TWI508177B - 以原子層沉積輔助同形電漿浸潤離子佈植的新穎方法 - Google Patents
以原子層沉積輔助同形電漿浸潤離子佈植的新穎方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 111
- 238000000231 atomic layer deposition Methods 0.000 title description 24
- 238000005468 ion implantation Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 190
- 239000002243 precursor Substances 0.000 claims description 123
- 239000002019 doping agent Substances 0.000 claims description 112
- 239000007789 gas Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 24
- 230000003197 catalytic effect Effects 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- -1 oxygen radical compounds Chemical class 0.000 claims description 14
- 238000010926 purge Methods 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 150000001495 arsenic compounds Chemical class 0.000 claims description 3
- 150000001735 carboxylic acids Chemical class 0.000 claims description 3
- 150000001639 boron compounds Chemical class 0.000 claims description 2
- 150000002978 peroxides Chemical class 0.000 claims 2
- 150000002222 fluorine compounds Chemical class 0.000 claims 1
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 150000002903 organophosphorus compounds Chemical group 0.000 claims 1
- 239000012688 phosphorus precursor Substances 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 74
- 230000008569 process Effects 0.000 description 68
- 239000010410 layer Substances 0.000 description 64
- 150000002500 ions Chemical class 0.000 description 30
- 238000000151 deposition Methods 0.000 description 28
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- 230000008021 deposition Effects 0.000 description 24
- 230000005684 electric field Effects 0.000 description 20
- 239000007943 implant Substances 0.000 description 12
- 239000002356 single layer Substances 0.000 description 12
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
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- 238000001994 activation Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 229910000085 borane Inorganic materials 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
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- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
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- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 2
