CN104701287B - 具有热点热管理部件的3dic封装 - Google Patents

具有热点热管理部件的3dic封装 Download PDF

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Publication number
CN104701287B
CN104701287B CN201410733546.8A CN201410733546A CN104701287B CN 104701287 B CN104701287 B CN 104701287B CN 201410733546 A CN201410733546 A CN 201410733546A CN 104701287 B CN104701287 B CN 104701287B
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China
Prior art keywords
substrate
conductive layer
packaging part
high heat
die stack
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CN201410733546.8A
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CN104701287A (zh
Inventor
洪文兴
黄思博
李祥帆
陈锦棠
吴集锡
郑心圃
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明提供了一种封装件，该封装件包括具有导电层的衬底，并且导电层包括暴露部分。管芯堆叠件设置在衬底上方并且电连接至导电层。高导热系数材料设置在衬底上方并且接触导电层的暴露部分。封装件还包括凸轮环，凸轮环位于高导热系数材料上方并且接触高导热系数材料。本发明涉及具有热点热管理部件的3DIC封装。

Description

具有热点热管理部件的3DIC封装
技术领域
本发明涉及具有热点热管理部件的3DIC封装。
背景技术
在集成电路的封装中，半导体管芯可以通过接合来堆叠，并且可以接合至其他封装组件，诸如中介层或封装衬底。产生的封装件被称作三维集成电路(3DIC)。散热是3DIC中的挑战。在有效地耗散在3DIC的内部管芯中生成的热量方面存在瓶颈。在这些热量可以传导至任何散热器之前，在内部管芯中生成的热量必须耗散至诸如外部管芯的外部组件。然而，在堆叠的管芯之间，存在不能有效地传导热量的其他材料，诸如底部填充物、模塑料等。因此，热量可能被捕获在底部堆叠管芯的内部区域中并且引起强烈的局部温度峰值(有时被称为热点)。此外，由处于堆叠管芯的底部处的器件生成的热量产生的热点也可能不利地影响位于堆叠管芯中的其他重叠的器件的电性能以及整个3DIC封装件的可靠性。
发明内容
为了解决现有技术中存在的问题，根据本发明的一个方面，提供了一种封装件，包括：衬底，包括导电层，其中，所述导电层包括暴露部分；管芯堆叠件，位于所述衬底上方并且电连接至所述导电层；高导热系数材料，位于所述衬底上方并且接触所述导电层的所述暴露部分；以及凸轮环，位于所述高导热系数材料上方并且接触所述高导热系数材料。
在上述封装件中，还包括位于所述衬底的部分上方并且覆盖所述衬底的部分的阻焊剂，其中，所述阻焊剂不覆盖所述导电层的所述暴露部分。
在上述封装件中，还包括热界面材料，所述热界面材料位于所述管芯堆叠件的顶面上方并且接触所述管芯堆叠件的顶面。
在上述封装件中，还包括凸轮盖，所述凸轮盖位于所述热界面材料的至少一部分上方并且接触所述热界面材料的至少一部分。
在上述封装件中，所述管芯堆叠件通过电源层、接地层或信号层电连接至所述导电层。
在上述封装件中，所述管芯堆叠件通过伪层电连接至所述导电层。
在上述封装件中，所述高导热系数材料包括热界面材料、银膏、焊料或它们的组合。
