CN105453249A - 保持架、其制造方法及其使用 - Google Patents

保持架、其制造方法及其使用 Download PDF

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CN105453249A
CN105453249A CN201480044447.7A CN201480044447A CN105453249A CN 105453249 A CN105453249 A CN 105453249A CN 201480044447 A CN201480044447 A CN 201480044447A CN 105453249 A CN105453249 A CN 105453249A
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retainer
coating
plasma
deposit
carborundum
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汉斯-彼得·瓦尔克
亚历山大·皮耶楚拉
乌尔里克·沃克
詹森-沃韦·法奇斯
迪耶特尔·泽尔尼克尔
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Centrotherm Photovoltaics AG
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Abstract

其表面上具有由碳化硅、玻璃碳或热解碳构成的覆层(12；52)的一种保持架(10；50)，用于生产该保持架的方法和该保持架在等离子体驱动汽相淀积中的使用。

Description

保持架、其制造方法及其使用
本发明涉及一种保持架、用于制造该保持架的方法以及该保持架的使用。
在半导体器件尤其是硅太阳能电池的生产中，经常进行等离子体驱动的汽相淀积，专业术语称为等离子体增强化学汽相淀积(PECVD)。在此情况下，将要被涂覆的半导体基底通常被设置在保持架上。在PECVD中，所谓的船通常被用作保持架。
在硅太阳能电池的工业化制造中，硅太阳能电池基底经常被设置在所述船上(这些船有时也被称为PECVD船)，并在PECVD淀积的场合中被设置了由氮化硅构成的抗反射层。然而，只有在所用的船预先已经被提供有一个氮化硅层的情况下，才获得均匀的抗反射层。因此，在用氮化硅对设置在船上的太阳能电池基底进行涂覆之前，所用的船在一个所谓的氮化硅预涂覆中被涂覆上氮化硅。石墨通常被用作船的材料。氮化硅预涂覆的要求，可能是由于硅太阳能电池基底与石墨的表面电阻相差太大。然而，从形态学或化学的原因上说，船材料的多孔性或其颗粒尺寸的构成可能也是一部分因素。目前，这些原因还没有被明确地澄清。
由于作为电介质的氮化硅具有电绝缘效果，且在硅太阳能电池基底上PECVD淀积氮化硅需要船与设置在其上的硅太阳能电池基底之间的导电接触，在氮化硅预涂覆期间其中硅太阳能电池基底与船相互抵靠的区域必须不受氮化硅预涂覆。这通常是通过在氮化硅预涂覆期间在这些区域中设置硅基底来实现的，这些硅基底通常被称为虚设晶圆，且在所述区域中大体上阻止了在被虚设晶圆覆盖的船表面部分或保持耳上的氮化硅淀积。在此情况下，保持耳应该被理解为船表面上的突出部，在该突出部处硅太阳能电池基底得到支撑。这些保持耳对电接触有重要贡献，因为在氮化硅淀积期间，硅基底经常与所采用的船的抵靠面积经常是不充分的。
如果在PECVD淀积中有含氧气体，例如当一氧化二氮被用作处理气体时，氮化硅预涂覆不能阻止氮化硅预涂覆期间虚设晶圆所屏蔽的区域中的船的分解。对于其他保持架，诸如快速处理装置(即所谓的快速热处理(RTP)装置)中使用的基座，情况也是同样。含氧处理气体环境中的所述分解，导致了所用的保持架的损耗。
