TW201509871A - 一種容置裝置，製造方法，及其用途 - Google Patents

一種容置裝置，製造方法，及其用途 Download PDF

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TW201509871A
TW201509871A TW103119661A TW103119661A TW201509871A TW 201509871 A TW201509871 A TW 201509871A TW 103119661 A TW103119661 A TW 103119661A TW 103119661 A TW103119661 A TW 103119661A TW 201509871 A TW201509871 A TW 201509871A
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accommodating device
coating
plasma
vapor deposition
accommodating
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Hans-Peter Voelk
Alexander Piechulla
Ulrich Walk
Jens-Uwe Fuchs
Dieter Zernickel
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Centrotherm Photovoltaics Ag
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Abstract

本發明係關於一種容置裝置(10；50)，其製造方法，及用途。該容置裝置係藉由電漿輔助型化學氣相沉積而於其表面具有一塗層(12；52)，其包含：碳化矽、玻璃碳、或熱分解碳。

Description

一種容置裝置，製造方法，及其用途
本發明係關於一種容置裝置，製造方法，及其用途。
半導體組件，尤其是矽太陽能電池，通常利用電漿輔助型化學氣相沉積法來製造，此方法在英文稱為,,Plasma-enhanced chemical vapor deposition“(簡稱PECVD沉積)。在此，待塗佈處理的半導體基板通常被置入容置裝置內部。PECVD沉積一般係利用所謂的晶舟作為容置裝置。
在工業上製造矽太陽能電池時，通常矽太陽能電池基板被安排在該晶舟內部，部份亦被稱為PECVD晶舟，且在一PECVD沉積範圍具有一氮化矽抗反射塗層。然而均勻的抗反射塗層只能在所使用的晶舟事先已具有一氮化矽塗層才能獲得。因此，所使用的晶舟通常在配置於晶舟內部的太陽能電池基板進行氮化矽塗層處理前，會在所謂的氮化矽摻雜前處理範圍利用氮化矽進行塗佈處理。晶舟之材料通常係為石墨。氮化矽摻雜前處理之需求係可能因石墨矽太陽能電池基板之表面電阻不相同。然而也有可能由 於晶舟材料的孔隙或其微粒特性在形態上或化學上等原因。然而其原因目前尚未有定論。
由於氮化矽具電氣絕緣功能可作為介電質，而且氮化矽在矽太陽能電池基板上的PECVD沉積需要在晶舟與在其內部設置的矽太陽能電池基板有導電接觸。因此，在氮化矽摻雜前處理時，在矽太陽能電池基板與晶舟接觸的區域不能進行氮化矽摻雜處理。該區域通常在氮化矽摻雜前處理時將設置在其內部的矽基板作為擋片(Dummy-Wafer)以及在該區域在固定凸緣上進行氮化矽沉積或由晶舟表面為擋片覆蓋的片段來阻擋。該固定凸緣在此係指在晶舟表面上支撐矽太陽能電池基板的凸出物。該固定凸緣主要具有導電功能，因為在氮化矽沉積時矽基板通常不是有充分的表面與該晶舟貼合。
若在進行PECVD沉積時使用含氧氣體，例如在使用笑氣或一氧化氮作為製程氣體情形，則在進行氮化矽摻雜前處理時無法避免晶舟受到擋片屏蔽的區域而裂解。這同樣適用於其他容置裝置，例如在所謂的快速熱處理爐(RFT Oven)裝置之基座。上述在含氧製程氣氛內的裂解會導致使用的容置裝置的磨損。