在上述封装件中，所述凸轮环包括突出部分，其中，所述突出部分延伸越过所述衬底的侧壁。
根据本发明的另一方面，还提供了一种封装件，包括：衬底，包括暴露的第一导电层；第一管芯堆叠件，包括电连接至底部管芯的一个或多个顶部管芯，其中，所述底部管芯包括电连接至所述第一导电层的第一逻辑核芯；第一高导热系数材料，位于所述衬底上方并且接触所述第一导电层；以及散热部件，位于所述第一高导热系数材料上方并且接触所述第一高导热系数材料。
在上述封装件中，所述底部管芯还包括第二逻辑核芯，所述封装件还包括：暴露的第二导电层，位于所述衬底中，其中，所述第二逻辑核芯电连接至所述第二导电层；以及第二高导热系数材料，位于所述衬底上方并且接触所述第二导电层，其中，所述散热部件位于所述第二高导热系数材料上方并且接触所述第二高导热系数材料。
在上述封装件中，所述第二导电层是与所述第一导电层分离的导电层。
在上述封装件中，所述第二导电层是与所述第一导电层相同的导电层。
在上述封装件中，所述一个或多个顶部管芯包括在横向上延伸越过所述底部管芯的侧壁的部分，所述封装件还包括：暴露的第三导电层，位于所述衬底中，其中，所述第三导电层电连接至所述第一导电层；以及第三高导热系数材料，设置在所述一个或多个顶部管芯的所述部分的底面的下面并且接触所述一个或多个顶部管芯的所述部分的底面，所述一个或多个顶部管芯延伸越过所述底部管芯的侧壁，其中，所述第三高导热系数材料位于所述衬底上方并且接触所述第三导电层。
在上述封装件中，还包括，将所述散热部件附接至所述衬底的粘合剂，其中，所述粘合剂包括沿着所述衬底的周界设置的第一部分。
在上述封装件中，所述粘合剂还包括在所述衬底的内部区域上设置的第二部分。
在上述封装件中，所述粘合剂还包括从所述衬底的周界向着所述封装件的管芯堆叠件区延伸的第三部分。
在上述封装件中，还包括：第二管芯堆叠件，位于所述衬底上方，其中，所述第二管芯堆叠件电连接至暴露的第四导电层；以及第四高导热系数材料，位于所述衬底上方并且接触所述第四导电层，其中，所述散热部件设置在所述第四高导热系数材料的上方并且接触所述第四高导热系数材料。
在上述封装件中，所述散热部件覆盖所述第一管芯堆叠件和所述第二管芯堆叠件，其中，所述第一管芯堆叠件高于所述第二管芯堆叠件，并且其中，位于所述第一管芯堆叠件上方的所述散热部件的第一底面高于位于所述第二管芯堆叠件上方的所述散热部件的第二底面。
根据本发明的又一方面，还提供了一种方法，包括：在封装衬底的前侧形成导电层；在所述封装衬底的前侧上方形成阻焊剂；图案化所述阻焊剂以暴露所述导电层的部分；将管芯堆叠件附接至所述封装衬底的前侧，其中，所述管芯堆叠件电连接至所述导电层；在所述导电层的暴露部分上方设置高导热系数材料，所述导热系数材料物理接触所述导电层的暴露部分；将散热部件附接至所述封装衬底的前侧，其中，所述散热部件与所述高导热系数材料物理接触。
在上述方法中，还包括在所述管芯堆叠件的顶面上方设置热界面材料，其中，所述散热部件与所述热界面材料物理接触。
在上述方法中，附接所述散热部件包括在所述封装衬底的前侧上分配粘合剂并且通过所述粘合剂将所述散热部件附接至所述封装衬底的前侧。
附图说明
为了更完全地理解实施例及其优势，现在将结合附图进行的以下描述作为参考，其中：
图1A至图1J是根据各个实施例的封装件在形成中的中间阶段的截面图和自上而下的视图；
图2A至图2D示出了根据各个可选实施例的具有可选的衬底结构的封装件的截面图和自上而下的视图；
图3示出了根据可选实施例的具有带有突出(overhang)结构的凸轮环的封装件的截面图；
图4示出了根据可选实施例的具有可选的管芯堆叠结构的封装件的截面图；
图5A和图5B示出了根据可选实施例的具有多个管芯堆叠件的封装件的截面图和自上而下的视图；以及
图6A和图6B示出了根据各个实施例的在封装件的操作期间的热性能特征。
具体实施方式
下面详细讨论了本发明的实施例的制造和使用。然而，应该理解，实施例提供了许多可以体现在各种具体环境中的适用的发明概念。讨论的具体实施例是说明性的，并且不限制本发明的范围。
