CN105070673A - Substrate processing device and method - Google Patents
Substrate processing device and method Download PDFInfo
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- CN105070673A CN105070673A CN201510451334.5A CN201510451334A CN105070673A CN 105070673 A CN105070673 A CN 105070673A CN 201510451334 A CN201510451334 A CN 201510451334A CN 105070673 A CN105070673 A CN 105070673A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The invention provides a substrate processing device and method capable of etching faces of semi-conductor chips based on etching liquid. The substrate processing device is provided with a first nozzle supplying etching liquid to the plate face of the semi-conductor chip; a thickness detection sensor detecting thickness of the semi-conductor chip etched by the etching liquid; a control device interrupting etching based on the etching liquid when thickness of the semiconductor chip detected by the thickness detection sensor is abnormal; and a grinding body processing the plate face of the semiconductor chip to a rough face when the etching based on the etching liquid is interrupted.
Description
The application is the applying date is on December 26th, 2012, and application number is 201210574314.3, and invention and created name is the divisional application of the application of " processing unit of substrate and processing method ".
Technical field
The present invention relates to processing unit and the processing method of the substrate using the plate face of etching solution to substrates such as semiconductor wafers to etch.
Background technology
Such as, in the manufacturing process of semiconductor device, there will be a known the etching work procedure using oxide-film, nitride film or aluminium film etc. that the surface of etching solution removing semiconductor wafer is formed.
When the film that the surface by etching solution removing semiconductor wafer is formed, in order to the thickness making its thickness become set, in the past by carrying out etching and processing with the time preset or while detect the thickness of above-mentioned semiconductor wafer while carry out etching and processing with film thickness sensor, above-mentioned semiconductor wafer etch being worked into desired thickness.
And, according to the process in rear operation, sometimes need to form rib shape etc. at peripheral part, manufacture the semiconductor wafer having bottom tube-like.In order to form rib shape at peripheral part, by grinder etc., grinding is carried out to the central side of semiconductor wafer, thus remove the part outside perimembranous except for the outer.In addition, after grinding, in order to carry out wet etching except destressing.
Patent documentation 1: Japanese Unexamined Patent Publication 2002-319562 publication
But the surface attachment that there is the film formed on above-mentioned semiconductor wafer has the organic situation that cannot be etched by normally used etching solution, and under these circumstances, organic film becomes mask and makes etching be in progress sometimes.
In addition, above-mentioned semiconductor wafer in operation, sometimes such as carries out mirror finish by CMP (ChemicalMechanicalPolishing: chemico-mechanical polishing) before being transported to etching work procedure.Carried out the face of the semiconductor wafer of mirror finish, i.e. minute surface become etching solution be difficult to act on state.Therefore, under these circumstances also, sometimes also cannot be in progress based on the etching of etching solution.
And, when making the etching of semiconductor wafer be in progress due to above-mentioned reason etc., above-mentioned semiconductor wafer etch can not be processed into desired thickness.
And, when by grinding by central side grinding, need to adhere to adhesion zone at the back side of semiconductor wafer, so need to paste, peel off the operation of adhesion zone before and after grinding.In addition, need above-mentioned stress removal step or matting as additional operation and make complex procedures, therefore there is the problems such as productivity ratio reduction.In addition, although the working (machining) efficiency of grinding is high, sometimes make semiconductor wafer crack, process velocity can not be made to be certain above problem so also exist.
Summary of the invention
A kind ofly on the plate face of substrate, processing unit and the processing method that organic film or above-mentioned plate face are minute surface etc., also by etching solution, aforesaid substrate reliably can be etched into the substrate of desired thickness is formed with even if the invention provides.
And, the invention provides and a kind ofly can reduce treatment process, by operation being simplified the processing unit and processing method that realize the substrate that productivity ratio improves by not using grinding process when manufacturing and there is the semiconductor wafer of external circumferential ribs shape.
The present invention is the processing unit of substrate, is etched, it is characterized in that possessing: etching solution feed mechanism by the plate face of etching solution to substrate, to the plate face supply etching solution of aforesaid substrate; Thickness detection mechanism, detects the thickness of the aforesaid substrate etched by above-mentioned etching solution; Controlling organization, when the thickness of the aforesaid substrate detected by this thickness detection mechanism is abnormal, makes the etching based on above-mentioned etching solution interrupt; And organisation of working, when the etching based on above-mentioned etching solution is interrupted, matsurface is processed in the plate face of aforesaid substrate.
