TWI541970B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI541970B
TWI541970B TW103107900A TW103107900A TWI541970B TW I541970 B TWI541970 B TW I541970B TW 103107900 A TW103107900 A TW 103107900A TW 103107900 A TW103107900 A TW 103107900A TW I541970 B TWI541970 B TW I541970B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
cnt
carbon nanotube
layer
catalyst layer
Prior art date
Application number
TW103107900A
Other languages
English (en)
Chinese (zh)
Other versions
TW201508891A (zh
Inventor
斎藤達朗
和田真
磯林厚伸
梶田明広
宮崎久生
酒井忠司
Original Assignee
東芝股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝股份有限公司 filed Critical 東芝股份有限公司
Publication of TW201508891A publication Critical patent/TW201508891A/zh
Application granted granted Critical
Publication of TWI541970B publication Critical patent/TWI541970B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4462—Carbon or carbon-containing materials, e.g. graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0554—Manufacture or treatment of conductive parts of the interconnections of nanotubes or nanowires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/754—Dendrimer, i.e. serially branching or "tree-like" structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
TW103107900A 2013-08-29 2014-03-07 半導體裝置及其製造方法 TWI541970B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013178713A JP5951568B2 (ja) 2013-08-29 2013-08-29 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW201508891A TW201508891A (zh) 2015-03-01
TWI541970B true TWI541970B (zh) 2016-07-11

Family

ID=52582071

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103107900A TWI541970B (zh) 2013-08-29 2014-03-07 半導體裝置及其製造方法

Country Status (3)

Country Link
US (1) US8981561B1 (https=)
JP (1) JP5951568B2 (https=)
TW (1) TWI541970B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6129772B2 (ja) * 2014-03-14 2017-05-17 株式会社東芝 半導体装置及び半導体装置の製造方法
JP6330415B2 (ja) * 2014-03-27 2018-05-30 富士通株式会社 半導体装置の製造方法
JP6181224B1 (ja) 2016-03-04 2017-08-16 株式会社東芝 グラフェン配線構造とその作製方法
JP6717056B2 (ja) * 2016-05-30 2020-07-01 株式会社Ihi 可飽和吸収素子の製造方法及び部材
KR102350640B1 (ko) * 2019-07-29 2022-01-14 에스케이하이닉스 주식회사 반도체 장치 및 이의 제조 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
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JP3953276B2 (ja) * 2000-02-04 2007-08-08 株式会社アルバック グラファイトナノファイバー、電子放出源及びその作製方法、該電子放出源を有する表示素子、並びにリチウムイオン二次電池
JP3634781B2 (ja) * 2000-09-22 2005-03-30 キヤノン株式会社 電子放出装置、電子源、画像形成装置及びテレビジョン放送表示装置
JP3768908B2 (ja) * 2001-03-27 2006-04-19 キヤノン株式会社 電子放出素子、電子源、画像形成装置
JP3768937B2 (ja) * 2001-09-10 2006-04-19 キヤノン株式会社 電子放出素子、電子源及び画像表示装置の製造方法
US20100244262A1 (en) * 2003-06-30 2010-09-30 Fujitsu Limited Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same
JP3944155B2 (ja) * 2003-12-01 2007-07-11 キヤノン株式会社 電子放出素子、電子源及び画像表示装置の製造方法
US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
JP4167212B2 (ja) * 2004-10-05 2008-10-15 富士通株式会社 カーボンナノチューブ構造体、半導体装置、および半導体パッケージ
JP4596878B2 (ja) * 2004-10-14 2010-12-15 キヤノン株式会社 構造体、電子放出素子、２次電池、電子源、画像表示装置、情報表示再生装置及びそれらの製造方法
DE102007050843A1 (de) * 2006-10-26 2008-05-21 Samsung Electronics Co., Ltd., Suwon Integrierte Schaltung mit Kohlenstoffnanoröhren und Verfahren zu deren Herstellung unter Verwendung von geschützten Katalysatorschichten
FR2910706B1 (fr) * 2006-12-21 2009-03-20 Commissariat Energie Atomique Element d'interconnexion a base de nanotubes de carbone
JP5181512B2 (ja) * 2007-03-30 2013-04-10 富士通セミコンダクター株式会社 電子デバイスの製造方法
KR100827524B1 (ko) * 2007-04-06 2008-05-06 주식회사 하이닉스반도체 반도체 소자의 제조 방법
WO2010023720A1 (ja) * 2008-08-25 2010-03-04 株式会社 東芝 構造体、電子装置及び構造体の形成方法
US8518542B2 (en) * 2009-05-26 2013-08-27 Life Technology Research Institute, Inc. Carbon film and carbon film structure
JP2011061026A (ja) * 2009-09-10 2011-03-24 Toshiba Corp カーボンナノチューブ配線及びその製造方法
JP2011204769A (ja) 2010-03-24 2011-10-13 Toshiba Corp 半導体装置及びその製造方法
JP2011238726A (ja) * 2010-05-10 2011-11-24 Toshiba Corp 半導体装置及びその製造方法
JP2012038888A (ja) * 2010-08-06 2012-02-23 Toshiba Corp 半導体装置およびその製造方法
JP5468496B2 (ja) * 2010-08-25 2014-04-09 株式会社東芝 半導体基板の製造方法
US20130072077A1 (en) * 2011-09-21 2013-03-21 Massachusetts Institute Of Technology Systems and methods for growth of nanostructures on substrates, including substrates comprising fibers
JP5591784B2 (ja) * 2011-11-25 2014-09-17 株式会社東芝 配線及び半導体装置

Also Published As

Publication number Publication date
JP5951568B2 (ja) 2016-07-13
TW201508891A (zh) 2015-03-01
US20150061131A1 (en) 2015-03-05
JP2015050209A (ja) 2015-03-16
US8981561B1 (en) 2015-03-17

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