TWI534979B - 用於射頻多晶片積體電路封裝的電磁干擾外殼 - Google Patents
用於射頻多晶片積體電路封裝的電磁干擾外殼 Download PDFInfo
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Description
各個特徵係關於電磁干擾(EMI)罩殼的方法,尤其係關於用於層疊封裝(PoP)射頻(RF)積體電路設備的EMI罩殼。
層疊封裝(PoP)是將個別的邏輯和記憶體球柵陣列(BGA)封裝縱向地組合成一個單元的積體電路封裝方法。兩個或更多個封裝安裝在彼此頂上(亦即,堆疊),且具有在它們之間路由信號的標準介面。這允許在諸如行動電話、膝上型電腦、和數位相機之類的設備中有更高元件密度。
包含射頻(RF)組件(諸如RF放大器以及其他RF主動及/或被動元件(例如,濾波器,雙工器等))的PoP可能需要電磁干擾(EMI)遮罩(亦常常稱為RF遮罩)以便於將RF組件與周圍環境隔離開來。該遮罩防止PoP的RF組件洩漏出RF能量到周圍環境,並且亦防止環境中不想要的外來RF信號雜訊被注入到RF PoP中。
圖1和2圖示了先前技術中所見的EMI遮罩100。具體而言,圖1圖示了EMI遮罩100的頂部立體視圖,並且圖2圖示了遮罩100的底部立體視圖。EMI遮罩100通常由金屬(諸如鋁、銅等)製成。遮罩100的大小被制定為配合在一或多個RF積體電路(諸如RF PoP電路)上。一旦就位,遮罩100就充當法拉第籠並隔絕其內的RF電路系統,以防止RF輻射洩漏進受保護的電路系統中或從受保護的電路系統洩漏出來。EMI遮罩100可以複數個孔102為特徵,這些孔102的大小被制定成小到足以仍夠阻隔具有顯著大於這些孔的直徑的波長的RF輻射。
圖3圖示了先前技術中所見的PoP電路300的示意方塊圖,該PoP電路300用EMI遮罩302覆蓋。PoP電路300包括第一封裝基板304和第二封裝基板306。第二封裝基板306堆疊在第一封裝基板304的頂上。第一基板304可包括至少一個積體電路(IC),諸如RF功率放大器IC 308。第二基板306可包括複數個IC 310,諸如一或多個被動雙工器及/或濾波器(例如,表面聲波(SAW)濾波器)。IC 308、310各自經由複數個焊接凸塊312電耦合並實體耦合至它們相應的基板304、306。第二基板306經由一或多個焊球314或者導電柱被電耦合並實體耦合至第一基板304。
PoP電路300具有幾個顯著缺點。第一,耦合至第二基板306的複數個IC 310具有不良的熱傳導路徑,這使得由IC 310產生的熱聚集在PoP電路300中並使效能降級。例如,由第二基板的IC 310產生的大部分熱僅經由焊球/柱314來消散,而焊球/柱314位於接近第二基板306的邊緣並且在數目上相對較
少。因此,即使第二基板的IC 310可能是產生的熱只是高功率主動RF功率放大器IC 308的熱的一小部分(例如1/8)的被動IC(例如,被動濾波器),但耦合至第二基板的IC 310的不良的熱傳導路徑314使得這些IC 310達到高到不可取的溫度。作為對比,第一基板的IC 308具有相對良好的熱傳導路徑,其允許RF功率放大器308產生的相對較大量的熱能消散掉。這些熱傳導路徑包括位於第一基板304內的熱通孔316,這些熱通孔316將RF功率放大器308電耦合且熱耦合至焊球318及/或幫助消散熱的熱散佈器。
第二,將第二基板的IC 310電耦合至第一基板304(例如,地和電力網)的焊球314的位置和有限數目亦限制了PoP電路300的電效能。焊球314導致瓶頸,該瓶頸尤其增加第二基板的IC 310與地/電力網之間的寄生電感。該電感降低了IC 310(例如,SAW濾波器)的電效能。
EMI遮罩302由金屬製成並被設計成充當配合在複數個RF裝置308、310上的法拉第籠。雖然EMI遮罩302防止相當大量的非期望RF輻射洩漏出或洩漏進PoP電路,但它對於減輕以上兩個前述問題無所作為。因此,存在對於以EMI遮罩為特徵的改善層疊封裝設計的需要,該EMI遮罩除了提供針對RF輻射的保護以外,亦幫助改善此層疊封裝設備內底下的積體電路的熱和電效能。