The present invention is the processing method of substrate, is etched, it is characterized in that possessing by the plate face of etching solution to substrate: to the operation of the plate face supply etching solution of aforesaid substrate; When the varied in thickness of the aforesaid substrate based on above-mentioned etching is abnormal, make the operation that the etching based on above-mentioned etching solution is interrupted; And when having interrupted above-mentioned etching, after matsurface is processed in the plate face of aforesaid substrate, again start the operation etched.
Invention effect
According to the present invention, by judging whether substrate thickness when etching changes, and judges whether substrate is etched, when not etching, interrupting etching, after matsurface is processed in the plate face of aforesaid substrate, again starts etching.
Therefore, by matsurface is processed in the plate face of aforesaid substrate, organic film that can remove the reason of the etching progress as obstruction substrate, that such as formed on the plate face of substrate, the state that etching solution can be made to be difficult to the minute surface acted on becomes the matsurface of easily effect, so aforesaid substrate reliably can be etched into desired thickness.
Accompanying drawing explanation
Fig. 1 is the skeleton diagram of the spin processing unit representing the first execution mode of the present invention.
Fig. 2 is the vertical view of the spin processing unit shown in Fig. 1.
Fig. 3 is the piping diagram of etching solution, cleaning fluid and compression system.
Fig. 4 is the structure chart to the control device that the first to the 3rd open and close valve set in the piping diagram shown in Fig. 3 controls.
Fig. 5 is the curve chart of the varied in thickness of semiconductor wafer when representing etching and the relation of time.
Fig. 6 A is the enlarged drawing of a part for the semiconductor wafer representing that etched is minute surface.
Fig. 6 B represents etched the enlarged drawing being processed to a part for the semiconductor wafer of matsurface from minute surface.
Fig. 7 A schematically shows the longitudinal section that the spin processing unit using the second execution mode of the present invention to relate to carries out the semiconductor wafer in the process processed.
Fig. 7 B is the longitudinal section schematically showing this semiconductor wafer.
Fig. 7 C is the longitudinal section schematically showing this semiconductor wafer.
Fig. 8 is the longitudinal section of the variation schematically showing this spin processing unit.
Description of symbols
2 ... rotary table, 3 ... workbench drive source, 13 ... first rotary driving source, 14 ... second rotary driving source, 15 ... 3rd rotary driving source, 21 ... first arm, 22 ... second arm, 23 ... 3rd arm, 25 ... first jet body, 26 ... second nozzle body, 27 ... abrasive body (organisation of working), 27A ... laser irradiating part (organisation of working), 28 ... cylinder (organisation of working), 29 ... thickness detecting sensor (thickness detection mechanism), 30 ... feed mechanism, 31 ... controlling organization, 33 ... storage part, 34 ... comparing section, 35 ... judging part, 36 ... efferent.
Embodiment
Below, with reference to accompanying drawing, the first execution mode of the present invention is described.
Fig. 1 and Fig. 2 illustrates the spin processing unit as processing unit, and this spin processing unit possesses cup 1.The inside of this cup 1 is provided with rotary table 2.This rotary table 2 is driven in rotation by workbench drive source 3, on the upper surface of rotary table 2, is held in level and can dismounting as the semiconductor wafer W of substrate by multiple retaining pin 2a.That is, above-mentioned semiconductor wafer W with this rotary table 2 integrally rotatably mode be maintained on above-mentioned rotary table 2.
As shown in Figure 1, be provided with the spacer body 4 of the tubular its inside being divided into inner space portion 5 and outer space portion 6 in the inside of above-mentioned cup 1, this spacer body 4 is driven along the vertical direction by multiple upper and lower drive source 7.
When above-mentioned spacer body 4 is in lifting position, as described later, upper surface to the above-mentioned semiconductor wafer W rotated together with above-mentioned rotary table 2 supplies and the etching solution E dispersed towards periphery due to centrifugal force, collides the inner peripheral surface of above-mentioned spacer body 4 and drips to above-mentioned inner space portion 5.
As shown in Figure 1, when above-mentioned spacer body 4 is in down position, the upper end of the inclined wall 4a that the upper end of this spacer body 4 is formed is located in the position lower a little than the upper surface of above-mentioned semiconductor wafer W.Thus, as described later, to rotate above-mentioned semiconductor wafer W upper surface supply and the cleaning fluid L dispersed towards periphery due to centrifugal force drip to above-mentioned outer space portion 6.
