JP5866227B2 - 基板洗浄方法 - Google Patents

基板洗浄方法 Download PDF

Info

Publication number
JP5866227B2
JP5866227B2 JP2012037395A JP2012037395A JP5866227B2 JP 5866227 B2 JP5866227 B2 JP 5866227B2 JP 2012037395 A JP2012037395 A JP 2012037395A JP 2012037395 A JP2012037395 A JP 2012037395A JP 5866227 B2 JP5866227 B2 JP 5866227B2
Authority
JP
Japan
Prior art keywords
cleaning
substrate
substrate surface
roll
scrub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012037395A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013175496A5 (https=
JP2013175496A (ja
Inventor
知淳 石橋
知淳 石橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2012037395A priority Critical patent/JP5866227B2/ja
Priority to TW101134106A priority patent/TWI525686B/zh
Priority to KR1020120121073A priority patent/KR20130097053A/ko
Priority to US13/758,226 priority patent/US9142399B2/en
Publication of JP2013175496A publication Critical patent/JP2013175496A/ja
Publication of JP2013175496A5 publication Critical patent/JP2013175496A5/ja
Application granted granted Critical
Publication of JP5866227B2 publication Critical patent/JP5866227B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012037395A 2012-02-23 2012-02-23 基板洗浄方法 Active JP5866227B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012037395A JP5866227B2 (ja) 2012-02-23 2012-02-23 基板洗浄方法
TW101134106A TWI525686B (zh) 2012-02-23 2012-09-18 基板洗淨方法
KR1020120121073A KR20130097053A (ko) 2012-02-23 2012-10-30 기판 세정 방법
US13/758,226 US9142399B2 (en) 2012-02-23 2013-02-04 Substrate cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012037395A JP5866227B2 (ja) 2012-02-23 2012-02-23 基板洗浄方法

Publications (3)

Publication Number Publication Date
JP2013175496A JP2013175496A (ja) 2013-09-05
JP2013175496A5 JP2013175496A5 (https=) 2015-10-15
JP5866227B2 true JP5866227B2 (ja) 2016-02-17

Family

ID=49001522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012037395A Active JP5866227B2 (ja) 2012-02-23 2012-02-23 基板洗浄方法

Country Status (4)

Country Link
US (1) US9142399B2 (https=)
JP (1) JP5866227B2 (https=)
KR (1) KR20130097053A (https=)
TW (1) TWI525686B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220168166A (ko) 2021-06-15 2022-12-22 가부시키가이샤 에바라 세이사꾸쇼 기판 세정 장치, 기판 처리 장치, 브레이크 인 장치, 기판에 부착되는 미립자 수의 추정 방법, 기판 세정 부재의 오염 정도 판정 방법 및 브레이크 인 처리의 판정 방법
US12220732B2 (en) 2019-12-11 2025-02-11 Ebara Corporation Substrate cleaning system and substrate cleaning method