一個特徵提供一種封裝,該封裝包括基板,該基板具有耦合至基板的第一表面的至少一個第一電路元件,該封
裝亦包括耦合至基板的電磁干擾(EMI)遮罩,EMI遮罩包括配置成遮罩封裝不受射頻輻射影響的金屬殼,耦合至金屬殼的內表面的至少一部分的介電層,耦合至介電層並經由介電層與金屬殼電絕緣的複數條信號線,以及耦合至EMI遮罩的內表面的至少一個第二電路元件,EMI遮罩的內表面的至少一部分面對基板的第一表面,並且這複數條信號線配置成向第二電路元件提供電信號。根據一態樣,金屬殼進一步配置成向第二電路元件提供電接地。根據另一態樣,第二電路元件進一步耦合至金屬殼的內表面。根據又一態樣,金屬殼熱耦合至第二電路元件並配置成消散由第二電路元件產生的熱能。根據另一態樣,第一和第二電路元件各自是主動及/或被動RF電路元件中的至少一者。
根據一態樣,金屬殼包括將EMI遮罩耦合至基板的複數個側壁。根據另一態樣,一或多個槽形成在複數個側壁之間,該一或多個槽允許氣流穿過由具有複數個側壁的金屬殼和基板形成的腔。根據又一態樣,複數個側壁包括內側壁表面,其包括介電層以及複數條信號線的至少一部分。
根據一態樣,內側壁表面使用複數條信號線的部分將第二電路元件電耦合至基板。根據另一態樣,EMI遮罩和基板形成包含第一和第二電路元件的腔。根據又一態樣,此封裝被納入音樂播放機、視訊播放機、娛樂單元、導航設備、通訊設備、行動電話、智慧型電話、個人數位助理、固定位置終端、平板電腦、及/或膝上型電腦中的至少一者中。
另一特徵提供一種製造封裝的方法,其中該方法包
括:提供基板以及至少一個第一電路元件,將第一電路元件耦合至基板的第一表面,提供具有金屬殼的電磁干擾(EMI)遮罩,該金屬殼配置成遮罩封裝不受射頻輻射影響,在該金屬殼的內表面的至少一部分之上沉積介電層,在介電層處形成複數條信號線,從而複數條信號線經由介電層與金屬殼電絕緣,將至少一個第二電路元件耦合至EMI遮罩的內表面,該複數條信號線配置成向第二電路元件提供電信號,以及將EMI遮罩耦合至基板,從而EMI遮罩的內表面的至少一部分面對基板的第一表面。根據一態樣,方法進一步包括將第二電路元件耦合至金屬殼的內表面。根據另一態樣,方法進一步包括將金屬殼熱耦合至第二電路元件,從而金屬殼配置成消散由第二電路元件產生的熱能。
根據一態樣,方法進一步包括在EMI遮罩和基板之間形成包含第一和第二電路元件的腔。根據另一態樣,金屬殼包括複數個側壁,方法進一步包括將EMI遮罩的複數個側壁耦合至基板。根據又一態樣,方法進一步包括形成由金屬殼、複數個側壁、和基板限界的腔,以及在複數個側壁之間形成允許氣流穿過該腔的一或多個槽。根據另一態樣,方法進一步包括使用內側壁表面上所包括的複數條信號線的該部分將第二電路元件電耦合至基板。
另一特徵提供一種封裝,該封裝包括基板,該基板具有耦合至基板的第一表面的至少一個第一電路元件,該封裝亦包括用於覆蓋基板的至少一部分的裝置,該用於覆蓋的裝置包括用於遮罩封裝不受射頻輻射影響的裝置,耦合至用
於遮罩的裝置的內表面的至少一部分的用於絕緣的裝置,耦合至用於絕緣的裝置並經由用於絕緣的裝置與用於遮罩的裝置電絕緣的複數個用於攜帶電信號的裝置,以及耦合至用於覆蓋的裝置的內表面的至少一個第二電路元件,該用於覆蓋的裝置的內表面的至少一部分面對基板的第一表面,並且複數個用於攜帶電信號的裝置配置成向第二電路元件提供電信號。根據一態樣,用於遮罩的裝置進一步配置成向第二電路元件提供電接地。根據另一態樣,第二電路元件進一步耦合至用於遮罩的裝置的內表面。
根據一態樣,用於遮罩的裝置熱耦合至第二電路元件並配置成消散由第二電路元件產生的熱能。根據另一態樣,用於遮罩的裝置包括將用於覆蓋的裝置耦合至基板的複數個側壁。根據又一態樣,一或多個用於通風的裝置形成在這複數個側壁之間,該一或多個用於通風的裝置允許氣流穿過由具有複數個側壁的用於遮罩的裝置和基板形成的腔。