The position corresponding with above-mentioned inner space portion 5 bottom above-mentioned cup 1 is connected with the first sewer pipe 8, is connected with the second sewer pipe 9 at the position corresponding with above-mentioned outer space portion 6.In above-mentioned first sewer pipe 8, the above-mentioned etching solution E of flowing is imported into process regeneration unit 11 and is cleaned, and is easily reused as described later.Go out of use after the cleaning fluid L be directed in above-mentioned second sewer pipe 9 is cleaned process.
As depicted in figs. 1 and 2, the first rotary driving source 13, second rotary driving source 14 and the 3rd rotary driving source 15 is had in the exterior arrangement of above-mentioned cup 1.Each drive source 13,14,15 is vertically provided with each drive source 13,14,15 and the first axle body 16, the second axle body 17 and the three-axis body 18 that are driven in rotation respectively.
Link also level in the upper end of above-mentioned the first axle body 16 and maintain the cardinal extremity of the first arm 21, link also level in the upper end of above-mentioned the second axle body 17 and maintain the cardinal extremity of the second arm 22.Link also level in the upper end of three-axis body 18 and maintain the cardinal extremity of the 3rd arm 23.
The second nozzle body 26 of the first jet body 25 of etching solution and the pure water as cleaning fluid is provided with at the leading section of above-mentioned first arm 21.And, when above-mentioned first arm 21 is driven in rotation in the angular range specified by above-mentioned first rotary driving source 13, radially swing like that as shown by the arrows in Figure 2 above the semiconductor wafer W that above-mentioned first jet body 25 and above-mentioned second nozzle body 26 keep at above-mentioned rotary table 2.
At the leading section of above-mentioned second arm 22, be provided with the abrasive body 27 of plate-like in the mode that can be driven along the vertical direction by cylinder 28, the upper surface that this abrasive body 27 is the semiconductor wafer W kept by above-mentioned rotary table 2 is processed into the organisation of working of matsurface.
Above-mentioned abrasive body 27 is the face contacted with the plate face of above-mentioned semiconductor wafer W being provided with compared with the cloth base material of use when the plate face of above-mentioned semiconductor wafer W being carried out mirror finish mesh more greatly and harder cloth base material.And, when above-mentioned second arm 22 is driven in rotation in the angular range specified by above-mentioned second rotary driving source 14, swing like that as shown by the arrows in Figure 2 above the semiconductor wafer W that above-mentioned abrasive body 27 keeps at above-mentioned rotary table 2.
Therefore, if while above-mentioned abrasive body 27 is swung by above-mentioned cylinder 28 to this abrasive body 27 to descent direction force, then by above-mentioned abrasive body 27, the upper surface of above-mentioned semiconductor wafer W is not by mirror finish but be processed to the matsurface more coarse than minute surface.
In addition, as above-mentioned abrasive body 27, being not limited to the cloth base material using mesh large and hard, also can be the material etc. that the abrasive particle making particle diameter larger is attached on cloth base material, in a word, as long as can by coarse for the plate face of the semiconductor wafer W material being processed into matsurface.
The thickness detecting sensor 29 as thickness detection mechanism of the thickness detecting above-mentioned semiconductor wafer W is provided with at the leading section of above-mentioned 3rd arm 23.This thickness detection mechanism is such as laser displacement sensor.This thickness detecting sensor 29, by making above-mentioned 3rd arm 23 swing like that as shown by the arrows in Figure 2 by above-mentioned 3rd rotary driving source 15 and scanning, detects the thickness of the semiconductor wafer W that above-mentioned rotary table 2 keeps thus.Namely as described later, the thickness of the above-mentioned semiconductor wafer W that be etched by etching solution E can be detected, be processed into the thickness of the above-mentioned semiconductor wafer W of matsurface by above-mentioned abrasive body 27.
As shown in Figure 4, the detection signal of above-mentioned thickness detecting sensor 29 is output to control device 31.Control device 31 is connected with configuration part 32, by the storage part 33 that this configuration part 32 is built-in in above-mentioned control device 31 as shown in Figure 5 setting represent the figure P based on the etching period of above-mentioned semiconductor wafer W of etching solution and the linearity of the relation of thickness under normal condition.This figure P represents the set point of etch quantity relative to etching period.
