TWI470735B - 絕緣層上覆矽（ｓｏｉ）基板之製造方法 - Google Patents

絕緣層上覆矽（ｓｏｉ）基板之製造方法 Download PDF

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Publication number
TWI470735B
TWI470735B TW97141660A TW97141660A TWI470735B TW I470735 B TWI470735 B TW I470735B TW 97141660 A TW97141660 A TW 97141660A TW 97141660 A TW97141660 A TW 97141660A TW I470735 B TWI470735 B TW I470735B
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TW
Taiwan
Prior art keywords
substrate
nitrogen
layer
semiconductor
containing layer
Prior art date
Application number
TW97141660A
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English (en)
Chinese (zh)
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TW200943477A (en
Inventor
掛端哲彌
栗城和貴
Original Assignee
半導體能源研究所股份有限公司
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Publication of TW200943477A publication Critical patent/TW200943477A/zh
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Publication of TWI470735B publication Critical patent/TWI470735B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
TW97141660A 2007-10-31 2008-10-29 絕緣層上覆矽（ｓｏｉ）基板之製造方法 TWI470735B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007283669 2007-10-31

Publications (2)

Publication Number Publication Date
TW200943477A TW200943477A (en) 2009-10-16
TWI470735B true TWI470735B (zh) 2015-01-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW97141660A TWI470735B (zh) 2007-10-31 2008-10-29 絕緣層上覆矽（ｓｏｉ）基板之製造方法

Country Status (5)

Country Link
US (3) US7696058B2 (https=)
JP (1) JP5542256B2 (https=)
KR (1) KR101497353B1 (https=)
CN (1) CN101425454B (https=)
TW (1) TWI470735B (https=)

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JP2009141093A (ja) 2007-12-06 2009-06-25 Toshiba Corp 発光素子及び発光素子の製造方法
JP5548395B2 (ja) * 2008-06-25 2014-07-16 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5663150B2 (ja) * 2008-07-22 2015-02-04 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
KR20120059509A (ko) * 2009-08-25 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2011077504A (ja) * 2009-09-02 2011-04-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US8655138B2 (en) 2010-05-10 2014-02-18 Cornell University Waveguide structure and related fabrication method
JP5917036B2 (ja) 2010-08-05 2016-05-11 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US9269582B2 (en) * 2011-03-24 2016-02-23 Entegris, Inc. Cluster ion implantation of arsenic and phosphorus
FR2975222A1 (fr) * 2011-05-10 2012-11-16 Soitec Silicon On Insulator Procede de fabrication d'un substrat semiconducteur
JP6016532B2 (ja) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 半導体装置
US8575666B2 (en) * 2011-09-30 2013-11-05 Raytheon Company Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductor
JP2016511934A (ja) * 2013-01-16 2016-04-21 キューマット インコーポレイテッドＱｍａｔ， Ｉｎｃ． 光電子デバイスを形成する技術
KR20150056316A (ko) * 2013-11-15 2015-05-26 삼성디스플레이 주식회사 소자 기판 제조 방법 및 상기 방법을 이용하여 제조한 표시 장치
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
WO2016081367A1 (en) 2014-11-18 2016-05-26 Sunedison Semiconductor Limited HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION
JP6749394B2 (ja) * 2015-11-20 2020-09-02 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 滑らかな半導体表面の製造方法
SG11201913769RA (en) * 2017-07-14 2020-01-30 Sunedison Semiconductor Ltd Method of manufacture of a semiconductor on insulator structure
WO2020092647A1 (en) 2018-10-30 2020-05-07 North Carolina State University Torque ripple reduction in ac machines
US11527701B2 (en) * 2019-10-28 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric device and method of forming the same
CN112885713A (zh) * 2021-01-29 2021-06-01 合肥维信诺科技有限公司 改善膜质的方法和显示面板

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Also Published As

Publication number Publication date
KR20090045130A (ko) 2009-05-07
US20100120225A1 (en) 2010-05-13
US7696058B2 (en) 2010-04-13
US9837300B2 (en) 2017-12-05
TW200943477A (en) 2009-10-16
CN101425454B (zh) 2014-11-05
US20120282757A1 (en) 2012-11-08
KR101497353B1 (ko) 2015-03-02
JP2009135465A (ja) 2009-06-18
JP5542256B2 (ja) 2014-07-09
US20090111236A1 (en) 2009-04-30
CN101425454A (zh) 2009-05-06
US8207045B2 (en) 2012-06-26

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