TWI466929B - 聚矽氮烷處理溶劑及用此溶劑之聚矽氮烷之處理方法 - Google Patents
聚矽氮烷處理溶劑及用此溶劑之聚矽氮烷之處理方法 Download PDFInfo
- Publication number
- TWI466929B TWI466929B TW95103289A TW95103289A TWI466929B TW I466929 B TWI466929 B TW I466929B TW 95103289 A TW95103289 A TW 95103289A TW 95103289 A TW95103289 A TW 95103289A TW I466929 B TWI466929 B TW I466929B
- Authority
- TW
- Taiwan
- Prior art keywords
- solvent
- polyazane
- treatment
- polyazide
- substrate
- Prior art date
Links
- 239000002904 solvent Substances 0.000 title claims description 111
- 238000000034 method Methods 0.000 title claims description 29
- 229920001709 polysilazane Polymers 0.000 title 2
- 239000011248 coating agent Substances 0.000 claims description 49
- 238000000576 coating method Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 48
- 239000000203 mixture Substances 0.000 claims description 26
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 claims description 20
- GRWFGVWFFZKLTI-IUCAKERBSA-N (-)-α-pinene Chemical compound CC1=CC[C@@H]2C(C)(C)[C@H]1C2 GRWFGVWFFZKLTI-IUCAKERBSA-N 0.000 claims description 16
- -1 p- Alkane Chemical compound 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 15
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 claims description 14
- MVNCAPSFBDBCGF-UHFFFAOYSA-N alpha-pinene Natural products CC1=CCC23C1CC2C3(C)C MVNCAPSFBDBCGF-UHFFFAOYSA-N 0.000 claims description 8
- GRWFGVWFFZKLTI-UHFFFAOYSA-N rac-alpha-Pinene Natural products CC1=CCC2C(C)(C)C1C2 GRWFGVWFFZKLTI-UHFFFAOYSA-N 0.000 claims description 8
- 239000010419 fine particle Substances 0.000 claims description 7
- 229930195733 hydrocarbon Natural products 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 6
- 239000011859 microparticle Substances 0.000 claims description 5
- YTZKOQUCBOVLHL-UHFFFAOYSA-N p-methylisopropylbenzene Natural products CC(C)(C)C1=CC=CC=C1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 claims description 5
- WEEGYLXZBRQIMU-UHFFFAOYSA-N Eucalyptol Chemical compound C1CC2CCC1(C)OC2(C)C WEEGYLXZBRQIMU-UHFFFAOYSA-N 0.000 claims description 4
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 4
- 229960005233 cineole Drugs 0.000 claims description 4
- RFFOTVCVTJUTAD-UHFFFAOYSA-N cineole Natural products C1CC2(C)CCC1(C(C)C)O2 RFFOTVCVTJUTAD-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 claims description 3
- 229930004008 p-menthane Natural products 0.000 claims 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 28
- 239000007788 liquid Substances 0.000 description 18
- SGVYKUFIHHTIFL-UHFFFAOYSA-N 2-methylnonane Chemical compound CCCCCCCC(C)C SGVYKUFIHHTIFL-UHFFFAOYSA-N 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- 229910000420 cerium oxide Inorganic materials 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 12
- 239000002699 waste material Substances 0.000 description 12
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 10
- 238000001879 gelation Methods 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 6
- 150000001335 aliphatic alkanes Chemical class 0.000 description 6
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 6
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- CJBFZKZYIPBBTO-UHFFFAOYSA-N isotetradecane Natural products CCCCCCCCCCCC(C)C CJBFZKZYIPBBTO-UHFFFAOYSA-N 0.000 description 6
- HGEMCUOAMCILCP-UHFFFAOYSA-N isotridecane Natural products CCCCCCCCCCC(C)C HGEMCUOAMCILCP-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 5
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- LMGZGXSXHCMSAA-UHFFFAOYSA-N cyclodecane Chemical compound C1CCCCCCCCC1 LMGZGXSXHCMSAA-UHFFFAOYSA-N 0.000 description 4
