CN112530905B - 半导体存储装置及其制造方法 - Google Patents
半导体存储装置及其制造方法 Download PDFInfo
- Publication number
- CN112530905B CN112530905B CN202010116085.5A CN202010116085A CN112530905B CN 112530905 B CN112530905 B CN 112530905B CN 202010116085 A CN202010116085 A CN 202010116085A CN 112530905 B CN112530905 B CN 112530905B
- Authority
- CN
- China
- Prior art keywords
- conductive film
- metal element
- atoms
- film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000007789 gas Substances 0.000 claims abstract description 49
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 41
- 239000001301 oxygen Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000012159 carrier gas Substances 0.000 claims abstract description 15
- 230000008022 sublimation Effects 0.000 claims abstract description 7
- 238000000859 sublimation Methods 0.000 claims abstract description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- 239000010937 tungsten Substances 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical group [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- 150000003658 tungsten compounds Chemical class 0.000 claims description 2
- 238000009825 accumulation Methods 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 32
- 125000004429 atom Chemical group 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 125000004430 oxygen atom Chemical group O* 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BWKCCRPHMILRGD-UHFFFAOYSA-N chloro hypochlorite;tungsten Chemical compound [W].ClOCl BWKCCRPHMILRGD-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002822 niobium compounds Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Abstract
本发明的实施方式提供一种能提高氧化膜与导电膜的密接性且降低导电膜的电阻的半导体装置、其制造方法及半导体存储装置。实施方式的半导体装置的制造方法是在半导体基板上形成含有第1元素的氧化膜,并使用含有金属元素的材料气体、还原所述金属元素的还原气体及将所述材料气体导至所述基板的载气在所述氧化膜上形成导电膜;该半导体装置的制造方法中,所述材料气体、所述还原气体及所述载气中的至少一种气体包含氧元素,且形成所述导电膜时的所述基板的温度高于所述金属元素的氧化物的升华温度。
Description
[相关申请案]
本申请案享受以日本专利申请案2019-169528号(申请日:2019年9月18日)为基础申请案的优先权。本申请案通过参考该基础申请案而包含基础申请的全部内容。
技术领域
本发明的实施方式涉及一种半导体装置、其制造方法及半导体存储装置。
背景技术
当在氧化膜上直接形成金属膜时,金属膜与氧化膜的密接性弱,所以金属膜可能会剥离。因此,已知有在氧化膜与金属膜之间形成金属氮化膜的技术。然而,金属氮化物的比电阻高于金属,因此,包含金属氮化膜及金属膜的导电膜整体为高电阻。
发明内容
本发明的实施方式提供一种能提高氧化膜与导电膜的密接性且降低导电膜的电阻的半导体装置、其制造方法及半导体存储装置。