根据各个示例性实施例提供了具有有效的热点热管理部件的封装件及其形成方法。示出形成封装件的中间阶段。讨论了实施例的变化。贯穿各个视图和说明性实施例，相同的参考标号用于指示相同的元件。
图1A示出了在形成三维集成电路(3DIC)封装件100中的初始阶段的截面图，3DIC封装件100包括堆叠在管芯12上的管芯10，从而形成管芯堆叠件10/12。在一些实施例中，管芯10是形成存储堆叠件的存储管芯。在可选实施例中，管芯10是逻辑管芯。在其他可选实施例中，管芯10包括逻辑管芯和存储管芯。管芯12可以是逻辑管芯，其可以进一步是中央处理单元(CPU)、图像处理单元(GPU)等。管芯10和12可以通过倒装芯片接合而接合在一起，其中金属凸块、焊料球等用于接合管芯10和12。
管芯12的顶视图尺寸大于管芯10的顶视图尺寸。如图1A中所示，管芯12可以横向地延伸超出管芯10，并且可以包括与管芯10重叠的部分12a和不与管芯10重叠的部分12b。包括管芯10和12的管芯堆叠件还接合至衬底14。衬底14可以是封装衬底、中介层、印刷电路板(PCB)等。诸如电阻器、电容器、变压器等的离散无源器件(未示出)也可以接合至衬底14。焊料球15附接至衬底14，其中管芯堆叠件10/12和焊料球15位于衬底14的相对两侧上。
衬底14包括导电部件，诸如导电层18和导电通孔20(包括通孔20’，请参照图1C)。导电层18和导电通孔20可以由任何合适的材料形成，分别诸如铜箔(例如，0.5盎司至2盎司厚的铜箔)和铜/铜合金。也可以使用其他导电材料。导电部件18/20可以用于封装件100中用于导热目的以将热量从管芯堆叠件10/12的中心耗散掉。在一些实施例中，导电部件18/20也可以用作电连接件，例如，如衬底14中的接地层、电源层和/或信号输入和输出(IO)层。在其他实施例中，一些或全部导电部件18/20可以不发挥电气功能并且可以被称为伪部件。
图案化的阻焊剂16设置在衬底14上方。阻焊剂16可以是覆盖衬底14的部分的保护层以保护衬底14不被损坏。阻焊剂16可以由聚合物形成，其也可以是光刻胶。例如，可以使用光刻技术实施阻焊剂16的图案化。图案化阻焊剂16以暴露衬底14中的顶部导电层18的部分(例如，部分14a和14b)。可以暴露衬底的部分14b以允许电连接至导电部件18/20。例如，在图1A中，部分14b对应于位于管芯堆叠件10/12的连接件(例如，焊料球)之间的管芯堆叠件10/12下面的衬底14的部分。在其他实施例中，部分14b也可以对应于衬底14的具有连接至离散无源器件(未示出)的电连接件的部分。也暴露衬底的部分14a。可以暴露部分14a用于散热的目的而不是电连接的目的。暴露部分14a可以通过暴露部分14b和导电部件18/20电连接至管芯堆叠件10/12。然而，在直接设置在暴露部分14a上方的封装件100中可以不存在电器件(例如，管芯堆叠件或无源组件)。
图1B示出了根据各个实施例的衬底14的详细的截面图。图1C示出了衬底14的可选实施例。如图1B和图1C所示，衬底14可以包括核芯14d和设置在核芯14d的前侧和后侧上的内建(build-up)层14c。通孔20’可以从核芯14d的前侧延伸并且电连接至核芯14d的后侧。核芯14d可以包括导电层18(例如，铜箔)。核芯14d可以包括两个(如图1B中所示)、四个(如图1C中所示)、六个、八个或更多的导电层18。导电层18的数目可以取决于封装件100的布局设计(例如，电路设计)，尽管额外的导电层可以增加衬底14的整体导热系数。
内建层14c包括互连结构，互连结构具有通过导电通孔20电连接的图案化的导电层18。在各个实施例中，导电部件18/20可以用作功能电气目的，诸如电源层、接地层和/或信号IO层。在各个其他实施例中，导电部件18/20可以包括用于增大的导热系数的伪部件。尽管在图1B和图1C中的核芯14d的每一侧上示出三个内建层14c，但是根据布局设计，可选实施例可以包括不同数目的内建层14c。
