TWI494992B - Substrate processing device and processing method thereof - Google Patents

Description

Substrate processing device and processing method Field of invention

This invention relates to a processing apparatus and a processing method for etching a substrate on a board surface of a substrate such as a semiconductor wafer using an etching solution.

Background of the invention

For example, in the semiconductor process, an etching step using an etching solution to remove an oxide film, a nitride film, or an aluminum film formed on the surface of the semiconductor wafer is known.

When the film formed on the surface of the semiconductor wafer is removed by the etching liquid, in order to form the film thickness to a predetermined thickness, it is known to perform etching processing only at a predetermined time or to detect the semiconductor wafer with a film thickness sensor. The thickness is performed on one side, whereby the semiconductor wafer is etched into a desired thickness.

Further, it is necessary to produce a bottomed cylindrical semiconductor wafer by forming a rib shape on the outer peripheral portion in the subsequent step. In order to form a rib shape on the outer peripheral portion, the center side of the semiconductor wafer is polished by a grinder or the like to remove the outer peripheral portion. Further, after the polishing process, wet etching is performed to remove stress.

Advanced technical literature Patent literature

Patent Document 1 Japanese Patent Laid-Open Publication No. 2002-319562

Summary of invention

However, there is a case where an organic substance which cannot be etched by a commonly used etching liquid adheres to the surface of the film formed on the semiconductor wafer. In this case, the film of the organic substance is shielded and etching is not performed.

Further, in the case where the semiconductor wafer is transferred to the etching step, the CMP (Chemical Mechanical Polishing) mirror processing is performed. The surface of the mirror-processed semiconductor wafer, that is, the mirror surface, is formed in a state in which the etching liquid is not easily applied. Therefore, there is also a case where etching of the etching liquid is not performed at this time.

Further, when the etching of the semiconductor wafer is not performed for the above reasons or the like, the semiconductor wafer cannot be etched into a desired thickness.

Further, when polishing the center side of the polishing, since the adhesive tape needs to be attached to the back surface of the semiconductor wafer, it is necessary to attach and tear the tape before and after the polishing process. Further, since the above-described stress removing step or washing step is required for the additional step, the steps are complicated, and there is a problem that productivity is lowered. Further, since the polishing process is excellent in processing efficiency, but cracks enter the semiconductor wafer, there is a problem that the processing speed cannot be made constant or more.

According to the present invention, there is provided a processing apparatus and a processing method for providing a substrate having a thickness of a desired thickness by etching an etchant even if a film of an organic substance is formed on a surface of a substrate or the surface of the surface is a mirror surface.

Moreover, the present invention provides a processing apparatus and a processing method for a substrate. The processing apparatus and the processing method of the substrate are used to manufacture a semiconductor wafer having a peripheral rib shape, and the processing step is reduced without using a polishing step, and the step is simplified. In this way, productivity can be improved.

The present invention relates to a processing apparatus for etching a substrate on a surface of a substrate with an etching solution, comprising: an etching liquid supply mechanism, a thickness detecting mechanism, a control mechanism, and a processing mechanism, wherein the etching liquid supply mechanism supplies the etching liquid to the substrate The thickness detecting means detects the thickness of the substrate etched by the etching liquid; and the control means performs the etching liquid when the thickness of the substrate detected by the thickness detecting means is abnormal The etching interrupter; the processing mechanism is configured to process the surface of the substrate into a rough surface when the etching by the etching liquid is interrupted.

The invention is directed to a method of etching a substrate on a surface of a substrate with an etching solution, comprising the steps of: (1) supplying an etching solution to a surface of the substrate; and (2) causing the foregoing etching When the change in the thickness of the substrate is abnormal, the etching by the etching liquid is interrupted; and (3) when the etching is interrupted, the surface of the substrate is processed into a rough surface, and then etching is started.

According to the invention, it is determined whether or not the thickness of the substrate is changed during etching, and whether or not the substrate has been etched is etched. When the etching is not performed, the etching is interrupted, and the surface of the substrate is processed into a rough surface, and then etching is started.