因此，本发明的目的，是提供一种保持架，它具有含氧处理气体环境下的改善的耐损耗性。
该目的由具有权利要求1的特征的保持架实现。
另外，本发明的目的是获得成本有利的基底涂覆。
该目的通过权利要求8所限定的根据本发明的保持架的使用获得得到实现。
进一步地，本发明的目的是提供用于生产根据本发明的保持架的一种成本有效的方法。
该目的借助具有权利要求11的特征的方法而得到实现。
从属权利要求分别涉及有利的变形方案。
根据本发明的保持架具有在其表面上的由碳化硅、玻璃碳或热解碳组成的覆层。
用如此涂覆的保持架，可以实现在含氧处理气体环境下的增大的耐损耗性。对于用一氧化氮或一氧化二氮作为处理气体所形成的含氧处理气体环境，尤其是这样的情况。
所述涂覆材料原则上可以用任何已知的方式施加。由玻璃碳组成的涂覆材料可用例如与酚醛树脂粉末混合的酒精浴施加，且被涂覆的物品被浸泡在所产生的溶液中。之后，所要涂覆的物品被加热至至少600℃的温度。这种过程尤其在所要涂覆的物品是由石墨构成的情况下被证明是有效的。
优选地，提供由碳化硅构成的涂覆。碳化硅是防磨损和耐氢氟酸的。因此，在多数应用中，用碳化硅的后涂覆只在非常罕见的情况下才需要。另外，碳化硅对半导体技术中的保持架通常采用的石墨有良好的附着。进一步地，已经发现，带有碳化硅覆层的石墨体具有与硅太阳能电池基底类似的表面电阻。这似乎对借助PECVD方法淀积在硅太阳能电池基底上的层的性质具有有利的效果。然而，形态学或化学的原因或石墨的颗粒尺寸构成在此也可能起一定作用。已经发现，在碳化硅涂覆的保持架的情况下，尤其是在碳化硅涂覆的船的情况下，序言中描述的氮化硅预覆层可被省去，而不会对利用这样的保持架淀积的、例如抗反射覆层的氮化硅层的均匀性产生相关程度的不利影响。由于碳化硅是导电的，也不再需要上述的虚设晶圆。在硅太阳能电池的工业生产中，虚设晶圆的要求是一个不可忽略的成本因素，因而根据本发明的保持架的采用和虚设晶圆的要求的相应省略使得制造成本得到了降低。
本案中的碳化硅或碳化硅覆层应该被理解为表示所采用的材料或相关的覆层基本上由碳化硅构成。并不需要该材料是完全纯净的。可以存在实际中通常具有的杂质、界面处的外来材料等等。
如果根据本发明的保持架被用于氮化硅淀积中，则氮化硅也被淀积在所采用的保持架上。在一定数目的淀积之后，氮化硅部分从保持架剥落。这会对淀积在设置在保持架上的物体上的氮化硅层的质量产生不利影响。因此，在一定数目的淀积之后，氮化硅淀积装置的保持架通常受到回蚀。已经发现，通过采用根据本发明的保持架，与之前已知的保持架相比，在需要进行下一次回蚀步骤之前所能够进行的淀积的数目增加了。对于具有由碳化硅构成的覆层的保持架，尤其是这种情况。在下一次回蚀处理之前用一个保持架所能够进行的氮化硅淀积数目的加大，使得诸如太阳能电池的工业化制造的工业化应用的成本得到了进一步降低。
如果该保持架带有热解碳构成的覆层，则导致了与带有玻璃碳的覆层相比在直到1100℃的高温下对氧和氧自由基的抗性的改善。热解淀积的碳层能够与借助渗透热解淀积的碳结合。这样的结合非常好地附着在石墨上而且非常不可渗透。另外，与简单热解淀积的碳层相比，其具有硬得多的表面且对氧和氧自由基的抗性更好。这样的保持架相应地呈现处对机械应力更大的抗性，并对含氧过程环境下的分解有更好的抗性。
一个实施例提供了主要由石墨或玻璃构成的保持架。优选地，除了覆层之外，它完全由石墨或玻璃构成。所述玻璃尤其可以是石英玻璃。实际中，尤其在半导体元件的生产中，石墨被证明是特别有价值的，因此这种材料是特别优选的。
优选地，覆层被直接设置在保持架的芯材料上。以此方式，可以省略预涂覆或中间涂覆。
优选地，覆层在保持架的整个表面上延伸，从而在保持架的整个表面上都存在对损耗的加大的抗性。如果该保持架以石墨船的方式被实施，则该覆层优选地在石墨船的所有导电表面部分上延伸。
