TW201535506A - Substrate processing device and method - Google Patents
Substrate processing device and method Download PDFInfo
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- TW201535506A TW201535506A TW104113076A TW104113076A TW201535506A TW 201535506 A TW201535506 A TW 201535506A TW 104113076 A TW104113076 A TW 104113076A TW 104113076 A TW104113076 A TW 104113076A TW 201535506 A TW201535506 A TW 201535506A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
Description
此發明係有關於使用蝕刻液來蝕刻半導體晶圓等基板之板面之基板之處理裝置及處理方法。 This invention relates to a processing apparatus and a processing method for etching a substrate on a board surface of a substrate such as a semiconductor wafer using an etching solution.
舉例言之，在半導體之製程中，已知有使用蝕刻液來去除形成於半導體晶圓之表面之氧化膜、氮化膜或鋁膜等的蝕刻步驟。 For example, in the semiconductor process, an etching step using an etching solution to remove an oxide film, a nitride film, or an aluminum film formed on the surface of the semiconductor wafer is known.
以蝕刻液去除形成於半導體晶圓之表面之膜時，為使該膜厚形成設定之厚度，習知僅於預先設定之時間進行蝕刻加工，或一面以膜厚感測器檢測上述半導體晶圓之厚度一面進行，藉此，將上述半導體晶圓蝕刻加工成所期之厚度。 When the film formed on the surface of the semiconductor wafer is removed by the etching liquid, in order to form the film thickness to a predetermined thickness, it is known to perform etching processing only at a predetermined time or to detect the semiconductor wafer with a film thickness sensor. The thickness is performed on one side, whereby the semiconductor wafer is etched into a desired thickness.
又，產生以後步驟之處理於外周部形成肋條形狀等製造有底筒狀半導體晶圓之必要。為於外周部形成肋條形狀，以研磨機等將半導體晶圓之中心側研磨加工，去除外周部以外。此外，研磨加工後，為去除應力，乃進行濕式蝕刻。 Further, it is necessary to produce a bottomed cylindrical semiconductor wafer by forming a rib shape on the outer peripheral portion in the subsequent step. In order to form a rib shape on the outer peripheral portion, the center side of the semiconductor wafer is polished by a grinder or the like to remove the outer peripheral portion. Further, after the polishing process, wet etching is performed to remove stress.
專利文獻1 日本專利公開公報2002-319562號 Patent Document 1 Japanese Patent Laid-Open Publication No. 2002-319562
然而，有於形成於上述半導體晶圓之膜之表面附著有一般使用之蝕刻液無法蝕刻之有機物的情形，此時，有有機物之膜形成為遮蔽而蝕刻不進行之情形。 However, there is a case where an organic substance which cannot be etched by a commonly used etching liquid adheres to the surface of the film formed on the semiconductor wafer. In this case, the film of the organic substance is shielded and etching is not performed.
再者，有上述半導體晶圓於搬送至蝕刻步驟之前步驟以CMP(Chemical Mechanical Polishing：化學機械研磨)鏡面加工之情形。業經鏡面加工之半導體晶圓之面、亦即鏡面形成為蝕刻液不易作用之狀態。因此，亦有此時蝕刻液之蝕刻不進行之情形。 Further, in the case where the semiconductor wafer is transferred to the etching step, the CMP (Chemical Mechanical Polishing) mirror processing is performed. The surface of the mirror-processed semiconductor wafer, that is, the mirror surface, is formed in a state in which the etching liquid is not easily applied. Therefore, there is also a case where etching of the etching liquid is not performed at this time.
又，當因上述理由等，半導體晶圓之蝕刻不進行時，便無法將半導體晶圓蝕刻加工成所期之厚度。 Further, when the etching of the semiconductor wafer is not performed for the above reasons or the like, the semiconductor wafer cannot be etched into a desired thickness.
又，以研磨加工研磨中心側時，因需將黏著帶貼附於半導體晶圓之背面，故需要於研磨加工前後貼、撕黏著帶之步驟。再者，因追加步驟需要前述之應力去除步驟或洗淨步驟，步驟複雜化，而有生產性降低等之問題。此外，由於研磨加工雖加工效率佳，但有裂紋進入半導體晶圓之情形，故亦有無法使加工速度為一定以上之問題。 Further, when polishing the center side of the polishing, since the adhesive tape needs to be attached to the back surface of the semiconductor wafer, it is necessary to attach and tear the tape before and after the polishing process. Further, since the above-described stress removing step or washing step is required for the additional step, the steps are complicated, and there is a problem that productivity is lowered. Further, since the polishing process is excellent in processing efficiency, but cracks enter the semiconductor wafer, there is a problem that the processing speed cannot be made constant or more.
此發明在於提供即使於基板之板面形成有有機物之膜或上述板面為鏡面等，亦可將上述基板以蝕刻液確實地蝕刻成所期之厚度之基板之處理裝置及處理方法。 According to the present invention, there is provided a processing apparatus and a processing method for providing a substrate having a thickness of a desired thickness by etching an etchant even if a film of an organic substance is formed on a surface of a substrate or the surface of the surface is a mirror surface.
又，此發明在於提供基板之處理裝置及處理方法，該基板之處理裝置及處理方法係藉於製造具有外周肋條形狀之半導體晶圓之際，不使用研磨步驟而減少處理步驟，使步驟單純化，藉此，可謀求生產性提高。 Moreover, the present invention provides a processing apparatus and a processing method for a substrate. The processing apparatus and the processing method of the substrate are used to manufacture a semiconductor wafer having a peripheral rib shape, and the processing step is reduced without using a polishing step, and the step is simplified. In this way, productivity can be improved.
此發明係以蝕刻液蝕刻基板之板面之基板之處理裝置，其特徵在於包含有蝕刻液供給機構、厚度檢測機構、控制機構及加工機構，該蝕刻液供給機構係將蝕刻液供給至前述基板之板面者；該厚度檢測機構係檢測以前述蝕刻液蝕刻之前述基板之厚度者；該控制機構係於以該厚度檢測機構檢測之前述基板之厚度為異常時，使以前述蝕刻液所作之蝕刻中斷者；該加工機構係於中斷以前述蝕刻液所作之蝕刻時，將前述基板之板面加工成粗面者。 The present invention relates to a processing apparatus for etching a substrate on a surface of a substrate with an etching solution, comprising: an etching liquid supply mechanism, a thickness detecting mechanism, a control mechanism, and a processing mechanism, wherein the etching liquid supply mechanism supplies the etching liquid to the substrate The thickness detecting means detects the thickness of the substrate etched by the etching liquid; and the control means performs the etching liquid when the thickness of the substrate detected by the thickness detecting means is abnormal The etching interrupter; the processing mechanism is configured to process the surface of the substrate into a rough surface when the etching by the etching liquid is interrupted.