Therefore, the surface of the substrate can be removed by processing the surface of the substrate. In order to hinder the progress of the etching of the substrate, for example, a film of an organic substance formed on the surface of the substrate, or a rough surface which is easy to act from a state in which the etching liquid does not easily act, the substrate can be surely etched into a desired period. thickness.

1‧‧‧ cup body

2‧‧‧Rotating table

2a‧‧‧ Keep selling

3‧‧‧Site drive source

4‧‧‧Separator

4a‧‧‧ sloping wall

5‧‧‧Internal Space Department

6‧‧‧Outside Space Department

7‧‧‧Up and down drive source

8‧‧‧1st waste pipe

9‧‧‧2nd waste pipe

11‧‧‧Processing regeneration unit

13‧‧‧1st rotary drive source

14‧‧‧2nd rotary drive source

15‧‧‧3rd rotary drive source

16‧‧‧1st shaft

17‧‧‧2nd axis

18‧‧‧3rd axis

21‧‧‧1st arm

22‧‧‧2nd arm

23‧‧‧3rd arm

25‧‧‧1st nozzle body

26‧‧‧2nd nozzle body

27‧‧‧ grinding body

27A‧‧‧Laser Illumination Department

28‧‧‧ cylinder

29‧‧‧ thickness detection sensor

30‧‧‧Supply institutions

31‧‧‧Control device

32‧‧‧Setting Department

33‧‧‧Memory Department

34‧‧‧Comparative Department

35‧‧‧Decision Department

36‧‧‧Output Department

38‧‧‧1st liquid supply pipe

39‧‧‧1st on-off valve

41‧‧‧2nd liquid supply pipe

42‧‧‧2nd on-off valve

43‧‧‧ gas supply pipe

44‧‧‧3rd on-off valve

A‧‧‧Pressure gas

B., bn, bn+α‧‧‧ thickness of semiconductor wafer

E‧‧‧etching solution

L‧‧‧ cleaning solution

m‧‧‧Mirror

P‧‧‧ graphics

R‧‧‧

Tn‧‧‧ time

W‧‧‧Semiconductor Wafer

WL‧‧‧ Ribs

WQ‧‧‧ center side

Fig. 1 is a schematic view showing a rotation processing apparatus according to a first embodiment of the present invention.

Figure 2 is a plan view of the rotary processing apparatus shown in Figure 1.

Fig. 3 is a piping system diagram of an etching solution, a cleaning liquid, and a pressurizing system.

Fig. 4 is a structural view showing a control device for controlling the first to third on-off valves provided in the piping system diagram shown in Fig. 3.

Figure 5 is a graph showing the change in thickness of a semiconductor wafer during etching versus time.

Figure 6A is an enlarged view showing a portion of a semiconductor wafer whose etched surface is a mirror surface.

Figure 6B is an enlarged view showing a portion of a semiconductor wafer from which the etched surface is mirrored to a rough surface.

Fig. 7A is a longitudinal cross-sectional view schematically showing a semiconductor wafer in a process of the rotation processing apparatus according to the second embodiment of the present invention.

Fig. 7B is a longitudinal sectional view schematically showing the semiconductor wafer.

Fig. 7C is a schematic longitudinal sectional view showing the semiconductor wafer.

Fig. 8 is a longitudinal sectional view schematically showing a modification of the rotary processing apparatus.

Form for implementing the invention

Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.

1 and 2 show a rotation processing apparatus as a processing apparatus having a cup body 1. A rotary table 2 is provided inside the cup body 1. The turntable 2 can be rotationally driven by the drive source 3, and the semiconductor wafer W as a substrate can be detachably held thereon by a plurality of holding pins 2a in a horizontal state. In other words, the semiconductor wafer W is held by the turntable 2 in a state of being rotatable integrally with the turntable 2.

As shown in Fig. 1, a cylindrical separator 4 that partitions the inner portion into an inner space portion 5 and an outer space portion 6 is provided inside the cup body 1. The partition body 4 can vertically drive the source 7 in a vertical direction. drive.

When the separator 4 is at the rising position, as will be described later, the etching liquid E which is supplied to the upper surface of the semiconductor wafer W which rotates together with the rotating table 2 and which is scattered by centrifugal force to the periphery hits the inner peripheral surface of the separator 4 and drops. To the inner space portion 5 described above.