阻焊剂16设置在衬底14的前侧上方。可以图案化阻焊剂16以包括开口16a从而暴露位于衬底14中的导电层18的部分。特定开口16a允许器件(例如，管芯堆叠件10/12或无源器件)电连接至衬底14。在各个实施例中，至少一些开口16a可以用于散热，这在随后的段落中将详细地解释。阻焊剂17也可以设置在衬底14的后侧上方。也可以图案化阻焊剂17以包括暴露特定的导电层18的开口17a。焊料球(例如，图1A中的焊料球15)可以通过这些开口17a附接至衬底14。
在图1D中，实施回流以将位于管芯堆叠件10/12中的焊料球回流至衬底14。然后可以在管芯12和衬底14之间分配底部填充物22。
接下来，参照图1E，在管芯10和12上分配热界面材料(TIM)24。TIM 24包括部分24a，部分24a分配在管芯10的顶部上。此外，TIM 24包括部分24b，部分24b也分配在管芯12的部分12b的顶面上并且与管芯12的部分12b的顶面物理接触。TIM 24可以是具有良好导热系数的聚合物，导热系数可以在约3瓦每米开尔文(W/m·K)至约5W/m·K之间或更大。TIM部分24b可以形成环形件或可以不形成环形件。根据一些实施例，当形成环形件时，TIM部分24b环绕管芯10。在此实施例中，管芯12的部分12b也形成环绕管芯10的环形件。
此外，高导热系数(Tk)材料26分配在衬底14的暴露部分(即，图1A中的部分14a)上方。高Tk材料26可以与导线18物理接触，从而允许热量从导线18热传导至高Tk材料26。高Tk材料26可以是任何具有高导热系数的材料，导热系数可以在约3W/m·K和约50W/m·K之间或更大。例如，高Tk材料26可以是TIM(例如，由与TIM 24相同的材料形成)、焊料、银膏等。在各个实施例中，高Tk材料26可以具有约50μm至约100μm的厚度。
粘合剂28(例如，环氧树脂、硅树脂等)分配在衬底14的其他未被占据的部分上方。粘合剂28可以比TIM 24和高Tk材料26具有更好的粘附能力和更低的导电系数。例如，粘合剂28可以具有低于约0.5W/m·K的导电系数。粘合剂28可以设置为不干扰衬底14上方的其他部件(例如，器件堆叠件10/12、无源器件(未示出)和高Tk材料26)的放置。在各个实施例中，粘合剂28可以具有约100μm的厚度。
图1F示出了衬底14、阻焊剂16和粘合剂28的自上而下的视图。为了易于示出，从图1F中省略了高Tk材料26。管芯12的位置通过虚线39表示，而管芯12的逻辑核芯区通过虚线40表示。如图1F所示，暴露衬底14中的导电层18的位于管芯12和逻辑核芯40周围并且围绕管芯12和逻辑核芯40的部分。如将在后续的段落中更详细地解释，暴露的导电层18可以用作散热部件以将热量从逻辑核芯40传导开。暴露的导电层18的至少一部分也可以允许衬底14和管芯堆叠件10/12之间的电连接。
图1G示出了管芯堆叠件10/12的截面图和用于管芯10和12的逻辑平面布置图。可以对管芯10和12布局以最小化管芯10和12中的器件之间的热串扰并且改进散热。例如，管芯12可以包括逻辑核芯40和其他逻辑电路42。其他逻辑电路42可以包括一个或多个串行器/解串行器(串行解串器)。串解串器42是可以消耗相当高的功率量并且因此生成相当高的热量的逻辑控制电路。如图1G中所示，根据一些实施例，串行解串器42(或其他高功率电路)至少部分地并且可能全部地分配于管芯12的部分12b中，其中部分12b不与管芯10重叠。因此，由串行解串器42生成的热量效果可以不直接影响管芯10中的器件的功能性。
如图1G所示，逻辑核芯40可以至少部分地并且可能全部地位于管芯12的部分12a中，其中部分12a与管芯10重叠。也示出了管芯10(例如，存储管芯)的示例性平面布置图。存储管芯10可以包括多个动态随机存取存储器(DRAM)分区44。在没有热管理部件的情况下，来自逻辑核芯40的热量可以不利地影响管芯10中的重叠的器件(例如，DRAM分区44)的性能。因此，各个实施例可以包括各个热点热管理部件(例如，包括暴露的导电层18)以将热量从逻辑核芯40传导开，以便不负面地影响管芯10的性能。