因此，本發明的主要目的是提供一種容置裝置，該容置裝置在含氧製程氣氛具有一較佳的耐磨損特性。
採用具有申請專利範圍第1項的特徵之容置裝置即可達到上述目的。
本發明的另一目的是係提供一種節省成本用途之基板塗層。
採用本發明具有申請專利範圍第8項所揭示之特徵的容置裝置即可達到上述目的。
本發明的另外一個目的是提出一種節省成本之容置裝置之方法。
採用具有申請專利範圍第11項的特徵的方法即可達到上述目的。
本發明之申請專利範圍之附屬項所揭示之內容係為本發明各種改良。
根據本發明的容置裝置其表面具有一塗層(12；52)，其包含：碳化矽、玻璃碳、或熱分解碳。利用此種塗佈的容置裝置可實現在含氧製程氣氛中提高耐磨損特性，尤其是在形成含氧製程氣氛使用笑氣亦或一氧化氮作為製程氣體之狀況。
上述塗層材料原則上可使用任何習知之材料。例如玻璃碳首先可將待塗佈之物體浸泡於混合酚樹脂粉末之酒精浴中而進行塗佈，然後將塗佈後之物體加熱到至少600℃的溫度。在該方法中，尤以待塗佈處理之物體係為石墨時成效卓著。
根據本發明之一實施例係以碳化矽作為該塗層。碳化矽相較於氫氟酸(hvdrofluoric acid)具有較佳的耐磨特性。在大多數情形因而很少需要碳化矽塗層後處理。因為碳化矽能良好附著於石墨上，因此，普遍地被應用於半 導體技術的容置裝置的材料。此外，發現具有碳化矽塗層的石墨體具有類似矽太陽能電池基板的表面電阻。這使得以PECVD方法在矽太陽能電池基板上進行沉積的塗層特性有正面的影響。然而，石墨的形態上或化學上的原因或孔隙或微粒特性在此扮演一很重要的角色。無論如何發現，前述的碳化矽塗佈的容置裝置，尤其是碳化矽塗佈的晶舟，其氮化矽摻雜前處理可以省略而不致於影響應用此類一容置裝置沉積的氮化矽塗層(例如一抗反射塗層)其相關範圍的均勻性。由於碳化矽具導電功能，因而不需要上述的擋片。在工業上製造矽太陽能電池時需要一擋片，這是一個不可忽視的成本因素，因而使用依據本發明的容置裝置與可以省略而且不需要利用擋片即能降低其製造成本。
在此，碳化矽或一碳化矽塗層係指所使用的材料或有關的塗層主要是由碳化矽形成。它不要求材料的完全純度。邊界面的不純物質或異物或其他物質等實際上不可避免存在。
如果依據本發明的容置裝置被應用在氮化矽沉積時，在所使用的容置裝置上亦會被氮化矽沉積。於某些數量的沉積後容置裝置的氮化矽部份會裂開脫落，因而會影響氮化矽塗層的品質，而且會沉積在設在容置裝置內的物體上。因此，氮化矽沉積裝置的容置裝置通常在某一數量的沉積後需進行蝕刻後處理。實驗證明，應用依據本發明的一個容置裝置在需要進行下一個蝕刻製程前，其可能的沉積量相較於習知的容置裝置可被提高，尤其是在具 有一碳化矽塗層的容置裝置。容置裝置在需要進行次一蝕刻過程前若具有較大氮化矽沉積量能夠降低應用在工業上之製造成本，例如用於製造太陽能電池之用途。
如果容置裝置具有一熱分解碳塗層時，則相較於一玻璃碳塗層其耐高溫可達1100℃，因而於對抗氧氣與氧自由基具有一較佳的抗阻。一熱分解碳塗層能滲入而與熱分解沉積碳結合。此類的結合能良好而且非常緊密地與石墨結合。此外，相較於一簡單的熱解碳塗層，其具有一明顯較硬的表面而且對抗氧氣與氧自由基具有一較佳的抗阻。此類的容置裝置相較於機械應力更耐磨損而且相較於在一含氧加工環境內之裂解具有較佳的阻抗。
根據本發明的進一步實施方式，該容置裝置主要是由石墨或玻璃構成。較佳地，除了塗層外係完全由石墨或玻璃構成。該玻璃尤其係涉及石英玻璃。實際上，尤其是在製造半導體組件方面，利用石墨尤其成效卓著，因而使用這些材料特別有益。
該塗層係較優直接塗佈配置於該容置裝置中之一母材上。以此方法能省略預塗佈或期間塗佈的製程。
根據本發明的之另一一實施例，該塗層係延伸經過容置裝置之整個表面，裨能使該容置裝置之整個表面都能獲得較高的耐磨損特性。在容置裝置作為右墨晶舟之狀況下，該塗層優選地係延伸所有導電表面部分之石墨晶舟。