实施方式中的半导体装置的制造方法是在半导体基板上形成含有第1元素的氧化膜,使用含有金属元素的材料气体、还原所述金属元素的还原气体、及将所述材料气体导至所述基板的载气在所述氧化膜上形成导电膜;该半导体装置的制造方法中,所述材料气体、所述还原气体及所述载气中的至少一种包含氧元素,且形成所述导电膜时的所述基板的温度高于所述金属元素的氧化物的升华温度。
附图说明
图1是表示第1实施方式中的半导体装置的主要部分的构造的截面图。
图2是用于说明第1实施方式中的半导体装置的制造方法的图。
图3(a)、(b)是示意性表示氧化膜与导电膜的界面的状态的图。
图4是钨元素与氧元素的状态图的一例。
图5是表示第2实施方式中的半导体装置的主要部分的构造的截面图。
图6是表示第3实施方式中的半导体装置的主要部分的构造的截面图。
具体实施方式
以下,参照附图说明本发明的实施方式。本实施方式并不限制本发明。
(第1实施方式)
图1是表示第1实施方式中的半导体装置的主要部分的构造的截面图。本实施方式中的半导体装置1具有基板10、氧化膜20及导电膜30。
基板10例如为硅基板。在基板10上形成着氧化膜20。氧化膜20中含有例如氧化硅(SiO2)或氧化铝(Al2O3)。氧化膜20上形成着导电膜30。
导电膜30中含有金属元素及氧元素。该金属元素例如为钨(W)、钛(Ti)、钼(Mo)、铬(Cr)、钒(V)、铁(Fe)、铜(Cu)、钽(Ta)或铌(Nb)。导电膜30具有导电性,且电阻率(比电阻)为例如1.0×106μΩ/cm以下。
以下,说明本实施方式中的半导体装置1的制造方法。此处,将说明导电膜30的制造工艺。
首先,如图2所示,基板10是在被固定在平台100的状态下收容于腔室101内。此时,基板10上已形成有氧化膜20。本实施方式中,氧化膜20为氧化硅膜。
接着,通过CVD(Chemical Vapor Deposition,化学气相沉积法)在氧化膜20上形成导电膜30。具体而言,将含有金属元素及氧元素的材料气体201、与还原材料气体201中所含的金属元素的还原气体202交替导入腔室101内。此时,载气203被导入到材料气体201与还原气体202之间。利用载气203,将残留于腔室101内的气体排出。
本实施方式中,材料气体201含有二氯二氧化钨(WO2Cl2)。还原气体202是氢气(H2)。载气203是氩气(Ar)。
图3(a)及图3(b)是示意性表示氧化膜20与导电膜30的界面的原子的状态的图。若将上文所述的材料气体201、还原气体202及载气203导入腔室101内,则如图3(a)所示,含有钨元素及氧元素的导电膜30以与氧化膜20相接的方式形成在氧化膜20上。
一般而言,氧原子具有易与硅原子键结的性质。因此,如图3(b)所示,在导电膜30与氧化膜20的界面上,导电膜30中所含的氧原子与氧化膜20中所含的硅原子键结。换而言之,导电膜30中所含的金属原子经由氧原子而与氧化膜20中的硅原子键结。也就是说,在导电膜30,金属元素的原子与氧元素的原子键结,所述氧元素的原子与硅元素的原子键结。
因此,根据本实施方式,即便在导电膜30与氧化膜20之间未形成高电阻的金属氮化膜,也能提高导电膜30与氧化膜20的密接性。
而且,金属原子(钨原子)与氧原子的键结能小于硅原子与氧原子的键结能。因此,本实施方式中,在导电膜30与氧化膜20的界面上,导电膜30中所含的氧原子与其企图和金属原子键结,毋宁和氧化膜20中所含的硅原子键结。由此,能进一步提高导电膜30与氧化膜20的密接性。另一方面,本实施方式中,若导电膜30中的氧浓度高,则导电膜30中容易生成金属氧化物,从而会导致导电膜30的比电阻上升。
图4是钨元素与氧元素的状态图的一例。图4所示的状态图中参照了Bin.Tern.PhaseDiagrams Columbium,Molybdenum,Tantalum,Tungsten,Ad 407 987,1963,1-127。根据图4所示的状态图,氧原子比率最低的钨氧化物是三氧化五钨(W5O3)。该三氧化五钨中的氧浓度约为37.5atom%。若导电膜30膜中的氧浓度超过37.5atom%,则会生成钨氧化物,由此,导电膜30的比电阻上升。
钨的单位体积的原子数约为6.3×1022atoms/cm3,因此,相当于其37.5%的氧元素的体积密度约为2.38×1022atoms/cm3。因此,为了确保氧化膜20与导电膜30的高密接性、并抑制导电膜30的比电阻的上升、具有导电性,导电膜30中氧元素的体积密度理想的是小于2.38×1022atoms/cm3。
而且,如以下表1所示,钨以外的金属也同样可使用状态图等求出用于具有导电性的氧元素的体积密度的上限值。
[表1]
另一方面,从密接性的观点出发,导电膜30理想的是具有一定数值以上的体积密度。例如,通过使导电膜30为:氧元素的体积密度是1.0×1016atoms/cm3以上,能进一步提高与氧化膜的密接性。
而且,当形成导电膜30时,为了抑制导电膜30中所含的金属元素与氧元素键结而成的金属氧化物的生成,理想的是将基板10的温度(成膜温度)设定为高于该金属元素的氧化物的升华温度。例如,若基板10的温度高于750℃,则能使钨氧化物升华。结果,能抑制导电膜30中钨氧化物的生成。而且,当导电膜30中所含的金属元素为钼时,钼氧化物在400~600℃会升华。因此,若将基板10的温度设定为高于400℃,则能抑制钼氧化物的生成。