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 4
- IIYFAKIEWZDVMP-UHFFFAOYSA-N tridecane Chemical compound CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- CNPVJWYWYZMPDS-UHFFFAOYSA-N 2-methyldecane Chemical compound CCCCCCCCC(C)C CNPVJWYWYZMPDS-UHFFFAOYSA-N 0.000 description 3
- GTJOHISYCKPIMT-UHFFFAOYSA-N 2-methylundecane Chemical compound CCCCCCCCCC(C)C GTJOHISYCKPIMT-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 229960000846 camphor Drugs 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- VKPSKYDESGTTFR-UHFFFAOYSA-N isododecane Natural products CC(C)(C)CC(C)CC(C)(C)C VKPSKYDESGTTFR-UHFFFAOYSA-N 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 239000003208 petroleum Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- DDTBPAQBQHZRDW-UHFFFAOYSA-N cyclododecane Chemical compound C1CCCCCCCCCCC1 DDTBPAQBQHZRDW-UHFFFAOYSA-N 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- KYTNZWVKKKJXFS-UHFFFAOYSA-N cycloundecane Chemical compound C1CCCCCCCCCC1 KYTNZWVKKKJXFS-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- KDTWXGUXWNBYGS-UHFFFAOYSA-N 1,2,3,3,4,4-hexamethyl-5H-diazepine Chemical compound CC1(C(N(N(C=CC1)C)C)(C)C)C KDTWXGUXWNBYGS-UHFFFAOYSA-N 0.000 description 1
- UYVWNPAMKCDKRB-UHFFFAOYSA-N 1,2,4,5-tetraoxane Chemical compound C1OOCOO1 UYVWNPAMKCDKRB-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 description 1
- 241000282412 Homo Species 0.000 description 1
- OKJIRPAQVSHGFK-UHFFFAOYSA-N N-acetylglycine Chemical compound CC(=O)NCC(O)=O OKJIRPAQVSHGFK-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 210000003050 axon Anatomy 0.000 description 1
- 229910000062 azane Inorganic materials 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 238000011001 backwashing Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000002468 ceramisation Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000010779 crude oil Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- KATXJJSCAPBIOB-UHFFFAOYSA-N cyclotetradecane Chemical compound C1CCCCCCCCCCCCC1 KATXJJSCAPBIOB-UHFFFAOYSA-N 0.000 description 1
- UEVXKGPJXXDGCX-UHFFFAOYSA-N cyclotridecane Chemical compound C1CCCCCCCCCCCC1 UEVXKGPJXXDGCX-UHFFFAOYSA-N 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D9/00—Chemical paint or ink removers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/20—Diluents or solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Paints Or Removers (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Formation Of Insulating Films (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005026818A JP4578993B2 (ja) | 2005-02-02 | 2005-02-02 | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200632006A TW200632006A (en) | 2006-09-16 |
| TWI466929B true TWI466929B (zh) | 2015-01-01 |
Family
ID=36777232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95103289A TWI466929B (zh) | 2005-02-02 | 2006-01-27 | 聚矽氮烷處理溶劑及用此溶劑之聚矽氮烷之處理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20080102211A1 (enExample) |
| JP (1) | JP4578993B2 (enExample) |
| KR (1) | KR101152694B1 (enExample) |
| CN (1) | CN101111575B (enExample) |
| TW (1) | TWI466929B (enExample) |
| WO (1) | WO2006082848A1 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3479648B2 (ja) * | 2001-12-27 | 2003-12-15 | クラリアント インターナショナル リミテッド | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
| JP4621613B2 (ja) * | 2006-03-09 | 2011-01-26 | 株式会社東芝 | 半導体装置の製造方法 |
| KR101458836B1 (ko) | 2006-12-15 | 2014-11-20 | 도오꾜오까고오교 가부시끼가이샤 | 부극 기재 |
| JP5160189B2 (ja) | 2007-10-26 | 2013-03-13 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物 |