As shown in FIG. 1, when the separator 4 is at the lowered position, the upper end of the inclined wall 4a formed at the upper end portion of the separator 4 is positioned slightly below the upper surface of the semiconductor wafer W. As a result, as will be described later, the cleaning liquid L supplied to the upper surface of the rotating semiconductor wafer W and scattered by the centrifugal force to the periphery can be dropped onto the outer space portion 6.

A first waste liquid pipe 8 is connected to a portion corresponding to the inner space portion 5 at the bottom of the cup body 1, and a second waste liquid pipe 9 is connected to a portion corresponding to the outer space portion 6. The etching liquid E flowing to the first waste liquid pipe 8 is guided to the processing regeneration unit 11 for purification, and can be reused as will be described later. guide The cleaning liquid L to the second waste liquid pipe 9 is subjected to purification treatment and discarded.

As shown in FIGS. 1 and 2, a first rotation drive source 13, a second rotation drive source 14, and a third rotation drive source 15 are disposed outside the cup 1. The first shaft body 16, the second shaft body 17, and the third shaft body 18 that are rotationally driven by the respective drive sources 13, 14, and 15 are vertically provided to the respective drive sources 13, 14, and 15.

The base end of the first arm 21 is connected to the upper end of the first shaft body 16 to be horizontal, and the base end of the second arm 22 is connected to the upper end of the second shaft body 17 to be horizontal. The base end of the third arm 23 is coupled to the upper end of the third shaft body 18 to be horizontal.

The first nozzle body 25 for etching liquid and the second nozzle body 26 for pure water as a cleaning body are provided at the end portion of the first arm 21 . Further, when the first arm 21 is rotationally driven by the first rotational driving source 13 in a predetermined angular range, the first nozzle body 25 and the second nozzle body 26 are held above the semiconductor wafer W of the rotating table 2. In the radial direction, shake as shown by the arrow in Figure 2.

The disk-shaped polishing body 27, which is a processing mechanism for processing the upper surface of the semiconductor wafer W on the turntable 2, is formed in the front end of the second arm 22 in a state where the cylinder 28 can be driven in the vertical direction.

The polishing body 27 is provided with a cloth having a thicker and harder cloth than that used to mirror the surface of the semiconductor wafer W on the surface of the surface of the semiconductor wafer W. Further, when the second arm 22 is rotationally driven by the second rotation drive source 14 within a predetermined angle range, the polishing body 27 is held above the semiconductor wafer W of the turntable 2 as indicated by an arrow in FIG. Shake.

Therefore, when the polishing body 27 is shaken and the potential energy in the downward direction is given by the cylinder 28, the polishing body 27 is not used. The upper surface of the semiconductor wafer W is mirror-finished and processed into a rough surface which is thicker than the mirror surface.

Further, the polishing body 27 is not limited to the use of a cloth having a thick and hard cloth, and may be an abrasive having a large particle diameter attached to the fabric, and the main point is that the surface of the semiconductor wafer W can be processed into a rough surface. .

A thickness detecting sensor 29 for detecting a thickness of the semiconductor wafer W is provided at an end portion of the third arm 23 before the end. This thickness detecting mechanism is, for example, a laser displacement sensor. The thickness detecting sensor 29 detects the thickness of the semiconductor wafer W held by the rotating table 2 by the third arm 23 being scanned by the third rotating driving source 15 as indicated by an arrow in FIG. . That is, as will be described later, the thickness of the semiconductor wafer W which has been etched by the etching liquid E or the thickness of the semiconductor wafer W which has been processed into a rough surface by the polishing body 27 can be detected.

As shown in FIG. 4, the detection signal of the thickness detecting sensor 29 described above can be output to the control device 31. The control unit 31 is connected to the setting unit 32, and the setting unit 32 sets the etching of the semiconductor wafer W by the etching liquid in a normal state as shown in FIG. 5 in the memory unit 33 built in the control unit 31. A linear pattern P of time and thickness. This pattern P is a set value indicating the etching amount versus the etching time.

Further, the inclination angle of the pattern P differs depending on the properties such as the concentration or type of the etching liquid E.

