JP5951568B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5951568B2
JP5951568B2 JP2013178713A JP2013178713A JP5951568B2 JP 5951568 B2 JP5951568 B2 JP 5951568B2 JP 2013178713 A JP2013178713 A JP 2013178713A JP 2013178713 A JP2013178713 A JP 2013178713A JP 5951568 B2 JP5951568 B2 JP 5951568B2
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JP
Japan
Prior art keywords
carbon nanotube
cnt
groove
semiconductor device
layer
Prior art date
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Active
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JP2013178713A
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English (en)
Japanese (ja)
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JP2015050209A (ja
JP2015050209A5 (https=
Inventor
達朗 斎藤
達朗 斎藤
和田　真
真 和田
厚伸 磯林
厚伸 磯林
明広 梶田
明広 梶田
久生 宮崎
久生 宮崎
酒井　忠司
忠司 酒井
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2013178713A priority Critical patent/JP5951568B2/ja
Priority to TW103107900A priority patent/TWI541970B/zh
Priority to US14/202,683 priority patent/US8981561B1/en
Publication of JP2015050209A publication Critical patent/JP2015050209A/ja
Publication of JP2015050209A5 publication Critical patent/JP2015050209A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4462—Carbon or carbon-containing materials, e.g. graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0554—Manufacture or treatment of conductive parts of the interconnections of nanotubes or nanowires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/754—Dendrimer, i.e. serially branching or "tree-like" structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2013178713A 2013-08-29 2013-08-29 半導体装置及びその製造方法 Active JP5951568B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013178713A JP5951568B2 (ja) 2013-08-29 2013-08-29 半導体装置及びその製造方法
TW103107900A TWI541970B (zh) 2013-08-29 2014-03-07 半導體裝置及其製造方法
US14/202,683 US8981561B1 (en) 2013-08-29 2014-03-10 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013178713A JP5951568B2 (ja) 2013-08-29 2013-08-29 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2015050209A JP2015050209A (ja) 2015-03-16
JP2015050209A5 JP2015050209A5 (https=) 2015-10-01
JP5951568B2 true JP5951568B2 (ja) 2016-07-13

Family

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Family Applications (1)

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JP2013178713A Active JP5951568B2 (ja) 2013-08-29 2013-08-29 半導体装置及びその製造方法

Country Status (3)

Country Link
US (1) US8981561B1 (https=)
JP (1) JP5951568B2 (https=)
TW (1) TWI541970B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6129772B2 (ja) * 2014-03-14 2017-05-17 株式会社東芝 半導体装置及び半導体装置の製造方法
JP6330415B2 (ja) * 2014-03-27 2018-05-30 富士通株式会社 半導体装置の製造方法
JP6181224B1 (ja) 2016-03-04 2017-08-16 株式会社東芝 グラフェン配線構造とその作製方法
JP6717056B2 (ja) * 2016-05-30 2020-07-01 株式会社Ihi 可飽和吸収素子の製造方法及び部材
KR102350640B1 (ko) * 2019-07-29 2022-01-14 에스케이하이닉스 주식회사 반도체 장치 및 이의 제조 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3953276B2 (ja) * 2000-02-04 2007-08-08 株式会社アルバック グラファイトナノファイバー、電子放出源及びその作製方法、該電子放出源を有する表示素子、並びにリチウムイオン二次電池
JP3634781B2 (ja) * 2000-09-22 2005-03-30 キヤノン株式会社 電子放出装置、電子源、画像形成装置及びテレビジョン放送表示装置
JP3768908B2 (ja) * 2001-03-27 2006-04-19 キヤノン株式会社 電子放出素子、電子源、画像形成装置
JP3768937B2 (ja) * 2001-09-10 2006-04-19 キヤノン株式会社 電子放出素子、電子源及び画像表示装置の製造方法
US20100244262A1 (en) * 2003-06-30 2010-09-30 Fujitsu Limited Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same
JP3944155B2 (ja) * 2003-12-01 2007-07-11 キヤノン株式会社 電子放出素子、電子源及び画像表示装置の製造方法
US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
JP4167212B2 (ja) * 2004-10-05 2008-10-15 富士通株式会社 カーボンナノチューブ構造体、半導体装置、および半導体パッケージ
JP4596878B2 (ja) * 2004-10-14 2010-12-15 キヤノン株式会社 構造体、電子放出素子、２次電池、電子源、画像表示装置、情報表示再生装置及びそれらの製造方法
DE102007050843A1 (de) * 2006-10-26 2008-05-21 Samsung Electronics Co., Ltd., Suwon Integrierte Schaltung mit Kohlenstoffnanoröhren und Verfahren zu deren Herstellung unter Verwendung von geschützten Katalysatorschichten
FR2910706B1 (fr) * 2006-12-21 2009-03-20 Commissariat Energie Atomique Element d'interconnexion a base de nanotubes de carbone
JP5181512B2 (ja) * 2007-03-30 2013-04-10 富士通セミコンダクター株式会社 電子デバイスの製造方法
KR100827524B1 (ko) * 2007-04-06 2008-05-06 주식회사 하이닉스반도체 반도체 소자의 제조 방법
WO2010023720A1 (ja) * 2008-08-25 2010-03-04 株式会社 東芝 構造体、電子装置及び構造体の形成方法
US8518542B2 (en) * 2009-05-26 2013-08-27 Life Technology Research Institute, Inc. Carbon film and carbon film structure
JP2011061026A (ja) * 2009-09-10 2011-03-24 Toshiba Corp カーボンナノチューブ配線及びその製造方法
JP2011204769A (ja) 2010-03-24 2011-10-13 Toshiba Corp 半導体装置及びその製造方法
JP2011238726A (ja) * 2010-05-10 2011-11-24 Toshiba Corp 半導体装置及びその製造方法
JP2012038888A (ja) * 2010-08-06 2012-02-23 Toshiba Corp 半導体装置およびその製造方法
JP5468496B2 (ja) * 2010-08-25 2014-04-09 株式会社東芝 半導体基板の製造方法
US20130072077A1 (en) * 2011-09-21 2013-03-21 Massachusetts Institute Of Technology Systems and methods for growth of nanostructures on substrates, including substrates comprising fibers
JP5591784B2 (ja) * 2011-11-25 2014-09-17 株式会社東芝 配線及び半導体装置

Also Published As

Publication number Publication date
TW201508891A (zh) 2015-03-01
TWI541970B (zh) 2016-07-11
US20150061131A1 (en) 2015-03-05
JP2015050209A (ja) 2015-03-16
US8981561B1 (en) 2015-03-17

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