以下表2中表示上文所述的金属元素的稳定的氧化膜及其氧化物的升华温度。即,各个金属元素的成膜中,理想的是将基板10的温度(成膜温度)设定为高于表2中记载的升华温度。由此,能使金属氧化物升华。
[表2]
金属元素 | 最稳定的氧化物的示例 | 升华温度(℃) |
Ti | TiO2 | 935 |
Mo | MoO2 | 397.5 |
Cr | Cr2O3 | 1217.5 |
V | V2O5 | 345 |
Fe | Fe3O4 | 798.5 |
Cu | Cu2O | 617.5 |
Ta | Ta2O5 | 734 |
Nb | Nb2O5 | 760 |
W | WO3 | 736.5 |
另外,本实施方式中,虽然材料气体201含氧元素,但导电膜30的成膜方法并不限于此。只要利用材料气体201、还原气体202及载气203中的至少一种含氧元素的组合而形成导电膜30即可。
例如,若采用含有钨化合物(W(CO)6、WF6、WCl6、WCl5、WO2Cl2、WOCl4、W(CO)6)的材料气体201、含有氢气(H2)、二氧化氮气体(NO2)、一氧化二氮气体(N2O)、一氧化碳气体(CO)、氧气(O2)、或臭氧气体(O3)的还原气体202、及含有氩气(Ar)、氮气(N2)、或二氧化碳气体(CO2)的载气203中的至少一种含有氧的组合,则导电膜30中含有钨元素及氧元素,所以导电膜30与氧化膜20的密接性提升。此处,虽以钨为例进行记载,但同样也可利用其他金属元素来实现。例如,可使用含有钼化合物(MoO2Cl2、MoOCl4、Mo(CO)6)、钛化合物(Ti[OCH(CH3)2]4)、钽化合物(Ta(OC2H5)5)、或铌化合物(Nb(OC2H5)5)的气体作为材料气体。
(第2实施方式)
图5是表示第2实施方式中的半导体装置的主要部分的构造的截面图。对于与上文所述的第1实施方式中的半导体装置1相同的构成要素标注相同符号,并省略详细说明。
如图5所示,本实施方式中的半导体装置2的导电膜30的构造与第1实施方式不同。第1实施方式中的导电膜30为单层构造,相对于此,本实施方式中的导电膜30为具有第1层31及第2层32的双层构造。
第1层31接触氧化膜20,且含有金属元素及氧元素。第1层31是通过与上文所述的第1实施方式中的导电膜30相同的制造工艺形成。例如,若使用含有二氯二氧化钨的材料气体201、含有氢元素的还原气体202及含有氩元素的载气203进行CVD,则可在氧化膜20上形成含有钨元素及氧元素的第1层31。此时,若形成厚的第1层31,则电阻增高。因此,第1层31的厚度理想的是10nm以下。
第2层32形成在第1层31上。第2层32是利用不同于第1层31的材料气体201形成。例如,若采用含有六氟化钨(WF6)的材料气体201、含有氢元素的还原气体202及含有氩元素的载气203进行CVD,则可在第1层31上形成含有钨元素的第2层32。第2层32不含氧元素,因此,电阻低于第1层31。为了降低导电膜30整体的电阻,理想的是第2层32比第1层31厚。
根据本实施方式,通过在氧化膜20上形成含氧元素的第1层31,能提高氧化膜20与导电膜30的密接性。而且,通过在第1层31上形成杂质少的第2层32,能降低导电膜30的电阻。由此,能实现兼顾密接性与低电阻的导电膜30。
另外,本实施方式中,第1层31中所含的金属元素与第2层32中所含的金属元素种类相同,但各层中所含的金属元素种类也可不同。例如,也可为第1层31使用钼元素、第2层32使用钨元素的构造。该情况下,也能兼顾密接性与低电阻。而且,是以第2层32为不含氧元素的层的情况进行说明,但只要形成为氧浓度低于第1层31,则可具有与第2层32不含氧元素的情况下相同的效果。
(第3实施方式)
图6是表示第3实施方式中的半导体装置的主要部分的构造的截面图。图6所示的半导体装置3是层叠有字线的三维半导体存储器。半导体装置3中,多个氧化膜20及多个导电膜30交替层叠在基板10上。各导电膜30作为字线发挥功能。
当形成第3实施方式的各导电膜30时,首先,在基板10上交替层叠氧化膜20与牺牲膜。牺牲膜例如为氮化硅(SiN)膜。牺牲膜可在形成后述的存储器元件膜40后,例如利用含有磷酸的药液除去。通过除去牺牲膜,在氧化膜20间形成空洞。该空洞内,利用上文所述的第1实施方式或第2实施方式中说明的方法形成各导电膜30。
存储器元件膜40形成在贯穿包含氧化膜20及所述牺牲膜的层叠体的孔内。在该孔的外周部形成电荷阻挡膜41。在电荷阻挡膜41的内侧形成电荷蓄积膜42。在电荷蓄积膜42的内侧形成隧道绝缘膜43。在隧道绝缘膜43的内侧形成沟道膜44。在沟道膜44的内侧形成芯膜45。
电荷阻挡膜41、隧道绝缘膜43及芯膜45例如为氧化硅膜。电荷蓄积膜42例如为氮化硅膜(SiN)。沟道膜44例如为多晶硅膜。
本实施方式中,导电膜30是通过上文所述的第1实施方式或第2实施方式中说明的方法形成,因此含氧元素。该氧元素可提升氧化膜20与导电膜30的密接性,因此无需高电阻的金属氮化物。所以,能提高氧化膜20与导电膜30的密接性,并降低导电膜的电阻。