根據本發明的一特別有利之實施方式，該塗層 中之一碳化矽塗層之厚度小於25μm，較佳地係小於10μm，更佳地，係介於10μm至1μm之間。在後者的狀況下，其碳化矽塗層厚度具有差異而且係在一1μm下限值與一10μm上限值範圍。實驗證明，具有此類結構的碳化矽塗層的容置裝置其耐磨損特性尤能有效地提高。
根據本發明的另外一種實施方式，該容置裝置可作為氣相沉積裝置之晶舟結構。該氣相沉積裝置可為一物理氣相沉積(physical vapour deposition-PVD)或一化學氣相沉積(chemical vapour deposition-CVD)裝置。較佳地，該晶舟係用於容置矽基板之用途。更佳地該晶舟在設計上適用於PECVD裝置。
根據本發明的另一種實施例，該容置裝置可作為快速熱處理爐之基座，尤指適用於熱處理半導體基板。快速熱處理爐通常利用鹵素燈加熱而且能快速地加熱物體。
本發明之用途係為提供氣相沉積裝置作為晶舟用途之容置裝置，藉由一電漿輔助型化學氣相沉積製程而作為基板之容置裝置。利用此方式可節省基板的塗佈費用，因為該容置裝置備有含氧製程氣氛具有較高的耐磨損特性。
根據本發明的之一實施方式，該容置裝置可應用在矽基板較佳地係用於矽太陽能電池基板。以此方式，尤其是應用在晶舟的具有碳化矽塗層結構情形，在進行氮化矽沉積時，能省去氮化矽摻雜前處理而且不必使用擋片。 此事實在上述有關容置裝置已有進一步說明，因而矽基板或矽太陽能電池基板能節省費用地進行塗佈。
因此，根據本發明之一種實施方式，在進行電漿輔助型化學氣相沉積時，可利用氮化矽或氮氧化矽在基板上沉積，較佳地係利用氮化矽。尤其於矽基板或矽太陽能電池基板的沉積，以此方式能明顯地降低製造成本。
由於容置裝置在一含氧製程氣氛具有較高的耐磨損特性，晶舟尤其有利地可被應用至少短暫於具有一含氧製程氣氛的PECVD沉積。尤以石墨晶舟之應用具有優點，因為以此方式能減少磨損。因此，在PECVD矽氧化物沉積中證實使用該晶舟係為有利。
依據本發明的應用的優點在於，依據現有的知識領域，它可被應用在無論該塗層是否係在一約大氣壓力或較少的壓力值下進行，無論是否涉及一離子或自由基塗層而且也無論所使用的電漿頻率。尤其成效卓著是，依據本發明的應用一具體電漿頻率係小於400kHz而且尤其是應用一具體電漿頻率40kHz以及應用一具體電漿頻率13,56kHz或2,45GHz。。
根據本發明的一種容置裝置的有利的製造方法，其係在容置裝置之體積材料上利用化學氣相沉積法進行碳化矽塗層處理。
在此所謂的體積材料主要係指容置裝置塗佈塗層前的材料。如果容置裝置在進行塗層前係由單一材料構成時，則該體積材料的定義是指容置裝置當時的整體材 料，但是組裝元件除外，例如間隔元件或結合元件。尤其是可能包括先前已經塗佈的輔助塗層。
根據所述的方法該容置裝置能節省費用地進行塗層處理。特別是如果該容置裝置係應用在一CVD裝置時。因為在此情形，該CVD裝置，例如能充當PECVD裝置，在設計上不但可供容置裝置的塗層用途而且可供之後配置於該容置裝置內之物體之塗層用途。該物體例如可以是基板。此種利用碳化矽進行容置裝置的塗層處理主要能節省費用作為一外部的CVD沉積。現有的CVD裝置或PECVD裝置通常只需稍為改裝而能進行碳化矽沉積處理即可。在一現有的專供氮化矽沉積而設置的PECVD裝置，例如僅需添加一甲烷供氣裝置即可。
根據本發明的一種有利的實施方式，該塗層係在一體積材料上被沉積，而且該體積材料主要是，特別是完全由石墨或玻璃構成。這些材料實際上成效卓著而且能在許多用途被使用充當容置裝置，尤其是應用於半導體組件製造方面。特別有利的是主要是或完全是由石墨組成的體積材料塗層，因為該材料由於其導電性通常更適合使用在PECVD裝置。
碳化矽沉積有利的是利用一電漿輔助型化學氣相沉積或換句話說利用一PECVD沉積。有利地該沉積可在容置裝置的表面上形成一直接電漿。在此證明尤其有利的是該直接電漿在係於石墨表面上形成。
至於碳化矽的沉積可利用以甲烷與甲矽烷形 成的電漿。有利的是利用甲烷與甲矽烷形成的電漿。