此發明係以蝕刻液蝕刻基板之板面之基板之處理方法，其特徵在於包含有下列步驟：(1)將蝕刻液供給至前述基板之板面；(2)於因前述蝕刻所引起之前述基板之厚度之變化異常時，中斷以前述蝕刻液所作之蝕刻；(3)於中斷前述蝕刻時，將前述基板之板面加工成粗面後，再開始蝕刻。 The invention is directed to a method of etching a substrate on a surface of a substrate with an etching solution, comprising the steps of: (1) supplying an etching solution to a surface of the substrate; and (2) causing the foregoing etching When the change in the thickness of the substrate is abnormal, the etching by the etching liquid is interrupted; and (3) when the etching is interrupted, the surface of the substrate is processed into a rough surface, and then etching is started.
根據此發明，藉判斷蝕刻時之基板之厚度是否變化，而判定是否已蝕刻基板，於未執行蝕刻時，中斷蝕刻，將上述基板之板面加工成粗面後，再開始蝕刻。 According to the invention, it is determined whether or not the thickness of the substrate is changed during etching, and whether or not the substrate has been etched is etched. When the etching is not performed, the etching is interrupted, and the surface of the substrate is processed into a rough surface, and then etching is started.
因此，藉將上述基板之板面加工成粗面，可去除 為阻礙基板之蝕刻之進行之原因的例如形成於基板板面之有機物之膜，或從蝕刻液不易作用之鏡面之狀態呈易作用之粗面，故可將上述基板確實地蝕刻成所期之厚度。 Therefore, the surface of the substrate can be removed by processing the surface of the substrate. In order to hinder the progress of the etching of the substrate, for example, a film of an organic substance formed on the surface of the substrate, or a rough surface which is easy to act from a state in which the etching liquid does not easily act, the substrate can be surely etched into a desired period. thickness.
1‧‧‧杯體 1‧‧‧ cup body
2‧‧‧旋轉台 2‧‧‧Rotating table
2a‧‧‧保持銷 2a‧‧‧ Keep selling
3‧‧‧台用驅動源 3‧‧‧Site drive source
4‧‧‧分隔體 4‧‧‧Separator
4a‧‧‧傾斜壁 4a‧‧‧ sloping wall
5‧‧‧內側空間部 5‧‧‧Internal Space Department
6‧‧‧外側空間部 6‧‧‧Outside Space Department
7‧‧‧上下驅動源 7‧‧‧Up and down drive source
8‧‧‧第1廢液管 8‧‧‧1st waste pipe
9‧‧‧第2廢液管 9‧‧‧2nd waste pipe
11‧‧‧處理再生單元 11‧‧‧Processing regeneration unit
13‧‧‧第1旋轉驅動源 13‧‧‧1st rotary drive source
14‧‧‧第2旋轉驅動源 14‧‧‧2nd rotary drive source
15‧‧‧第3旋轉驅動源 15‧‧‧3rd rotary drive source
16‧‧‧第1軸體 16‧‧‧1st shaft
17‧‧‧第2軸體 17‧‧‧2nd axis
18‧‧‧第3軸體 18‧‧‧3rd axis
21‧‧‧第1臂 21‧‧‧1st arm
22‧‧‧第2臂 22‧‧‧2nd arm
23‧‧‧第3臂 23‧‧‧3rd arm
25‧‧‧第1噴嘴體 25‧‧‧1st nozzle body
26‧‧‧第2噴嘴體 26‧‧‧2nd nozzle body
27‧‧‧研磨體 27‧‧‧ grinding body
27A‧‧‧雷射照射部 27A‧‧‧Laser Illumination Department
28‧‧‧氣缸 28‧‧‧ cylinder
29‧‧‧厚度檢測感測器 29‧‧‧ thickness detection sensor
30‧‧‧供給機構 30‧‧‧Supply institutions
31‧‧‧控制裝置 31‧‧‧Control device
32‧‧‧設定部 32‧‧‧Setting Department
33‧‧‧記憶部 33‧‧‧Memory Department
34‧‧‧比較部 34‧‧‧Comparative Department
35‧‧‧判定部 35‧‧‧Decision Department
36‧‧‧輸出部 36‧‧‧Output Department
38‧‧‧第1供液管 38‧‧‧1st liquid supply pipe
39‧‧‧第1開關閥 39‧‧‧1st on-off valve
41‧‧‧第2供液管 41‧‧‧2nd liquid supply pipe
42‧‧‧第2開關閥 42‧‧‧2nd on-off valve
43‧‧‧供氣管 43‧‧‧ gas supply pipe
44‧‧‧第3開關閥 44‧‧‧3rd on-off valve
A‧‧‧加壓氣體 A‧‧‧Pressure gas
b，bn，bn+α‧‧‧半導體晶圓之厚度 b, bn, bn+α‧‧‧ thickness of semiconductor wafer
E‧‧‧蝕刻液 E‧‧‧etching solution
L‧‧‧洗淨液 L‧‧‧ cleaning solution
m‧‧‧鏡面 m‧‧‧Mirror
P‧‧‧圖形 P‧‧‧ graphics
r‧‧‧粗面 R‧‧‧
tn‧‧‧時間 Tn‧‧‧ time
W‧‧‧半導體晶圓 W‧‧‧Semiconductor Wafer
WL‧‧‧肋條部 WL‧‧‧ Ribs
WQ‧‧‧中心側 WQ‧‧‧ center side
圖1係顯示此發明第1實施形態之旋轉處理裝置之概略圖。 Fig. 1 is a schematic view showing a rotation processing apparatus according to a first embodiment of the present invention.
圖2係圖1所示之旋轉處理裝置之平面圖。 Figure 2 is a plan view of the rotary processing apparatus shown in Figure 1.
圖3係蝕刻液、洗淨液及加壓系統之配管系統圖。 Fig. 3 is a piping system diagram of an etching solution, a cleaning liquid, and a pressurizing system.
圖4係控制設於圖3所示之配管系統圖之第1至第3開關閥的控制裝置之結構圖。 Fig. 4 is a structural view showing a control device for controlling the first to third on-off valves provided in the piping system diagram shown in Fig. 3.