图1H示出了附接至衬底14的散热凸轮环30的切片截面图。凸轮环30的底面可以通过粘合剂28粘附至衬底14。在封装件100(未示出)的自上而下的视图中，凸轮环30可以环绕管芯堆叠件10/12。凸轮环30具有高导热系数，例如，在约200W/m·K至约400W/m·K之间或更高，并且可以使用金属、金属合金等形成。例如，凸轮环30可以包括金属和/或金属合金，诸如Al、Cu、Ni、Co、它们的组合等。凸轮环30也可以由复合材料形成，例如，碳化硅、氮化铝、石墨等。凸轮环30的底面的各个部分可以接触TIM 24b和高Tk材料26。因此，凸轮环30允许热量从TIM 24b和高Tk材料26耗散而远离管芯堆叠件10/12。粘合剂32可以分配在凸轮环30的顶面的部分上方，粘合剂32可以基本上类似于粘合剂28。
接下来，参照图1I，散热凸轮盖34安装在管芯堆叠件10/12和凸轮环30上方。凸轮盖34可以由与凸轮环30基本上相同的材料形成，凸轮盖34具有高导热系数，例如，在约200W/m·K至约400W/m·K之间或更高。凸轮盖34包括底面34a和底面34b。底面34a和34b的位置设计为与管芯10(和TIM部分24a)的顶面的高度和粘合剂32的位置相符。在图1I中所示的各个实施例中，底面34a低于底面34b。底面34a与TIM部分24a接触，从而允许来自管芯10的热量穿过凸轮盖34耗散。底面34b与粘合剂32接触，粘合剂32将凸轮盖34粘附至凸轮环30。凸轮环30和凸轮盖34的顶面可以基本上是共平面的。通常，凸轮环30和凸轮盖34的组合可以被称为散热部件30/34。尽管图1I示出了凸轮环30和凸轮盖34是单独的部件，在可选实施例中，凸轮环30和凸轮盖34可以是单件散热部件30/34(例如，见图5A)。
图1J示出了根据各个实施例的从封装件100中的逻辑核芯40的热量耗散。箭头36示出从逻辑核芯40(和重叠的管芯10)的散热的路径。如图1J中所示，导电部件18/20、高Tk材料26和凸轮环30的组合在封装件100中形成用于从逻辑核芯40将热量传导开的热点热管理部件。管芯12的逻辑核芯40电连接至导电层18，导电层18具有位于衬底14的顶面(例如，图1A中的部分14a)上的暴露部分。如箭头36a所示，由逻辑核芯40(或管芯12的其他部分)生成的热量向下耗散至衬底14中的导电部件18/20。衬底14的散热部分不限于仅仅是最顶部的、暴露的导电层18。相反，多层互连的导电层18(例如，使用通孔20和通孔20’)可以用于将热量从管芯堆叠件10/12传导开。如箭头36b所示，然后通过导电部件18/20将热量从逻辑核芯40/管芯12横向传导开。最后，如箭头36c所示，热量通过导电层18的暴露部分、高Tk材料26和凸轮环30向上耗散。因此，使用衬底14中的导电部件可以将热量从管芯堆叠件10/12和逻辑核芯40传导开以避免或减小逻辑核芯40和管芯10中的电路(例如，DRAM电路)之间的热串扰。此外，TIM 24也可以通过凸轮环30和凸轮盖34将热量从管芯堆叠件10/12的顶面耗散掉。
图2A至图2D示出了根据各个可选实施例的封装件200的部分的截面图和自上而下的视图。图2A示出了封装件200的部分的截面图。封装件200基本上类似于封装件100，其中相同的参考标号对应相同的元件。然而，可以改变粘合剂28和衬底14的结构以便根据期望增加导热系数，例如，通过暴露导电层18的额外的部分。可以暴露导电层18的更大的面积以允许增加散热。例如，图2B示出了具有多个逻辑核芯40的管芯12，多个逻辑核芯40可以比单个逻辑核芯消耗更多的功率并且产生更多的热量。为了管理高热量水平，可以暴露导电层18的额外的部分以有效地将热量从管芯堆叠件10/12耗散掉。然而，暴露的导电层18的增加的表面积可能限制可衬底14的周界上的粘合材料28的可用面积，从而不利地影响凸轮环30的粘附。因此，额外的粘合材料28a可以设置在衬底14的内部区域上(例如，暴露的导电层18可以设置在粘合剂28之间)以用于增加粘附。