在一个特别优选的配置变形中，所提供的覆层是具有小于25μm的厚度的碳化硅覆层。优选地，该厚度小于10μm，且特别优选地，该厚度具有10μm的最大值和1μm的最小值。在上述最后一种情况下，碳化硅覆层的厚度因而在下限为1μm且上限为10μm的一个区间中变化。已经发现，在具有这样的配置的碳化硅覆层的情况下，保持架的耐损耗性能够得到特别有效的提升。
在一种变形配置中，该保持架以用于汽相淀积装置的船的形式被实施。该汽相淀积装置可以是物理汽相淀积(PVD)或化学汽相淀积(CVD)装置。该船优选地适合于接收硅基底。特别优选地，该船被这样设计，即它适合于在PECVD装置中使用。
在另一个变形实施例中，该保持架以用于RTP炉的基座的形式实施。RTP炉在此应该理解为表示适合于对尤其是半导体基底的物体进行快速热处理的炉。RTP炉经常借助卤灯被加热，并能够使被加热的物体非常快速地被加热。
根据本发明的使用提供了以用于汽相淀积装置的船的形式被实施的一种保持架，该保持架被用作用于等离子体驱动汽相淀积中的基底的保持架。以此方式，由于该保持架具有对含氧处理气体环境的增大的抗性，基底能够以一种成本有效的方式得到涂覆。
该保持架优选地被用于硅基底，且尤其优选地被用于硅太阳能电池基底。以此方式，尤其对于覆层是由碳化硅形成的情况下船的使用，在氮化硅淀积的情况下，能够省略氮化硅预涂覆并能够省略虚设晶圆的使用。该实质性内容已经在上面结合保持架进行了更详细的说明。结果，硅基底或者硅太阳能电池基底能够以一种更加成本有效的方式得到涂覆。
因而，有利的是，在等离子体驱动汽相淀积中，氮化硅或氮氧化硅被淀积在基底上，优选地是氮化硅。尤其是在硅基底或硅太阳能电池基底上的淀积中，以此方式能够实现制造成本的显著减小。
由于含氧处理气体环境中该保持架的损耗抗性的增大，该船可尤其有利地被用于其中至少暂时形成有含氧处理气体环境的那些PEVCD淀积中。尤其是在采用石墨船的情况下，这是有利的，因为能够以此方式减小其损耗。在PEVCD氧化硅淀积中，船的使用因而被证明是有利的。
按照目前的知识，根据本发明的使用所带来的优点，与涂覆是在大体大气压还是在更低压力值下进行无关，与涉及离子还是原子团涂覆类型无关，且与所采用的等离子体频率无关。根据本发明的使用已经被证明在与低于400kHz的等离子体频率相结合时是很有效的，且在与40kHz的等离子体频率结合时是特别优选的，且在与13.56kHz或2.45GHz的等离子体频率结合时是特别优选的。
在根据本发明的用于生产保持架的方法中，借助一种化学汽相淀积在保持架的体材料上淀积作为覆层的碳化硅。
在本申请中，术语“体材料”应该被理解为在施加覆层之前的保持架的构成材料。如果在施加覆层之前的保持架不是由单一材料构成，则术语“体材料”包括了在此时间点保持架的所有构成材料，除了诸如垫片元件或连接元件的接合部分。尤其是包括了可能的预先已经施加的额外覆层。
借助上述方法，能够以成本有效的方式给所述保持架提供覆层。当该保持架被用于CVD装置的时候，尤其是这样的情况。这是由于，在此情况下，所述CVD装置(其可以以例如PECVD装置的形式实施)既可被用来涂覆保持架也可被用来涂覆随后设置在该保持架上的物品。所述物品可以是例如基底。用碳化硅对该保持架的这种涂覆，比外部CVD淀积，显著地更加成本有效。已有的CVD或PECVD装置一般只需要被略微改造，就能够进行该碳化硅淀积。例如，在已经为氮化硅淀积设置的PECVD装置的情况下，只需额外地提供一个甲烷供给装置。
优选地，该覆层被淀积在一种体材料上，该体材料主要且优选地完全由石墨或玻璃构成。这些材料已经在实际中被证明是有价值的并可在许多应用中被用作保持架，尤其是在半导体元件制造的应用中。特别优选的是，主要或完全由石墨构成的一种体材料被涂覆，因为这种材料由于其导电性而通常更适合被用于PECVD装置中。
碳化硅的淀积优选地是借助等离子体驱动汽相淀积进行，或换言之是借助PECVD淀积进行。对该淀积，优选地是在保持架的表面上形成直接等离子体。直接等离子体被形成在一个石墨表面上的情况已经被证明是特别有利的。