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- 150000004767 nitrides Chemical class 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
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- 238000005280 amorphization Methods 0.000 description 1
- 150000004982 aromatic amines Chemical group 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 150000001622 bismuth compounds Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- 229910017052 cobalt Inorganic materials 0.000 description 1
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- 125000000524 functional group Chemical group 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000007527 lewis bases Chemical class 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
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- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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Description
本發明係有關於一種製造半導體元件的方法,且特別係有關於一種以原子層沉積法輔助電漿佈植而在基板上形成摻雜區之方法。
在半導體製造過程中,通常需要將不純物放入純物質中。此種稱為「摻雜(doping)」的製程可使材料具有欲求性質,例如提高導電性。在許多製程中,將各種原子或離子佈植於半導體或半導體衍生物基板中是有利的。例如,一般常將硼、磷和砷的原子或離子佈植於矽基板以產生「摻雜」區,作為固態電晶體的源區和汲區。在一些例子中,在進行摻雜之前,會先使基板上需進行摻雜的區域進行「非晶質化(amorphizing)」處理。藉由轟擊矽、鍺或氬原子,打亂基板的晶形結構並產生通道,使摻質可穿透至基板的更深處。在其它的應用中,可使用氮、氧、氫、碳、氟和各種金屬(例如,銦、銻、鈷和鎳)作為摻質來控制導電性,或是界面處的擴散程度。
一般有兩種方式可佈植摻質。在一些處理方式中,摻質被佈植於基板的表面上,之後進行熱處理使摻質擴散進入基板中。在另一些處理方式中,摻質被游離成電漿,之後利用電場驅使具能量的粒子進入基板中,之
後,將基板進行熱處理以使摻質分佈更均勻,並藉由大量高速穿過的離子修補晶體結構中的破裂部份。在此兩種型態的處理方式中,熱處理使基板退火,促使摻質及周圍晶體中的空隙位置的原子移動至晶格節點(lattice point)。在控制電性的應用方面,此種移動「活化」了摻質,藉由產生可傳遞穿過晶格的摻質的電性來控制電性,且一般可強化晶體,此種技術對擴散控制應用而言是重要的。
一般理想的情沉是使目標區域的摻質均勻分佈。在控制導電性的應用方面,均勻分佈的摻質保證目標區有均勻的性質。在擴散控制的應用方面,均勻分佈的摻質保證不使不希望移動的原子,具有開放性的擴散方式。在非晶質化的應用方面,均勻分佈的摻質保證之後摻質路徑的密度為均勻的。在佈植後所進行的熱處理可促使摻質平均分佈於目標區。
近半世紀以來,半導體工業皆遵循著摩爾定律:積體電路上的電晶體密度,約每兩年會增長一倍。產業依循著此條路持續地演進,使得基板上需要更小特徵圖形。現在所製造的堆疊型電晶體(stack transistor),尺寸為50至100奈米(nm),下一世代的元件尺寸約為40奈米,且元件的設計朝向20奈米或更小的尺寸努力。隨著元件持續地變小,基板上的特徵圖形深寬比(aspect ratio)(高度對寬度的比率)同時增加。現在所生產元件特徵結構的深寬比約達到4:1,將來的元件會需要高達
100:1或更高的深寬比。
較高的深寬比和較小的元件尺寸使摻質佈植製程面臨挑戰。例如,經常需要將摻質佈植在基板電場區(field region)中溝槽之底部或側面,以形成特徵結構。高能佈植製程具有方向性,電場傾向於將離子以與基板表面正交(orthogonal)的方向驅動,離子會輕易地撞擊基板的電場區,並可短距離穿透溝槽。但電偏壓會驅使離子朝向電場區表面或溝槽側壁移動,不使離子穿透溝槽底部。高能佈植會驅使離子朝溝槽的底部移動,但一般不會達到同形(conformal)佈植的目標,且可能會造成在溝槽底部和電場區出現過多佈植(相較於側壁而言)。
第1A-1D圖繪示了使用傳統佈植技術的基板。第1A圖繪示了在佈植製程中周圍具有特徵電場區的基板100。在不使用電漿的製程下,可佈植層102,主要在電場區的上方,且可佈植層104在溝槽的底部,但任何在側壁的佈植皆進行速度緩慢,且層102在佈植開始後,會朝本身的方向成長,減少進入溝槽的機會。第1C圖繪示在退火後的佈植層102和104(分別為層106和108)。在傳統的佈植技術中,層106特徵為具有經常性膨脹,且層108繪示了佈植材料集中在角落的傾向。在一些製程中,基板可旋轉以改變入射的角度,如第1D圖所示,如此可增加前驅物材料穿透溝槽的機會。此會在部份的側壁112增加佈植110。然而,此方法所帶來的好處很少,特別是對於具有非常高深寬比的結構,因