已对本发明的若干实施方式进行了说明,但这些实施方式是作为示例提出,并不用于限定发明范围。这些实施方式能以其他多种形态实施,可在不脱离发明宗旨的范围内进行各种省略、置换、变更。这些实施方式及其变形都属于发明的范围或宗旨中,同样,也属于专利申请范围中所记载的发明及其等价的范围内。
[符号的说明]
1~3:半导体装置
10:基板
20:氧化膜
30:导电膜
31:第1层
32:第2层
Claims (9)
1.一种半导体存储装置,其特征在于包括:
多个导电膜,彼此相隔地在第1方向上层叠;
多个氧化膜,在所述第1方向上与所述导电膜直接相接,并隔着所述导电膜而层叠;
半导体层,沿所述第1方向贯穿所述多个导电膜及所述多个氧化膜;以及
电荷蓄积膜,在与所述第1方向交叉的第2方向上,位于所述半导体层与所述导电膜之间;
所述氧化膜含有第1元素,
所述氧化膜直接相接而设的所述导电膜含有单一金属元素及氧元素;
所述导电膜中氧元素的体积密度是:
当所述金属元素为钨的情况下,小于2.38×1022atoms/cm3,
当所述金属元素为钼的情况下,小于4.27×1022atoms/cm3,
当所述金属元素为钛的情况下,小于2.28×1022atoms/cm3,
当所述金属元素为铬的情况下,小于5.00×1022atoms/cm3,
当所述金属元素为钒的情况下,小于4.23×1022atoms/cm3,
当所述金属元素为铁的情况下,小于4.84×1022atoms/cm3,
所述金属元素为铜的情况下,小于2.82×1022atoms/cm3,
所述金属元素为钽的情况下,小于3.32×1022atoms/cm3,
所述金属元素为铌的情况下,小于2.78×1022atoms/cm3。
2.根据权利要求1所述的半导体存储装置,其特征在于:所述导电膜中氧元素的体积密度为1.0×1016atoms/cm3以上。
3.根据权利要求1或2所述的半导体存储装置,其特征在于:在所述导电膜,所述金属元素的原子与氧元素的原子键结,氧元素的所述原子与所述第1元素之原子键结。
4.根据权利要求1或2所述的半导体存储装置,其特征在于:所述金属元素与氧元素的键结能小于氧元素与所述第1元素的键结能。
5.根据权利要求1或2所述的半导体存储装置,其特征在于:在所述导电膜上,还包括:含有与所述金属元素相同或不同种类的金属元素且氧浓度低于所述导电膜的膜。
6.一种半导体存储装置的制造方法,其特征在于:
其系下述半导体存储装置的制造方法,
所述半导体存储装置包括:
多个导电膜,彼此相隔地在第1方向上层叠;
多个氧化膜,在所述第1方向上与所述导电膜直接相接,并隔着所述导电膜而层叠;
半导体层,沿所述第1方向贯穿所述多个导电膜及所述多个氧化膜;以及
电荷蓄积膜,在与所述第1方向交叉的第2方向上,位于所述半导体层与所述导电膜之间;其中,
所述多个氧化膜含有第1元素,并以进行积层的方式形成,
所述多个导电膜系使用含有金属元素的材料气体、还原所述金属元素的还原气体、及将所述材料气体导至半导体基板的载气,以与所述多个氧化膜直接相接的方式形成,
所述材料气体、所述还原气体及所述载气中的至少一个含有氧元素;
形成所述导电膜时的所述基板的温度高于所述金属元素的氧化物的升华温度,
所述导电膜含有单一金属元素。
7.根据权利要求6所述的半导体存储装置的制造方法,其特征在于:
形成所述导电膜的工序包含:
形成第1层的工序,所述第1层与所述氧化膜接触且含有所述金属元素及氧元素,以及
在所述形成第1层的工序之后形成第2层的工序,所述第2层含有与所述金属元素相同或不同的金属元素并且氧浓度低于所述第1层。
8.根据权利要求6或7所述的半导体存储装置的制造方法,其特征在于:所述金属元素为钨、钛、钼、铬、钒、铁、铜、钽、或铌。
9.根据权利要求6或7所述的半导体存储装置的制造方法,其特征在于:
所述材料气体含有钨化合物,
所述还原气体含有氢气、二氧化氮气体、一氧化二氮气体、一氧化碳气体、氧气或臭氧气体,
所述载气含有氩气、氮气或二氧化碳气体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-169528 | 2019-09-18 | ||
JP2019169528A JP2021048239A (ja) | 2019-09-18 | 2019-09-18 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112530905A CN112530905A (zh) | 2021-03-19 |
CN112530905B true CN112530905B (zh) | 2024-04-16 |
Family
ID=74868265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010116085.5A Active CN112530905B (zh) | 2019-09-18 | 2020-02-25 | 半导体存储装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20210083057A1 (zh) |