圖5係顯示蝕刻時之半導體晶圓之厚度之變化與時間之關係的圖表。 Figure 5 is a graph showing the change in thickness of a semiconductor wafer during etching versus time.
圖6A係顯示蝕刻之面為鏡面之半導體晶圓之一部份的放大圖。 Figure 6A is an enlarged view showing a portion of a semiconductor wafer whose etched surface is a mirror surface.
圖6B係顯示蝕刻之面從鏡面加工成粗面之半導體晶圓之一部份的放大圖。 Figure 6B is an enlarged view showing a portion of a semiconductor wafer from which the etched surface is mirrored to a rough surface.
圖7A係示意地顯示使用此發明之第2實施形態之旋轉處理裝置處理中之半導體晶圓的縱截面圖。 Fig. 7A is a longitudinal cross-sectional view schematically showing a semiconductor wafer in a process of the rotation processing apparatus according to the second embodiment of the present invention.
圖7B係示意地顯示該半導體晶圓之縱截面圖。 Fig. 7B is a longitudinal sectional view schematically showing the semiconductor wafer.
圖7C係示意地顯示該半導體晶圓之縱截面圖。 Fig. 7C is a schematic longitudinal sectional view showing the semiconductor wafer.
圖8係示意地顯示該旋轉處理裝置之變形例之縱截面圖。 Fig. 8 is a longitudinal sectional view schematically showing a modification of the rotary processing apparatus.
以下，一面參照圖式，一面說明此發明之第1實施形態。 Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.
圖1及圖2顯示作為處理裝置之旋轉處理裝置，此旋轉處理裝置具有杯體1。於此杯體1之內部設有旋轉台2。此旋轉台2可以台用驅動源3旋轉驅動，作為基板之半導體晶圓W以複數保持銷2a以水平狀態可裝卸地保持於其上面。亦即，上述半導體晶圓W以可與此旋轉台2一體地旋轉之狀態保持於上述旋轉台2。 1 and 2 show a rotation processing apparatus as a processing apparatus having a cup body 1. A rotary table 2 is provided inside the cup body 1. The turntable 2 can be rotationally driven by the drive source 3, and the semiconductor wafer W as a substrate can be detachably held thereon by a plurality of holding pins 2a in a horizontal state. In other words, the semiconductor wafer W is held by the turntable 2 in a state of being rotatable integrally with the turntable 2.
如圖1所示，於上述杯體1之內部設有將此內部區隔成內側空間部5與外側空間部6之筒狀分隔體4，此分隔體4可以複數上下驅動源7於上下方向驅動。 As shown in Fig. 1, a cylindrical separator 4 that partitions the inner portion into an inner space portion 5 and an outer space portion 6 is provided inside the cup body 1. The partition body 4 can vertically drive the source 7 in a vertical direction. drive.
上述分隔體4位於上升位置時，如後述，供給至與上述旋轉台2一同旋轉之上述半導體晶圓W之上面而以離心力飛散至周圍的蝕刻液E撞擊上述分隔體4之內周面而滴下至上述內側空間部5。 When the separator 4 is at the rising position, as will be described later, the etching liquid E which is supplied to the upper surface of the semiconductor wafer W which rotates together with the rotating table 2 and which is scattered by centrifugal force to the periphery hits the inner peripheral surface of the separator 4 and drops. To the inner space portion 5 described above.
如圖1所示，於上述分隔體4位於下降位置時，形成於此分隔體4之上端部之傾斜壁4a之上端定位於稍低於上述半導體晶圓W之上面之位置。藉此，如後述，供給至旋轉之上述半導體晶圓W之上面而以離心力飛散至周圍之洗淨液L可滴下至上述外側空間部6。 As shown in FIG. 1, when the separator 4 is at the lowered position, the upper end of the inclined wall 4a formed at the upper end portion of the separator 4 is positioned slightly below the upper surface of the semiconductor wafer W. As a result, as will be described later, the cleaning liquid L supplied to the upper surface of the rotating semiconductor wafer W and scattered by the centrifugal force to the periphery can be dropped onto the outer space portion 6.
於上述杯體1之底部之對應於上述內側空間部5的部位連接有第1廢液管8，於對應於上述外側空間部6之部位連接有第2廢液管9。流至上述第1廢液管8之上述蝕刻液E引導至處理再生單元11而淨化，而可如後述再使用。引導 至上述第2廢液管9之洗淨液L進行淨化處理而廢棄。 A first waste liquid pipe 8 is connected to a portion corresponding to the inner space portion 5 at the bottom of the cup body 1, and a second waste liquid pipe 9 is connected to a portion corresponding to the outer space portion 6. The etching liquid E flowing to the first waste liquid pipe 8 is guided to the processing regeneration unit 11 for purification, and can be reused as will be described later. guide The cleaning liquid L to the second waste liquid pipe 9 is subjected to purification treatment and discarded.
如圖1及圖2所示，於上述杯體1之外部配置有第1 旋轉驅動源13、第2旋轉驅動源14及第3旋轉驅動源15。以各驅動源13、14、15分別旋轉驅動之第1軸體16、第2軸體17、第3軸體18垂直地設於各驅動源13、14、15。 As shown in FIG. 1 and FIG. 2, the first part is disposed outside the cup body 1. The drive source 13 , the second rotary drive source 14 , and the third rotary drive source 15 are rotated. The first shaft body 16, the second shaft body 17, and the third shaft body 18 that are rotationally driven by the respective drive sources 13, 14, and 15 are vertically provided to the respective drive sources 13, 14, and 15.
第1臂21之基端連結於上述第1軸體16之上端而 保持成水平，第2臂22之基端連結於第2軸體17之上端而保持成水平。第3臂23之基端連結於第3軸體18之上端而保持成水平。 The base end of the first arm 21 is coupled to the upper end of the first shaft body 16 The base end of the second arm 22 is connected to the upper end of the second shaft body 17 and held horizontal. The base end of the third arm 23 is coupled to the upper end of the third shaft body 18 to be horizontal.
於上述第1臂21之前端部設有蝕刻液用第1噴嘴體25、作為洗淨體之純水用第2噴嘴體26。又，當上述第1臂21以上述第1旋轉驅動源13在預定角度範圍旋轉驅動時，上述第1噴嘴體25與第2噴嘴體26在保持於上述旋轉台2之半導體晶圓W之上方沿著徑方向，如圖2箭號所示搖動。 The first nozzle body 25 for etching liquid and the second nozzle body 26 for pure water as a cleaning body are provided at the end portion of the first arm 21 . Further, when the first arm 21 is rotationally driven by the first rotational driving source 13 in a predetermined angular range, the first nozzle body 25 and the second nozzle body 26 are held above the semiconductor wafer W of the rotating table 2. In the radial direction, shake as shown by the arrow in Figure 2.
