-01-31 | 杭州盾源聚芯半导体科技有限公司 | 一种降低硅片损伤的硅舟 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH067238U (ja) * | 1992-06-29 | 1994-01-28 | 株式会社福井信越石英 | 半導体熱処理装置 |
JPH06132390A (ja) * | 1992-10-15 | 1994-05-13 | M C Electron Kk | ウェーハボート |
JPH08236468A (ja) * | 1995-03-01 | 1996-09-13 | Yamagata Shinetsu Sekiei:Kk | ウエハ保持装置 |
JPH11186181A (ja) * | 1997-12-24 | 1999-07-09 | Shinetsu Quartz Prod Co Ltd | 基盤熱処理用支持治具 |
JP2000150401A (ja) * | 1998-11-04 | 2000-05-30 | Toshiba Ceramics Co Ltd | 組立式ウェーハボート |
JP2002289537A (ja) * | 2001-03-27 | 2002-10-04 | Mitsui Eng & Shipbuild Co Ltd | CVD―SiC中空体縦型ウェハボート |
-
2006
- 2006-07-31 JP JP2006208566A patent/JP5192137B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH067238U (ja) * | 1992-06-29 | 1994-01-28 | 株式会社福井信越石英 | 半導体熱処理装置 |
JPH06132390A (ja) * | 1992-10-15 | 1994-05-13 | M C Electron Kk | ウェーハボート |
JPH08236468A (ja) * | 1995-03-01 | 1996-09-13 | Yamagata Shinetsu Sekiei:Kk | ウエハ保持装置 |
JPH11186181A (ja) * | 1997-12-24 | 1999-07-09 | Shinetsu Quartz Prod Co Ltd | 基盤熱処理用支持治具 |
JP2000150401A (ja) * | 1998-11-04 | 2000-05-30 | Toshiba Ceramics Co Ltd | 組立式ウェーハボート |
JP2002289537A (ja) * | 2001-03-27 | 2002-10-04 | Mitsui Eng & Shipbuild Co Ltd | CVD―SiC中空体縦型ウェハボート |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014194892A1 (de) * | 2013-06-06 | 2014-12-11 | Centrotherm Photovoltaics Ag | Haltevorrichtung, verfahren zu deren herstellung und verwendung derselben |
CN105453249A (zh) * | 2013-06-06 | 2016-03-30 | 森特瑟姆光伏股份有限公司 | 保持架、其制造方法及其使用 |
JP2017005112A (ja) * | 2015-06-10 | 2017-01-05 | クアーズテック株式会社 | ウエハボート及びその製造方法 |
CN107641799A (zh) * | 2017-09-15 | 2018-01-30 | 浙江爱旭太阳能科技有限公司 | 改善el边角发黑和卡点发黑的管式perc电池石墨舟 |
CN107641798A (zh) * | 2017-09-15 | 2018-01-30 | 浙江爱旭太阳能科技有限公司 | 改善el边角发黑和卡点发黑的管式perc电池石墨舟 |
CN107641799B (zh) * | 2017-09-15 | 2024-01-12 | 浙江爱旭太阳能科技有限公司 | 改善el边角发黑和卡点发黑的管式perc电池石墨舟 |
CN107641798B (zh) * | 2017-09-15 | 2024-01-12 | 浙江爱旭太阳能科技有限公司 | 改善el边角发黑和卡点发黑的管式perc电池石墨舟 |
CN111868884A (zh) * | 2019-02-28 | 2020-10-30 | 艾德麦普株式会社 | SiC膜构造体 |
US10804096B2 (en) | 2019-02-28 | 2020-10-13 | Admap Inc. | SiC film structure and method for manufacturing SiC film structure |
TWI720700B (zh) * | 2019-02-28 | 2021-03-01 | 日商亞都麻布股份有限公司 | SiC膜構造體及SiC膜構造體的製造方法 |
US11508570B2 (en) | 2019-02-28 | 2022-11-22 | Admap Inc. | SiC film structure |
WO2020174725A1 (ja) * | 2019-02-28 | 2020-09-03 | 株式会社アドマップ | SiC膜構造体 |
TWI701718B (zh) * | 2019-02-28 | 2020-08-11 | 日商亞都麻布股份有限公司 | SiC膜構造體 |
CN111868884B (zh) * | 2019-02-28 | 2024-05-10 | 艾德麦普株式会社 | SiC膜构造体 |
CN114351256A (zh) * | 2020-10-13 | 2022-04-15 | 中国科学院微电子研究所 | 晶舟、拆装工具以及晶圆加工设备 |
CN113488382A (zh) * | 2021-05-31 | 2021-10-08 | 北海惠科半导体科技有限公司 | 晶舟及扩散设备 |
CN115662928A (zh) * | 2022-11-16 | 2023-01-31 | 杭州盾源聚芯半导体科技有限公司 | 一种降低硅片损伤的硅舟 |
CN115662928B (zh) * | 2022-11-16 | 2023-08-29 | 杭州盾源聚芯半导体科技有限公司 | 一种降低硅片损伤的硅舟 |
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