JP7130524B2 - 基板処理装置の制御装置および基板処理装置の制御方法 - Google Patents
基板処理装置の制御装置および基板処理装置の制御方法 Download PDFInfo
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67248—Temperature monitoring
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM]
- G05B19/41875—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM] characterised by quality surveillance of production
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- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
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- G05—CONTROLLING; REGULATING
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- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/32—Operator till task planning
- G05B2219/32368—Quality control
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45031—Manufacturing semiconductor wafers
Description
最初に、図1を参照しながら、実施形態に係る基板処理システム1の概略構成について説明する。図1は、実施形態に係る基板処理システム1の概略構成を示す図である。なお、基板処理システム1は、基板処理装置の一例である。以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
次に、処理ユニット16の構成について、図2を参照しながら説明する。図2は、処理ユニット16の具体的な構成例を示す模式図である。図2に示すように、処理ユニット16は、チャンバ20と、基板処理部30と、液供給部40と、回収カップ50とを備える。
次に処理ユニット16に接続される基板処理システム1の配管構成について、図3を参照しながら説明する。図3は、実施形態に係る基板処理システム1の配管構成を示す模式図である。
次に、基板処理システム1を制御する制御装置4の詳細について、図4を参照しながら説明する。図4は、実施形態に係る制御装置4の概略構成を示すブロック図である。上述したように、制御装置4は、制御部18と記憶部19とを備える。
次に、ここまで説明した制御処理の具体例について、図5~図9を参照しながら説明する。図5は、実施形態に係る制御処理の具体例を説明するための図である。ここでは、複数の処理ユニット16a~16cにおいて、それぞれウェハWが処理液で処理される場合について説明する。
つづいて、実施形態の変形例に係る基板処理システム1の配管構成について、図10を参照しながら説明する。図10は、実施形態の変形例に係る基板処理システム1の配管構成を示す模式図である。
つづいて、実施形態に係る制御処理の手順について、図14を参照しながら説明する。図14は、実施形態に係る基板処理システム1の制御装置4が実行する制御処理の手順を示すフローチャートである。
1 基板処理システム(基板処理装置の一例)
16 処理ユニット
18 制御部
18a 読出部
18b 推定部
18c 比較部
18d 補正部
19 記憶部
19a レイアウト情報記憶部
19b 補正データベース
106a~106c、116a~116c 流量調整器
131a~131c バルブ
132a~132c 温度センサ
133a~133c 流量センサ
134a~134c ヒータ
148 濃度センサ
Claims (2)
- 基板を処理する基準の処理条件を読み出す読出部と、
前記基板が処理される際の実際の処理条件を推定する推定部と、
前記基準の処理条件と前記実際の処理条件とを比較する比較部と、
前記比較部での比較結果に基づいて前記基板の処理条件を補正する補正部と、
を備え、
前記推定部は、
基板処理装置の装置レイアウトおよび前記基板処理装置に設置されたセンサからの情報に基づいて前記実際の処理条件を推定し、
前記補正部は、
前記基準の処理条件に含まれる複数のパラメータのうち、前記実際の処理条件から処理液の処理時間がずれている場合に、前記処理液の温度または濃度を補正する
基板処理装置の制御装置。 - 基板を処理する基準の処理条件を読み出す読出工程と、
前記基板が処理される際の実際の処理条件を推定する推定工程と、
前記基準の処理条件と前記実際の処理条件とを比較する比較工程と、
前記比較工程での比較結果に基づいて前記基板の処理条件を補正する補正工程と、
を含み、
前記推定工程は、
基板処理装置の装置レイアウトおよび前記基板処理装置に設置されたセンサからの情報に基づいて前記実際の処理条件を推定し、
前記補正工程は、
前記基準の処理条件に含まれる複数のパラメータのうち、前記実際の処理条件から処理液の処理時間がずれている場合に、前記処理液の温度または濃度を補正する
基板処理装置の制御方法。
Priority Applications (5)
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JP2018201548A JP7130524B2 (ja) | 2018-10-26 | 2018-10-26 | 基板処理装置の制御装置および基板処理装置の制御方法 |
TW108136810A TWI820233B (zh) | 2018-10-26 | 2019-10-14 | 基板處理裝置之控制裝置及基板處理裝置之控制方法 |
KR1020190129413A KR20200047351A (ko) | 2018-10-26 | 2019-10-17 | 기판 처리 장치의 제어 장치 및 기판 처리 장치의 제어 방법 |
US16/658,428 US11282727B2 (en) | 2018-10-26 | 2019-10-21 | Control device of substrate processing apparatus and control method of substrate processing apparatus |
CN201911004885.1A CN111106035A (zh) | 2018-10-26 | 2019-10-22 | 基片处理装置的控制装置和基片处理装置的控制方法 |
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JP2020068344A JP2020068344A (ja) | 2020-04-30 |
JP7130524B2 true JP7130524B2 (ja) | 2022-09-05 |
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JP (1) | JP7130524B2 (ja) |
KR (1) | KR20200047351A (ja) |
CN (1) | CN111106035A (ja) |
TW (1) | TWI820233B (ja) |
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- 2019-10-14 TW TW108136810A patent/TWI820233B/zh active
- 2019-10-17 KR KR1020190129413A patent/KR20200047351A/ko not_active Application Discontinuation
- 2019-10-21 US US16/658,428 patent/US11282727B2/en active Active
- 2019-10-22 CN CN201911004885.1A patent/CN111106035A/zh active Pending
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JP2001205158A (ja) | 2000-01-28 | 2001-07-31 | Dainippon Screen Mfg Co Ltd | 基板浸漬処理装置 |
JP2004031671A (ja) | 2002-06-26 | 2004-01-29 | Dainippon Screen Mfg Co Ltd | 基板処理システムおよび基板処理方法 |
JP2006114590A (ja) | 2004-10-13 | 2006-04-27 | Toshiba Corp | 半導体基板処理装置及び半導体装置の製造方法 |
JP2017011260A (ja) | 2015-06-16 | 2017-01-12 | 東京エレクトロン株式会社 | 処理装置、処理方法および記憶媒体 |
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TW202029317A (zh) | 2020-08-01 |
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CN111106035A (zh) | 2020-05-05 |
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