When the etching of the semiconductor wafer W is started by the etching liquid E, the change in the thickness b of the semiconductor wafer W detected by the thickness detecting sensor 29 is output to the comparing portion 34. In this comparison section 34, whenever the etching passes The thickness b of the semiconductor wafer W detected by the thickness detecting sensor 29 at this time is compared with the pattern P of the memory unit 33 set in the memory unit 33.

Further, the above-described semi-conductance detected by the thickness detecting sensor 29 is used When the change in the thickness b of the bulk wafer W is more than a predetermined range from the pattern P, as shown in FIG. 5, for example, at time tn, the thickness of the semiconductor wafer W is bn in the pattern P, and When the measured value is bn + α, the determination unit 35 determines that the determination signal is output to the output unit 36.

As shown in FIG. 3 and FIG. 4, the output unit 36 can output and drive the above. The drive signal of the stage drive source 3 and the first to third rotary drive sources 13 to 15. Further, the output unit 36 outputs a drive signal that is provided in the first on-off valve 39 that supplies the etching liquid E to the first liquid supply pipe 38 of the first nozzle body 25, and is provided in the cleaning liquid L. The second on-off valve 42 supplied to the second supply pipe 41 of the second nozzle body 26 is provided in the third on-off valve 44 that supplies the pressurized gas A to the air supply pipe 43 of the cylinder 28.

The etching liquid E is supplied from the processing and regenerating unit 11 to the first liquid supply pipe 38, and the cleaning liquid L is supplied to the second liquid supply pipe 41 from a supply source of the cleaning liquid L (not shown). The supply air source (not shown) supplies the pressurized gas A to the above-described air supply pipe 43.

When the semiconductor wafer W is etched by the first rotary drive source 13 while the semiconductor wafer W is rotationally driven together with the turntable 2, the first rotary drive source 13 is driven to drive the first arm 21 by the first rotary drive source 13 Further, the first switching valve 39 is opened, and the etching liquid E is ejected onto the upper surface of the semiconductor wafer W from the first nozzle body 25 provided at the end portion of the first arm 21. borrow Thus, the semiconductor wafer W can be etched.

The state in which the etching of the semiconductor wafer W is performed may be performed by the thickness detecting sensor 29 positioned at the front end of the third arm 23 and positioned above the semiconductor wafer W. The change in the thickness of the semiconductor wafer W detected by the thickness detecting sensor 29 is compared with the pattern P showing the relationship between the time and thickness of the predetermined etching time set in the memory portion 33 by the comparing portion 34. The comparison result is judged by the determination unit 35 every predetermined time, for example, every few seconds.

A film of an organic substance is formed on the semiconductor wafer W to which the etching liquid E is supplied, or as shown in FIG. 6A, when the previous step is processed into the mirror surface m, as described above, the etching liquid E is formed on the upper surface of the semiconductor wafer W. The etching performed is slower or not performed than the above-described pattern P. This is in a state in which the etching liquid E is immediately discharged without staying on the surface of the semiconductor wafer W, and the etching treatment of the etching liquid E is not performed.

At this time, the comparison result of the determination unit 35 is determined to be relative to the upper side. In the graph P, the thickness of the semiconductor wafer W is thick. Moreover, when the amount of deviation between the pattern P and the thickness of the semiconductor wafer W to be measured is a predetermined amount or more, the output is output to the output unit 36.

Thereby, when it is determined that there is no change in the thickness of the semiconductor wafer W, The output unit 36 closes the first on-off valve 39, stops the supply of the etching liquid E, temporarily stops the etching process, and then opens the second on-off valve 42 and ejects the cleaning liquid L from the second nozzle body 26 to the semiconductor wafer. Thus, the etching liquid E remaining in the semiconductor wafer W can be removed by washing.

When the cleaning liquid L is ejected from the second nozzle body 26 for a predetermined time, it is washed. When the upper surface of the semiconductor wafer W is applied, the polishing means such as slurry or polishing powder is supplied to the upper surface of the semiconductor wafer W by the supply mechanism 30, and then the second arm 22 is driven to be driven by the second rotary drive source 14.

