JP6181224B1 - グラフェン配線構造とその作製方法 - Google Patents
グラフェン配線構造とその作製方法 Download PDFInfo
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- RCJVRSBWZCNNQT-UHFFFAOYSA-N dichloridooxygen Chemical compound ClOCl RCJVRSBWZCNNQT-UHFFFAOYSA-N 0.000 claims description 4
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- 239000011701 zinc Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
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- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
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- 229910052725 zinc Inorganic materials 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
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- 239000005977 Ethylene Substances 0.000 description 1
- 229910003771 Gold(I) chloride Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- 229910015275 MoF 6 Inorganic materials 0.000 description 1
- 229910019800 NbF 5 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910018287 SbF 5 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
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- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910021392 nanocarbon Inorganic materials 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/851—Organic superconductors
- H10N60/853—Fullerene superconductors, e.g. soccer ball-shaped allotropes of carbon, e.g. C60 or C94
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Electrodes Of Semiconductors (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
実施形態1のグラフェン配線構造は、平面状のグラフェンシートが積層した多層グラフェンと、平面状のグラフェンシートの層間に第1層間物質と、を有し、第1層間物質は金属オキシハライドである。
図3の工程模式図に示す部材は、基板11上に、複数の平面状のグラフェンシート1Aから1Fが積層した多層グラフェン1を有する部材である。多層グラフェン1は、図示しない基板上に触媒膜を設けて触媒膜から成長させて配線形状に加工したものや、基板11へ転写した多層グラフェン1を配線形状に加工したものや、配線形状に加工した多層グラフェン1を基板11へ転写したものなどが含まれる。多層グラフェン1は、単結晶グラフェンでも多結晶グラフェンでもよい。図3の多層グラフェン1は、例示として、欠陥や粒界の無い単結晶のグラフェンシート1Aから1Fが積層したものを挙げている。基板11は、Siなど絶縁性の基板が好適に用いられるが、多層グラフェン1を保持するものであれば特に限定されない。
酸化処理を行う際に、マスクを形成して、選択した層間領域に酸化処理を行ってもよい。このようにすることで、第1層間物質2が形成される領域を選択することができる。
実施形態2は、実施形態1のグラフェン配線構造の変形例である。実施形態2のグラフェン配線構造は、多層グラフェン1と、多層グラフェン1の層間に存在する第1層間物質2と、第2層間物質3と、第3層間物質4とを有する。図6に実施形態2のグラフェン配線構造の断面模式図を示す。実施形態2の多層グラフェン1、第1層間物質2と第2層間物質3は、実施形態1と共通するため、その説明を省略する。
酸化処理を行う際に、マスクを形成して、選択した層間領域に酸化処理を行ってもよい。このようにすることで、第3層間物質4が形成される領域の選択をすることができる。
実施形態3は、実施形態1のグラフェン配線構造の変形例である。実施形態3のグラフェン配線構造は、多層グラフェン1と、多層グラフェン1の層間に存在する第1層間物質2と、第2層間物質3と、第4層間物質5とを有する。図7に実施形態3のグラフェン配線構造の断面模式図を示す。実施形態2の多層グラフェン1、第1層間物質2と第2層間物質3は、実施形態1と共通するため、その説明を省略する。
実施形態4は、実施形態1のグラフェン配線構造及び実施形態2のグラフェン配線構造の変形例である。実施形態4のグラフェン配線構造は、多層グラフェン1と、多層グラフェン1の層間に存在する第1層間物質2、第2層間物質3及び第4層間物質5と、多層グラフェン1の外周部、多層グラフェン1の層間と多層グラフェン1の外周部及び層間に存在する第5層間物質6とを有する。図8に実施形態3のグラフェン配線構造の断面模式図を示す。実施形態4の第1層間物質2、第2層間物質3と第4層間物質5は、実施形態1又は実施形態3と共通するため、その説明を省略する。
実施形態5は、実施形態1のグラフェン配線構造の変形例である。図9の断面模式図に示すグラフェン配線は、基板11上の第1絶縁膜7と第2絶縁膜8の間にグラフェン配線構造が設けられている。実施形態5の第1層間物質2と第2層間物質3は、他の実施形態と共通するため、これらの説明を省略する。また、他の多層グラフェン1等に関しても、他の実施形態と共通する説明については省略する。
実施形態6は、実施形態5のグラフェン配線構造の変形例である。図10に実施形態6のグラフェン配線の断面模式図を示す。図10の模式図に示すグラフェン配線は、多層グラフェン1の開口された端部側に第3層間物質4を有することが図9の模式図に示すグラフェン配線との相違点である。
多結晶な多層グラフェン1をSiO2基板11上に設け、塩化モリブデン及び不活性ガスからなる雰囲気で多層グラフェンを処理する。続けて、酸素ガスを含む雰囲気にガスを置換して、塩化モリブデンで処理された多層グラフェン1を酸化処理して、図11の斜視模式図に示すようなグラフェン配線構造を得る。そして、グラフェン配線構造を覆うように樹脂12で被覆して、顕微鏡で撮像するための断面を用意する。図11の斜視模式図には、基板11と、基板11上に多層グラフェン1、多層グラフェン1の層間に存在する層間物質2、3と電子顕微鏡で観察する断面を示す破線で表した仮想面を示している。
明細書中及び請求項中において、一部の元素は元素記号で表している。
Claims (6)
- 複数の平面状の多結晶グラフェンシートが積層した多層グラフェンと、
前記複数の平面状の多結晶グラフェンシートの層間に存在する、金属オキシハライドと金属ハロゲン化物と、
を含有するグラフェン配線構造。 - 前記金属オキシハライドは、金属オキシ塩化物、金属オキシフッ化物、又は、金属オキシ塩化物及び金属オキシフッ化物である請求項1に記載のグラフェン配線構造。
- 前記金属オキシハライドは、Nb,Mo,Ta,WとBiのうちのいずれか1種以上の金属を金属オキシハライドの金属として含む請求項1又は2に記載のグラフェン配線構造。
- 前記複数の平面状の多結晶グラフェンシートの層間に金属の酸化物をさらに含有する請求項1乃至3のいずれか1項に記載のグラフェン配線構造。
- 前記金属オキシハライドは、NbOCl3,MoOCl3,TaOCl3,WOCl4,BiOCl,NbO2Cl,MoO2Cl,TaO2Cl、WO2Cl2、NbOF3,MoOF3,TaOF3,MoOF4,WOF4,BiOF,NbO2F,MoO2F,TaO2F,MoO2F2とWO2F2のうちのいずれか1種以上である請求項1乃至4のいずれか1項に記載のグラフェン配線構造。
- 平面状の多結晶グラフェンシートが積層した多層グラフェンの層間にハロゲン化金属を挿入させる工程と、
前記平面状の多結晶グラフェンシートが積層した多層グラフェンに酸化処理を施して、金属オキシハライドである第1層間物質を形成する工程と、
を有するグラフェン配線構造の作製方法。
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