根據本發明的一種有利的實施方式，該沉積的碳化矽係可壓縮處理。在此，例如可利用一離子轟擊而且特別有利的是利用一電漿來實施。尤其成效卓著的是在此係利用一低頻電漿而且其電漿頻率係小於400kHz。
以下配合圖式對本發明的內容作進一步的說明。在以下圖式中，相同或相同作用的元件均以相同的元件符號標示。以下所述僅為舉例性，而非為限制性者，而且其功能特性也不受限制。任何並不悖離本發明的精神與範疇，而對其進行的等效修改或變更，均應包含於後附的申請專利範圍中。此外應注意，本發明所說明的各種不同的具體實施例以及如示意圖所示的可行的變化實施例可以隨意彼此加以組合。在此，個別的或多數的特徵可以隨意彼此互換。這些特徵組合也是屬於本發明的容置裝置亦或方法亦或用途所揭露的範圍。
10‧‧‧晶舟
12‧‧‧塗層
14a‧‧‧板子
14b‧‧‧板子
14c‧‧‧板子
15‧‧‧絕緣體
16‧‧‧固定凸緣
50‧‧‧基座
52‧‧‧塗層
60‧‧‧體積材料
62‧‧‧塗層
70‧‧‧在PECVD裝置內安裝容置裝置
72‧‧‧利用甲矽烷與甲烷而作為電漿用途
74‧‧‧實施碳化矽氣相沉積
76‧‧‧經由電漿產生之離子轟擊而壓縮碳化矽
90‧‧‧晶舟裝載矽太陽能電池基板後置入PECVD裝置中
92‧‧‧形成含氧製程氣氛與氮化矽沉積
93‧‧‧形成含甲矽烷與含氮製程氣氛與氮化矽沉積
第1圖：本發明方法之容置裝置作為晶舟用於氣相沉積裝置之一實施例示意圖；第2圖：本發明之容置裝置作為快速熱處理爐(RFT Oven)之基座之一實施例示意圖；第3圖：依據本發明第2圖或第1圖所示的容置裝置的部份截面示意圖；第4圖：依據本發明的方法的一個實施例； 第5圖：本發明的應用的一個實施例圖2係本發明一較佳實施例之。
第1圖係本發明方法揭示之容置裝置作為晶舟10用於氣相沉積裝置，尤指一PECVD裝置之一實施例。該晶舟10適合固定矽基板，特別是矽太陽能電池基板，而且係以習知方式由多數板子14a，14b，14c以及其它板子組合而成。為了固定矽基板目的每一個矽基板分別具有三個固定凸緣16。
晶舟10的體積材料如第1圖的實施例所示，除了絕緣體15外，係石墨材質製成而且在其表面直接塗佈一碳化矽塗層12。該碳化矽塗層亦可由玻璃碳或熱分解碳塗層來取代。
除了充當間隔元件與因而充當定距元件所使用的絕緣體15外，該塗層12係延伸通過晶舟10的整個表面而且具有介於1μm與10μm的厚度。
第2圖係本發明充當快速加熱爐的容置裝置的基座50的一個實施例的示意圖。該基座50在其表面上具有一碳化矽塗層12，其中該碳化矽塗層係延伸通過基座52的整個表面而且具有介於1μm與10μm的厚度。除了塗層52以外，該基座完全係由右墨或玻璃製成。該碳化矽塗層52亦可由玻璃碳或熱分解碳塗層來取代。
該塗層52係直接塗佈在基座50的一個由石墨或玻璃材質製成的體積材料上。其結構將如下述利用第3 圖來進一步說明。
第3圖係依據本發明第2圖所示的基座50或第1圖所示的晶舟10的部份截面示意圖。在如第1圖所示的晶舟10的情形，第3圖例如可能透過板子14a的部份截面圖來表示。如第3圖所示係一體積材料60，在其整個表面上具有一塗層62。如果第3圖的部份截面圖係表示第1圖的晶舟10時，則該塗層62係表示第1圖的碳化矽塗層52而且該體積材料60係石墨。如果第3圖的部份截面圖係表示第2圖時，則該塗層62係表示碳化矽塗層52而且該源材料60係石墨或玻璃。根據第1圖至第3圖所示的實施例該體積材料60分別亦表示晶舟10或基座的母材。不存在前處理或其間處理的塗層。
第4圖係依據本發明的方法的一個實施例。依據本方法首先係將一容置裝置，例如一晶舟或一基座導入一PECVD裝置內70。然後在PECVD裝置內利用甲矽烷與甲烷在容置裝置的一個表面上形成一直接電漿72。接下來利用電漿輔助型化學氣相沉積法進行碳化矽沉積74。此外，該沉積過的碳化矽可透過離子轟擊而壓縮76。在此所使用的離子尤其是利用一低頻率電漿產生電漿。