作為將保持於上述旋轉台2之半導體晶圓W之上 面加工成粗面之加工機構的盤狀研磨體27以可以氣缸28於上下方向驅動之狀態設於上述第2臂22之前端部。 As a semiconductor wafer W to be held on the above rotating table 2 The disk-shaped polishing body 27 which is processed into a rough surface processing means is provided at the front end of the second arm 22 in a state where the cylinder 28 can be driven in the vertical direction.
上述研磨體27於接觸上述半導體晶圓W之板面之面設有布紋較用於將上述半導體晶圓W之板面鏡面加工時之布料粗且硬的布料。又，當上述第2臂22以上述第2旋轉驅動源14在預定角度範圍旋轉驅動時，上述研磨體27在保持於上述旋轉台2之半導體晶圓W之上方如圖2箭號所示，搖動。 The polishing body 27 is provided with a cloth having a thicker and harder cloth than that used to mirror the surface of the semiconductor wafer W on the surface of the surface of the semiconductor wafer W. Further, when the second arm 22 is rotationally driven by the second rotation drive source 14 within a predetermined angle range, the polishing body 27 is held above the semiconductor wafer W of the turntable 2 as indicated by an arrow in FIG. Shake.
因而，若一面使上述研磨體27搖動，一面以上述 氣缸28賦與往下降方向之勢能時，不以上述研磨體27將上 述半導體晶圓W之上面鏡面加工，而加工成較鏡面粗之粗面。 Therefore, when the polishing body 27 is shaken, the above-mentioned When the cylinder 28 is given a potential energy in the descending direction, the upper portion of the grinding body 27 is not used. The upper surface of the semiconductor wafer W is mirror-finished and processed into a rough surface which is thicker than the mirror surface.
此外，上述研磨體27不限於使用布紋粗、硬之布料，亦可為使粒徑較大之磨料附著於布料者，要點為可使半導體晶圓W之板面加工成粗面者即可。 Further, the polishing body 27 is not limited to the use of a cloth having a thick and hard cloth, and may be an abrasive having a large particle diameter attached to the fabric, and the main point is that the surface of the semiconductor wafer W can be processed into a rough surface. .
於上述第3臂23之前端部設有為檢測上述半導體晶圓W之厚度之厚度檢測機構的厚度檢測感測器29。此厚度檢測機構例如為雷射變位感測器。此厚度檢測感測器29藉使上述第3臂23以上述第3旋轉驅動源15如圖2以箭號所示搖動而掃瞄，而檢測保持於上述旋轉台2之半導體晶圓W之厚度。亦即，如後述，可檢測業經以蝕刻液E所作之蝕刻之上述半導體晶圓W的厚度或業經以上述研磨體27加工成粗面之上述半導體晶圓W之厚度。 A thickness detecting sensor 29 for detecting a thickness of the semiconductor wafer W is provided at an end portion of the third arm 23 before the end. This thickness detecting mechanism is, for example, a laser displacement sensor. The thickness detecting sensor 29 detects the thickness of the semiconductor wafer W held by the rotating table 2 by the third arm 23 being scanned by the third rotating driving source 15 as indicated by an arrow in FIG. . That is, as will be described later, the thickness of the semiconductor wafer W which has been etched by the etching liquid E or the thickness of the semiconductor wafer W which has been processed into a rough surface by the polishing body 27 can be detected.
如圖4所示，上述厚度檢測感測器29之檢測信號 可輸出至控制裝置31。於控制裝置31連接設定部32，藉此設定部32，於內藏於上述控制裝置31之記憶部33如圖5所示，設定顯示正常狀態之以蝕刻液所作之上述半導體晶圓W之蝕刻時間與厚度之關係的直線狀圖形P。此圖形P為顯示蝕刻量對蝕刻時間之設定值。 As shown in FIG. 4, the detection signal of the thickness detecting sensor 29 is as shown in FIG. It can be output to the control device 31. The control unit 31 is connected to the setting unit 32, and the setting unit 32 sets the etching of the semiconductor wafer W by the etching liquid in a normal state as shown in FIG. 5 in the memory unit 33 built in the control unit 31. A linear pattern P of time and thickness. This pattern P is a set value indicating the etching amount versus the etching time.
此外，圖形P之傾斜角度依蝕刻液E之濃度或種 類等性能而不同。 In addition, the tilt angle of the pattern P depends on the concentration or species of the etching solution E. Classes and other properties vary.
當以蝕刻液E開始半導體晶圓W之蝕刻時，便將 以上述厚度檢測感測器29檢測之上述半導體晶圓W之厚度b的變化輸出至比較部34。在此比較部34，每當蝕刻經過預 定時間，在該時間之以上述厚度檢測感測器29檢測之上述半導體晶圓W的厚度b與設定於上述記憶部33之上述記憶部33之上述圖形P比較。 When the etching of the semiconductor wafer W is started with the etching solution E, The change in the thickness b of the semiconductor wafer W detected by the thickness detecting sensor 29 is output to the comparing portion 34. In this comparison section 34, whenever the etching passes The thickness b of the semiconductor wafer W detected by the thickness detecting sensor 29 at this time is compared with the pattern P of the memory unit 33 set in the memory unit 33.
又，於以上述厚度檢測感測器29檢測之上述半導 體晶圓W之厚度b的變化對上述圖形P偏離預定範圍以上時，如圖5所示，舉例言之，在時間tn，在圖形P，半導體晶圓W之厚度為bn，相對於此，在測定值，其厚度為bn+α時，此以判定部35判定，將該判定信號輸出至輸出部36。 Further, the above-described semi-conductance detected by the thickness detecting sensor 29 is used When the change in the thickness b of the bulk wafer W is more than a predetermined range from the pattern P, as shown in FIG. 5, for example, at time tn, the thickness of the semiconductor wafer W is bn in the pattern P, and When the measured value is bn + α, the determination unit 35 determines that the determination signal is output to the output unit 36.