JP (1) | JP2021048239A (zh) |
CN (1) | CN112530905B (zh) |
TW (1) | TWI801720B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023026869A (ja) | 2021-08-16 | 2023-03-01 | キオクシア株式会社 | 半導体記憶装置及び半導体記憶装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05319965A (ja) * | 1992-05-20 | 1993-12-03 | Hitachi Metals Ltd | 窒化アルミニウム焼結体基板のメタライズ方法 |
JPH11168073A (ja) * | 1997-09-30 | 1999-06-22 | Fujitsu Ltd | 半導体装置の製造方法 |
CN101128922A (zh) * | 2005-01-31 | 2008-02-20 | 东京毅力科创株式会社 | 用于制作半导体器件的方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3156878B2 (ja) * | 1992-04-30 | 2001-04-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
US7960802B2 (en) * | 2008-11-21 | 2011-06-14 | Texas Instruments Incorporated | Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget |
FR2944295B1 (fr) * | 2009-04-10 | 2014-08-15 | Saint Gobain Coating Solutions | Cible a base de molybdene et procede d'elaboration par projection thermique d'une cible |
JP5235930B2 (ja) * | 2010-03-26 | 2013-07-10 | 株式会社東芝 | 半導体記憶装置、及びその製造方法 |
KR20130004784A (ko) * | 2011-07-04 | 2013-01-14 | 삼성전자주식회사 | 저항 변화 체를 갖는 비-휘발성 메모리 소자 및 그 제조방법 |
JP5960491B2 (ja) * | 2012-04-27 | 2016-08-02 | キヤノンアネルバ株式会社 | 半導体装置およびその製造方法 |
KR102192848B1 (ko) * | 2014-05-26 | 2020-12-21 | 삼성전자주식회사 | 메모리 장치 |
US9620610B1 (en) * | 2015-10-28 | 2017-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET gate structure and method for fabricating the same |
US10163626B2 (en) * | 2016-12-12 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal gate structure and manufacturing method thereof |
JP2019102684A (ja) * | 2017-12-05 | 2019-06-24 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
-
2019
- 2019-09-18 JP JP2019169528A patent/JP2021048239A/ja active Pending
-
2020
- 2020-02-25 CN CN202010116085.5A patent/CN112530905B/zh active Active
- 2020-02-26 TW TW109106157A patent/TWI801720B/zh active
- 2020-03-13 US US16/817,814 patent/US20210083057A1/en not_active Abandoned
-
2022
- 2022-11-30 US US18/072,441 patent/US20230093431A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05319965A (ja) * | 1992-05-20 | 1993-12-03 | Hitachi Metals Ltd | 窒化アルミニウム焼結体基板のメタライズ方法 |