為驅使離子移動的電場線與表面正交,所以旋轉的平台不會產生同形佈植或摻雜。
所以,需要一種可對具有高深寬比結構之基板進行同形摻雜的方法。
本發明具體實施方式提供了一種處理基板的方法,包含:將該基板放置於處理腔室中;提供第一前驅物材料至該處理腔室中;使該第一前驅物材料反應,而在該基板上形成第一前驅物層;提供第二前驅物材料至該處理腔室中;使該第二前驅物材料反應而在該基板上形成摻質原子層;重覆此循環直到該摻質原子層達到目標厚度;及藉由加熱該基板,將該摻質原子層擴散進入該基板。
本發明之具體實施方式更提供了一種處理具有多個溝槽之基板的方法,包含:將該基板放置在處理腔室內;提供製程氣體混合物至該處理腔室中,其中該製程氣體混合物包含摻質前驅物;在該處理腔室中將該摻質前驅物游離成電漿,且該電漿包含有多數摻質離子;產生電場,該電場可使該些摻質離子穿透該基板上該些溝槽的效果極大化;及將該些摻質離子同形沉積在該基板上。
本發明之具體實施方式更提供了一種在半導體基板之表面上形成摻雜區的方法,包含:將該基板放置在處理
腔室內;提供催化性前驅物至該處理腔室內;將該催化性前驅物游離成等向性電漿;使該催化性前驅物反應而在該基板上形成催化性前驅物層;提供淨化氣體(purge gas)至該處理腔室中;提供摻質前驅物至該處理腔室中;將該摻質前驅物游離成等向性電漿;使該摻質前驅物反應而在該基板上形成摻質層;重覆此前驅物循環直到該摻質層達到目標厚度;及經由加熱該基板而使該摻質層擴散進入該基板中。
本發明之具體實施方式係有關於一種在基板進行同形摻雜的方法。此方法大致提供在基板上同形沉積摻質源,並接著施以電磁能量處理而使該摻質擴散進入基板中,並使摻質活化。可使用任何可在具有高深寬比特徵(例如大於3:1)的基板上同形沉積摻質源薄膜的沉積方法,例如,使用原子層沉積法(atomic layer deposition;ALD)、弱電漿輔助化學氣相沉積法(chemical vapor deposition enhanced by weak plasma;WPCVD)、電漿輔助原子層沉積法(plasma-assisted atomic layer deposition;PAALD),將摻質沉積在基板上,並接著進行退火處理。半導體元件的製造方法中,在具有特別高深寬比的洞(holes)或溝槽(trenches)之基板電場區(field region)中,形成同形摻雜區的方面持續面臨挑戰。用於
金屬和介電層沉積處理中的ALD,是一種可成功地在高深寬比特徵元件上形成同形層的方法。本發明之具體實施方式提供一種採用ALD技術,於有或無電漿輔助的情況下,同形沉積摻質原子在基板上的製程。
本發明之具體實施方式,在摻雜製程中使用ALD製程來沉積摻質之同形層。在本發明之一組具體實施例中,同形摻質層被沉積在具有非常高深寬比之多個洞或溝槽的基板上。之後,利用退火製程使摻質進入基板。退火製程是設計來使摻質擴散進入基板中,並使摻質「活化」,或促使摻質佔據晶體結構中的晶格節點。沉積方法可為ALD、WPCVD或PAALD處理方法。退火製程可為快速熱處理製程,在此製程中基板快速加熱至目標溫度,並保持在此溫度一段預定的時間,之後並迅速冷卻。退火製程也可為瞬間(spike)退火製程(基板經過瞬間高溫處理)、雷射退火製程、脈衝電磁波能量退火製程或爐管退火製程。
ALD處理典型的特徵在於自我局限(self-limiting)的表面催化化學「半反應」(half-reactions),其中第一前驅物與基板反應並沉積於基板上,且之後,第二前驅物可與所沉積之第一前驅物反應,以在基板上沉積出欲求組分的原子層。該等技術利用依序送入之前驅物脈衝(其中含
有欲求元素)的兩級、三級、四級或更高級數之循環,來沉積金屬層、金屬氧化物層、金屬氮化物層和具有更複雜化學成分的金屬衍生物層。
一般而言,會將第一前驅物以脈衝方式通入至反應腔室中,並沉積在位於反應腔室中的基板表面。此種第一前驅物一般為催化性物質,用以促進在基板上形成同形單層(conformal monolayer)。第一前驅物與基板表面上的多個反應位置(reaction sites)反應,直到所有的反應位置都被消耗完畢,反應才停止,一般會在表面上留下一層催化性物質的單層(monolayer)。多餘的第一前驅物會以噴入不會發生反應的淨化氣體方式,將多餘的第一前驅物自反應腔室中移除。之後,第二前驅物被以脈衝方式通入至反應腔室中。第二前驅物可為其它種催化性物質,或可為已沉積在表面上之物質的前驅物,例如摻質前驅物(dopant precursor)。第二前驅物與吸附的催化性物質反應,以產生第二前驅物的單層(monolayer)。此單層可為催化性物質或是目標沉積物,例如金屬物質或摻質物質。也可利用其它前驅物,以各種自我局限(self-limiting)的沉積方式來發展形成單層沉積。用重覆的循環迴圈沉積一層又一層的單層,直到形成理想厚度的平滑同形層為止。
在金屬氧化物的沉積處理中,第一前驅物一般為含氧化合物,係選擇用來使表面停止產生羥基。此羥基可催化與含金屬化合物間的反應,以便在表面上沉積出金屬
氧化物的同形單層。第二前驅物一般為含金屬的化合物,特徵為具有相對大型的配體,例如烷胺基,可以相對溫和的反應脫離。當金屬與基板上局部位置處的路易士鹼(例如,吸附的羥基)合成時,可使某些配體以揮發性化合物形式脫離,而使第二前驅物得以沉積於基板上。