根據一態樣,複數個側壁包括內側壁表面,其包括用於絕緣的裝置以及複數個用於攜帶電信號的裝置的至少一部分。根據另一態樣,內側壁表面使用複數個用於攜帶電信號的裝置的部分將第二電路元件電耦合至基板。根據又一態樣,用於覆蓋的裝置和基板形成包含第一和第二電路元件的腔。
100‧‧‧EMI遮罩
102‧‧‧孔
300‧‧‧PoP電路
302‧‧‧EMI遮罩
304‧‧‧第一封裝基板
306‧‧‧第二封裝基板
308‧‧‧RF功率放大器積體電路(IC)
310‧‧‧積體電路(IC)
312‧‧‧焊接凸塊
314‧‧‧焊球
316‧‧‧熱通孔
318‧‧‧焊球
400‧‧‧EMI遮罩
402‧‧‧內表面
404‧‧‧側壁
406‧‧‧內側壁表面
408‧‧‧邊緣
410‧‧‧電路元件
412‧‧‧槽
502‧‧‧外表面
702‧‧‧金屬殼
704‧‧‧介電層
706‧‧‧信號線
708‧‧‧腔
710‧‧‧外金屬表面
712‧‧‧內金屬表面
714‧‧‧背板
800‧‧‧模組基板
802‧‧‧第一表面
804‧‧‧一或多個電路元件
806‧‧‧焊接凸塊
808‧‧‧焊球
900‧‧‧多晶片封裝(MCP)
1002‧‧‧信號線
1004‧‧‧電連接
1006‧‧‧信號接地
1008‧‧‧電連接
1012‧‧‧焊接凸塊
1014‧‧‧焊接凸塊
1016‧‧‧的絕緣材料
1100‧‧‧步驟
1200‧‧‧步驟
1202‧‧‧內金屬表面
1300‧‧‧步驟
1302‧‧‧通孔
1400‧‧‧步驟
1402‧‧‧接地線
1500‧‧‧步驟
1600‧‧‧流程圖
1602‧‧‧步驟
1604‧‧‧步驟
1606‧‧‧步驟
1608‧‧‧步驟
1610‧‧‧步驟
1612‧‧‧步驟
1614‧‧‧步驟
1702‧‧‧行動電話
1704‧‧‧膝上型電腦
1706‧‧‧固定位置終端
圖1和2圖示了先前技術中所見的EMI遮罩。
圖3圖示了先前技術中所見的用EMI遮罩覆蓋的PoP
電路的示意方塊圖。
圖4圖示了EMI遮罩的底部立體視圖。
圖5圖示了遮罩的頂部立體視圖。
圖6圖示了遮罩的一部分的頂視圖。
圖7圖示了EMI遮罩的橫截面視圖。
圖8圖示了模組基板(例如,第一基板)。
圖9圖示了多晶片封裝。
圖10圖示了多晶片封裝的橫截面示意方塊圖。
圖11-15圖示了EMI遮罩的製造製程流。
圖16圖示了用於製造多晶片封裝的方法的流程圖。
圖17圖示了可與多晶片封裝集成的各個電子設備。
在以下描述中,提供了具體細節以提供對本案的各態樣的透徹理解。但是,普通熟習此項技術者將理解,沒有這些具體細節亦可實踐這些態樣。例如,電路可能用方塊圖示出以避免使這些態樣湮沒在不必要的細節中。在其他實例中,公知的電路、結構和技術可能不被詳細示出以免使本案的這些態樣不明朗。
措辭「示例性」在本文中用於表示「用作示例、實例或圖示」。本文中描述為「示例性」的任何實現或態樣不必被解釋為優於或勝過本案的其他態樣。
一種實現提供多晶片封裝,該多晶片封裝包括基板以及耦合至基板的電磁干擾(EMI)遮罩。至少一個積體電路
被耦合至基板的第一表面。EMI遮罩包括配置成遮罩封裝不受射頻輻射影響的金屬殼、耦合至該金屬殼的內表面的至少一部分的介電層、以及複數條信號線。這些信號線被耦合至介電層並經由介電層與金屬殼電絕緣。至少一個其他積體電路被耦合至EMI遮罩的內表面,並且EMI遮罩的內表面的至少一部分面對基板的第一表面。這些信號線被配置成將電信號提供給第二電路元件。
圖4-7圖示了根據本案一態樣的EMI遮罩400的各個視圖。具體而言,圖4圖示了EMI遮罩400的底部立體視圖,並且圖5圖示了遮罩400的頂部立體視圖。圖6圖示了遮罩400的一部分的頂視圖,並且圖7圖示了沿著線7’-7’取的EMI遮罩400的橫截面視圖。如以下將更詳細描述的,EMI遮罩400提供了熱傳導路徑以將熱從耦合至EMI遮罩400的電路元件消散掉。它亦用於減小寄生電感和電阻,並由此改善耦合至EMI遮罩400的電路元件的電效能。