如圖3及圖4所示，上述輸出部36可輸出驅動上述 台用驅動源3、第1至第3旋轉驅動源13~15之驅動信號。進一步，上述輸出部36輸出驅動信號，該驅動信號係開關設於將蝕刻液E供至上述第1噴嘴體25之第1供液管38之第1開關閥39、設於將洗淨液L供至上述第2噴嘴體26之第2供液管41之第2開關閥42、設於將加壓氣體A供至上述氣缸28之供氣管43之第3開關閥44。 As shown in FIG. 3 and FIG. 4, the output unit 36 can output and drive the above. The drive signal of the stage drive source 3 and the first to third rotary drive sources 13 to 15. Further, the output unit 36 outputs a drive signal that is provided in the first on-off valve 39 that supplies the etching liquid E to the first liquid supply pipe 38 of the first nozzle body 25, and is provided in the cleaning liquid L. The second on-off valve 42 supplied to the second supply pipe 41 of the second nozzle body 26 is provided in the third on-off valve 44 that supplies the pressurized gas A to the air supply pipe 43 of the cylinder 28.
從上述處理再生單元11將蝕刻液E供至上述第1供液管38，從圖中未示之洗淨液L之供給源將洗淨液L供至上述第2供液管41，從圖中未示之供氣源將加壓氣體A供至上述供氣管43。 The etching liquid E is supplied from the processing and regenerating unit 11 to the first liquid supply pipe 38, and the cleaning liquid L is supplied to the second liquid supply pipe 41 from a supply source of the cleaning liquid L (not shown). The supply air source (not shown) supplies the pressurized gas A to the above-described air supply pipe 43.
於將上述半導體晶圓W蝕刻加工時，在以上述第1旋轉驅動源13將半導體晶圓W與旋轉台2一同旋轉驅動之狀態下，以上述第1旋轉驅動源13搖動驅動第1臂21，並且，開放上述第1開關閥39，從設於上述第1臂21之前端部之第1噴嘴體25對上述半導體晶圓W之上面噴射供給蝕刻液E。藉 此，可蝕刻上述半導體晶圓W。 When the semiconductor wafer W is etched by the first rotary drive source 13 while the semiconductor wafer W is rotationally driven together with the turntable 2, the first rotary drive source 13 is driven to drive the first arm 21 by the first rotary drive source 13 Further, the first switching valve 39 is opened, and the etching liquid E is ejected onto the upper surface of the semiconductor wafer W from the first nozzle body 25 provided at the end portion of the first arm 21. borrow Thus, the semiconductor wafer W can be etched.
上述半導體晶圓W之蝕刻之進行狀態可以設於第3臂23之前端部且定位於上述半導體晶圓W之上方之厚度檢測感測器29檢測。以厚度檢測感測器29所檢測出之上述半導體晶圓W之厚度之變化以比較部34與顯示設定於上述記憶部33之預定蝕刻時之時間與厚度之變化的關係之圖形P比較，其比較結果以判定部35每隔預定時間、例如每隔數秒比較判定。 The state in which the etching of the semiconductor wafer W is performed may be performed by the thickness detecting sensor 29 positioned at the front end of the third arm 23 and positioned above the semiconductor wafer W. The change in the thickness of the semiconductor wafer W detected by the thickness detecting sensor 29 is compared with the pattern P showing the relationship between the time and thickness of the predetermined etching time set in the memory portion 33 by the comparing portion 34. The comparison result is judged by the determination unit 35 every predetermined time, for example, every few seconds.
於上述半導體晶圓W之供給蝕刻液E之上面形成有有機物之膜，或如圖6A所示，以前步驟加工成鏡面m時，如上述，有上述半導體晶圓W之上面之以蝕刻液E所作的蝕刻相較於上述圖形P進行慢或不進行之情形。此呈下述狀態，前述狀態係蝕刻液E不停留於半導體晶圓W之表面上而立即排出，蝕刻液E之蝕刻處理不進行。 A film of an organic substance is formed on the semiconductor wafer W to which the etching liquid E is supplied, or as shown in FIG. 6A, when the previous step is processed into the mirror surface m, as described above, the etching liquid E is formed on the upper surface of the semiconductor wafer W. The etching performed is slower or not performed than the above-described pattern P. This is in a state in which the etching liquid E is immediately discharged without staying on the surface of the semiconductor wafer W, and the etching treatment of the etching liquid E is not performed.
此時，上述判定部35之比較結果判定為相對於上 述圖形P，半導體晶圓W之厚度厚。又，當上述圖形P與所測定之半導體晶圓W之厚度之偏離量為預定量以上時，便將此輸出至輸出部36。 At this time, the comparison result of the determination unit 35 is determined to be relative to the upper side. In the graph P, the thickness of the semiconductor wafer W is thick. Moreover, when the amount of deviation between the pattern P and the thickness of the semiconductor wafer W to be measured is a predetermined amount or more, the output is output to the output unit 36.
藉此，當判斷為半導體晶圓W之厚度無變化後， 上述輸出部36關閉第1開關閥39，停止蝕刻液E之供給，使蝕刻處理暫時停止，然後，開啟第2開關閥42，從第2噴嘴體26將洗淨液L噴射供至半導體晶圓W，藉此，可洗淨去除殘留於半導體晶圓W之蝕刻液E。 Thereby, when it is determined that there is no change in the thickness of the semiconductor wafer W, The output unit 36 closes the first on-off valve 39, stops the supply of the etching liquid E, temporarily stops the etching process, and then opens the second on-off valve 42 and ejects the cleaning liquid L from the second nozzle body 26 to the semiconductor wafer. Thus, the etching liquid E remaining in the semiconductor wafer W can be removed by washing.
當從上述第2噴嘴體26噴射洗淨液L預定時間而洗淨上 述半導體晶圓W之上面時，以供給機構30將漿或研磨粉等研磨劑供至上述半導體晶圓W之上面後，以第2旋轉驅動源14搖動驅動第2臂22。 When the cleaning liquid L is ejected from the second nozzle body 26 for a predetermined time, it is washed. When the upper surface of the semiconductor wafer W is applied, the polishing means such as slurry or polishing powder is supplied to the upper surface of the semiconductor wafer W by the supply mechanism 30, and then the second arm 22 is driven to be driven by the second rotary drive source 14.
與此同時，從上述輸出部36以信號開放設於上述 供氣管43之第3開關閥44，而驅動設於上述第2臂22之前端部之氣缸28，一面藉此氣缸28研磨體27搖動保持於旋轉台2而旋轉驅動之半導體晶圓W之上面，一面以預定時間按壓加工。 At the same time, the signal from the output unit 36 is opened at the above The third switching valve 44 of the air supply pipe 43 drives the air cylinder 28 provided at the front end portion of the second arm 22, and the polishing body 27 of the air cylinder 28 swings and holds the semiconductor wafer W that is rotationally driven on the rotary table 2 , while pressing the processing at a predetermined time.