當所有的反應位置被消耗完之後,反應即停止,且任何多餘的金屬前驅物會從反應室中移除。ALD被稱為「自我局限」的原因在於,在消耗了所有可進行表面催化反應的反應位置而產生單層沉積後,即不會再進行其它反應。此技術可於具有非常高深寬比的結構上沉積同形層。
之後,以脈衝方式通入氧氣前驅物,與吸附之金屬前驅物反應並使遺留的配體脫離,在基板的表面上產生金屬氧化物單層,並在表面上留下催化性羥基。同樣的,當可進行反應的位置被消耗完之後,反應即停止。此種金屬前驅物/氧氣前驅物的循環可重覆進行,沉積一層又一層的單層,直到形成理想厚度的平滑同形層為止。
同時,以ALD技術沉積金屬的方法也為已知。催化性物質一般為還原劑,可使表面上停止產生氫原子。先以還原劑對表面進行前處理。之後,金屬前驅物即可被吸附在基板上,接著以脈衝方式將還原劑通入反應器中。還原劑可使基板上形成金屬單層。
在本發明之一組具體實施例中,以ALD方式對基板進行同形(conformal)摻雜,接著進行退火處理。第2圖係依據本發明之具體實施例所繪示,利用ALD方式進行同
形摻雜的製程200。將同形摻質源層沉積在基板表面至理想的厚度,並使同形摻質源層驅使進入基板且活化該基板,必要時可經由退火處理來活化。摻質源層可為磷、砷、氟、硼、金屬或矽酸鹽層,可依據實施例的不同而使用適合的摻質。在一些具體實施例中,使用帽蓋層有助於進行退火製程,例如快速或瞬間(spike)熱製程,雷射或脈衝式電磁能量處理,或爐管退火處理。
在本發明之具體實施例中,硼、磷或砷等源層可經由ALD方式沉積。在步驟202中,提供欲進行摻雜的基板至處理腔室中,並放置在基板支撐件上。基板可由真空或電磁方式固定位置。基板支撐件被設計成可經由基板支撐件的表面,將化合物運送至基板的背面,以進行熱控制或控制背側面和邊緣的沉積。另外,基板支撐件本身也可以電阻式加熱或冷卻,或經由在支撐件之通道內流動的熱控制介質,進行基板背面的直接熱控制。基板可具有非常高深寬比(例如大於約10:1)的洞或特徵結構。處理腔室被配置成可進行一或多種沉積、清潔、熱處理或電磁能量製程。在步驟204中,基板的表面可選擇性地進行前處理,使基板達到可進行製程的狀況。例如,表面可使用液體組成物或電漿前處理清潔製程進行清潔。在第一次ALD循環開始之前,也可進行基板處理,以在基板表面上沉積出反應位置(reactive sites)。
在步驟206中,第一前驅物(可為催化性前驅物)被通入處理腔室(其中有欲進行摻雜之基板)。若第一前驅物
為氧化劑,則會反應形成末端為羥基之層,而使與基板上摻質鍵結的殘留配體被釋出而脫離。若第一前驅物為氮化劑,也可以相同的方式使末端胺基脫離。若摻質源為矽酸鹽層,例如硼矽酸鹽玻璃(borosilicate glass,BSG)、磷矽酸鹽玻璃(phosphosilicate glad,PSG)或硼磷矽酸鹽玻璃(borophosphosilicate glass,BPSG),則可使用含矽化合物作為第一前驅物。可用於此步驟的前驅物包含,但不限於,O2、O3、N2O、H2O、醇類(即ROH,其中R為脂肪族、環形或芳香族有機官能基)、過氧化物(有機和無機)、羧酸或氧之自由基化合物(即,O、O2、O3和OH自由基),可由加熱、熱電阻線(hot wire),和/或電漿方式產生。合適的含氮前驅物包含,但不限於,NH3、N2、聯胺(即,N2H4或MeN2H3)、胺(即,RR’R”N,其中R、R’、R”可為氫或相同或不同的有機官能基)、苯胺(即,C6H5NH2)、有機和無機疊氮(即,MeN3、Me3SiN3、NaN3或Cp2CoN3)和氮之自由基化合物(即,N3、N2、N、NH或NH2自由基),可由加熱、熱電阻線(hot wire),和/或電漿方式產生。合適的矽前驅物包含,但不限於,矽烷、官能基化之矽烷(即,烷基、烷氧基或烷胺基矽烷)、矽醇和官能基化的矽醇。
在步驟208中,將第二前驅物(可為摻質的前驅物)通入至處理腔室中(其中包括有欲進行摻雜的基板)。第二前驅物可為含硼化合物、含磷化合物、含砷化合物、含金屬之化合物或含氟化合物。一般來說,對此方面有用
的化合物為氫化物,例如硼烷、膦或胂,或具有機基團(例如烷基、環烷基或芳香基)的硼烷、硼化物、硼酸鹽、膦、磷化物、磷酸鹽、胂、砷化物或砷酸鹽。另外,也可以使用特徵為雜元素取代基之部份,例如胺基、烷胺基或芳香胺基的摻質前驅物。一般來說,可基於化合物在標準CVD製程中的可利用性,和在合理製程情況下吸附於基板表面上的能力,來選擇適用於ALD製程之化合物。可用以沉積磷摻質源層的典型前驅物的兩個實例為三甲基磷化物(trimethylphosphide)和三甲基磷酸鹽(trimethylphosphate)。
可以一或多個脈衝方式將含硼、磷或砷的化合物通入至反應腔室中,並吸附在基板上。例如,有機硼化物可吸附於末端為羥基的基板表面,並使某些有機成份脫離。在前驅物將所有反應位置實質消耗完畢後,過多的前驅物會以淨化(purge)或直接抽出腔室方式去除,以準備進行下一階段的循環。
第二前驅物會與吸附在基板表面的第一前驅物反應,直到反應位置被實質消耗完畢。之後,第二前驅物可以淨化方式從反應腔體中去除。若想使用單純的氧化物或氮化物層作為摻質源,在第二前驅物沉積之後,在基板表面會覆蓋一層完全為摻質源材料的同形單層。若需要更厚的化學沉積層,可提供連續的前驅物以逐步完成沉積的ALD製程。
如步驟210中所繪示,可重覆進行前驅物循環,直到
摻質源層達到理想的厚度為止。在步驟212中,當達到理想的厚度之後,即退火處理基板以將摻質擴散至基板中,同時活化摻質並修補晶格的損傷。步驟212可在一或多個處理循環中執行,例如快速加熱基板至目標溫度,將此溫度保持一段設定時間,並迅速將基板降至周圍溫度,或使基板的溫度瞬間升高。在本發明之其它的具體實施例中,此種熱處理的循環可為相同或不同。
上述多種ALD製程的具體實施方式是有用的。在一些具體實施例中,在每一個前驅物循環之間,經由關閉所有入口和抽真空,將壓力降低或淨空腔體對製程會有幫助。在一些具體實施例中,前驅物的輸入方式中,可以在每個前驅物沉積的循環之間,通入非反應性氣體進行驅氣。在其它的具體實施例中,淨化氣體可經由一或多個前驅物輸入途徑,連續性地進入處理腔室中。處理腔室在停止前驅物氣體流後,隨後通入淨化氣體,以除去過多的前驅物。在其它的具體實施例中,該等技術特徵可結合使用。前述之具體實施例都可用以在基板上沉積同形的摻質層。
可利用電漿輔助型沉積製程來執行同形摻雜,如第3圖所繪示。製程方法300開始於步驟302:將具有高深寬比特徵的基板放置在處理腔室內的基板支撐件上。基板可由真空或電磁方式固定位置,且基板支撐件可如之
前所述方式設置,使可進行基板的熱控制。如前述,處理腔室被設計成可進行一或多種的沉積、清理、熱處理或是電磁能量製程。
在步驟304中,在處理腔室中通入摻質前驅物材料。當摻質前驅物被游離成電漿且活化後可選擇吸附在基板的表面。對本發明有用的摻質前驅物包含,但不限於,硼化合物(即,硼烷、硼酸鹽或硼化物)、磷化合物(即,膦、磷酸鹽或磷化物)、砷化合物(即,胂、砷酸鹽或砷化物)、矽化合物(即,矽烷、矽氧烷、矽醇)、氮化合物(N2、NH3、N2O)以及氫氣和氧氣。可能對形成同形摻雜之具體實施例(例如製程300)有用的化合物實例為硼烷、二硼烷、膦、胂、矽烷、氮氣、氫氣和氧氣。
在步驟306中,摻質前驅物被游離成電漿。此電漿可為電容耦合式電漿,但較佳為電感耦合式電漿。可經由創造出電場,並使反應混合物穿過電場中而產生電感耦合式電漿。上述電場通常是穿過線圈的振盪電流所產生,線圈置於含有材料(例如,將被游離的摻質前驅物)的通道周圍。相對低的功率可產生較佳的振盪電場,例如低於約1000瓦,最佳為低於500瓦。此種低功率電漿(或弱電漿),增加了前驅物與基板反應或吸附在基板上的趨勢,同時可將不希望在處理裝置中產生的沉積量減至最小。振盪電場的頻率一般為約13.56MHz,即無線電頻率(radio frequency;RF)。此類型的電感耦合式電漿可在處理腔室、鄰近處理腔室的迴圈(loop)或遠端電漿產
生裝置中產生。
如在步驟308中所示,可對透過施加RF功率至與部份腔室耦接的電感器所產生之電感耦合式電漿上再外加電偏壓。電偏壓可經由以高通或低通濾波器(high-or low-pass filter)施加RF功率(或DC功率),至一或多個接近反應空間的組件(例如,氣體分配器(gas distributor)、基板支撐件或腔壁)而產生。電偏壓較佳的方向為離子向基板推進的方向,且較佳為使用弱電偏壓(即,低於500瓦)。此種狀態下,可使充電粒子深深地穿透進溝槽中,而非轉向撞擊側壁,使充電粒子可沉積在基板表面,而非僅佈植進入表面。雖然,較佳的情況為使用等向性反應混合物,但弱電偏壓的應用可促進離子穿透溝槽,而非在側壁上沉積。用此種方式可同時達成同形佈植和摻雜的目的。
除了電感耦合方式外,也可以電容耦合方式產生電漿,其中可在電容器的極板之間產生電場。與上述在處理腔室產生電偏壓方法相似,可將電壓施加在反應腔室之一或更多組件上,以產生電場。一般為使用RF功率,但也可使用DC功率。在此具體實施方式中,使用弱電漿較佳。
接著在步驟310中,將摻質源材料沉積在基板表面。在步驟312中,對基板進行退火,以活化摻質並將摻質擴散進入基板的晶狀結構中。
一些同形摻雜的具體實施例,可受益於使用電漿輔助型ALD法(plasma-assisted ALD;PAALD)。在PAALD製程中,前驅物與基板或/和其它吸附在基板上的前驅物間的反應,可經由游離前驅物物質而被促進或增強。與摻質沉積層的反應可因電漿的產生而更輕易地進行。電漿可為電感式或電容式耦合電漿,可選擇施加或不施加電偏壓。
第4圖為依據本發明之具體實施例所繪示之PAALD製程方法400流程圖。在步驟402中,具有高深寬比特徵的基板,如上述般,放置在處理腔室中的基板支撐件上。在步驟404中,可選擇性地對部份基板表面進行前處理(例如,濕式清潔法、電漿清潔法或施加官能基端基(即,羥基、氨基或氫原子端基)),以清理基板表面,或使基板表面達到可進行製程的狀況。在步驟406中,將第一前驅物(可為前述之催化性前驅物)通入至處理腔室中。腔室可在通入第一前驅物前進行淨化或排空(如前所述)。
在步驟408中,第一前驅物(可為催化性前驅物)被游離成電漿以幫助沉積。電漿可由電容式耦合方式產生,較佳為電感耦合式,並可在處理腔室、鄰近處理腔室或在處理腔室遠端的裝置中產生。產生電漿的RF功率之頻率為13.56MHz。如上所述,RF功率(較佳的功率級為小於1000瓦,更佳為小於200瓦)被施加在具有可被游離
的材料(例如第一前驅物)的通道中之電感器上。弱電漿有助於將前驅物沉積於基板表面。電漿可由電偏壓產生,但較佳為非電偏壓或電中性產生的電漿。非電偏壓所產生之電漿在處理腔室中常為等向性,可進行同形摻雜。弱電偏壓(例如以低於500瓦的功率所產生),也可實質在高深寬比的結構進行同形沉積。