第5圖係本發明的應用的一個實施例。在此，氣相沉積裝置一充當晶舟的容置裝置係裝載矽太陽能電池基板而且被導入一PECVD裝置內90。在該PECVD裝置內將會形成一含氧製程氣氛92而且在本實施例，在矽太陽能電池基板上將會形成一氮氧化矽塗層。此外將形成一含甲 矽烷與含氮的製程氣氛而且在此該矽太陽能電池基板將會形成一氮化矽層93。根據第5圖所示的實施例，該如第1圖所示的晶舟10具有一碳化矽塗層12以及具有一石墨材質的體積材料，裨該晶舟10能對抗先前的磨損在含氧製程氣氛受到碳化矽塗層12的保護。如上所述，利用此實施變化不但能省去晶舟10的氮化矽摻雜前處理製程而且可免除使用擋片的材料費用。根據第5圖的實施例因而能節省費用利用氮化矽進行矽太陽能電池基板的塗層，例如充當抗反射塗層。
上述實施例僅係為了方便說明而舉例而已，本發明所主張之權利範圍自應以申請專利範圍所述為準，而非僅限於上述實施例。
10‧‧‧晶舟
12‧‧‧塗層
14a‧‧‧板子
14b‧‧‧板子
14c‧‧‧板子
15‧‧‧絕緣體
16‧‧‧固定凸緣

Claims (16)

  1. 一種容置裝置(10；50)，其中，該容置裝置(10；50)之表面上具有一塗層(12；52)，其包含：碳化矽、玻璃碳、或熱分解碳。
  2. 如申請專利範圍第1項所述之容置裝置(10；50)，其特徵在於，該容置裝置(10；50)除了該塗層(12；52)外，特別是完全係主要是由石墨或玻璃所組成。
  3. 如前述申請專利範圍中任一項之容置裝置(10；50)，其特徵在於，該塗層(62)係配置於該容置裝置(10；50)之一母材(60)上。
  4. 如前述申請專利範圍中任一項之容置裝置(10；50)，其特徵在於，該塗層係延伸通過該容置裝置(50)之整個表面。
  5. 如前述申請專利範圍中任一項之容置裝置，其特徵在於為，該塗層(12；52)中之一碳化矽塗層之厚度小於25μm，較佳地係小於10μm，更佳地，係介於10μm至1μm之間。
  6. 如前述申請專利範圍中任一項之容置裝置(10)，其特徵在於，該容置裝置(10)係為一作晶舟(10)，其係用於氣相沉積，尤指作為容置一矽基板。
  7. 如申請專利範圍第1項至第5項任一項所述之容置裝置(50)，其特徵在於，該容置裝置(50)係作為快速熱處理爐(RFT Oven)之基座(50)。
  8. 如申請專利範圍第6項所述之該晶舟(10)之用途，係於電漿輔助型化學氣相沉積製程中中基板之容置裝置(10)，較佳地，作為矽基板之容置裝置(10)(90，92)，更佳地，係 作為矽太陽能電池基板之容置裝置(10)。
  9. 如申請專利範圍第8項所述之用途(90，92)，其特徵在於，在電漿輔助型化學氣相沉積係由矽氧化物、氮氧化矽、或矽氮化物於基板上進行沉積(92)，其中，尤指矽氮化物。
  10. 如申請專利範圍第8項至第9項任一項所述之用途(90，92)，其特徵在於，於電漿輔助型化學氣相沉積時至少形成一含氧製程氣氛(92)。
  11. 如申請專利範圍第1項至第7項中任一項所述之的容置裝置(10；52)之製作方法，其特徵在於，以一化學氣相沉積(14)處理於該容置裝置(10；50)之一體積材料(60)上沉積(14)一由碳化矽所組成之塗層(12；52，62)。
  12. 如申請專利範圍第11項所述之方法，其特徵在於，於該體積材料(60)上沉積(14)而形成之該塗層(12；52；62)其中，該體積材料係由石墨或玻璃所組成。
  13. 如申請專利範圍第11項至第12項中任一項所述之方法，其特徵在於，該沉積(14)係由該電漿輔助型化學氣相沉積方法所進行。
  14. 如申請專利範圍第13項所述之方法，其特徵在於，該沉積(14)所用之電漿係指於該容置裝置(10；52)之一表面上塗佈形成之一直接電漿。
  15. 如申請專利範圍第13項至第14項中任一項所述之方法，其特徵在於，該沉積(14)係使用由甲烷與甲矽烷所形成(12)之電漿。
  16. 如申請專利範圍第11項至第15項中任一項所述之方法，其特徵在於，該經沉積之碳化矽之壓縮(16)，係藉由離子撞擊，尤指一電漿手段。
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