參照圖4、5和6,EMI遮罩400包括內表面402和外表面502。一或多個電路元件410(例如,第二電路元件)可被耦合及/或安裝到EMI遮罩400的內表面402上。這些電路元件410可包括被動及/或主動電路元件,諸如被動及/或主動RF電路元件。此類元件的示例包括但不限於電阻器、電容器、電感器、被動RF濾波器、主動RF濾波器、表面聲波(SAW)濾波器、處理電路、RF放大器電路、雙工器、升頻轉換器、降頻轉換器,等等。根據一態樣,電路元件410可使用球柵陣列
(BGA)以晶片倒裝方式耦合至EMI遮罩400的內表面402。
圖7圖示了沿線7’-7’取的EMI遮罩400的橫截面視圖。在所圖示的示例中,遮罩400包括金屬殼702、介電層704、以及複數條信號線706。金屬殼702可由金屬或金屬合金構成,諸如但不限於鋁、銅、金、鈀、鋅等。金屬殼702被適配成遮罩EMI遮罩400的腔708內的電路元件不受RF輻射影響。根據一態樣,金屬殼702的外金屬表面710是EMI遮罩400的外表面502(參見圖5)。參照圖7,金屬殼702亦包括內金屬表面712,其位於EMI遮罩400的腔708內。
介電層704由一或多個材料製成,該(些)材料基本上是電絕緣體。介電層704被耦合至金屬殼702的內金屬表面712。複數條信號線706被耦合至介電層704並經由介電層704與金屬殼702電絕緣。信號線706是電導體,其向耦合至EMI遮罩400的一或多個電路元件410(參見圖4和6)提供電信號。介電層704可以是用於絕緣的裝置,並且信號線706可以是用於攜帶電信號的裝置。
參照圖4和7,金屬殼702包括背板714以及複數個側壁404。側壁404包括內側壁表面406,內側壁表面406包括介電層704以及亦有複數條信號線706的一部分。複數條信號線706的該部分繼續沿著內側壁表面406延伸。根據一態樣,這複數條信號線706可延伸直至側壁404的邊緣408。內側壁表面406使用這複數條信號線706的該部分將電路元件410耦合至模組基板(圖8中示出)。側壁404亦包括槽412,其提供穿過腔708的氣流。槽412亦允許模塑膠(未圖示)被注入到腔708
中。這些槽可以是用於通風的裝置。
圖8圖示了根據本案一態樣的模組基板800(例如,第一基板)。模組基板800可以是具有第一表面802的多層層壓基板。一或多個電路元件804(例如,第一電路元件)可被耦合至模組基板800的第一表面802。這些電路元件可包括但不限於電阻器、電容器、電感器、被動RF濾波器、主動RF濾波器、表面聲波(SAW)濾波器、處理電路、RF放大器電路、雙工器、升頻轉換器、降頻轉換器,等等。根據一態樣,電路元件804可按晶片倒裝BGA方式(例如使用焊接凸塊806)來耦合至模組基板800的第一表面802。在其他態樣,電路元件804可使用引線接合來耦合。模組基板800亦可具有與第一表面802相對的第二表面。根據一個示例,第二表面可具有耦合至第二表面的複數個焊球808,這複數個焊球808接合到印刷電路板(未圖示)上的對應電觸點。根據另一示例,取代焊球808,第二表面可具有平面形狀的金屬焊盤。平面金屬焊盤耦合至位於印刷電路板(未圖示)上的對應金屬焊接區焊盤。亦可以在平面金屬焊盤和金屬焊接區焊盤之間塗佈電和熱傳導糊劑以使熱消散最大化。
圖9圖示了根據本案一態樣的多晶片封裝(MCP)900。值得注意的是,MCP 900包括EMI遮罩400和模組基板800。具體而言,MCP 900是經由將EMI遮罩400耦合至模組基板800從而EMI遮罩400的內表面402面對模組基板(參見圖4、8和9
)的第一表面802的方式來形成的。參照圖7和9,腔708可以經由模組基板800和EMI遮罩400的組合來形成,更具體而言,經由模組基板800、以及金屬殼的側壁404和背板714來形成。EMI遮罩400可以是用於覆蓋模組基板800的裝置,並且金屬殼702(參見圖7)可以是用於遮罩多晶片封裝900不受RF輻射影響的裝置。