| US8211846B2 (en) * | 2007-12-14 | 2012-07-03 | Lam Research Group | Materials for particle removal by single-phase and two-phase media |
| JP5602346B2 (ja) * | 2008-06-17 | 2014-10-08 | 株式会社ロッテ | ユーカリ抽出物の調製方法 |
| JP4718584B2 (ja) * | 2008-07-01 | 2011-07-06 | ヤスハラケミカル株式会社 | ポリシラザン溶解用処理液、およびこれを用いた半導体装置の製造方法 |
| US8227182B2 (en) * | 2008-08-11 | 2012-07-24 | Samsung Electronics Co., Ltd. | Methods of forming a photosensitive film |
| US8084186B2 (en) * | 2009-02-10 | 2011-12-27 | Az Electronic Materials Usa Corp. | Hardmask process for forming a reverse tone image using polysilazane |
| JP5410207B2 (ja) * | 2009-09-04 | 2014-02-05 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液 |
| JP5539687B2 (ja) * | 2009-09-10 | 2014-07-02 | 東レ・ダウコーニング株式会社 | アルキル変性ポリジメチルシロキサン精製品の製造方法、該精製品を含有する化粧料原料および化粧料 |
| WO2011078446A1 (en) * | 2009-12-23 | 2011-06-30 | Dnf Co., Ltd. | Polysilazane treating solvent and method for treating polysilazane using the same |
| JP5172867B2 (ja) * | 2010-01-07 | 2013-03-27 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | ポリシラザンを含むコーティング組成物 |
| JP2012184378A (ja) * | 2011-03-08 | 2012-09-27 | Fukugo Shizai Kk | 噴射式密閉容器入ポリシラザンコーティング液およびポリシラザンコーティング方法 |
| FR2973808B1 (fr) * | 2011-04-06 | 2015-01-16 | Total Raffinage Marketing | Composition de fluide special et utilisation |
| KR101638655B1 (ko) * | 2011-05-24 | 2016-07-11 | 도오꾜오까고오교 가부시끼가이샤 | 박리용 조성물 및 박리 방법 |
| KR101367252B1 (ko) * | 2011-11-10 | 2014-02-25 | 제일모직 주식회사 | 수소화폴리실록사잔 박막용 린스액 및 이를 이용한 수소화폴리실록사잔 박막의 패턴 형성 방법 |
| JP2014050803A (ja) | 2012-09-07 | 2014-03-20 | Toshiba Corp | 回転塗布装置および回転塗布方法 |
| JP5985406B2 (ja) | 2013-01-31 | 2016-09-06 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置の製造装置 |
| KR101692757B1 (ko) | 2013-04-18 | 2017-01-04 | 제일모직 주식회사 | 절연막용 린스액 및 절연막의 린스 방법 |
| JP2014213318A (ja) * | 2013-04-30 | 2014-11-17 | チェイル インダストリーズインコーポレイテッド | 改質シリカ膜の製造方法、塗工液、及び改質シリカ膜 |
| JP6207995B2 (ja) * | 2013-12-13 | 2017-10-04 | 株式会社Adeka | ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法 |
| US10020185B2 (en) | 2014-10-07 | 2018-07-10 | Samsung Sdi Co., Ltd. | Composition for forming silica layer, silica layer, and electronic device |
| KR101879414B1 (ko) * | 2014-12-16 | 2018-07-17 | 삼성에스디아이 주식회사 | 실리카 박막용 린스액, 실리카 박막의 제조방법, 및 실리카 박막 |
| US20160172188A1 (en) * | 2014-12-16 | 2016-06-16 | Samsung Sdi Co., Ltd. | Rinse solution for silica thin film, method of producing silica thin film, and silica thin film |
| KR101837971B1 (ko) | 2014-12-19 | 2018-03-13 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막, 및 전자 디바이스 |
| KR101833800B1 (ko) | 2014-12-19 | 2018-03-02 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자 |
| KR20170014946A (ko) | 2015-07-31 | 2017-02-08 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막 |
| JP2017200861A (ja) * | 2016-05-02 | 2017-11-09 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | 緻密なシリカ質膜形成用組成物 |
| CN106432738B (zh) * | 2016-10-12 | 2019-09-24 | 中国科学院化学研究所 | 一种含氟聚硅氮烷及其制备方法 |
| CN110925779A (zh) * | 2019-12-11 | 2020-03-27 | 大连东泰产业废弃物处理有限公司 | 一种含有全氢聚硅氮烷废有机溶剂用于焚烧炉的利用方法 |
| JP2021147457A (ja) * | 2020-03-18 | 2021-09-27 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | ポリシラン組成物からシラン発生を抑制するための安定化剤、およびシラン発生を抑制する方法 |
| NO348381B1 (en) * | 2020-07-02 | 2024-12-23 | Nanize As | Polysilazane coating method and device |
| WO2023282106A1 (ja) * | 2021-07-09 | 2023-01-12 | 株式会社スリーボンド | 硬化性組成物、硬化被膜および物品 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08279445A (ja) * | 1995-04-07 | 1996-10-22 | Tokyo Ohka Kogyo Co Ltd | Ｓｏｇ膜形成方法 |