At the same time, the signal from the output unit 36 is opened at the above The third switching valve 44 of the air supply pipe 43 drives the air cylinder 28 provided at the front end portion of the second arm 22, and the polishing body 27 of the air cylinder 28 swings and holds the semiconductor wafer W that is rotationally driven on the rotary table 2 , while pressing the processing at a predetermined time.

Thereby, the above semiconductor wafer W is coated with the above abrasive The cloth having a thick and hard texture provided on the polishing body 27 is processed into a rough surface r as shown in Fig. 6B. Before the polishing agent is supplied onto the semiconductor wafer W, the upper surface of the semiconductor wafer W is washed with the cleaning liquid L, and the etching liquid E is removed by washing. Therefore, it is possible to prevent the polishing agent E from chemically reacting with the etching liquid E as the etching liquid E remains on the semiconductor wafer W, and the upper surface of the semiconductor wafer W is affected.

The change in the thickness of the semiconductor wafer W when the semiconductor wafer W is processed by the polishing body 27 can be detected by the thickness detecting sensor 29. Further, the change in the thickness of the semiconductor wafer W caused by the polishing body 27 is compared with the thickness bn of the time tn set in the pattern P of the memory portion 33.

Further, when the thickness of the semiconductor wafer W is changed from bn+α to the thickness bn set by the pattern P at the time tn of etching by the etching liquid, the polishing process by the polishing body 27 is completed. Thereby, it is possible to prevent the semiconductor wafer W from being excessively polished by the polishing body 27.

As shown in FIG. 6B, when the semiconductor is used as the above-described polishing body 27 When the upper surface of the wafer W is processed into the rough surface r, the polishing body 27 is retracted from the upper surface of the semiconductor wafer W, and then the first arm 21 is driven to be driven by the second rotation driving source 14. At the same time, the cleaning liquid L is ejected from the second nozzle body 26 for a predetermined period of time, and the polishing agent is removed from the upper surface of the semiconductor wafer W.

Next, the etching liquid E is ejected and supplied onto the upper surface of the semiconductor wafer W from the first nozzle body 25 provided at the end before the first arm 21. At this time, since the polishing agent does not remain on the upper surface of the semiconductor wafer W, it is possible to prevent the polishing agent from chemically reacting with the etching liquid E, and the upper surface of the semiconductor wafer W is deteriorated.

In this way, the semiconductor wafer W to which the etching liquid E is supplied can be ejected. The upper surface is processed into a rough surface r by the above-described polishing body 27. That is, since the film formed of, for example, an organic substance is removed from the upper surface of the semiconductor wafer W, or the surface of the mirror m is processed into a rough surface r, the etching liquid E stays on the upper surface of the semiconductor wafer W, so that it can be released. The etching liquid E is in a state of being etched on the upper surface of the semiconductor wafer W.

Thereby, the etching liquid E is ejected and supplied from the first nozzle body 25 described above. On top of the semiconductor wafer W, etching can be performed. Further, the thickness detecting sensor 29 detects the progress of the etching, and performs etching while being compared with the pattern P.

Further, during the etching, as described above, when the upper surface of the semiconductor wafer W is processed by the polishing body 27, the time required for the processing is measured. Further, when the polishing process is resumed, the thickness of the semiconductor wafer W measured by the time required for the correction processing is compared with the value shown by the above-described pattern P.

As described above, if the etching is not detected during the etching, After the upper surface of the semiconductor wafer W is processed into the rough surface r by the polishing body 27, etching is started.

Therefore, since the upper surface of the semiconductor wafer W is not etched into the liquid E In the case of row etching, this is detected, and after the rough surface r of the semiconductor wafer W is applied and etched, the etching is started, so that the semiconductor wafer W can be surely etched.

In the above-described embodiment, an example is described in which a separator is provided in the cup body and the etching liquid is collected and reused. When the etching liquid is used and discarded, it is not necessary to provide a separator in the cup body to recover the used one. Etching solution.

Further, the first nozzle is provided on the first arm, and the polishing body is provided on the second arm. The polishing body may be provided on the first arm together with the first and second nozzles.