JPH11168073A (ja) * | 1997-09-30 | 1999-06-22 | Fujitsu Ltd | 半導体装置の製造方法 |
CN101128922A (zh) * | 2005-01-31 | 2008-02-20 | 东京毅力科创株式会社 | 用于制作半导体器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN112530905A (zh) | 2021-03-19 |
TWI801720B (zh) | 2023-05-11 |
TW202113930A (zh) | 2021-04-01 |
US20230093431A1 (en) | 2023-03-23 |
JP2021048239A (ja) | 2021-03-25 |
US20210083057A1 (en) | 2021-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9117885B2 (en) | Graphene interconnection and method of manufacturing the same | |
JP5210559B2 (ja) | 半導体装置およびその製造方法 | |
US7872292B2 (en) | Capacitance dielectric layer and capacitor | |
US20120080661A1 (en) | Graphene interconnection and method of manufacturing the same | |
US20200127007A1 (en) | Method for manufacturing semiconductor device | |
US8710672B2 (en) | Semiconductor device and method of manufacturing the same | |
US20150031186A1 (en) | Method of fabricating semiconductor device having dielectric layer with improved electrical characteristics | |
JP2004266010A (ja) | 半導体装置およびその製造方法 | |
US11817320B2 (en) | CVD based oxide-metal multi structure for 3D NAND memory devices | |
JP2007208256A (ja) | 複数の金属層を積層した半導体素子 | |
CN112530905B (zh) | 半导体存储装置及其制造方法 | |
JP2012204591A (ja) | 膜形成方法および不揮発性記憶装置 | |
KR101247871B1 (ko) | 반도체 장치 및 그 제조 방법 | |
JP2010010211A (ja) | 半導体装置の製造方法、及び半導体装置 | |
US8344438B2 (en) | Electrode of an integrated circuit | |
Tsui et al. | High-Performance Metal–Insulator–Metal Capacitors With $\hbox {HfTiO}/\hbox {Y} _ {2}\hbox {O} _ {3} $ Stacked Dielectric | |
US7154179B2 (en) | Semiconductor device | |
KR100476482B1 (ko) | 반도체 소자의 장벽 금속층 형성 방법 | |
US9997611B2 (en) | Graphene wiring structure and method for manufacturing graphene wiring structure | |
TWI236092B (en) | Electroless plating process, and embedded wire and forming process thereof | |
JP2008016464A (ja) | 半導体装置及び半導体装置の製造方法 | |
US20130240822A1 (en) | Nonvolatile memory device and method for manufacturing the same | |
US9076794B2 (en) | Semiconductor device using carbon nanotube, and manufacturing method thereof | |
JP7362911B2 (ja) | 選択的自己制限式タングステンエッチングプロセス | |
JP5213897B2 (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |