TWI494992B - Substrate processing device and processing method thereof - Google Patents
Substrate processing device and processing method thereof Download PDFInfo
- Publication number
- TWI494992B TWI494992B TW101149312A TW101149312A TWI494992B TW I494992 B TWI494992 B TW I494992B TW 101149312 A TW101149312 A TW 101149312A TW 101149312 A TW101149312 A TW 101149312A TW I494992 B TWI494992 B TW I494992B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- etching
- thickness
- semiconductor wafer
- etching liquid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 64
- 238000003672 processing method Methods 0.000 title claims description 7
- 238000005530 etching Methods 0.000 claims description 130
- 239000007788 liquid Substances 0.000 claims description 79
- 230000007246 mechanism Effects 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 115
- 238000005498 polishing Methods 0.000 description 40
- 239000000126 substance Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 8
- 239000002699 waste material Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000004744 fabric Substances 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011285877 | 2011-12-27 | ||
| JP2012263347A JP6091193B2 (ja) | 2011-12-27 | 2012-11-30 | 基板の処理装置及び処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201334055A TW201334055A (zh) | 2013-08-16 |
| TWI494992B true TWI494992B (zh) | 2015-08-01 |
Family
ID=49049249
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104113076A TWI601202B (zh) | 2011-12-27 | 2012-12-22 | Substrate processing apparatus and processing method |
| TW101149312A TWI494992B (zh) | 2011-12-27 | 2012-12-22 | Substrate processing device and processing method thereof |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104113076A TWI601202B (zh) | 2011-12-27 | 2012-12-22 | Substrate processing apparatus and processing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP6091193B2 (ja) |
| KR (1) | KR101432009B1 (ja) |
| CN (1) | CN105070673A (ja) |
| TW (2) | TWI601202B (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6289961B2 (ja) * | 2014-03-27 | 2018-03-07 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
| KR20160045299A (ko) * | 2014-10-17 | 2016-04-27 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법 |
| KR101680214B1 (ko) * | 2015-01-22 | 2016-11-28 | 주식회사 엘지실트론 | 웨이퍼 이송 장치 |
| DE102017212887A1 (de) | 2017-07-26 | 2019-01-31 | Gebr. Schmid Gmbh | Verfahren, Vorrichtung und Anlage zur Leiterplattenherstellung |
| JP7130524B2 (ja) * | 2018-10-26 | 2022-09-05 | 東京エレクトロン株式会社 | 基板処理装置の制御装置および基板処理装置の制御方法 |
| JP7273660B2 (ja) | 2019-08-30 | 2023-05-15 | キオクシア株式会社 | 半導体製造装置、および半導体装置の製造方法 |
| JP2022135022A (ja) * | 2021-03-04 | 2022-09-15 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置、及び基板処理方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09223680A (ja) * | 1996-02-16 | 1997-08-26 | Disco Abrasive Syst Ltd | エッチング機能付き研磨装置 |
| JP2003203897A (ja) * | 2002-01-08 | 2003-07-18 | Toshiba Corp | ノズル、基板処理装置、基板処理方法、及び基板処理プログラム |
| TWI286817B (en) * | 2004-01-30 | 2007-09-11 | Lam Res Corp | Stress free etch processing in combination with a dynamic liquid meniscus |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63256342A (ja) * | 1987-04-10 | 1988-10-24 | Sumitomo Electric Ind Ltd | 半導体ウエ−ハの研削方法 |
| JPH03265586A (ja) * | 1990-03-15 | 1991-11-26 | Toshiba Corp | 窒化アルミニウム基板の製造方法 |
| JP3748527B2 (ja) * | 2001-09-26 | 2006-02-22 | 大日本スクリーン製造株式会社 | エッチング装置およびエッチング方法 |
| JP4192482B2 (ja) * | 2002-03-22 | 2008-12-10 | 株式会社Ｓｕｍｃｏ | シリコンウェーハの製造方法 |
| KR100452918B1 (ko) * | 2002-04-12 | 2004-10-14 | 한국디엔에스 주식회사 | 두께측정시스템이 구비된 회전식각장치 |
| JP2005262406A (ja) * | 2004-03-19 | 2005-09-29 | Toshiba Corp | 研磨装置および半導体装置の製造方法 |
| JPWO2005104638A1 (ja) * | 2004-04-23 | 2008-03-13 | 松下電工株式会社 | 配線基板およびその製造方法 |
| JP3638020B1 (ja) * | 2004-09-17 | 2005-04-13 | 孝昭 鈴木 | ウエハの薄厚化方法、及びウエハの薄厚化装置 |
| CN1632165A (zh) * | 2004-12-28 | 2005-06-29 | 北京科技大学 | 一种在硬质合金工具上制备金刚石涂层的方法 |
| JP2008166576A (ja) * | 2006-12-28 | 2008-07-17 | Rohm Co Ltd | 半導体装置の製造方法 |
| JP4937674B2 (ja) * | 2006-08-16 | 2012-05-23 | 株式会社ディスコ | ウエーハのエッチング方法 |
| JP2009224511A (ja) * | 2008-03-14 | 2009-10-01 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
| JP5422907B2 (ja) * | 2008-04-11 | 2014-02-19 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP5012632B2 (ja) * | 2008-04-15 | 2012-08-29 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP2010040543A (ja) * | 2008-07-31 | 2010-02-18 | Sumco Corp | 半導体ウェーハの加工装置 |
| JP2010171330A (ja) * | 2009-01-26 | 2010-08-05 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | エピタキシャルウェハの製造方法、欠陥除去方法およびエピタキシャルウェハ |
| JP2011086654A (ja) * | 2009-10-13 | 2011-04-28 | Seiko Epson Corp | 基板の加工方法及び基板 |
-
2012
- 2012-11-30 JP JP2012263347A patent/JP6091193B2/ja active Active
- 2012-12-22 TW TW104113076A patent/TWI601202B/zh active
- 2012-12-22 TW TW101149312A patent/TWI494992B/zh active
- 2012-12-26 CN CN201510451334.5A patent/CN105070673A/zh active Pending
-
2014
- 2014-02-14 KR KR1020140016981A patent/KR101432009B1/ko active IP Right Grant
-
2017
- 2017-02-07 JP JP2017020310A patent/JP6321234B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09223680A (ja) * | 1996-02-16 | 1997-08-26 | Disco Abrasive Syst Ltd | エッチング機能付き研磨装置 |
| JP2003203897A (ja) * | 2002-01-08 | 2003-07-18 | Toshiba Corp | ノズル、基板処理装置、基板処理方法、及び基板処理プログラム |
| TWI286817B (en) * | 2004-01-30 | 2007-09-11 | Lam Res Corp | Stress free etch processing in combination with a dynamic liquid meniscus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105070673A (zh) | 2015-11-18 |
| JP6321234B2 (ja) | 2018-05-09 |
| TW201334055A (zh) | 2013-08-16 |
| JP6091193B2 (ja) | 2017-03-08 |
| JP2013153141A (ja) | 2013-08-08 |
| TW201535506A (zh) | 2015-09-16 |
| KR20140024948A (ko) | 2014-03-03 |
| JP2017085174A (ja) | 2017-05-18 |
| KR101432009B1 (ko) | 2014-08-20 |
| TWI601202B (zh) | 2017-10-01 |
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