如果需要的話,可將RF功率施加在一或多個前驅物上以增進效果。例如,如果需要的話,可以RF功率活化摻質前驅物,且在應用於氧或氮源,或其它催化性前驅物時,RF功率為不連續的,催化性前驅物可被RF功率活化或游離成電漿,於此可形成氧或氮電漿。一些具體實施例的特徵為使用超過兩種前驅物,將RF功率施加在許多不同的組合的各種前驅物上,可能有助於製程進行。
如果需要的話,也可在驅氣步驟410和416中使用RF功率。在驅氣步驟使用RF功率,可有助於減少前驅物吸附在反應腔室腔壁或管路上的機會。將淨化氣體游離成弱電漿,可有效移除此種在側壁或腔室中的沉積物。驅氣步驟也可在不連續的RF功率後進行。
與任何ALD製程相同,此處的沉積是以循環方式進行。前驅物被連續通入處理腔室中,可使用電漿(或在某些特殊的例子中也可不用電漿)形成需要的摻質層或摻質源層厚度。如步驟418所繪示,如果沒有達到目標厚度,沉積的循環可重覆進行。如果有需要,可使用不同程度的電漿,以進一步調整沉積製程。例如,交替的循
環使用不同的特徵電漿。
在步驟418中,當沉積於基板上的摻質源層達到目標厚度後,基板可進行退火以完成製程400。在步驟420中,基板進行退火,以將摻質源層中的摻質擴散進入至少部份的基板表面,並可用以活化摻質和修補晶格的損傷。退火製程可以一或多個,相同或不同的熱處理循環方式進行,例如快速熱處理、瞬間退火處理、雷射或脈衝雷射退火、閃光燈或脈衝式閃光燈退火或是爐管退火。
第5A-5C圖繪示在不同階段的基板,以回應之前所述之處理步驟。第5A圖繪示之基板500,具有高深寬比特徵。最好是可在基板500的上表面500A、側壁500B和溝槽500C上進行同形摻雜。第5B圖繪示出處於當摻質源材料被同形沉積期間之中間階段時的基板500。所繪示之前驅物材料502等向分佈在整個處理腔室中,使得在接近基板上表面500A、側壁500B和溝槽500處具有實質相同的前驅物濃度。在基板500上成長出一層摻質源材料的同形層504。第5C圖繪示了進行熱處理後的影響。同形層504被擴散進入基板500中並且活化,而形成同形摻雜層506。
沉積在基板表面的摻質源材料必須經過處理,以促使摻質源材料擴散進入基板,並使摻質活化。同形摻雜的具體實施方式同時包括活化步驟。可使用任何摻質擴散
製程以完成活化,例如快速熱處理或退火、瞬間退火、雷射退火、閃光、脈衝或爐管退火,或其它類似方式。在本發明之具體實施例中,使用帽蓋層有助於擴散和活化製程。帽蓋層可沉積在全部基板上(或部份基板上),以達成理想的熱處理結果。
具有摻質源材料沉積的基板,可在沉積摻質源材料的同一腔室內,或在一或多個不同的腔室中,進行熱或電磁退火處理。例如,摻質源材料可在用以進行PAALD製程的腔室中進行沉積,且之後傳送到熱處理腔室中進行退火。熱處理腔室被設計成對全部基板進行加熱與冷卻,例如使用加熱燈,或對部份基板進行加熱與冷卻,例如使用雷射、閃光燈,或背面冷卻的裝置。可控溫的基板支撐件有助於退火製程的進行。
在摻質源層中的摻質原子,經由熱處理使能量提高,並移動到基板內。在本發明之具體實施例中,在退火前使用一層帽蓋層,有助於防止自由移動的摻質在熱處理時脫離。使用帽蓋層也可平衡在基板的表面,特徵結構上之頂部和側壁的熱負載量。部份的基板一般會加熱至一溫度,此溫度的選擇目的是用以促進摻質移動進基板,且使基板晶格結構排列整齊。目標溫度可以形成在約700℃和約1410℃之間,且可選擇性地融解部份基板。選擇性地融解可用以促使固定位置的摻質和基板原子進行重新排列,有助於活化和擴散過程。在加熱循環中,基板的周圍溫度控制在介於約100℃和約700℃之
間,有助於快速加熱。較佳的情況下,加熱和冷卻的循環為快速進行,有助於活化和擴散的控制。例如,在加熱循環中,當基板溫度上升太慢時,可能導致摻質過份擴散進入基板,或使之前活化的摻質脫離。理想的溫度上升速率為超過400℃/s。冷卻循環一般會依循加熱循環,使移動或活化的摻質或基板原子在適當位置固化或冷卻。
在退火製程後,可能會有少量的摻質源層被遺留在基板的表面。一般來說,退火製程會使基板表面的摻質產生濃度梯度,在接近基板的表面處之濃度最高。在本發明之具體實施例中,可在退火後,將在基板表面的摻質源層和在基板表面下方的高濃度摻質層移除。可使用清理步驟,例如蝕刻、電漿清理或電漿蝕刻製程,來移除不想要的物質。
第6A圖為依據本發明之實施例所繪示之設備剖面簡圖。所繪示之設備被設計來進行電漿輔助製程,例如將摻質以電漿佈植於基板中。電漿反應器600包含具有腔底624、腔頂626和腔壁622(可用以關閉處理區604)的腔體602。由腔體602的腔底624所支撐的基板支撐組件628,在製程進行期間是用來放置基板606的。基板支撐組件628的對面為氣體分佈器630(耦接至腔體602之腔頂626)。抽氣口632置於腔體602中且耦接至真空
幫浦634。真空幫浦634經由節流閥636耦接至抽氣口632。氣體源652被耦接至氣體分佈器630,以提供前驅化合物氣體至基板606上進行製程。在本發明之具體實施例中,氣體分配器630可為蓮蓬頭。
在第6A圖中所示之反應器600更包含電漿源690,在第6B圖透視圖有更清楚的表示。電漿源690包含一對分開的外接迴流導管640和640’,可為彎管,安裝在腔體602的腔頂626外部,彼此為橫向配置(或為正交(orthogonal),如第6B圖所示之示例性實施例)。第一外接導管640具有第一端640a,穿過於腔頂626的開口698,耦接至腔體602處理區604之第一側。第二端640b具有開口696,耦接至處理區604的第二側。第二外接迴流導管640’具有第一端640a,(具有開口694),耦接至處理區604的第三側,和第二端640b’(具有開口692),耦接至處理區604的第四側。在本發明之具體實施例中,第一和第二外接迴流導管640和640’被配置成正交方向,具有640a、640a’、640b、640b’等端。每一外接迴流導管640、640’被放置在腔體602的腔頂626的周邊周圍,彼此間具有約90°的間隔。此種外接迴流導管640、640’的正交設計,可使處理區604中的電漿源分佈均勻。據推測,如果需要使用其它的分佈方式,以提供均勻的電漿分配進入處理區604,也可以將第一和第二外接迴流導管640、640’重新進行配置。