In addition, the angle of inclination of figure P is different because of the performance of the concentration or kind etc. of etching solution E.
When starting the etching of semiconductor wafer W by etching solution E, the change of the thickness b of the above-mentioned semiconductor wafer W detected by above-mentioned thickness detecting sensor 29 is output to comparing section 34.Whenever being etching through the stipulated time, in this comparing section 34, above-mentioned figure P set in the thickness b of the above-mentioned semiconductor wafer W detected by above-mentioned thickness detecting sensor 29 in this time and above-mentioned storage part 33 is compared.
And, when the change of the thickness b of the above-mentioned semiconductor wafer W detected by above-mentioned thickness detecting sensor 29 offsets more than prescribed limit relative to above-mentioned figure P, as shown in Figure 5, if such as at time tn, be bn at the thickness of figure P semiconductor wafer W, in contrast, this thickness is bn+ α in measured value, then by judging part 35, this situation is judged, and judged that signal outputs to efferent 36.
As shown in Figure 3 and Figure 4, above-mentioned efferent 36 exports for driving above-mentioned workbench drive source 3, first to the drive singal of the 3rd rotary driving source 13 ~ 15.In addition, above-mentioned efferent 36 exports the drive singal being used for opening and closing first open and close valve 39, second open and close valve 42 and the 3rd open and close valve 44, this first open and close valve 39 is arranged on and supplies on first feed pipe 38 of etching solution E to above-mentioned first jet body 25, this second open and close valve 42 is arranged on and supplies on second feed pipe 41 of cleaning fluid L to above-mentioned second nozzle body 26, and the 3rd open and close valve 44 is arranged on and supplies on the air supply pipe 43 of gas-pressurized A above-mentioned cylinder 28.
Supply etching solution E from above-mentioned process regeneration unit 11 to above-mentioned first feed pipe 38, the supply source of never illustrated cleaning fluid L supplies cleaning fluid L to above-mentioned second feed pipe 41, supplies gas-pressurized A by not shown air supply source to above-mentioned air supply pipe 43.
When carrying out etching and processing to above-mentioned semiconductor wafer W, under the state making semiconductor wafer W rotary actuation together with rotary table 2 by above-mentioned first rotary driving source 13, by above-mentioned first rotary driving source 13 wobble drive first arm 21, and above-mentioned first open and close valve 39 is opened, from the first jet body 25 set by the leading section of above-mentioned first arm 21, supply etching solution E is sprayed to the upper surface of above-mentioned semiconductor wafer W.Thus, above-mentioned semiconductor wafer W is etched.
By being arranged on the leading section of the 3rd arm 23 and the thickness detecting sensor 29 be positioned above above-mentioned semiconductor wafer W, detect the state of progress of the etching of above-mentioned semiconductor wafer W.The varied in thickness of the above-mentioned semiconductor wafer W detected by thickness detecting sensor 29 be expression set in comparing section 34 and above-mentioned storage part 33 specify etching time time and varied in thickness between the figure P of relation compare, this comparative result is that judging part 35 compared judgement by such as every several seconds per stipulated time.
The upper surface being supplied to etching solution E of above-mentioned semiconductor wafer W is formed organic film or in front operation, this upper surface is processed to minute surface m as shown in figure 6 a, as described above, there is the situation making slow progress based on the etching of etching solution E or be not in progress compared with above-mentioned figure P of the upper surface of above-mentioned semiconductor wafer W.This is because, the surface that etching solution E does not rest on semiconductor wafer W is discharged at once, thus is in the state that the etch processes based on etching solution E is not in progress.
In this case, the comparative result of above-mentioned judging part 35 be judged as the thickness of semiconductor wafer W relative to above-mentioned figure P Yan Genghou.And, when above-mentioned figure P is more than ormal weight with the side-play amount of the thickness of the semiconductor wafer W measured, this situation is outputted to efferent 36.
Thus, when being judged as that the thickness of semiconductor wafer W does not change, above-mentioned efferent 36 closes the supply of the first open and close valve 39 and the liquid E that stops etching, temporarily stop etching process, open the second open and close valve 42 afterwards and spray supply cleaning fluid L from second nozzle body 26 to semiconductor wafer W, thus in cleaning removing semiconductor wafer W the etching solution E that remains.