圖10圖示了根據本案一態樣的多晶片封裝(MCP)900的橫截面示意方塊圖。如上所述,MCP 900包括EMI遮罩400和模組基板800。模組基板800包括第一電路元件804,其耦合至模組基板800的第一表面802。第一電路元件804可以例如是RF信號放大器電路。第一電路元件804可經由複數個電連接1004(例如焊接凸塊)電耦合至位於模組基板800上的信號線1002。類似地,第一電路元件804可經由複數個其他電連接1008(例如焊接凸塊)電耦合至位於模組基板800上的信號接地1006。信號接地1006亦可耦合至焊球808,焊球808電耦合且熱耦合至印刷電路板(未圖示)上的對應金屬觸點,這說明消散由第一電路元件804產生的熱。根據一個示例,取代焊球808,信號接地1006可耦合至平面形狀的金屬焊盤。平面金屬焊盤耦合至位於印刷電路板(未圖示)上的對應金屬焊接區焊盤。亦可以在平面金屬焊盤和金屬焊接區焊盤之間塗佈電和熱傳導糊劑以使第一電路元件804的熱消散最大化。
EMI遮罩400包括金屬殼702、介電層704、以及複數條信號線706。EMI遮罩400亦包括被耦合至EMI遮罩400的內表面402的一或多個第二電路元件410(例如,RF濾波器,雙
工器等)。第二電路元件410可經由複數個電連接1012(例如焊接凸塊)電耦合至位於EMI遮罩400上的複數條信號線706。類似地,第二電路元件410可經由複數個電連接1014(例如焊接凸塊)電耦合至金屬殼702。這複數條信號線706經由介電層704與金屬殼702電絕緣。
EMI遮罩400及/或金屬殼702亦包括側壁404,側壁404將EMI遮罩400電耦合且實體耦合至模組基板800。具體而言,金屬殼的側壁404被電耦合至模組基板800的信號接地1002,並且由此整個金屬殼702充當用於第二電路元件410的信號接地。由於這些第二電路元件410在眾多位置經由這些電連接1014被耦合至金屬殼702,因此金屬殼702為這些第二電路元件410提供了強的電接地接觸表面,這降低了與這些第二電路元件410相關聯的寄生電感和電阻。此外,由於第二電路元件410與金屬殼702之間的直接熱傳導實體接觸,因此金屬殼702如同熱散佈器那樣吸收並消散由這些第二電路元件產生的熱能。
側壁404進一步將EMI遮罩400電耦合且實體耦合至模組基板800,這是因為複數條信號線706沿著內側壁表面404走的那部分被電耦合至模組基板800的信號線1002。EMI遮罩400的介電層704可耦合至模組基板800的絕緣材料1016。
圖11-15圖示了根據一態樣的EMI遮罩400的製造製程流。
圖11圖示了第一步驟1100,其中提供金屬殼702如
上該,金屬殼702充當EMI遮罩400的外金屬層和電接地。它包括側壁404、背板714、以及內金屬表面712。
圖12圖示了第二步驟1200,其中將介電層704沉積到金屬殼702的內金屬表面712上。介電層704由絕緣材料製成。介電層704具有內介電表面1202和內側壁表面406。
圖13圖示了第三步驟1300,其中移除(例如,蝕刻掉)介電層704的一些部分並且經由在剩餘的空間中進行填充來形成縱向的互連通道(通孔)1302。這些通孔1302由電和熱傳導材料(諸如銅、鋁等)製成。由此,這些通孔1302電接地。
圖14圖示了第四步驟1400,其中在介電層704的頂上及/或內部形成信號線706,並在通孔1302之上形成接地線1402。接地線1402和信號線706由導電材料(諸如金屬,包括但不限於鋁、銅、金等)製成。由於接地線1402被耦合至通孔1302,因此它們亦電接地。相反,信號線706與接地的金屬殼702電絕緣且實體絕緣並攜帶信號(例如,RF信號)。
圖15圖示了第五步驟1500,其中電路元件410(諸如RF IC(例如,濾波器、雙工器、放大器等))被實體耦合、電耦合、且熱耦合至接地線1402和信號線706。根據一個示例,焊接凸塊1012、1014(參見圖10)可被用來將組件410耦合至地和信號線1402、706。信號線706將電RF信號提供給電路元件410,同時接地線1402將電接地提供給元件410。值得注意的是,電路元件410可經由接地線1402、通孔1302、和金屬殼702來消散熱。