Hereinafter, reference is made to FIGS. 1 to 4 and FIGS. 7A, 7B, and 7C. Fig. 8 shows a second embodiment of the invention. In addition, the description of the same functions as those of the above-described first embodiment of the rotation processing device will be omitted.

Further, the rotation processing apparatus of the present embodiment has an object of processing the semiconductor wafer W to have a shape of the rib portion WL at the outer peripheral portion. Further, a chemical solution (HF/HNO ₃ ) was used as the etching solution E used in the present embodiment.

The polishing body 27 used in the present embodiment is in contact with the above-mentioned half Sandpaper is provided on the surface of the surface of the conductor wafer W. Further, when the second arm 22 is rotationally driven by the second rotation drive source 14 within a predetermined angle range, the polishing body 27 can be held above the semiconductor wafer W of the turntable 2 as indicated by an arrow in FIG. Shake.

Therefore, when the polishing body 27 is shaken, the above-mentioned When the cylinder 28 is biased in the downward direction, the upper surface of the semiconductor wafer W is processed into a rough surface by the polishing body 27. Here, the thickness of the rough surface is such a degree that the chemical liquid described later can sufficiently stay.

The thickness detecting sensor 29 used in this embodiment is in addition to In addition to the laser displacement sensor, an end point sensor or the like can be used.

The thickness detecting sensor 29 is thereby driven by the third rotating driving source 15 As shown by an arrow in FIG. 2, the scan is shaken to detect the thickness of the semiconductor wafer W held on the turntable 2. That is, as will be described later, the thickness of the semiconductor wafer W etched by the etching liquid E or the thickness of the semiconductor wafer W processed into the rough surface by the polishing body 27 can be detected.

In such a rotation processing apparatus, it is performed as follows, and from FIG. 7A The disk-shaped semiconductor wafer W shown is formed on the semiconductor wafer W having the rib portion WL at the outer peripheral portion as shown in FIG. 7C. In other words, the polishing body 27 is actuated to roughen the center side WQ of the semiconductor wafer W where the rib portions are not formed, as shown in FIG. 7B.

Then, in a state in which the semiconductor wafer W is rotationally driven together with the turntable 2 by the first rotary drive source 13, the first rotary drive source 13 is used to vertically drive the first arm 21, and the first switch is opened. The valve 39 sprays and supplies the etching liquid E onto the upper surface of the semiconductor wafer W from the first nozzle 25 provided at the end of the first arm 21. Since the etching solution E stays in the recess of the roughened surface, the etching does not scatter from the semiconductor wafer W due to the rotation of the turntable 2. Therefore, etching can be promoted.

Further, at the time when the thickness of the center side WQ of the semiconductor wafer W detected by the thickness detecting sensor 29 is formed to a predetermined thickness, the above-described input The outlet portion 36 closes the first switching valve 39, stops the supply of the etching liquid E, and stops the etching process. Then, the second on-off valve 42 is opened, and the cleaning liquid L is ejected from the second nozzle body 26 to the semiconductor wafer W, whereby the etching liquid E remaining in the semiconductor wafer W can be washed and removed.

In addition, in the step of etching, it is also possible in the semiconductor wafer When the thickness is distributed in the WQ range of the center side of W, the polishing body 27 is re-actuated, and the portion having a large remaining thickness is roughened to promote the etching, and finally the thickness distribution is not generated.

Thus, even if the rib portion is provided on the outer periphery of the semiconductor wafer W In the case of WL, the grinding process is not required, and the etching by the chemical liquid can be chemically removed. Therefore, the semiconductor wafer W is not burdened, the stress removal step is not required, the steps are simplistic, the productivity is improved, and the manufacturing cost is lowered. Also, cracks do not enter the semiconductor wafer W.

Further, Fig. 8 is a view schematically showing a modification of the embodiment. Longitudinal section. In FIG. 8, the same portions as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted. Fig. 8 shows a laser beam processing in which a laser irradiation unit 27 is provided instead of the above-described polishing body 27. In this manner, the laser beam processing can also be used to roughen the center side WQ of the semiconductor wafer W.

Further, the abrasive body 27 is not limited to a sandpaper or a laser beam, as long as For example, a cutter, a shot blasting, a blasting, a dry ice, or the like may be used to appropriately roughen the surface of the semiconductor wafer W into a rough surface.