If the cleaning fluid L spraying the stipulated time from above-mentioned second nozzle body 26 has cleaned the upper surface of above-mentioned semiconductor wafer W, after then supplying the grinding agent such as slurry or grounds travel by feed mechanism 30 to the upper surface of above-mentioned semiconductor wafer W, by the second rotary driving source 14 wobble drive second arm 22.
Meanwhile, drive by being opened by the 3rd open and close valve 44 set on above-mentioned air supply pipe 43 from the signal of above-mentioned efferent 36 cylinder 28 arranged at the leading section of above-mentioned second arm 22.Abrasive body 27 is made to be held in rotary table 2 and to carry out pushing processing with the stipulated time to this upper surface while the upper surface of the semiconductor wafer W be driven in rotation swings by this cylinder 28.
Thus, the matsurface r that is processed to as shown in fig. 6b via above-mentioned grinding agent and by the large and hard cloth base material of mesh set on above-mentioned abrasive body 27 of the upper surface of above-mentioned semiconductor wafer W.Before the upper surface supply grinding agent to above-mentioned semiconductor wafer W, the upper surface being cleaned above-mentioned semiconductor wafer W by cleaning fluid L cleans removing etching solution E.Therefore, can prevent, grinding agent such when the upper surface of semiconductor wafer W remains etching solution E and etching solution E from chemical reaction occurring and makes the affected situation of the upper surface of semiconductor wafer W.
The varied in thickness of this semiconductor wafer W during above-mentioned abrasive body 27 processing semiconductor wafer W is detected by above-mentioned thickness detecting sensor 29.And, by comparing at the thickness bn of time tn of figure P set in the varied in thickness of the semiconductor wafer W based on above-mentioned abrasive body 27 and above-mentioned storage part 33.
And during the thickness bn set by above-mentioned figure P when the thickness of above-mentioned semiconductor wafer W is turned into from bn+ α the time tn interrupted based on the etching of etching solution E, the attrition process based on above-mentioned abrasive body 27 terminates.Thus, can prevent by above-mentioned abrasive body 27 overmastication semiconductor wafer W.
When the upper surface of above-mentioned semiconductor wafer W is processed into matsurface r as shown in fig. 6b by above-mentioned abrasive body 27, at above-mentioned abrasive body 27 from after the upper surface of semiconductor wafer W is kept out of the way, above-mentioned first arm 21 is by the second rotary driving source 14 wobble drive.Meanwhile, from second nozzle body 26 with stipulated time jet cleaning liquid L, from the upper surface cleaning removing grinding agent of semiconductor wafer W.
Then, supply etching solution E is sprayed from the first jet body 25 set by the leading section of above-mentioned first arm 21 to the upper surface of semiconductor wafer W.Now, there is no residual abrasive at the upper surface of semiconductor wafer W, so can prevent grinding agent and etching solution E from chemical reaction occurring and make the upper surface of semiconductor wafer W go bad.
Like this, the upper surface of the semiconductor wafer W of injected supply etching solution E is processed to matsurface r by above-mentioned abrasive body 27.Namely, on the upper surface of semiconductor wafer W, by removing the film that such as formed by organic substance or the state of the minute surface m of upper surface being processed into matsurface r, etching solution E is trapped in the upper surface of semiconductor wafer W thus, because this eliminating the state be not in progress by the etching of etching solution E to the upper surface of semiconductor wafer W.
Thus, by spraying supply etching solution E from above-mentioned first jet body 25 to the upper surface of semiconductor wafer W, etching is in progress.And, detected the state of progress of this etching by above-mentioned thickness detecting sensor 29, compare while etch with above-mentioned figure P.
In addition, in etching way, as described above when machined the upper surface of semiconductor wafer W by abrasive body 27, the time that this machining needs is measured.And, when again starting attrition process, compare the thickness of the semiconductor wafer W measured after revising the time of machining needs and the value shown by above-mentioned figure P.
As described above, if detect that etching is not in progress in etching way, be then polished after body 27 is processed into matsurface r at the upper surface of semiconductor wafer W and again start etching.
Therefore, when the upper surface of semiconductor wafer W is not in progress by the etching of etching solution E, this situation detected and after the upper surface of above-mentioned semiconductor wafer W being processed into the matsurface r of easily etching, again start etching, so the etching of semiconductor wafer W reliably can be carried out.
In an above-mentioned execution mode, enumerate and arrange spacer body to reclaim and the example re-using etching solution is illustrated in cup, but discarded after each use etching solution, do not need, spacer body is set in above-mentioned cup used etching solution is reclaimed.
