KR101432009B1 - 기판의 처리 장치 및 처리 방법 - Google Patents

기판의 처리 장치 및 처리 방법 Download PDF

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Publication number
KR101432009B1
KR101432009B1 KR1020140016981A KR20140016981A KR101432009B1 KR 101432009 B1 KR101432009 B1 KR 101432009B1 KR 1020140016981 A KR1020140016981 A KR 1020140016981A KR 20140016981 A KR20140016981 A KR 20140016981A KR 101432009 B1 KR101432009 B1 KR 101432009B1
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KR
South Korea
Prior art keywords
semiconductor wafer
etching
substrate
thickness
etching liquid
Prior art date
Application number
KR1020140016981A
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English (en)
Korean (ko)
Other versions
KR20140024948A (ko
Inventor
고노스케 하야시
에미 마츠이
다카시 오오타가키
요스케 히모리
Original Assignee
시바우라 메카트로닉스 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 시바우라 메카트로닉스 가부시끼가이샤 filed Critical 시바우라 메카트로닉스 가부시끼가이샤
Publication of KR20140024948A publication Critical patent/KR20140024948A/ko
Application granted granted Critical
Publication of KR101432009B1 publication Critical patent/KR101432009B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020140016981A 2011-12-27 2014-02-14 기판의 처리 장치 및 처리 방법 KR101432009B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011285877 2011-12-27
JPJP-P-2011-285877 2011-12-27
JPJP-P-2012-263347 2012-11-30
JP2012263347A JP6091193B2 (ja) 2011-12-27 2012-11-30 基板の処理装置及び処理方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020120153537A Division KR101380494B1 (ko) 2011-12-27 2012-12-26 기판의 처리 장치 및 처리 방법

Publications (2)

Publication Number Publication Date
KR20140024948A KR20140024948A (ko) 2014-03-03
KR101432009B1 true KR101432009B1 (ko) 2014-08-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140016981A KR101432009B1 (ko) 2011-12-27 2014-02-14 기판의 처리 장치 및 처리 방법

Country Status (4)

Country Link
JP (2) JP6091193B2 (ja)
KR (1) KR101432009B1 (ja)
CN (1) CN105070673A (ja)
TW (2) TWI494992B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289961B2 (ja) 2014-03-27 2018-03-07 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
KR20160045299A (ko) * 2014-10-17 2016-04-27 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법
KR101680214B1 (ko) * 2015-01-22 2016-11-28 주식회사 엘지실트론 웨이퍼 이송 장치
DE102017212887A1 (de) 2017-07-26 2019-01-31 Gebr. Schmid Gmbh Verfahren, Vorrichtung und Anlage zur Leiterplattenherstellung
JP7130524B2 (ja) * 2018-10-26 2022-09-05 東京エレクトロン株式会社 基板処理装置の制御装置および基板処理装置の制御方法
JP7273660B2 (ja) 2019-08-30 2023-05-15 キオクシア株式会社 半導体製造装置、および半導体装置の製造方法
JP2022135022A (ja) 2021-03-04 2022-09-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、及び基板処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09223680A (ja) * 1996-02-16 1997-08-26 Disco Abrasive Syst Ltd エッチング機能付き研磨装置
KR20060127115A (ko) * 2004-01-30 2006-12-11 램 리써치 코포레이션 동적 액체 메니스커스와 공동 동작하는 무응력 에칭프로세스

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63256342A (ja) * 1987-04-10 1988-10-24 Sumitomo Electric Ind Ltd 半導体ウエ−ハの研削方法
JPH03265586A (ja) * 1990-03-15 1991-11-26 Toshiba Corp 窒化アルミニウム基板の製造方法
JP3748527B2 (ja) * 2001-09-26 2006-02-22 大日本スクリーン製造株式会社 エッチング装置およびエッチング方法
JP2003203897A (ja) * 2002-01-08 2003-07-18 Toshiba Corp ノズル、基板処理装置、基板処理方法、及び基板処理プログラム
JP4192482B2 (ja) * 2002-03-22 2008-12-10 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
KR100452918B1 (ko) * 2002-04-12 2004-10-14 한국디엔에스 주식회사 두께측정시스템이 구비된 회전식각장치
JP2005262406A (ja) * 2004-03-19 2005-09-29 Toshiba Corp 研磨装置および半導体装置の製造方法
WO2005104638A1 (ja) * 2004-04-23 2005-11-03 Matsushita Electric Works, Ltd. 配線基板およびその製造方法
JP3638020B1 (ja) * 2004-09-17 2005-04-13 孝昭 鈴木 ウエハの薄厚化方法、及びウエハの薄厚化装置
CN1632165A (zh) * 2004-12-28 2005-06-29 北京科技大学 一种在硬质合金工具上制备金刚石涂层的方法
JP2008166576A (ja) * 2006-12-28 2008-07-17 Rohm Co Ltd 半導体装置の製造方法
JP4937674B2 (ja) * 2006-08-16 2012-05-23 株式会社ディスコ ウエーハのエッチング方法
JP2009224511A (ja) * 2008-03-14 2009-10-01 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP5422907B2 (ja) * 2008-04-11 2014-02-19 富士電機株式会社 半導体装置の製造方法
JP5012632B2 (ja) * 2008-04-15 2012-08-29 富士電機株式会社 半導体装置の製造方法
JP2010040543A (ja) * 2008-07-31 2010-02-18 Sumco Corp 半導体ウェーハの加工装置
JP2010171330A (ja) * 2009-01-26 2010-08-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェハの製造方法、欠陥除去方法およびエピタキシャルウェハ
JP2011086654A (ja) * 2009-10-13 2011-04-28 Seiko Epson Corp 基板の加工方法及び基板

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09223680A (ja) * 1996-02-16 1997-08-26 Disco Abrasive Syst Ltd エッチング機能付き研磨装置
KR20060127115A (ko) * 2004-01-30 2006-12-11 램 리써치 코포레이션 동적 액체 메니스커스와 공동 동작하는 무응력 에칭프로세스

Also Published As

Publication number Publication date
TWI601202B (zh) 2017-10-01
JP6321234B2 (ja) 2018-05-09
JP2017085174A (ja) 2017-05-18
TW201535506A (zh) 2015-09-16
JP6091193B2 (ja) 2017-03-08
JP2013153141A (ja) 2013-08-08
KR20140024948A (ko) 2014-03-03
TWI494992B (zh) 2015-08-01
TW201334055A (zh) 2013-08-16
CN105070673A (zh) 2015-11-18

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