图2C示出了根据各个可选实施例的衬底14的自上而下的视图。在图2C中所示的结构中，管芯12包括三个逻辑核芯40。每个逻辑核芯均设置在单独的、不连续的暴露的导电层18(标记为18a-18c)上方。暴露的导电层18a-18c可以不连接，从而允许三个逻辑核芯40之间的热隔离。此外，暴露的导电层18a-18c可以具有不同的尺寸。例如，较大的逻辑核芯40可以设置在较大的暴露的导电层部分18a上方以允许增加散热。各个无源器件50(例如，电阻器、电容器、变压器等)也可以设置在衬底14上方，其中暴露的导电层18不与无源器件50重叠或连接。粘合剂28可以设置在周界的周围，并且延伸的额外的粘合材料28b可以垂直地和水平地延伸至衬底14的内部内(例如，朝向封装件的管芯堆叠件区)以改进粘附。
图2D示出了根据又一可选实施例的衬底14的自上而下的视图。在图2D中所示的结构中，管芯12包括两个逻辑核芯40。逻辑核芯40可以设置在管芯12的相对拐角上以增加两个核芯之间的热隔离。此外，逻辑核芯40可以设置在单独的、不连接的暴露的导电层18上方用于增加隔离。粘合剂28可以设置在周界周围并且从衬底14的拐角成对角线地延伸至衬底14的内部区域内(例如，朝向封装件的管芯堆叠件区)以包括粘合材料28c，进而改进粘附。如图2A至图2C所示，根据布局设计和管芯堆叠件10/12的结构/功率消耗水平，可以如期望地改变衬底14的结构。因此，衬底14不限于特定的布局，并且在其他实施例中也可以考虑衬底14的其他结构。
图3示出了根据各个可选实施例的具有可选的凸轮环结构的封装件300的截面图。封装件300基本上类似于封装件100，其中相同的参考标号对应相同的元件。然而，凸轮环300可以包括延伸越过粘合剂28和衬底14的侧壁的额外的突出部分30a。突出部分30a增加了凸轮环30的整体表面积，从而增加了散热。
图4示出了根据可选实施例的具有用于管芯堆叠件10/12的可选结构的封装件400的截面图。封装件400基本上类似于封装件100，其中相同的参考标号对应相同的元件。然而，管芯10可以在横向上延伸越过管芯12(即，管芯10可以与管芯12完全重叠并且覆盖管芯12)。由管芯12生成的热量可以产生热点并且可能影响管芯10的函数运算。为了管理这些热点，在封装件400中，额外的高Tk材料26(标记为26’)可以设置在管芯10下面并且邻近管芯12。在封装件400的自上而下的视图中，高Tk材料26’可以或可以不形成位于管芯12周围的环形件。与高Tk材料26’接触的衬底14的相应部分可以包括暴露的导电层18。
如封装件400(标记为400a)的详细视图中所示，来自管芯10的热量可以通过额外的高Tk材料26’、衬底14(例如，通过导电层18和可以包括通孔20’的导电通孔20)、高Tk材料26和凸轮环30耗散。通过箭头36示出了散热路径。如通过箭头52所示，来自管芯10的热量也可以通过TIM 24和凸轮盖34耗散。因此，高Tk材料26可以如期望地设置在衬底14上方以用于热点等的额外的热管理。
图5A至图5B示出了根据可选实施例的具有多个管芯堆叠件10/12的封装件500的截面图。封装件500基本上类似于封装件100，其中，相同的参考标号对应相同的元件。封装件500可以包括接合至衬底14的多个管芯堆叠件10/12。管芯堆叠件10/12可以是两个晶体管堆叠件、两个中介层叠件或它们的组合。此外，管芯10可以包装在模塑料54中，其中模塑料54的外侧壁可以与管芯12的外侧壁对准。在示出的实例中，存在两个管芯堆叠件10/12，但是其他实施例可以包括多于两个的管芯堆叠件10/12。
图5A示出了相应的封装件的截面图。凸轮环30和凸轮盖34可以是单件散热部件30/34。如图5A中所示，管芯堆叠件10/12可以具有彼此相等的或彼此不同的高度H1和H2。因此，散热部件30/34包括向下延伸至不同的水平处的多个部分30’/34’以补偿管芯堆叠件10/12的任何高度差。散热部件30/34可以与靠近管芯堆叠件10/12设置的高Tk材料26接触。散热部件30/34还可以与TIM 24接触，TIM 24可以向下延伸并且接触管芯堆叠件10/12的侧壁。
