KR101152694B1 - 폴리실라잔 처리용 용매 및 당해 용매를 사용하는폴리실라잔의 처리방법 - Google Patents

폴리실라잔 처리용 용매 및 당해 용매를 사용하는폴리실라잔의 처리방법 Download PDF

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KR101152694B1
KR101152694B1 KR1020077020028A KR20077020028A KR101152694B1 KR 101152694 B1 KR101152694 B1 KR 101152694B1 KR 1020077020028 A KR1020077020028 A KR 1020077020028A KR 20077020028 A KR20077020028 A KR 20077020028A KR 101152694 B1 KR101152694 B1 KR 101152694B1
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polysilazane
solvent
good
good example
treating
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KR20070108214A (ko
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히데키 마쓰오
마사아키 이치야마
도모노리 이시카와
히로유키 아오키
브루스 키커
조셉 오버랜더
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에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00—Chemical paint or ink removers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/24—Hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Paints Or Removers (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020077020028A 2005-02-02 2006-02-01 폴리실라잔 처리용 용매 및 당해 용매를 사용하는폴리실라잔의 처리방법 Active KR101152694B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00026818 2005-02-02
JP2005026818A JP4578993B2 (ja) 2005-02-02 2005-02-02 ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
PCT/JP2006/301662 WO2006082848A1 (ja) 2005-02-02 2006-02-01 ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法

Publications (2)

Publication Number Publication Date
KR20070108214A KR20070108214A (ko) 2007-11-08
KR101152694B1 true KR101152694B1 (ko) 2012-06-15

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KR1020077020028A Active KR101152694B1 (ko) 2005-02-02 2006-02-01 폴리실라잔 처리용 용매 및 당해 용매를 사용하는폴리실라잔의 처리방법

Country Status (6)

Country Link
US (1) US20080102211A1 (enExample)
JP (1) JP4578993B2 (enExample)
KR (1) KR101152694B1 (enExample)
CN (1) CN101111575B (enExample)
TW (1) TWI466929B (enExample)
WO (1) WO2006082848A1 (enExample)

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JP3479648B2 (ja) * 2001-12-27 2003-12-15 クラリアント インターナショナル リミテッド ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
JP4621613B2 (ja) * 2006-03-09 2011-01-26 株式会社東芝 半導体装置の製造方法
KR101458836B1 (ko) 2006-12-15 2014-11-20 도오꾜오까고오교 가부시끼가이샤 부극 기재
JP5160189B2 (ja) 2007-10-26 2013-03-13 ＡｚエレクトロニックマテリアルズＩｐ株式会社 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物
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KR101837971B1 (ko) 2014-12-19 2018-03-13 삼성에스디아이 주식회사 실리카계 막 형성용　조성물, 실리카계 막, 및 전자 디바이스
KR101833800B1 (ko) 2014-12-19 2018-03-02 삼성에스디아이 주식회사 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자
KR20170014946A (ko) 2015-07-31 2017-02-08 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
JP2017200861A (ja) * 2016-05-02 2017-11-09 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 緻密なシリカ質膜形成用組成物
CN106432738B (zh) * 2016-10-12 2019-09-24 中国科学院化学研究所 一种含氟聚硅氮烷及其制备方法
CN110925779A (zh) * 2019-12-11 2020-03-27 大连东泰产业废弃物处理有限公司 一种含有全氢聚硅氮烷废有机溶剂用于焚烧炉的利用方法
JP2021147457A (ja) * 2020-03-18 2021-09-27 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH ポリシラン組成物からシラン発生を抑制するための安定化剤、およびシラン発生を抑制する方法
NO348381B1 (en) * 2020-07-02 2024-12-23 Nanize As Polysilazane coating method and device
WO2023282106A1 (ja) * 2021-07-09 2023-01-12 株式会社スリーボンド 硬化性組成物、硬化被膜および物品

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KR20070108214A (ko) 2007-11-08
CN101111575A (zh) 2008-01-23
US20080102211A1 (en) 2008-05-01
JP2006216704A (ja) 2006-08-17
TWI466929B (zh) 2015-01-01
WO2006082848A1 (ja) 2006-08-10
JP4578993B2 (ja) 2010-11-10
CN101111575B (zh) 2010-06-23
TW200632006A (en) 2006-09-16

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