藉此，上述半導體晶圓W之上面藉由上述研磨劑 以設於上述研磨體27之布紋粗且硬之布料，如圖6B所示，加工成粗面r。在將研磨劑供至上述半導體晶圓W之上面前，以洗淨液L洗淨上述半導體晶圓W之上面，而洗淨去除蝕刻液E。因此，可防止如蝕刻液E殘留於半導體晶圓W之上面般，研磨劑與蝕刻液E起化學反應，半導體晶圓W之上面受到影響。 Thereby, the above semiconductor wafer W is coated with the above abrasive The cloth having a thick and hard texture provided on the polishing body 27 is processed into a rough surface r as shown in Fig. 6B. Before the polishing agent is supplied onto the semiconductor wafer W, the upper surface of the semiconductor wafer W is washed with the cleaning liquid L, and the etching liquid E is removed by washing. Therefore, it is possible to prevent the polishing agent E from chemically reacting with the etching liquid E as the etching liquid E remains on the semiconductor wafer W, and the upper surface of the semiconductor wafer W is affected.
因上述研磨體27所引起之加工半導體晶圓W時之此半導體晶圓W之厚度的變化可以上述厚度檢測感測器29檢測。又，因上述研磨體27所引起之半導體晶圓W之厚度的變化與設定於上述記憶部33之圖形P之時間tn的厚度bn比較。 The change in the thickness of the semiconductor wafer W when the semiconductor wafer W is processed by the polishing body 27 can be detected by the thickness detecting sensor 29. Further, the change in the thickness of the semiconductor wafer W caused by the polishing body 27 is compared with the thickness bn of the time tn set in the pattern P of the memory portion 33.
又，上述半導體晶圓W之厚度從bn+α形成為中斷以蝕刻液所作之蝕刻之時間tn之以上述圖形P設定的厚度bn時，結束以上述研磨體27所作之研磨加工。藉此，可防止以上述研磨體27過度研磨半導體晶圓W。 Further, when the thickness of the semiconductor wafer W is changed from bn+α to the thickness bn set by the pattern P at the time tn of etching by the etching liquid, the polishing process by the polishing body 27 is completed. Thereby, it is possible to prevent the semiconductor wafer W from being excessively polished by the polishing body 27.
如圖6B所示，當以上述研磨體27將上述半導體 晶圓W之上面加工成粗面r時，上述研磨體27從半導體晶圓W之上面退避後，以第2旋轉驅動源14搖動驅動上述第1臂21。與此同時，從第2噴嘴體26噴射洗淨液L預定時間，而從半導體晶圓W之上面洗淨去除研磨劑。 As shown in FIG. 6B, when the semiconductor is used as the above-described polishing body 27 When the upper surface of the wafer W is processed into the rough surface r, the polishing body 27 is retracted from the upper surface of the semiconductor wafer W, and then the first arm 21 is driven to be driven by the second rotation driving source 14. At the same time, the cleaning liquid L is ejected from the second nozzle body 26 for a predetermined period of time, and the polishing agent is removed from the upper surface of the semiconductor wafer W.
接著，從設於上述第1臂21之前端部之第1噴嘴體25將蝕刻液E噴射供給至半導體晶圓W之上面。此時，因半導體晶圓W之上面未殘留研磨劑，故可防止研磨劑與蝕刻液E起化學反應，半導體晶圓W之上面變質。 Next, the etching liquid E is ejected and supplied onto the upper surface of the semiconductor wafer W from the first nozzle body 25 provided at the end before the first arm 21. At this time, since the polishing agent does not remain on the upper surface of the semiconductor wafer W, it is possible to prevent the polishing agent from chemically reacting with the etching liquid E, and the upper surface of the semiconductor wafer W is deteriorated.
如此進行，可噴射供給蝕刻液E之半導體晶圓W 之上面以上述研磨體27加工成粗面r。亦即，由於因於半導體晶圓W之上面去除以例如有機物形成之膜，或上面之鏡面m之狀態加工成粗面r，蝕刻液E滯留於半導體晶圓W之上面，故可解除不以蝕刻液E進行半導體晶圓W之上面之蝕刻的狀態。 In this way, the semiconductor wafer W to which the etching liquid E is supplied can be ejected. The upper surface is processed into a rough surface r by the above-described polishing body 27. That is, since the film formed of, for example, an organic substance is removed from the upper surface of the semiconductor wafer W, or the surface of the mirror m is processed into a rough surface r, the etching liquid E stays on the upper surface of the semiconductor wafer W, so that it can be released. The etching liquid E is in a state of being etched on the upper surface of the semiconductor wafer W.
藉此，藉從上述第1噴嘴體25將蝕刻液E噴射供給 至半導體晶圓W之上面，蝕刻可進行。又，以上述厚度檢測感測器29檢測該蝕刻之進行狀態，一面與上述圖形P比較，一面進行蝕刻。 Thereby, the etching liquid E is ejected and supplied from the first nozzle body 25 described above. On top of the semiconductor wafer W, etching can be performed. Further, the thickness detecting sensor 29 detects the progress of the etching, and performs etching while being compared with the pattern P.
此外，在蝕刻之途中，如上述，以研磨體27加工半導體晶圓W之上面時，測定該加工所需之時間。又，於再開始研磨加工時，將修正加工所需之時間而測定之半導體晶圓W之厚度與上述圖形P所示之值比較。 Further, during the etching, as described above, when the upper surface of the semiconductor wafer W is processed by the polishing body 27, the time required for the processing is measured. Further, when the polishing process is resumed, the thickness of the semiconductor wafer W measured by the time required for the correction processing is compared with the value shown by the above-described pattern P.
如以上所述，若在蝕刻途中檢測出蝕刻未進行， 便於半導體晶圓W之上面以研磨體27加工成粗面r後，再開始蝕刻。 As described above, if the etching is not detected during the etching, After the upper surface of the semiconductor wafer W is processed into the rough surface r by the polishing body 27, etching is started.
因而，因於半導體晶圓W之上面未以蝕刻液E進 行蝕刻時，檢測此，而將上述半導體晶圓W之上面加工作易蝕刻之粗面r後，再開始蝕刻，故可確實地進行半導體晶圓W之蝕刻。 Therefore, since the upper surface of the semiconductor wafer W is not etched into the liquid E In the case of row etching, this is detected, and after the rough surface r of the semiconductor wafer W is applied and etched, the etching is started, so that the semiconductor wafer W can be surely etched.
