TWI525686B - 基板洗淨方法 - Google Patents

基板洗淨方法 Download PDF

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Publication number
TWI525686B
TWI525686B TW101134106A TW101134106A TWI525686B TW I525686 B TWI525686 B TW I525686B TW 101134106 A TW101134106 A TW 101134106A TW 101134106 A TW101134106 A TW 101134106A TW I525686 B TWI525686 B TW I525686B
Authority
TW
Taiwan
Prior art keywords
substrate
cleaning
washing
washed
copper
Prior art date
Application number
TW101134106A
Other languages
English (en)
Chinese (zh)
Other versions
TW201335987A (zh
Inventor
石橋知淳
Original Assignee
荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荏原製作所股份有限公司 filed Critical 荏原製作所股份有限公司
Publication of TW201335987A publication Critical patent/TW201335987A/zh
Application granted granted Critical
Publication of TWI525686B publication Critical patent/TWI525686B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW101134106A 2012-02-23 2012-09-18 基板洗淨方法 TWI525686B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012037395A JP5866227B2 (ja) 2012-02-23 2012-02-23 基板洗浄方法

Publications (2)

Publication Number Publication Date
TW201335987A TW201335987A (zh) 2013-09-01
TWI525686B true TWI525686B (zh) 2016-03-11

Family

ID=49001522

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101134106A TWI525686B (zh) 2012-02-23 2012-09-18 基板洗淨方法

Country Status (4)

Country Link
US (1) US9142399B2 (https=)
JP (1) JP5866227B2 (https=)
KR (1) KR20130097053A (https=)
TW (1) TWI525686B (https=)

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JP2014130881A (ja) * 2012-12-28 2014-07-10 Ebara Corp 研磨装置
KR102047704B1 (ko) 2013-08-16 2019-12-02 엘지전자 주식회사 이동 단말기 및 이의 제어 방법
JP6279276B2 (ja) * 2013-10-03 2018-02-14 株式会社荏原製作所 基板洗浄装置及び基板処理装置
JP2015099852A (ja) * 2013-11-19 2015-05-28 株式会社荏原製作所 基板洗浄装置および基板処理装置
US10090189B2 (en) 2013-11-19 2018-10-02 Ebara Corporation Substrate cleaning apparatus comprising a second jet nozzle surrounding a first jet nozzle
JP6339351B2 (ja) * 2013-11-25 2018-06-06 株式会社荏原製作所 基板洗浄装置および基板処理装置
JP6321353B2 (ja) * 2013-11-19 2018-05-09 株式会社荏原製作所 基板洗浄装置および基板処理装置
JP6389089B2 (ja) * 2014-09-18 2018-09-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2016082195A (ja) * 2014-10-22 2016-05-16 Ｔｏｗａ株式会社 切断装置及び切断方法
JP6313189B2 (ja) * 2014-11-04 2018-04-18 東芝メモリ株式会社 半導体装置の製造方法
JP6797526B2 (ja) * 2014-11-11 2020-12-09 株式会社荏原製作所 基板洗浄装置
JP6543534B2 (ja) 2015-08-26 2019-07-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10388537B2 (en) 2016-04-15 2019-08-20 Samsung Electronics Co., Ltd. Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same
KR102338647B1 (ko) 2016-05-09 2021-12-13 가부시키가이샤 에바라 세이사꾸쇼 기판 세정 장치
JP6934918B2 (ja) * 2016-05-09 2021-09-15 株式会社荏原製作所 基板洗浄装置
KR20170128801A (ko) 2016-05-16 2017-11-24 삼성전자주식회사 기판 세정 방법 및 이를 수행하기 위한 장치
CN106513351B (zh) * 2016-11-26 2019-04-02 王辉 一种电动汽车充电桩专用清洗装置及其清洗方法
JP6758247B2 (ja) * 2017-05-10 2020-09-23 株式会社荏原製作所 洗浄装置および基板処理装置、洗浄装置のメンテナンス方法、並びにプログラム
JP6979935B2 (ja) * 2018-10-24 2021-12-15 三菱電機株式会社 半導体製造装置および半導体製造方法
US11791173B2 (en) 2019-03-21 2023-10-17 Samsung Electronics Co., Ltd. Substrate cleaning equipment, substrate treatment system including the same, and method of fabricating semiconductor device using the substrate cleaning equipment
JP2020184581A (ja) * 2019-05-08 2020-11-12 株式会社荏原製作所 基板処理装置および基板処理方法
JP7348623B2 (ja) * 2019-05-28 2023-09-21 アイオン株式会社 基板洗浄用ブラシ
JP2021048336A (ja) * 2019-09-20 2021-03-25 三菱電機株式会社 処理液生成方法、処理液生成機構、半導体製造装置及び半導体製造方法
JP7564822B2 (ja) 2019-12-11 2024-10-09 株式会社荏原製作所 基板洗浄システムおよび基板洗浄方法
TWI789842B (zh) * 2020-09-11 2023-01-11 日商芝浦機械電子裝置股份有限公司 基板處理裝置
KR102862397B1 (ko) 2020-09-18 2025-09-22 삼성전자주식회사 기판 세정 방법 및 그를 포함하는 기판 제조 방법
US11728185B2 (en) 2021-01-05 2023-08-15 Applied Materials, Inc. Steam-assisted single substrate cleaning process and apparatus
JP7628897B2 (ja) 2021-06-15 2025-02-12 株式会社荏原製作所 基板洗浄装置、基板処理装置、ブレークイン装置、基板に付着する微粒子数の推定方法、基板洗浄部材の汚染度合い判定方法およびブレークイン処理の判定方法
JP7720208B2 (ja) * 2021-09-22 2025-08-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US12285837B2 (en) 2021-11-18 2025-04-29 SanDisk Technologies, Inc. Wafer surface chemical distribution sensing system and methods for operating the same
US12599937B2 (en) * 2024-01-23 2026-04-14 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal
CN119456556B (zh) * 2024-11-14 2025-11-04 中国航发西安动力控制科技有限公司 一种航空齿轮类零部件清洁度控制方法