磁力可滲透的環狀核心(magnetically permeable
torroidal cores)642、642’,分別圍繞在對應部份的外接迴流導管640、640’上。導電線圈644、644’,經由各別的阻抗匹配電路或元件648、648’,被耦接至各別的RF電漿源功率產生器646、646’。每一外接迴流導管640、640’皆為中空導管,由絕緣環650、650’各別阻斷,絕緣環650、650’將介於各別外接迴流導管640、640’之兩端640a、640b(以及640a’和640b’)之間的連續電路阻斷。基板表面的離子能量由RF電漿電偏壓功率產生器654(第6A圖)(經由阻抗匹配電路或元件656,耦接至基板支撐件組件628)控制。
請再參考第6A圖,由製程氣體源652所供應之製程氣體(包含氣狀化合物),經由頂端的氣體分配器630而通入處理區604。RF電漿功率源646,經由導電線圈644和環形核心642,與由導管640所供應之氣體耦合,以在第一封閉環形路徑(包含外接迴流導管640和處理區604)中,產生環繞的電漿電流。同樣的,RF功率源646’(第6B圖),可經由導電線圈644’和環形核心642’,與在第二導管640’中的氣體耦合,以在第二封閉環形路徑(在第一環形路徑的橫向(例如,正交))產生環繞的電漿電流。第二環形路徑包含第二外接迴流導管640’和處理區604。在每一路徑的電漿電流,以各別的RF功率源產生器646、646’所提供之頻率進行振盪(例如,反方向移動),頻率可為相同或具有微小差距。
在本發明之一具體實施例中,製程氣體源652可提供
不同的製程氣程,用以提供摻質至基板606。每一電漿源功率產生器646、646’的功率,可用以游離製程氣體(由製程氣體源652所供應),且在基板606的表面產生理想的離子流。RF電漿電偏壓功率產生器654的功率被控制在一定程度,使由製程氣體所游離的離子能量可朝基板表面方向加速,並使在基板606上表面之下方理想的深度內的佈植具有理想的離子濃度,或沉積在基板606的表面。例如,將相對低的RF功率(例如低於約50電子伏特)施加於電偏壓產生器654上,即可得到相對低的電漿離子能量。具有低離子能量的游離離子,可被佈植在淺深度(距離基板表面約0Å至約600Å),或僅沉積在基板606的表面。在本發明之具體實施例中,由高功率的RF(例如高於約50電子伏特)所產生,具有高離子能量的游離態離子,可被佈植進基板,距離基板的表面有實質超過100Å的深度。
如前面所討論的,對於同形摻雜的應用,較佳的情況為在腔室中產生最弱的電偏壓。強電偏壓雖然可將沉積物質的活性保持在充沛的狀態,但也會導致在電場區中產生較多的沉積,而在洞或溝槽中產生較少的沉積。相較之下,弱電場區可達成對溝槽較佳的穿透。若沒有電偏壓,電漿的組成即為等向性,在電場區和在溝槽即為同形沉積。在弱電偏壓的使用方面,RF電偏壓產生器654較佳的操作頻率為13.56MHz,且在電偏壓小於約1000瓦的程度時具有較佳的操作效果,在小於約500瓦時(例
如小約於100瓦)會更佳。
如圖所示,電偏壓功率產生器654經由匹配網路656耦接至基板支撐件628(氣體分配器630為接地)。電偏壓功率產生器654將單極(monopolar)RF驅動電偏壓,施加在由外接迴流導管640和640’所產生的電漿上。在其它的具體實施例中,電偏壓產生器654可耦接至氣體分配器630,或各別的電偏壓線路可分別同時耦接至氣體分配器630和基板支撐件628。
控制性的RF電漿功率源和RF電漿電偏壓功率的結合,可解離氣體混合物中的離子,使之在電漿反應器600中具有足夠的動量和理想的離子分佈。如果具有足夠的能量,被電偏壓影響的離子會驅向基板表面移動,可將理想的離子濃度、分佈和深度(距基板表面)的離子,佈植進入基板。低能量電漿電偏壓功率可使在基板表面的沉積產生較少的穿透,此種情況一般在同形摻雜的應用上是理想的。更進一步說,控制性的離子能量,和從製程氣體所提供之不同型態離子物質,皆有助於將離子佈植或沉積於基板606,以形成理想的元件結構,例如在基板606上的閘結構或源汲區。
電漿反應器600更包含腔室襯墊(chamber liner)(未繪示)。腔室襯墊一般用以保護腔壁,免於受處理過程中所產生的反應性組成侵害。此種襯墊可以陶瓷、矽或其它保護性材料製成,且被設計為可定期更換。在其它的具體實施例中,腔室可具有化學性襯墊,藉由在進行製程
之前,於腔室的內表面沉積矽或氧化物層所形成。一種在原位(in-situ)的此型態之腔室襯墊可提供相同的功能,且可以蝕刻或清理程序方式去除。
本發明之具體實施方式已提供如上,可在不偏離本發明之基本範圍內建議其它相關之具體實施例,本發明之範圍由下面的申請專利範圍所決定。
100‧‧‧基板
102‧‧‧層
104‧‧‧層
106‧‧‧層
108‧‧‧層
110‧‧‧增加佈植
112‧‧‧側壁
200‧‧‧製程方法
202‧‧‧步驟
204‧‧‧步驟
206‧‧‧步驟
208‧‧‧步驟
210‧‧‧步驟
212‧‧‧步驟