图5B示出了衬底14的自上而下的视图。如箭头36所示，来自逻辑核芯40的热量通过封装件500中的热管理部件(即，暴露的导电层18、高Tk材料26和散热部件30/34)从管芯堆叠件10/12耗散掉。因此，多个不同尺寸的管芯堆叠件可以合并在具有热管理部件的同一封装件中以将热量从管芯堆叠件10/12的中心区域耗散掉。
通过使用热管理部件(例如，衬底中的暴露的导电层、高Tk材料和凸轮环/盖的组合)，封装件中的热量可以耗散至对任何重叠的管芯的功能具有更小影响的外围区域。在图6A(示出底部管芯12的操作温度)和图6B(示出了顶部管芯10的操作温度)中的轮廓图600中示出了模拟封装件中的温度分布的结果的模拟，该封装件包括具有热管理部件的堆叠管芯。如通过图6A所示，热点从逻辑核芯40耗散至管芯12的外围区域。此外，根据实施例，管芯12的最大操作温度602从常规封装件中的96.1℃降低至90.1℃。根据实施例，顶部管芯10的最大操作温度604从常规封装件中的93.3℃降低至89.3℃。因此，通过采用本发明的实施例的热管理部件，不仅降低了封装件的操作温度，而且将热点耗散至管芯堆叠件的外围区域以便对管芯堆叠件中的其他器件具有更小的影响。
根据一个实施例，一种封装件包括具有导电层的衬底，并且导电层包括暴露部分。管芯堆叠件设置在衬底上方并且电连接至导电层。高导热系数材料设置在衬底上方并且接触导电层的暴露部分。封装件还包括凸轮环，凸轮环位于高导热系数材料的上方并且接触高导热系数材料。
根据另一实施例，一种封装件包括具有暴露的导电层的衬底。封装件还包括具有电连接至底部管芯的一个或多个顶部管芯的管芯堆叠件，其中，底部管芯包括电连接至导电层的逻辑核芯。高导热系数材料设置在衬底上方并且接触导电层，并且凸轮环设置在高导热系数材料上方并且接触高导热系数材料。
根据又一实施例，一种方法包括在封装衬底的前侧上形成导电层以及在封装衬底的前侧上方形成阻焊剂。图案化阻焊剂以暴露导电层的部分。管芯堆叠件附接至封装衬底的前侧，其中，管芯堆叠件电连接至导电层。高导热系数材料设置在导电层的暴露部分上方并且物理接触导电层的暴露部分。该方法还包括将散热部件附接至封装衬底的前侧，其中散热部件与高导热系数材料物理接触。
尽管已经详细地描述了实施例及其优势，但是应该理解，在不背离由所附权利要求限定的实施例的精神和范围的情况下，本文中可以做出各种改变、替代和变化。此外，本申请的范围不旨在限于说明书中描述的工艺、机器装置、制造、物质组成、工具、方法和步骤的特定实施例。本领域的普通技术人员将容易从本发明理解，根据本发明，可以利用现有的或今后开发的实施与本文所描述的相应实施例基本相同的功能或者实现基本相同的结果的工艺、机器装置、制造、物质组成、工具、方法或步骤。因此，所附权利要求旨在将这些工艺、机器装置、制造、物质组成、工具、方法或步骤包括在它们的范围内。此外，每个权利要求构成单独的实施例，并且各个权利要求和实施例的组合在本发明的范围内。

Claims (20)

1.一种封装件，包括：
衬底，包括导电层，其中，所述导电层包括暴露部分；
管芯堆叠件，位于所述衬底上方并且电连接至所述导电层；
高导热系数材料，位于所述衬底上方并且接触所述导电层的所述暴露部分；
凸轮环，位于所述高导热系数材料上方并且接触所述高导热系数材料；以及
阻焊剂，位于所述衬底的部分上方并且覆盖所述衬底的部分，其中，所述阻焊剂不覆盖所述导电层的所述暴露部分。
2.根据权利要求1所述的封装件，还包括热界面材料，所述热界面材料位于所述管芯堆叠件的顶面上方并且接触所述管芯堆叠件的顶面。
3.根据权利要求2所述的封装件，还包括凸轮盖，所述凸轮盖位于所述热界面材料的至少一部分上方并且接触所述热界面材料的至少一部分。