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Publication number Priority date Publication date Assignee Title
JP3003684B1 (ja) * 1998-09-07 2000-01-31 日本電気株式会社 基板洗浄方法および基板洗浄液
JP3875456B2 (ja) * 2000-06-29 2007-01-31 株式会社東芝 洗浄方法および洗浄装置
JP3667273B2 (ja) * 2001-11-02 2005-07-06 Ｎｅｃエレクトロニクス株式会社 洗浄方法および洗浄液
US20080047583A1 (en) * 2005-01-06 2008-02-28 Akira Fukunaga Substrate Processing Method and Apparatus
JP4769790B2 (ja) * 2005-02-07 2011-09-07 株式会社荏原製作所 基板処理方法、基板処理装置及び制御プログラム
JP2008153322A (ja) * 2006-12-15 2008-07-03 Dainippon Screen Mfg Co Ltd 二流体ノズル、基板処理装置および基板処理方法
JP2009231628A (ja) 2008-03-24 2009-10-08 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2009238896A (ja) * 2008-03-26 2009-10-15 Renesas Technology Corp 半導体集積回路装置の製造方法
JP5744382B2 (ja) * 2008-07-24 2015-07-08 株式会社荏原製作所 基板処理装置および基板処理方法
JP5294944B2 (ja) * 2009-03-31 2013-09-18 株式会社荏原製作所 基板の洗浄方法

Also Published As

Publication number Publication date
US20130220368A1 (en) 2013-08-29
KR20130097053A (ko) 2013-09-02
US9142399B2 (en) 2015-09-22
JP2013175496A (ja) 2013-09-05
TW201335987A (zh) 2013-09-01
JP5866227B2 (ja) 2016-02-17

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