对于碳化硅的淀积，可采用利用甲烷和硅烷形成的等离子体。从甲烷和硅烷形成的等离子体被优选地采用。
在一个有利的变形实施例中，淀积的碳化硅被致密化。这可例如借助一种离子轰击来进行，且特别优选地是借助一种等离子体来实现。对此，具有低于400kHz的等离子体频率的低频等离子体已经被证明是特别有效的。
以下结合附图对本发明进行更为详细的说明。在适当的范围内，相同的部件用相同的标号表示。本发明不限于附图所示的实施例，即使在功能特征上也不限于之。以上的描述和以下结合附图的描述包含了众多与本发明有关的特征。然而，上述和以下结合附图描述的这些特征和其他所有特征可被本领域的技术人员单独或结合考虑而形成进一步的组合。尤其是，这些特征在各种情况下可单独或组合地与本发明的保持架和/或方法和/或使用进行适当结合。在附图中：
图1显示了以用于汽相淀积装置的船的形式实施的保持架的示例性实施例的示意图。
图2显示了以用于RTP炉的基座的形式实施的保持架的示例性实施例的示意图。
图3显示了通过根据图2的保持架或通过图1的保持架的示意部分剖视图。
图4显示了根据本发明的方法的一个示例性实施例。
图5显示了根据本发明的使用的一个示例性实施例。
图1显示了以用于汽相淀积装置的船10的形式实施的一种保持架的一个示例性实施例的示意图；该汽相淀积装置在本例中是用于一个PECVD装置的。船10适合于接收尤其是硅太阳能电池基底的硅基底，并以已知的方式包括多个板14a、14b、14c和进一步的板。为了接收硅基底，为每个硅基底设置有三个支撑耳轴16。
在图1所示的示例性实施例中，除了隔离器15之外的船10的体材料包括石墨，在该石墨上直接设置有碳化硅构成的覆层12。也可设置玻璃碳或热解碳而不是碳化硅。
除了被用作分隔器即隔离元件的隔离器15，覆层12在船10的整个表面上延伸并具有1μm至10μm的厚度。
图2以平面示意图的形式显示了以用于RTP炉的基座50的形式实施的保持架的一个示例性实施例。基座50具有在其表面上的由碳化硅构成的覆层52，所述覆层在基座50的整个表面上延伸并具有1μm至10μm的厚度。除了覆层52之外，该基座完全由石墨或玻璃构成。除了用碳化硅构成覆层52之外，也可以用玻璃碳或热解碳形成该覆层。
覆层52被直接设置在由石墨或玻璃以所述方式构成的基座50的体材料上。这将在以下结合图3作更为详细的说明。
图3显示了通过图2的基座50或通过图1的船10的部分剖视示意图。在图1的船10的情况下，图3可显示例如通过板14a的部分截面。图3显示了在所有表面上带有覆层62的体材料60。如果图3被视为通过图1的船10的部分剖视图，则覆层62由图1的碳化硅覆层52构成且体材料60是石墨。另一方面，如果图3被视为通过图2的部分剖视图，则覆层62由碳化硅所构成的覆层52构成且体材料60是石墨或玻璃。在图1至3的示例性实施例中，体材料60在每一种情况下还包括船10或基座50的芯材料。预覆层或中间覆层没有出现。
图4显示了根据本发明的方法的一个示例性实施例的基本视图。在此方法中，首先诸如一个船或一个基座的保持架被引入70到PECVD装置中。随后，利用硅烷或甲烷，在该PECVD装置中的所述保持架的表面上形成72直接等离子体。借助等离子体驱动汽相淀积进行碳化硅淀积74。进一步地，通过离子轰击使淀积的碳化硅被致密化76。为此采用的离子优选地是借助一种低频等离子体产生的等离子体。