And, first jet is arranged on the first arm, abrasive body is arranged on the second arm, but to be arranged on together with first, second nozzle by abrasive body the first arm is also no problem.
Below, with reference to Fig. 1 ~ Fig. 4 and Fig. 7 A, 7B, 7C, Fig. 8, the second execution mode of the present invention is described.In addition, the funtion part identical with the spin processing unit in the first above-mentioned execution mode is omitted the description.
In addition, the object of the spin processing unit of present embodiment is semiconductor wafer W to be processed into the shape at peripheral part with flank WL.And, use liquid (HF/HNO as the etching solution E used in present embodiment
3).
The abrasive body 27 used in the present embodiment is provided with sand paper on the face contacted with the plate face of above-mentioned semiconductor wafer W.And, when above-mentioned second arm 22 is driven in rotation within the scope of predetermined angular by above-mentioned second rotary driving source 14, swing like that as shown by the arrows in Figure 2 above the semiconductor wafer W that above-mentioned abrasive body 27 keeps at above-mentioned rotary table 2.
Therefore, if exerted a force to descent direction to this abrasive body 27 by above-mentioned cylinder 28 while making above-mentioned abrasive body 27 swing, then by above-mentioned abrasive body 27, the upper surface of above-mentioned semiconductor wafer W is processed into matsurface.At this, the roughness of matsurface is the degree that liquid described later can fully stop.
The thickness detecting sensor 29 used in present embodiment, except using above-mentioned laser displacement sensor, goes back use side point sensor (endpointsensor) etc.
This thickness detecting sensor 29, by making above-mentioned 3rd arm 23 swing like that as shown by the arrows in Figure 2 by above-mentioned 3rd rotary driving source 15 and scanning, detects the thickness of the semiconductor wafer W that above-mentioned rotary table 2 keeps thus.Namely as described later, the thickness of the above-mentioned semiconductor wafer W that be etched by etching solution E can be detected, be processed into the thickness of the above-mentioned semiconductor wafer W of matsurface by above-mentioned abrasive body 27.
By such spin processing unit, as described below, form the semiconductor wafer W at peripheral part with flank WL shown in Fig. 7 C from the discoideus semiconductor wafer W shown in Fig. 7 A.That is, make the action of above-mentioned abrasive body 27, as shown in Figure 7 B, make the central side WQ roughening of the flank not forming semiconductor wafer W.
Then, by above-mentioned first rotary driving source 13 by under the state of semiconductor wafer W rotary actuation together with rotary table 2, first arm 21 by above-mentioned first rotary driving source 13 by wobble drive, and, above-mentioned first open and close valve 39 is opened, and sprays supply etching solution E from the first jet body 25 set by the leading section of above-mentioned first arm 21 to the upper surface of above-mentioned semiconductor wafer W.Etching solution E rests in the pit on the surface be roughened, even if so rotary table 2 rotates, etching solution E also can not disperse from above-mentioned semiconductor wafer W.Therefore, etching is facilitated.
And when the thickness of the central side WQ of the above-mentioned semiconductor wafer W detected by above-mentioned thickness detecting sensor 29 becomes the moment of specific thickness, above-mentioned efferent 36 closes the supply of the first open and close valve 39 and the liquid E that stops etching, thus the process that stops etching.Then, open the second open and close valve 42 and spray supply cleaning fluid L from second nozzle body 26 to semiconductor wafer W, thus in cleaning removing semiconductor wafer W the etching solution E that remains.
In addition, carrying out in the operation etched, in the scope of the central side WQ of semiconductor wafer W, when thickness creates difference, also again can make abrasive body 27 action, part roughening larger for residual thickness be promoted the progress etched, finally can not produce thickness difference.
Like this, though when the peripheral part of semiconductor wafer W arrange flank WL such, also do not need grinding, can by based on liquid be etched with chemical mode carry out removing process.Therefore, burden can not be applied to semiconductor wafer W, not need stress removal step, operation can be simplified, boost productivity, reduce manufacturing cost.And, also can not crack in semiconductor wafer W.
In addition, Fig. 8 is the longitudinal section schematically showing modified embodiment of the present embodiment.In fig. 8, also description is omitted to give same tag to the funtion part identical with Fig. 1.In Fig. 8, replace above-mentioned abrasive body 27 and the laser irradiating part 27A be provided with for carrying out laser beam processing.Like this, the central side WQ roughening of semiconductor wafer W also can be made by laser beam processing.