以上參照圖11-15的步驟1100、1200、1300、1400、1500僅描述和圖示了製造EMI遮罩400的一種一般性方法。在實踐中,EMI遮罩400可使用與步驟1100、1200、1300、1400、及/或1500有關的各種子步驟和子製程來製造。例如,執行這些步驟1100、1200、1300、1400、1500中的一或多個步驟可包括以下製程中的一或多個(未按任何特定次序列出):接地線及/或信號線蝕刻;通孔電鍍;晶種層沉積;光致蝕抗蝕沉積;金屬層沉積;光致蝕抗蝕移除;晶種層移除;晶種層蝕刻;及/或介電層蝕刻。例如,圖13和14的步驟1300、1400可經由以下操作來執行:蝕刻掉介電層704的一些部分以形成通孔洞;電鍍這些通孔洞;在介電層704及/或經電鍍通孔之上沉積晶種層;施加遮罩和光致抗蝕劑以界定信號線和接地線;沉積金屬層(例如,電鍍);移除光致抗蝕劑層;及蝕刻掉晶種層。
根據一態樣,可與形成信號線無關地並在其形成之前形成接地線。根據另一態樣,可與形成接地線無關地並在形成其之前形成信號線。例如,根據一態樣,在金屬殼702的內金屬表面1202和內側壁表面406上沉積介電層704之後,可應用遮罩和光致抗蝕製程來選擇性地蝕刻掉介電層704的一些部分以暴露金屬殼702的內金屬表面1202。被暴露的內金屬表面1202部分將用作接地線。隨後,可沉積晶種層以用於信號線沉積,之後接著是信號線金屬層沉積步驟。接下來,可蝕刻掉晶種層的一些部分。
作為另一示例,在金屬殼702的內金屬表面1202和內
側壁表面406上沉積介電層704之後,可沉積晶種層以用於信號線沉積隨後,可應用遮罩和光致抗蝕製程以界定信號線,之後接著是信號線金屬層沉積。接下來,可蝕刻掉晶種層的一些部分。隨後,可應用另一遮罩和光致抗蝕製程以界定接地線。接下來,蝕刻掉介電層704的將是接地線所在之處的部分以暴露金屬殼702的內金屬表面1202,其將用作接地。
圖16圖示了根據本案一態樣的用於製造多晶片封裝的方法的流程圖1600。首先,提供模組基板以及至少一個第一電路元件(1602)。接下來,將第一電路元件耦合至模組基板的第一表面(1604)。隨後,提供具有金屬殼的電磁干擾(EMI)遮罩,該金屬殼適配成遮罩多晶片封裝不受射頻輻射影響(1606)。接下來,在金屬殼的內表面的至少一部分之上沉積介電層(1608)。隨後,在介電層處形成複數條信號線,從而這複數條信號線經由介電層與金屬殼電絕緣(1610)。接下來,將至少一個第二電路元件耦合至EMI遮罩的內表面,其中這多條信號線被適配成向第二電路元件提供電信號(1612)。最後,將EMI遮罩耦合至模組基板,從而EMI遮罩的內表面的至少一部分面對模組基板的第一表面(1614)。
圖17圖示了可與前述MCP 900集成的各種電子設備。例如,行動電話1702、膝上型電腦1704以及固定位置終端1706可包括以EMI遮罩400為特徵的MCP 900。圖17中所圖示的設備1702、1704、1706僅是示例性的。其他電子設備亦可以MCP 900為其特徵,此類電子設備包括但不限於掌上型個人
通訊系統(PCS)單元、可攜式資料單元(諸如個人資料助理)、有GPS能力的設備、導航設備、機上盒、音樂播放機、視訊播放機、娛樂單元、固定位置資料單位(諸如儀錶讀數裝備)、或儲存或檢索資料或電腦指令的任何其他設備,或者其任何組合。
圖4、5、6、7、8、9、10、11、12、13、14、15、16及/或17中圖示的元件、步驟、特徵及/或功能之中的一或多個可以被重新編排及/或組合成單個元件、步驟、特徵或功能,或實施在數個元件、步驟、或功能中。亦可添加額外的元件、組件、步驟、及/或功能而不會脫離本發明。圖4、5、6、7、8、9、10、11、12、13、14、15及/或17中所圖示的裝置、設備、及/或元件可以被配置成執行圖16中所描述的方法、特徵、或步驟中的一或多個。