| JPH1098036A (ja) * | 1996-09-20 | 1998-04-14 | Tonen Corp | シリカ質パターンの形成方法 |
| JP2003327908A (ja) * | 2002-05-16 | 2003-11-19 | Clariant (Japan) Kk | ポリシラザン含有コーティング膜の親水性促進剤及び親水性維持剤 |
| JP2004155834A (ja) * | 2002-11-01 | 2004-06-03 | Clariant Internatl Ltd | ポリシラザン含有コーティング液 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE759281A (fr) * | 1969-11-24 | 1971-05-24 | Dow Corning | Procede et composition facilitant le nettoyage de fours et appareils similaires |
| US3983047A (en) * | 1974-11-29 | 1976-09-28 | The United States Of America As Represented By The Secretary Of The Navy | Decal removal composition |
| US4106901A (en) * | 1976-08-31 | 1978-08-15 | Star Chemical, Inc. | Emulsifier-solvent scour composition and method of treating textiles therewith |
| US4664721A (en) * | 1981-12-07 | 1987-05-12 | Intercontinental Chemical Corporation | Printing screen cleaning and reclaiming compositions |
| US5151390A (en) * | 1986-06-13 | 1992-09-29 | Toa Nenryo Kogyo Kabushiki Kaisha | Silicon nitride-based fibers and composite material reinforced with fibers |
| US5164469A (en) * | 1987-11-17 | 1992-11-17 | Japan Synthetic Rubber Co., Ltd. | Transparent resin material |
| US5151219A (en) * | 1988-01-06 | 1992-09-29 | Ocg Microelectronic Materials, Inc. | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
| US5030744A (en) * | 1989-03-23 | 1991-07-09 | Tonen Corporation | Polyborosilazane and process for producing same |
| US5354506A (en) * | 1989-09-28 | 1994-10-11 | Albemarle Corporation | Preceramic compositions and ceramic products |
| GB2243842B (en) | 1990-04-12 | 1993-09-22 | Electrolube Limited | Method and compositions for circuit board cleaning using ether-containing terpenoid compounds |
| US5338475A (en) * | 1991-08-16 | 1994-08-16 | Sterling Drug, Inc. | Carpet cleaning composition with bleach |
| JP2704332B2 (ja) * | 1991-10-11 | 1998-01-26 | 株式会社ノリタケカンパニーリミテド | 炭素繊維強化窒化珪素質ナノ複合材及びその製造方法 |
| JP3283276B2 (ja) * | 1991-12-04 | 2002-05-20 | 東燃ゼネラル石油株式会社 | 改質ポリシラザン及びその製造方法 |
| US5340493A (en) * | 1992-08-20 | 1994-08-23 | Principato Richard J | Low-volatility cleaning compositions for printing inks |
| US5474807A (en) * | 1992-09-30 | 1995-12-12 | Hoya Corporation | Method for applying or removing coatings at a confined peripheral region of a substrate |
| KR950034365A (ko) * | 1994-05-24 | 1995-12-28 | 윌리엄 이. 힐러 | 평판 디스플레이의 애노드 플레이트 및 이의 제조 방법 |
| JP3496895B2 (ja) * | 1994-10-20 | 2004-02-16 | 東京応化工業株式会社 | 半導体ウェーハの処理方法 |
| JPH09125006A (ja) * | 1995-10-30 | 1997-05-13 | Tokyo Ohka Kogyo Co Ltd | ポリシラザン系塗布液及びそれを用いたセラミックス被膜の形成方法 |
| JP3740207B2 (ja) * | 1996-02-13 | 2006-02-01 | 大日本スクリーン製造株式会社 | 基板表面に形成されたシリカ系被膜の膜溶解方法 |
| JPH10212114A (ja) * | 1996-11-26 | 1998-08-11 | Tonen Corp | ＳｉＯ２系セラミックス膜の形成方法 |
| JP4053105B2 (ja) * | 1996-12-30 | 2008-02-27 | Ａｚエレクトロニックマテリアルズ株式会社 | シリカ質セラミックス被膜の形成方法及び同方法で形成されたセラミックス被膜 |
| JPH11233510A (ja) * | 1998-02-16 | 1999-08-27 | Tonen Corp | 裾引き形状を有するＳｉＯ２系被膜の形成方法 |
| JP2000012536A (ja) * | 1998-06-24 | 2000-01-14 | Tokyo Ohka Kogyo Co Ltd | シリカ被膜形成方法 |
| US6413202B1 (en) * | 1999-01-21 | 2002-07-02 | Alliedsignal, Inc. | Solvent systems for polymeric dielectric materials |
| JP5291275B2 (ja) * | 2000-07-27 | 2013-09-18 | 有限会社コンタミネーション・コントロール・サービス | コーティング膜が施された部材及びコーティング膜の製造方法 |
| JP4722269B2 (ja) * | 2000-08-29 | 2011-07-13 | Ａｚエレクトロニックマテリアルズ株式会社 | 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法 |
| JP3722418B2 (ja) * | 2000-12-08 | 2005-11-30 | 信越化学工業株式会社 | 反射防止膜及びこれを利用した光学部材 |