4.根据权利要求1所述的封装件，其中，所述管芯堆叠件通过电源层、接地层或信号层电连接至所述导电层。
5.根据权利要求1所述的封装件，其中，所述管芯堆叠件通过伪层电连接至所述导电层。
6.根据权利要求1所述的封装件，其中，所述高导热系数材料包括热界面材料、银膏、焊料或它们的组合。
7.根据权利要求1所述的封装件，其中，所述凸轮环包括突出部分，其中，所述突出部分延伸越过所述衬底的侧壁。
8.一种封装件，包括：
衬底，包括暴露的第一导电层；
第一管芯堆叠件，包括电连接至底部管芯的一个或多个顶部管芯，其中，所述底部管芯包括电连接至所述第一导电层的第一逻辑核芯；
第一高导热系数材料，位于所述衬底上方并且接触所述第一导电层；
散热部件，位于所述第一高导热系数材料上方并且接触所述第一高导热系数材料；以及
阻焊剂，位于所述衬底的部分上方并且覆盖所述衬底的部分，其中，所述阻焊剂被图案化为暴露所述第一导电层的部分。
9.根据权利要求8所述的封装件，其中，所述底部管芯还包括第二逻辑核芯，所述封装件还包括：
暴露的第二导电层，位于所述衬底中，其中，所述第二逻辑核芯电连接至所述第二导电层；以及
第二高导热系数材料，位于所述衬底上方并且接触所述第二导电层，其中，所述散热部件位于所述第二高导热系数材料上方并且接触所述第二高导热系数材料。
10.根据权利要求9所述的封装件，其中，所述第二导电层是与所述第一导电层分离的导电层。
11.根据权利要求9所述的封装件，其中，所述第二导电层是与所述第一导电层相同的导电层。
12.根据权利要求8所述的封装件，其中，所述一个或多个顶部管芯包括在横向上延伸越过所述底部管芯的侧壁的部分，所述封装件还包括：
暴露的第三导电层，位于所述衬底中，其中，所述第三导电层电连接至所述第一导电层；以及
第三高导热系数材料，设置在所述一个或多个顶部管芯的所述部分的底面的下面并且接触所述一个或多个顶部管芯的所述部分的底面，所述一个或多个顶部管芯延伸越过所述底部管芯的侧壁，其中，所述第三高导热系数材料位于所述衬底上方并且接触所述第三导电层。
13.根据权利要求8所述的封装件，还包括，将所述散热部件附接至所述衬底的粘合剂，其中，所述粘合剂包括沿着所述衬底的周界设置的第一部分。
14.根据权利要求13所述的封装件，其中，所述粘合剂还包括在所述衬底的内部区域上设置的第二部分。
15.根据权利要求13所述的封装件，其中，所述粘合剂还包括从所述衬底的周界向着所述封装件的管芯堆叠件区延伸的第三部分。
16.根据权利要求8所述的封装件，还包括：
第二管芯堆叠件，位于所述衬底上方，其中，所述第二管芯堆叠件电连接至暴露的第四导电层；以及
第四高导热系数材料，位于所述衬底上方并且接触所述第四导电层，其中，所述散热部件设置在所述第四高导热系数材料的上方并且接触所述第四高导热系数材料。
17.根据权利要求16所述的封装件，其中，所述散热部件覆盖所述第一管芯堆叠件和所述第二管芯堆叠件，其中，所述第一管芯堆叠件高于所述第二管芯堆叠件，并且其中，位于所述第一管芯堆叠件上方的所述散热部件的第一底面高于位于所述第二管芯堆叠件上方的所述散热部件的第二底面。
18.一种形成封装件的方法，包括：
在封装衬底的前侧形成导电层；
在所述封装衬底的前侧上方形成阻焊剂；
图案化所述阻焊剂以暴露所述导电层的部分；
将管芯堆叠件附接至所述封装衬底的前侧，其中，所述管芯堆叠件电连接至所述导电层；
在所述导电层的暴露部分上方设置高导热系数材料，所述高导热系数材料物理接触所述导电层的暴露部分；
将散热部件附接至所述封装衬底的前侧，其中，所述散热部件与所述高导热系数材料物理接触。
19.根据权利要求18所述的方法，还包括在所述管芯堆叠件的顶面上方设置热界面材料，其中，所述散热部件与所述热界面材料物理接触。
20.根据权利要求18所述的方法，其中，附接所述散热部件包括在所述封装衬底的前侧上分配粘合剂并且通过所述粘合剂将所述散热部件附接至所述封装衬底的前侧。
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