Further, the present invention is not limited to the above embodiments. Example The etched substrate is exemplified by a semiconductor wafer, and a semiconductor substrate for a liquid crystal display device or the like is used as a substrate instead of a semiconductor wafer. It can also be applied during the etching process. Further, the polishing body or the thickness detecting sensor may be scanned by shaking and may be scanned in the XY direction of the horizontal plane. Further, various modifications may be made without departing from the spirit and scope of the invention.

1‧‧‧ cup body

2‧‧‧Rotating table

2a‧‧‧ Keep selling

3‧‧‧Site drive source

4‧‧‧Separator

4a‧‧‧ sloping wall

5‧‧‧Internal Space Department

6‧‧‧Outside Space Department

7‧‧‧Up and down drive source

8‧‧‧1st waste pipe

9‧‧‧2nd waste pipe

11‧‧‧Processing regeneration unit

13‧‧‧1st rotary drive source

14‧‧‧2nd rotary drive source

15‧‧‧3rd rotary drive source

16‧‧‧1st shaft

17‧‧‧2nd axis

18‧‧‧3rd axis

21‧‧‧1st arm

22‧‧‧2nd arm

23‧‧‧3rd arm

25‧‧‧1st nozzle body

26‧‧‧2nd nozzle body

27‧‧‧ grinding body

28‧‧‧ cylinder

29‧‧‧ thickness detection sensor

E‧‧‧etching solution

L‧‧‧ cleaning solution

W‧‧‧Semiconductor Wafer

Claims (8)

A substrate processing apparatus for etching a surface of a substrate with an etching solution, comprising: an etching liquid supply mechanism for supplying an etching liquid to a surface of the substrate; and a thickness detecting mechanism for detecting etching by the etching liquid The thickness of the substrate; the control mechanism interrupts the etching by the etching liquid when the thickness of the substrate detected by the thickness detecting mechanism is more than a predetermined thickness with respect to a predetermined thickness; and the processing mechanism When the etching by the etching liquid is interrupted, the surface of the substrate is processed into a rough surface. A processing apparatus for a substrate according to claim 1, wherein the control means drives the processing means to process the surface of the substrate into a rough surface, and then the etching by the etching liquid is resumed. The processing apparatus for a substrate according to claim 1, comprising: a cleaning mechanism for cleaning a surface of the substrate; wherein the control unit interrupts the etching liquid supply mechanism according to the detection by the thickness detecting mechanism; When the surface of the substrate is etched, the surface of the substrate is processed into a rough surface by the processing means, and the surface of the substrate is processed into a rough surface by the processing means, and the substrate is made by the cleaning mechanism. Wash the board. A processing device for a substrate according to claim 1 of the patent scope, which is included in a rotating table that is rotatably driven by holding the substrate, and the etching liquid supply mechanism has a swing arm driven by a driving source, a front end of the swing arm, and the swing arm is horizontally above the substrate The etching liquid can be sprayed onto the substrate by shaking. The processing apparatus for a substrate according to claim 1, wherein when the surface of the substrate is processed into a rough surface by the processing means, the thickness of the substrate can be measured by the thickness detecting means. The processing device for a substrate according to the first aspect of the invention, wherein the control unit is provided with a memory portion that sets a relationship between an etching time of the substrate and a variation of a film thickness by the etching liquid, Further, the control means determines whether or not the thickness of the substrate detected by the thickness detecting means is greater than or equal to a predetermined range with respect to the thickness of the substrate determined based on the relationship set in the memory portion. A substrate processing method for etching a surface of a substrate with an etching solution, comprising the steps of: supplying an etching liquid to a surface of the substrate; and the thickness of the substrate due to the etching is relatively predetermined When the thickness is greater than or equal to the predetermined range, the etching by the etching liquid is interrupted; and when the etching is interrupted, the surface of the substrate is processed into a rough surface, and then etching is started. The processing method of the substrate according to item 7 of the patent application, which includes the following In the step of: after the step of interrupting the etching, the surface of the substrate is processed into a rough surface, and when the surface of the substrate is processed into a rough surface, the surface of the substrate is washed.