| KR100354441B1 (en) * | 2000-12-27 | 2002-09-28 | Samsung Electronics Co Ltd | Method for fabricating spin-on-glass insulation layer of semiconductor device |
| TWI259844B (en) * | 2001-04-27 | 2006-08-11 | Clariant Int Ltd | Anti-fouling coating solution containing inorganic polysilazane |
| JP2003100865A (ja) * | 2001-09-21 | 2003-04-04 | Catalysts & Chem Ind Co Ltd | 半導体基板の製造方法および半導体基板 |
| JP3479648B2 (ja) * | 2001-12-27 | 2003-12-15 | クラリアント インターナショナル リミテッド | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
| EP1388818B1 (en) * | 2002-08-10 | 2011-06-22 | Samsung Electronics Co., Ltd. | Method and apparatus for rendering image signal |
-
2005
- 2005-02-02 JP JP2005026818A patent/JP4578993B2/ja not_active Expired - Lifetime
-
2006
- 2006-01-27 TW TW95103289A patent/TWI466929B/zh active
- 2006-02-01 CN CN2006800035343A patent/CN101111575B/zh active Active
- 2006-02-01 WO PCT/JP2006/301662 patent/WO2006082848A1/ja not_active Ceased
- 2006-02-01 KR KR1020077020028A patent/KR101152694B1/ko active Active
- 2006-02-01 US US11/795,100 patent/US20080102211A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08279445A (ja) * | 1995-04-07 | 1996-10-22 | Tokyo Ohka Kogyo Co Ltd | Ｓｏｇ膜形成方法 |
| JPH1098036A (ja) * | 1996-09-20 | 1998-04-14 | Tonen Corp | シリカ質パターンの形成方法 |
| JP2003327908A (ja) * | 2002-05-16 | 2003-11-19 | Clariant (Japan) Kk | ポリシラザン含有コーティング膜の親水性促進剤及び親水性維持剤 |
| JP2004155834A (ja) * | 2002-11-01 | 2004-06-03 | Clariant Internatl Ltd | ポリシラザン含有コーティング液 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070108214A (ko) | 2007-11-08 |
| CN101111575A (zh) | 2008-01-23 |
| US20080102211A1 (en) | 2008-05-01 |
| JP2006216704A (ja) | 2006-08-17 |
| KR101152694B1 (ko) | 2012-06-15 |
| WO2006082848A1 (ja) | 2006-08-10 |
| JP4578993B2 (ja) | 2010-11-10 |
| CN101111575B (zh) | 2010-06-23 |
| TW200632006A (en) | 2006-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI466929B (zh) | 聚矽氮烷處理溶劑及用此溶劑之聚矽氮烷之處理方法 | |
| JP3479648B2 (ja) | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 | |
| JP6322068B2 (ja) | オプトエレクトロニクスデバイス用の組成物、層、及びフィルム、並びにこれらの使用 | |
| TWI303834B (en) | Mixtures and processes for preparing low dielectric films, films prepared therefrom and semiconductor devices comprising the film | |
| US6451436B1 (en) | Coating liquid for forming a silica-containing film with a low-dielectric constant and substrate coated with such a film | |
| KR20110073176A (ko) | 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔 처리 방법 | |
| TWI758813B (zh) | 組成物及接著性聚合物之洗淨方法 | |
| KR101178215B1 (ko) | 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔 처리 방법 | |
| CN101679923A (zh) | 有机薄膜清洗用溶剂 | |
| JP6207995B2 (ja) | ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法 | |
| JP2014203858A (ja) | ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法 | |
| JPH06240455A (ja) | 酸化ケイ素膜の形成方法 | |
| WO2011078446A1 (en) | Polysilazane treating solvent and method for treating polysilazane using the same | |
| TW201510005A (zh) | 從基材去除聚矽氧樹脂的方法 | |
| KR101400184B1 (ko) | 수소화폴리실록사잔 박막용 린스액 및 이를 이용한 수소화폴리실록사잔 박막의 패턴 형성 방법 | |
| KR102416225B1 (ko) | 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔의 처리 방법 | |
| KR20170107276A (ko) | 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔의 처리 방법 | |
| TW201938783A (zh) | 用以去除乾蝕刻殘渣之洗淨液及使用此洗淨液之半導體基板之製造方法 | |
| WO2025197512A1 (ja) | 半導体デバイス処理用の組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法 | |
| WO2025182463A1 (ja) | 組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法 | |
| WO2023114214A1 (en) | Spin coatable metal-containing compositions and methods of using the same | |
| TW202313947A (zh) | 分解洗淨組成物及其製造方法，以及接著性聚合物之洗淨方法 |