In addition, as abrasive body 27, being not limited to sand paper or laser beam, also can be as cutting machine, compressed air shotblasting machine, borneol spraying machine, dry ice blasting machine etc. can by the plate face of the semiconductor wafer W suitably coarse devices being processed into matsurface.
In addition, the present invention is not limited to above-mentioned execution mode.Such as, as the substrate of etching and processing, enumerate semiconductor wafer for example and being illustrated, but also can be applied to following situation: as substrate, replace semiconductor wafer and etching and processing is carried out to the glass substrate used in liquid crystal indicator etc.And, make abrasive body, thickness detecting sensor carry out swinging type scanning, but it also can be made to carry out the scanning in the XY direction along the horizontal plane.In addition, certainly can carry out various distortion without departing from the spirit and scope of the invention to implement.
Claims (3)
1. a processing unit for substrate, is etched by the plate face of etching solution to substrate, it is characterized in that possessing:
Organisation of working, is processed into matsurface by the plate face of the aforesaid substrate after having carried out mirror finish by preprocessing to plate face; And
Etching solution feed mechanism, to the above-mentioned plate face supply etching solution under the state being processed into matsurface by above-mentioned organisation of working.
2. the processing unit of substrate as claimed in claim 1, is characterized in that,
Have rotary table, this rotary table keeps aforesaid substrate on an upper and carries out rotary actuation to aforesaid substrate;
Above-mentioned etching solution feed mechanism possesses:
Swing arm, rotary actuation is carried out in the source of being driven in rotation; And
Nozzle body, is arranged on the front end of this swing arm, and above-mentioned swing arm is by being swung in the horizontal direction above aforesaid substrate by carrying out rotary actuation, and this nozzle body sprays above-mentioned etching solution to aforesaid substrate.
3. a processing method for substrate, is etched by the plate face of etching solution to substrate, it is characterized in that possessing:
The plate face of the aforesaid substrate after having carried out mirror finish by preprocessing to plate face is processed into the operation of matsurface; And
To the operation of the above-mentioned plate face supply etching solution under the state being processed to above-mentioned matsurface.
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| JP2011285877 | 2011-12-27 | ||
| JP2011-285877 | 2011-12-27 | ||
| JP2012-263347 | 2012-11-30 | ||
| JP2012263347A JP6091193B2 (en) | 2011-12-27 | 2012-11-30 | Substrate processing apparatus and processing method |
| CN201210574314.3A CN103187341B (en) | 2011-12-27 | 2012-12-26 | The processing unit of substrate and processing method |
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| CN201210574314.3A Division CN103187341B (en) | 2011-12-27 | 2012-12-26 | The processing unit of substrate and processing method |
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| JP (2) | JP6091193B2 (en) |
| KR (1) | KR101432009B1 (en) |
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| CN111106035A (en) * | 2018-10-26 | 2020-05-05 | 东京毅力科创株式会社 | Control device for substrate processing apparatus and control method for substrate processing apparatus |
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| JP6289961B2 (en) * | 2014-03-27 | 2018-03-07 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
| KR20160045299A (en) * | 2014-10-17 | 2016-04-27 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus, linked processing system and substrate processing method |
| KR101680214B1 (en) * | 2015-01-22 | 2016-11-28 | 주식회사 엘지실트론 | An apparatus of moving a wafer |
| DE102017212887A1 (en) | 2017-07-26 | 2019-01-31 | Gebr. Schmid Gmbh | Method, device and system for printed circuit board production |
| JP7273660B2 (en) | 2019-08-30 | 2023-05-15 | キオクシア株式会社 | Semiconductor manufacturing equipment and method for manufacturing semiconductor device |
| JP2022135022A (en) * | 2021-03-04 | 2022-09-15 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
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Also Published As
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| TW201535506A (en) | 2015-09-16 |
| TWI601202B (en) | 2017-10-01 |
| JP2017085174A (en) | 2017-05-18 |
| JP2013153141A (en) | 2013-08-08 |
| KR101432009B1 (en) | 2014-08-20 |
| JP6321234B2 (en) | 2018-05-09 |
| JP6091193B2 (en) | 2017-03-08 |
| KR20140024948A (en) | 2014-03-03 |
| TW201334055A (en) | 2013-08-16 |
| TWI494992B (en) | 2015-08-01 |
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