在上述一實施形態中，舉了於杯體內設分隔體且將蝕刻液回收再使用之例來說明，每當使用蝕刻液，廢棄時，不需於上述杯體內設分隔體來回收已使用過之蝕刻液。 In the above-described embodiment, an example is described in which a separator is provided in the cup body and the etching liquid is collected and reused. When the etching liquid is used and discarded, it is not necessary to provide a separator in the cup body to recover the used one. Etching solution.
又，於第1臂設第1噴嘴，將研磨體設於第2臂，研磨體與第1及第2噴嘴一同設於第1臂亦無妨。 Further, the first nozzle is provided on the first arm, and the polishing body is provided on the second arm. The polishing body may be provided on the first arm together with the first and second nozzles.
以下，一面參照圖1~圖4及圖7A、圖7B、圖7C 及圖8，一面說明此發明之第2實施形態。此外，關於與上述第1實施形態之旋轉處理裝置相同之功能部份，省略說明。 Hereinafter, reference is made to FIGS. 1 to 4 and FIGS. 7A, 7B, and 7C. Fig. 8 shows a second embodiment of the invention. In addition, the description of the same functions as those of the above-described first embodiment of the rotation processing device will be omitted.
此外，本實施形態之旋轉處理裝置以將半導體晶 圓W加工成於外周部具有肋條部WL之形狀為目的。又，使用藥液(HF/HNO3)作為在本實施形態使用之蝕刻液E。 Further, the rotation processing apparatus of the present embodiment has an object of processing the semiconductor wafer W to have a shape of the rib portion WL at the outer peripheral portion. Further, a chemical solution (HF/HNO 3 ) was used as the etching solution E used in the present embodiment.
在本實施形態使用之研磨體27係於接觸上述半 導體晶圓W之板面之面設有砂紙。又，當上述第2臂22以上述第2旋轉驅動源14在預定角度範圍旋轉驅動時，上述研磨體27可在保持於上述旋轉台2之半導體晶圓W之上方如圖2箭號所示，搖動。 The polishing body 27 used in the present embodiment is in contact with the above-mentioned half Sandpaper is provided on the surface of the surface of the conductor wafer W. Further, when the second arm 22 is rotationally driven by the second rotation drive source 14 within a predetermined angle range, the polishing body 27 can be held above the semiconductor wafer W of the turntable 2 as indicated by an arrow in FIG. Shake.
因而，若一面使上述研磨體27搖動，一面以上述 氣缸28賦與往下降方向之勢能時，便以上述研磨體27將上述半導體晶圓W之上面加工成粗面。在此，粗面之粗度為後述藥液可充分停留之程度。 Therefore, when the polishing body 27 is shaken, the above-mentioned When the cylinder 28 is biased in the downward direction, the upper surface of the semiconductor wafer W is processed into a rough surface by the polishing body 27. Here, the thickness of the rough surface is such a degree that the chemical liquid described later can sufficiently stay.
在本實施形態使用之厚度檢測感測器29除了上 述雷射變位感測器外，尚可使用終點感測器等。 The thickness detecting sensor 29 used in this embodiment is in addition to In addition to the laser displacement sensor, an end point sensor or the like can be used.
此厚度檢測感測器29藉以上述第3旋轉驅動源15 如圖2以箭號所示，搖動來掃瞄，可檢測保持於上述旋轉台2之半導體晶圓W之厚度。亦即，如後述，可檢測業經以蝕刻液E所作之蝕刻之上述半導體晶圓W的厚度或以上述研磨體27加工成粗面之上述半導體晶圓W之厚度。 The thickness detecting sensor 29 is thereby driven by the third rotating driving source 15 As shown by an arrow in FIG. 2, the scan is shaken to detect the thickness of the semiconductor wafer W held on the turntable 2. That is, as will be described later, the thickness of the semiconductor wafer W etched by the etching liquid E or the thickness of the semiconductor wafer W processed into the rough surface by the polishing body 27 can be detected.
在此種旋轉處理裝置中，如下進行，而從圖7A 所示之圓板狀半導體晶圓W形成於圖7C所示之外周部具有肋條部WL之半導體晶圓W。即，使上述研磨體27作動，如圖7B所示，將半導體晶圓W之未形成肋條部之中心側WQ粗面化。 In such a rotation processing apparatus, it is performed as follows, and from FIG. 7A The disk-shaped semiconductor wafer W shown is formed on the semiconductor wafer W having the rib portion WL at the outer peripheral portion as shown in FIG. 7C. In other words, the polishing body 27 is actuated to roughen the center side WQ of the semiconductor wafer W where the rib portions are not formed, as shown in FIG. 7B.
接著，在以上述第1旋轉驅動源13將半導體晶圓W與旋轉台2一同旋轉驅動之狀態下，以上述第1旋轉驅動源13，搖動驅動第1臂21，並且，開放上述第1開關閥39，從設於上述第1臂21之前端部之第1噴嘴25對上述半導體晶圓W之上面噴射供給蝕刻液E。由於蝕刻液E停留於已粗面化之表面之凹處，故蝕刻亦不致因旋轉台2之旋轉而從上述半導體晶圓W飛散。因此，可促進蝕刻。 Then, in a state in which the semiconductor wafer W is rotationally driven together with the turntable 2 by the first rotary drive source 13, the first rotary drive source 13 is used to vertically drive the first arm 21, and the first switch is opened. The valve 39 sprays and supplies the etching liquid E onto the upper surface of the semiconductor wafer W from the first nozzle 25 provided at the end of the first arm 21. Since the etching solution E stays in the recess of the roughened surface, the etching does not scatter from the semiconductor wafer W due to the rotation of the turntable 2. Therefore, etching can be promoted.
又，在以上述厚度檢測感測器29檢測之上述半導體晶圓W之中心側WQ之厚度形成為預定厚度的時間點，上述輸 出部36關閉第1開關閥39，停止蝕刻液E之供給，而使蝕刻處理停止。接著，開啟第2開關閥42，從第2噴嘴體26將洗淨液L噴射供給至半導體晶圓W，藉此，可洗淨去除殘留於半導體晶圓W之蝕刻液E。 Further, at the time when the thickness of the center side WQ of the semiconductor wafer W detected by the thickness detecting sensor 29 is formed to a predetermined thickness, the above-described input The outlet portion 36 closes the first switching valve 39, stops the supply of the etching liquid E, and stops the etching process. Then, the second on-off valve 42 is opened, and the cleaning liquid L is ejected from the second nozzle body 26 to the semiconductor wafer W, whereby the etching liquid E remaining in the semiconductor wafer W can be washed and removed.