214‧‧‧步驟
300‧‧‧製程方法
302‧‧‧步驟
304‧‧‧步驟
306‧‧‧步驟
308‧‧‧步驟
310‧‧‧步驟
312‧‧‧步驟
314‧‧‧步驟
400‧‧‧製程方法
402‧‧‧步驟
404‧‧‧步驟
406‧‧‧步驟
408‧‧‧步驟
410‧‧‧步驟
412‧‧‧步驟
414‧‧‧步驟
416‧‧‧步驟
418‧‧‧步驟
420‧‧‧步驟
422‧‧‧步驟
500‧‧‧基板
500A‧‧‧上表面
500B‧‧‧側壁
500C‧‧‧溝槽
502‧‧‧前驅物材料
504‧‧‧同形層
506‧‧‧同形摻雜層
600‧‧‧反應器
602‧‧‧腔體
604‧‧‧處理區
606‧‧‧基板
622‧‧‧腔壁
624‧‧‧腔底
626‧‧‧腔頂
628‧‧‧基板支撐組件
630‧‧‧氣體分配器
632‧‧‧抽氣口
634‧‧‧真空幫浦
636‧‧‧節流閥
640‧‧‧外接迴流導管
640'‧‧‧外接迴流導管
640a‧‧‧第一端
640b‧‧‧第二端
642‧‧‧環狀核心
642'‧‧‧環狀核心
644‧‧‧導電線圈
644'‧‧‧導電線圈
646‧‧‧RF電漿源功率產生器
646'‧‧‧RF電漿源功率產生器
648‧‧‧阻抗匹配電路或元件
648'‧‧‧阻抗匹配電路或元件
650‧‧‧絕緣環
650'‧‧‧絕緣環
652‧‧‧氣體源
654‧‧‧RF電漿電偏壓功率產生器
656‧‧‧匹配網路/匹配電路或元件
690‧‧‧電漿源
692‧‧‧開口
694‧‧‧開口
696‧‧‧開口
698‧‧‧開口
為了使本發明之特徵可被詳細瞭解,故將本發明之具體實施方式繪製成附圖。然而,需要注意的是,附圖所繪示的僅為本發明之典型的實施方式,不應作為發明範圍的限制,本發明包含其它同樣效果的具體實施方式。
為了簡潔之故,附圖中使用了特定的參考用數字代號,以表示圖中特定的元件。在一具體實施例中的特徵元件可與其它的具體實施例相同而不需特別註記。
第1A-1D圖係依據先前技術所繪示之基板進行摻雜製桯處理的方式。
第2圖係依據本發明之一具體實施例所繪示之製程方法流程圖。
第3圖係依據本發明之另一具體實施例所繪示之製程方法流程圖。
第4圖係依據本發明之另一具體實施例所繪示之製程方法流程圖。
第5A-5C圖係依據第2-4圖所示之任一種製程方法所繪示之基板處理方式。
第6A圖係依據本發明之具體實施例所繪示之基板處理設備之側面剖面圖。
第6B圖係依據本發明之具體實施例所繪示之電漿源透視圖。
300‧‧‧製程方法
302~314‧‧‧步驟
Claims (11)
- 一種處理一基板的方法,該方法包含:(a)將該基板放置於一處理腔室中;(b)提供一第一前驅物材料至該處理腔室中;(c)使該第一前驅物材料反應而在該基板上形成一第一前驅物層;(d)提供一第二前驅物材料至該處理腔室中;(e)使該第二前驅物材料反應而在該基板上形成一摻質原子層;(f)重覆步驟(b)-(e)直到該摻質原子層達到一目標厚度為止;及(g)藉由加熱該基板,使該摻質原子層擴散進入該基板。
- 如請求項1所述之方法,其中該第一前驅物為一催化性前驅物。
- 如請求項2所述之方法,其中該第二前驅物為一摻質前驅物。
- 如請求項3所述之方法,其中該摻質前驅物選自下列物質所組成之族群:硼前驅物、磷前驅物、砷前驅物、金屬前驅物、氟前驅物及上述之組合。
- 如請求項3所述之方法,其中該摻質前驅物為一有機硼化合物。
- 如請求項3所述之方法,其中該摻質前驅物為一有機磷化合物。
- 如請求項3所述之方法,其中該摻質前驅物為一有機砷化合物。
- 如請求項3所述之方法,其中該催化性前驅物選自下列物質所組成之族群:O2、O3、N2O、H2O2、NO、N2O5、醇類、有機和無機過氧化物、羧酸、氧自由基化合物和上述各物質之組合。
- 一種在一半導體基板的一表面上形成一摻雜區的方法,該方法包含:(a)將一基板放置在一處理腔室內;(b)提供一催化性前驅物至該處理腔室內;(c)將該催化性前驅物游離成一催化性前驅物電漿;(d)使該催化性前驅物電漿反應而在該基板上形成一摻質前驅物層;(e)提供一淨化氣體至該處理腔室中;(f)提供一摻質前驅物至該處理腔室中; (g)使該摻質前驅物游離成一摻質前驅物電漿;(h)使該摻質前驅物電漿反應,而在該基板上形成一摻質層;(i)重覆步驟(b)-(h)直至該摻質層達到一目標厚度為止;及(j)經由加熱該基板而使該摻質層擴散進入該基板中。
- 如請求項9所述之方法,其中該摻質前驅物選自下列物質所組成之族群:硼化合物、磷化合物、砷化合物、金屬化合物、氟化合物及上述物質的組合。
- 如請求項10所述之方法,其中該催化性前驅物選自下列物質所組成之族群:O2、O3、N2O、H2O2、NO、N2O5、醇類、有機和無機過氧化物、羧酸、氧自由基化合物和上述各物質之組合。
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US20110159673A1 (en) | 2011-06-30 |
KR101497902B1 (ko) | 2015-03-11 |
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KR20100133377A (ko) | 2010-12-21 |
WO2009099756A1 (en) | 2009-08-13 |
US8709924B2 (en) | 2014-04-29 |
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