亦應注意,本案的各態樣可作為被圖示為流程圖、流程圖表、結構圖、或方塊圖的程序來描述。儘管流程圖可能會把諸操作描述為順序程序,但是這些操作中有許多能夠並行或併發地執行。另外,這些操作的次序可以被重新安排。
本文述及之本發明的各種特徵可實現於不同系統中而不脫離本發明。應注意,本案的以上各態樣僅是示例,且不應被解釋成限定本發明。對本案的各態樣的描述旨在是說明性的,而非限定所附請求項的範疇。由此,本發明的教導可以現成地應用於其他類型的裝置,並且許多替換、修改、和變形對於熟習此項技術者將是顯而易見的。
400‧‧‧EMI遮罩
402‧‧‧內表面
404‧‧‧側壁
406‧‧‧內側壁表面
408‧‧‧邊緣
410‧‧‧電路元件
412‧‧‧槽
Claims (26)
- 一種射頻多晶片積體電路封裝,包括:一基板,該基板具有耦合至該基板的一第一表面的至少一個第一電路元件;及一電磁干擾(EMI)遮罩,該EMI遮罩耦合至該基板,該EMI遮罩包括:一金屬殼,該金屬殼配置成遮罩該封裝不受射頻輻射影響,一介電層,該介電層耦合至該金屬殼的一內表面的至少一部分,複數條信號線,該複數條信號線耦合至該介電層並經由該介電層與該金屬殼電絕緣,複數個側壁,該複數個側壁耦合至該金屬殼,該複數個側壁包括一內側壁表面,該內側壁表面包括該介電層及該複數條信號線的至少一部分,及至少一個第二電路元件,該至少一個第二電路元件耦合至該EMI遮罩的一內表面,該EMI遮罩的該內表面的至少一部分面對該基板的該第一表面,並且該複數條信號線配置成向該第二電路元件提供電信號。
- 如請求項1述及之封裝,其中該金屬殼進一步配置成向該第二電路元件提供一電接地。
- 如請求項2述及之封裝,其中該第二電路元件進一步耦合 至該金屬殼的該內表面。
- 如請求項1述及之封裝,其中該金屬殼熱耦合至該第二電路元件並配置成消散由該第二電路元件產生的熱能。
- 如請求項1述及之封裝,其中該第一電路元件和該第二電路元件各自是一主動RF電路元件及/或一被動RF電路元件中的至少一者。
- 如請求項1述及之封裝,其中一或多個槽形成在該複數個側壁之間,該一或多個槽允許氣流穿過由具有該複數個側壁的該金屬殼和該基板形成的一腔。
- 如請求項1述及之封裝,其中該內側壁表面使用該複數條信號線的該部分將該第二電路元件電耦合至該基板。
- 如請求項1述及之封裝,其中該EMI遮罩和該基板形成包含該第一電路元件和該第二電路元件的一腔。
- 如請求項1述及之封裝,其中該封裝被納入一音樂播放機、一視訊播放機、一娛樂單元、一導航設備、一通訊設備、一行動電話、一智慧型電話、一個人數位助理、一固定位置終端、一平板電腦、及/或一膝上型電腦中的至少一者中。
- 一種製造一射頻多晶片積體電路封裝的方法,該方法包括以下步驟:提供一基板以及至少一個第一電路元件;將該第一電路元件耦合至該基板的一第一表面;提供具有一金屬殼的一電磁干擾(EMI)遮罩,該金屬殼遮罩該封裝不受射頻輻射影響;在該金屬殼的一內表面的至少一部分之上沉積一介電層;在該介電層處形成複數條信號線,從而該複數條信號線經由該介電層與該金屬殼電絕緣;將複數個側壁耦合至該金屬殼,該複數個側壁包括一內側壁表面,該內側壁表面包括該介電層及該複數條信號線的至少一部分;將至少一個第二電路元件耦合至該EMI遮罩的一內表面,該內表面包括該複數條信號線以向該第二電路元件提供電信號;及將該EMI遮罩耦合至該基板,從而該EMI遮罩的該內表面的至少一部分面對該基板的該第一表面。
- 如請求項10述及之方法,其中該金屬殼配置成向該第二電路元件提供一電接地。
- 如請求項11述及之方法,進一步包括以下步驟:將該第二電路元件耦合至該金屬殼的該內表面。
- 如請求項10述及之方法,進一步包括以下步驟:將該金屬殼熱耦合至該第二電路元件,從而該金屬殼配置成消散由該第二電路元件產生的熱能。
- 如請求項10述及之方法,其中該第一電路元件和該第二電路元件各自是一主動RF電路元件及/或一被動RF電路元件中的至少一者。
- 如請求項10述及之方法,進一步包括以下步驟:在該EMI遮罩和該基板之間形成包含該第一電路元件和該第二電路元件的一腔。