图5显示了根据本发明的使用的一个示例性实施例的基本视图。在此情况下，以用于汽相淀积装置的船的形式实施的保持架被装载了硅太阳能电池基底并被引入90到一个PECVD装置中。在所述PECVD装置中，形成92了含氧处理气体环境，其中在本示例性实施例中，在硅太阳能电池基底上形成了一个氮氧化硅层。随后，形成了一个含硅烷或含氮处理气体环境，且在此是一个含氮化硅的层的形式的氮化硅被淀积93在该硅太阳能电池基底上。在图5所示的示例性实施例中，所用的船是图1所示的船10，所述船10被设置有碳化硅构成的覆层12并包括石墨构成的体材料，从而使船10受到碳化硅构成的覆层12的保护以抵抗含氧处理气体环境中的过早损耗。如上所述，在此变形实施例中，可以省略船10的氮化硅预涂覆且类似地可以省略涉及高的材料成本的虚设晶圆的使用。图5的示例性实施例因而使得能够用氮化硅对硅太阳能电池基底进行成本有效的涂覆，该氮化硅例如被作为抗反射覆层。
附图标记列表：
10船
12覆层
14a板
14b板
14c板
15隔离器
16支撑耳轴
50基座
52覆层
60体材料
62覆层
70把保持架引入PECVD装置
72利用硅烷和甲烷形成等离子体
74碳化硅的汽相淀积
76利用借助等离子体的离子轰击对碳化硅进行致密化
90把船装载上硅太阳能电池基底并引入PECVD装置
92形成含氧处理气体环境并淀积氮化硅
93形成含硅烷和含氮的处理气体环境并淀积氮化硅

Claims (16)

1.一种保持架(10；50)，其特征在于保持架(10；50)的表面上具有由碳化硅、玻璃碳或热解碳构成的覆层(12；52)。
2.根据权利要求1所述的保持架(10；50)，其特征在于所述保持架(10；50)除了覆层(12；52)之外主要由石墨或玻璃构成，优选地完全由石墨或玻璃构成。
3.根据前述任何一项权利要求所述的保持架(10；50)，其特征在于覆层(62)被直接设置在保持架(10；50)的芯材料(60)上。
4.根据前述任何一项权利要求所述的保持架(10；50)，其特征在于所述覆层在保持架(50)的整个表面上延伸。
5.根据前述任何一项权利要求所述的保持架，其特征在于所提供的覆层(12；52)是碳化硅覆层，该碳化硅覆层具有小于25μm的厚度，优选地是具有小于10μm的厚度，且特别优选地是具有最大值为10μm且最小值为1μm的厚度。
6.根据前述任何一项权利要求所述的保持架(10)，其特征在于所述保持架(10)以用于汽相淀积装置的船(10)的形式被实施，所述船优选地适合于接收硅基底。
7.根据权利要求1－5中的任何一项所述的保持架(50)，其特征在于所述保持架(50)以用于RTP炉的基座(50)的形式被实施。
8.根据权利要求6所述的船(10)作为保持架(10)在等离子体驱动汽相淀积中的使用(90，92)，所述保持架(10)是用于基底的，优选地是用于硅基底的，且特别优选地是用于硅太阳能电池基底的。
9.根据权利要求8的使用(90，92)，其特征在于在所述等离子体驱动汽相淀积中在所述基底上淀积(92)氧化硅、氮氧化硅或氮化硅，优选地是淀积氮化硅。
10.根据权利要求8和9之一所述的使用(90，92)，其特征在于在所述等离子体驱动汽相淀积中至少暂时地形成(92)一种含氧处理气体环境。
11.用于生产如权利要求1至7中的任何一项所述的保持架(10；52)的方法，其特征在于借助化学汽相淀积(14)在所述保持架(10；50)的体材料(60)上淀积(14)作为覆层(12；52，62)的碳化硅。
12.根据权利要求11所述的方法，其特征在于所述覆层(12；52；62)被淀积(14)在主要且优选地完全由石墨或玻璃构成的体材料(60)上。
13.根据权利要求11和12之一所述的方法，其特征在于所述淀积(14)是借助等离子体驱动汽相淀积进行的。
14.根据权利要求13所述的方法，其特征在于用于所述淀积(14)的等离子体以在所要涂覆的保持架(10；52)的表面上的直接等离子体的形式实施。
15.根据权利要求13和14之一所述的方法，其特征在于利用甲烷和硅烷所形成的等离子体被用于所述淀积(14)。
16.根据权利要求11至15中的任何一项所述的方法，其特征在于淀积的碳化硅被致密化(16)，优选地借助离子轰击且特别优选地借助等离子体。
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