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014130881A (ja) * 2012-12-28 2014-07-10 Ebara Corp 研磨装置
KR102047704B1 (ko) 2013-08-16 2019-12-02 엘지전자 주식회사 이동 단말기 및 이의 제어 방법
JP6279276B2 (ja) * 2013-10-03 2018-02-14 株式会社荏原製作所 基板洗浄装置及び基板処理装置
JP2015099852A (ja) * 2013-11-19 2015-05-28 株式会社荏原製作所 基板洗浄装置および基板処理装置
US10090189B2 (en) 2013-11-19 2018-10-02 Ebara Corporation Substrate cleaning apparatus comprising a second jet nozzle surrounding a first jet nozzle
JP6339351B2 (ja) * 2013-11-25 2018-06-06 株式会社荏原製作所 基板洗浄装置および基板処理装置
JP6321353B2 (ja) * 2013-11-19 2018-05-09 株式会社荏原製作所 基板洗浄装置および基板処理装置
JP6389089B2 (ja) * 2014-09-18 2018-09-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2016082195A (ja) * 2014-10-22 2016-05-16 Ｔｏｗａ株式会社 切断装置及び切断方法
JP6313189B2 (ja) * 2014-11-04 2018-04-18 東芝メモリ株式会社 半導体装置の製造方法
JP6797526B2 (ja) * 2014-11-11 2020-12-09 株式会社荏原製作所 基板洗浄装置
JP6543534B2 (ja) 2015-08-26 2019-07-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10388537B2 (en) 2016-04-15 2019-08-20 Samsung Electronics Co., Ltd. Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same
KR102338647B1 (ko) 2016-05-09 2021-12-13 가부시키가이샤 에바라 세이사꾸쇼 기판 세정 장치
JP6934918B2 (ja) * 2016-05-09 2021-09-15 株式会社荏原製作所 基板洗浄装置
KR20170128801A (ko) 2016-05-16 2017-11-24 삼성전자주식회사 기판 세정 방법 및 이를 수행하기 위한 장치
CN106513351B (zh) * 2016-11-26 2019-04-02 王辉 一种电动汽车充电桩专用清洗装置及其清洗方法
JP6758247B2 (ja) * 2017-05-10 2020-09-23 株式会社荏原製作所 洗浄装置および基板処理装置、洗浄装置のメンテナンス方法、並びにプログラム
JP6979935B2 (ja) * 2018-10-24 2021-12-15 三菱電機株式会社 半導体製造装置および半導体製造方法
US11791173B2 (en) 2019-03-21 2023-10-17 Samsung Electronics Co., Ltd. Substrate cleaning equipment, substrate treatment system including the same, and method of fabricating semiconductor device using the substrate cleaning equipment
JP2020184581A (ja) * 2019-05-08 2020-11-12 株式会社荏原製作所 基板処理装置および基板処理方法
JP7348623B2 (ja) * 2019-05-28 2023-09-21 アイオン株式会社 基板洗浄用ブラシ
JP2021048336A (ja) * 2019-09-20 2021-03-25 三菱電機株式会社 処理液生成方法、処理液生成機構、半導体製造装置及び半導体製造方法
TWI789842B (zh) * 2020-09-11 2023-01-11 日商芝浦機械電子裝置股份有限公司 基板處理裝置
KR102862397B1 (ko) 2020-09-18 2025-09-22 삼성전자주식회사 기판 세정 방법 및 그를 포함하는 기판 제조 방법
US11728185B2 (en) 2021-01-05 2023-08-15 Applied Materials, Inc. Steam-assisted single substrate cleaning process and apparatus
JP7720208B2 (ja) * 2021-09-22 2025-08-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US12285837B2 (en) 2021-11-18 2025-04-29 SanDisk Technologies, Inc. Wafer surface chemical distribution sensing system and methods for operating the same
US12599937B2 (en) * 2024-01-23 2026-04-14 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal
CN119456556B (zh) * 2024-11-14 2025-11-04 中国航发西安动力控制科技有限公司 一种航空齿轮类零部件清洁度控制方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3003684B1 (ja) * 1998-09-07 2000-01-31 日本電気株式会社 基板洗浄方法および基板洗浄液
JP3875456B2 (ja) * 2000-06-29 2007-01-31 株式会社東芝 洗浄方法および洗浄装置
JP3667273B2 (ja) * 2001-11-02 2005-07-06 Ｎｅｃエレクトロニクス株式会社 洗浄方法および洗浄液
US20080047583A1 (en) * 2005-01-06 2008-02-28 Akira Fukunaga Substrate Processing Method and Apparatus
JP4769790B2 (ja) * 2005-02-07 2011-09-07 株式会社荏原製作所 基板処理方法、基板処理装置及び制御プログラム
JP2008153322A (ja) * 2006-12-15 2008-07-03 Dainippon Screen Mfg Co Ltd 二流体ノズル、基板処理装置および基板処理方法
JP2009231628A (ja) 2008-03-24 2009-10-08 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2009238896A (ja) * 2008-03-26 2009-10-15 Renesas Technology Corp 半導体集積回路装置の製造方法
JP5744382B2 (ja) * 2008-07-24 2015-07-08 株式会社荏原製作所 基板処理装置および基板処理方法
JP5294944B2 (ja) * 2009-03-31 2013-09-18 株式会社荏原製作所 基板の洗浄方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12220732B2 (en) 2019-12-11 2025-02-11 Ebara Corporation Substrate cleaning system and substrate cleaning method
KR20220168166A (ko) 2021-06-15 2022-12-22 가부시키가이샤 에바라 세이사꾸쇼 기판 세정 장치, 기판 처리 장치, 브레이크 인 장치, 기판에 부착되는 미립자 수의 추정 방법, 기판 세정 부재의 오염 정도 판정 방법 및 브레이크 인 처리의 판정 방법
US12128449B2 (en) 2021-06-15 2024-10-29 Ebara Corporation Substrate cleaning device, substrate processing apparatus, break-in device, method for estimating number of fine particles adhering to substrate, method for determining degree of contamination of substrate cleaning member, and method for determining break-in processing

Also Published As

Publication number Publication date
US20130220368A1 (en) 2013-08-29
KR20130097053A (ko) 2013-09-02
US9142399B2 (en) 2015-09-22
JP2013175496A (ja) 2013-09-05
TW201335987A (zh) 2013-09-01
TWI525686B (zh) 2016-03-11

Similar Documents

Publication Publication Date Title
JP5866227B2 (ja) 基板洗浄方法
US11837477B2 (en) Washing device and washing method
US20130098397A1 (en) Substrate cleaning method and substrate cleaning apparatus
JP2013214737A (ja) 基板処理方法及び基板処理装置
KR102382453B1 (ko) 기판 세정 장치 및 기판 처리 장치
JP2013175496A5 (https=)
JP2014082470A (ja) 基板処理装置
KR20150004751A (ko) 기판 세정 장치 및 기판 세정 방법
WO2018030254A1 (ja) 化学機械研磨後の基板洗浄技術
US9630296B2 (en) Substrate processing apparatus
KR102103321B1 (ko) 기판 세정 장치 및 기판 세정 방법
JP7290695B2 (ja) 超音波洗浄装置および洗浄具のクリーニング装置
US9640384B2 (en) Substrate cleaning apparatus and substrate cleaning method
JP6345393B2 (ja) 基板洗浄装置および基板洗浄方法
US20140182632A1 (en) Substrate cleaning apparatus and substrate cleaning method
US20080237066A1 (en) Electrolytic processing unit device, and method for electrolytic processing, washing, and drying
JP2015103647A (ja) 基板洗浄装置および基板処理装置
WO2022187093A1 (en) Drying system with integrated substrate alignment stage
US20240213045A1 (en) Substrate cleaning apparatus and substrate cleaning method
US20050170980A1 (en) ER cleaning composition and method
JP6431159B2 (ja) 基板洗浄装置
JP2023156015A (ja) 基板洗浄装置及び基板処理方法
JP2015023085A (ja) 基板洗浄装置および基板洗浄方法
JP2023005338A (ja) 基板乾燥装置及び基板乾燥方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140925

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150826

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20150826

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20151005

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151215

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160104

R150 Certificate of patent or registration of utility model

Ref document number: 5866227

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250