此外，在進行蝕刻之步驟中，亦可在半導體晶圓 W之中心側WQ之範圍，於厚度產生分佈時，重新使研磨體27作動，將剩餘厚度大之部份粗面化，促進蝕刻之進行，最後不致產生厚度分佈。 In addition, in the step of etching, it is also possible in the semiconductor wafer When the thickness is distributed in the WQ range of the center side of W, the polishing body 27 is re-actuated, and the portion having a large remaining thickness is roughened to promote the etching, and finally the thickness distribution is not generated.
如此，即使於半導體晶圓W之外周部設肋條部 WL時，亦不需研磨加工，而可以藥液所作之蝕刻以化學方式進行去除加工。因此，不對半導體晶圓W造成負擔，不需應力去除步驟，步驟單純化，生產性提高，製造成本降低。又，裂紋亦不致進入半導體晶圓W。 Thus, even if the rib portion is provided on the outer periphery of the semiconductor wafer W In the case of WL, the grinding process is not required, and the etching by the chemical liquid can be chemically removed. Therefore, the semiconductor wafer W is not burdened, the stress removal step is not required, the steps are simplistic, the productivity is improved, and the manufacturing cost is lowered. Also, cracks do not enter the semiconductor wafer W.
此外，圖8係示意地顯示本實施形態之變形例之 縱截面圖。在圖8，於與圖1相同之功能部份附上同一標號，而省略其詳細說明。圖8係將雷射光束加工設有雷射照射部27取代上述研磨體27者。如此，亦可以雷射光束加工，將半導體晶圓W之中心側WQ粗面化。 Further, Fig. 8 is a view schematically showing a modification of the embodiment. Longitudinal section. In FIG. 8, the same portions as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted. Fig. 8 shows a laser beam processing in which a laser irradiation unit 27 is provided instead of the above-described polishing body 27. In this manner, the laser beam processing can also be used to roughen the center side WQ of the semiconductor wafer W.
此外，研磨體27不限於砂紙或雷射光束，只要為 如切割器、噴丸、噴冰片、噴乾冰等般，將半導體晶圓W之板面適當地粗糙化成粗面者即可。 Further, the abrasive body 27 is not limited to a sandpaper or a laser beam, as long as For example, a cutter, a shot blasting, a blasting, a dry ice, or the like may be used to appropriately roughen the surface of the semiconductor wafer W into a rough surface.
此外，本發明非限於前述實施形態者。舉例言 之，蝕刻加工之基板舉了半導體晶圓為例來說明，對用於液晶顯示裝置等之玻璃基板取代半導體晶圓作為基板，進 行蝕刻加工時，亦可適用。又，使研磨體或厚度檢測感測器搖動而掃瞄，亦可為水平面之XY方向之掃瞄。此外，在不脫離本發明之要旨之範圍，當然可實施各種變形。 Further, the present invention is not limited to the above embodiments. Example The etched substrate is exemplified by a semiconductor wafer, and a semiconductor substrate for a liquid crystal display device or the like is used as a substrate instead of a semiconductor wafer. It can also be applied during the etching process. Further, the polishing body or the thickness detecting sensor may be scanned by shaking and may be scanned in the XY direction of the horizontal plane. Further, various modifications may be made without departing from the spirit and scope of the invention.
1‧‧‧杯體 1‧‧‧ cup body
2‧‧‧旋轉台 2‧‧‧Rotating table
2a‧‧‧保持銷 2a‧‧‧ Keep selling
3‧‧‧台用驅動源 3‧‧‧Site drive source
4‧‧‧分隔體 4‧‧‧Separator
4a‧‧‧傾斜壁 4a‧‧‧ sloping wall
5‧‧‧內側空間部 5‧‧‧Internal Space Department
6‧‧‧外側空間部 6‧‧‧Outside Space Department
7‧‧‧上下驅動源 7‧‧‧Up and down drive source
8‧‧‧第1廢液管 8‧‧‧1st waste pipe
9‧‧‧第2廢液管 9‧‧‧2nd waste pipe
11‧‧‧處理再生單元 11‧‧‧Processing regeneration unit
13‧‧‧第1旋轉驅動源 13‧‧‧1st rotary drive source
14‧‧‧第2旋轉驅動源 14‧‧‧2nd rotary drive source
15‧‧‧第3旋轉驅動源 15‧‧‧3rd rotary drive source
16‧‧‧第1軸體 16‧‧‧1st shaft
17‧‧‧第2軸體 17‧‧‧2nd axis
18‧‧‧第3軸體 18‧‧‧3rd axis
21‧‧‧第1臂 21‧‧‧1st arm
22‧‧‧第2臂 22‧‧‧2nd arm
23‧‧‧第3臂 23‧‧‧3rd arm
25‧‧‧第1噴嘴體 25‧‧‧1st nozzle body
26‧‧‧第2噴嘴體 26‧‧‧2nd nozzle body
27‧‧‧研磨體 27‧‧‧ grinding body
28‧‧‧氣缸 28‧‧‧ cylinder
29‧‧‧厚度檢測感測器 29‧‧‧ thickness detection sensor
E‧‧‧蝕刻液 E‧‧‧etching solution
L‧‧‧洗淨液 L‧‧‧ cleaning solution
W‧‧‧半導體晶圓 W‧‧‧Semiconductor Wafer
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| KR20160045299A (en) * | 2014-10-17 | 2016-04-27 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus, linked processing system and substrate processing method |
| KR101680214B1 (en) * | 2015-01-22 | 2016-11-28 | 주식회사 엘지실트론 | An apparatus of moving a wafer |
| JP7130524B2 (en) * | 2018-10-26 | 2022-09-05 | 東京エレクトロン株式会社 | CONTROLLER FOR SUBSTRATE PROCESSING APPARATUS AND CONTROL METHOD FOR SUBSTRATE PROCESSING APPARATUS |
| JP7273660B2 (en) | 2019-08-30 | 2023-05-15 | キオクシア株式会社 | Semiconductor manufacturing equipment and method for manufacturing semiconductor device |
| JP2022135022A (en) * | 2021-03-04 | 2022-09-15 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
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| JPS63256342A (en) * | 1987-04-10 | 1988-10-24 | Sumitomo Electric Ind Ltd | Method for grinding semiconductor wafer |
| JPH03265586A (en) * | 1990-03-15 | 1991-11-26 | Toshiba Corp | Production of aluminum nitride substrate |
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| TW201334055A (en) | 2013-08-16 |
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