- 如請求項10述及之方法,進一步包括以下步驟:形成由該金屬殼、該複數個側壁、和該基板限界的一腔;及在該複數個側壁之間形成允許氣流穿過該腔的一或多個槽。
- 如請求項10述及之方法,進一步包括以下步驟:使用該內側壁表面上所包括的該複數條信號線的該部分而將該第二電路元件電耦合至該基板。
- 一種射頻多晶片積體電路封裝,包括:一基板,該基板具有耦合至該基板的一第一表面的至少 一個第一電路元件;及用於覆蓋該基板的至少一部分的裝置,該用於覆蓋的裝置包括:用於遮罩該封裝不受射頻輻射影響的裝置,用於絕緣的裝置,該用於絕緣的裝置耦合至該用於遮罩的裝置的一內表面的至少一部分,用於攜帶複數個電信號的裝置,該用於攜帶複數個電信號的裝置耦合至該用於絕緣的裝置並經由該用於絕緣的裝置與該用於遮罩的裝置電絕緣,複數個側壁,該複數個側壁耦合至該用於遮罩的裝置,該複數個側壁包括一內側壁表面,該內側壁表面包括該用於絕緣的裝置及該用於攜帶複數個電信號的裝置的至少一部分;及至少一個第二電路元件,該至少一個第二電路元件耦合至該用於覆蓋的裝置的一內表面,該用於覆蓋的裝置的該內表面的至少一部分面對該基板的該第一表面,並且該用於攜帶複數個電信號的裝置配置成向該第二電路元件提供電信號。
- 如請求項18述及之封裝,其中該用於遮罩的裝置進一步配置成向該第二電路元件提供一電接地。
- 如請求項19述及之封裝,其中該第二電路元件進一步耦合至該用於遮罩的裝置的該內表面。
- 如請求項18述及之封裝,其中該用於遮罩的裝置熱耦合至該第二電路元件並配置成消散由該第二電路元件產生的熱能。
- 如請求項18述及之封裝,其中該第一電路元件和該第二電路元件各自是一主動RF電路元件及/或一被動RF電路元件中的至少一者。
- 如請求項18述及之封裝,其中一或多個用於通風的裝置形成在該複數個側壁之間,該一或多個用於通風的裝置允許氣流穿過由具有該複數個側壁的該用於遮罩的裝置和該基板形成的一腔。
- 如請求項18述及之封裝,其中該內側壁表面使用該用於攜帶複數個電信號的裝置的該部分而將該第二電路元件電耦合至該基板。
- 如請求項18述及之封裝,其中該用於覆蓋的裝置和該基板形成包含該第一電路元件和該第二電路元件的一腔。
- 如請求項18述及之封裝,其中該封裝被納入一音樂播放機、一視訊播放機、一娛樂單元、一導航設備、一通訊設備、一行動電話、一智慧型電話、一個人數位助理、一固定位置終端、一平板電腦、及/或一膝上型電腦中的至少一者中。
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US13/794,487 US8987872B2 (en) | 2013-03-11 | 2013-03-11 | Electromagnetic interference enclosure for radio frequency multi-chip integrated circuit packages |
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JP2017143313A (ja) | 2017-08-17 |
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WO2014164186A1 (en) | 2014-10-09 |
US8987872B2 (en) | 2015-03-24 |
EP2973696A1 (en) | 2016-01-20 |
EP2973696B1 (en) | 2019-11-13 |
KR101657622B1 (ko) | 2016-09-30 |
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US20140252568A1 (en) | 2014-09-11 |
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