JP4578993B2 - ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 - Google Patents

ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 Download PDF

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Publication number
JP4578993B2
JP4578993B2 JP2005026818A JP2005026818A JP4578993B2 JP 4578993 B2 JP4578993 B2 JP 4578993B2 JP 2005026818 A JP2005026818 A JP 2005026818A JP 2005026818 A JP2005026818 A JP 2005026818A JP 4578993 B2 JP4578993 B2 JP 4578993B2
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JP
Japan
Prior art keywords
polysilazane
solvent
substrate
film
treatment
Prior art date
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Expired - Lifetime
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JP2005026818A
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English (en)
Japanese (ja)
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JP2006216704A (ja
JP2006216704A5 (enExample
Inventor
尾 英 樹 松
山 昌 章 一
川 智 規 石
木 宏 幸 青
ブルース、カイカー
ジョセフ、オーバーランダー
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AZ Electronic Materials Japan Co Ltd
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AZ Electronic Materials Japan Co Ltd
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Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Priority to JP2005026818A priority Critical patent/JP4578993B2/ja
Priority to TW95103289A priority patent/TWI466929B/zh
Priority to KR1020077020028A priority patent/KR101152694B1/ko
Priority to PCT/JP2006/301662 priority patent/WO2006082848A1/ja
Priority to US11/795,100 priority patent/US20080102211A1/en
Priority to CN2006800035343A priority patent/CN101111575B/zh
Publication of JP2006216704A publication Critical patent/JP2006216704A/ja
Publication of JP2006216704A5 publication Critical patent/JP2006216704A5/ja
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Publication of JP4578993B2 publication Critical patent/JP4578993B2/ja
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Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00—Chemical paint or ink removers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/24—Hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Paints Or Removers (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2005026818A 2005-02-02 2005-02-02 ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 Expired - Lifetime JP4578993B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005026818A JP4578993B2 (ja) 2005-02-02 2005-02-02 ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
TW95103289A TWI466929B (zh) 2005-02-02 2006-01-27 聚矽氮烷處理溶劑及用此溶劑之聚矽氮烷之處理方法
PCT/JP2006/301662 WO2006082848A1 (ja) 2005-02-02 2006-02-01 ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
US11/795,100 US20080102211A1 (en) 2005-02-02 2006-02-01 Polysilazane-Treating Solvent and Method for Treating Polysilazane by Using Such Solvent
KR1020077020028A KR101152694B1 (ko) 2005-02-02 2006-02-01 폴리실라잔 처리용 용매 및 당해 용매를 사용하는폴리실라잔의 처리방법
CN2006800035343A CN101111575B (zh) 2005-02-02 2006-02-01 聚硅氮烷处理溶剂及用该溶剂处理聚硅氮烷的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005026818A JP4578993B2 (ja) 2005-02-02 2005-02-02 ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法

Publications (3)

Publication Number Publication Date
JP2006216704A JP2006216704A (ja) 2006-08-17
JP2006216704A5 JP2006216704A5 (enExample) 2008-01-31
JP4578993B2 true JP4578993B2 (ja) 2010-11-10

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JP2005026818A Expired - Lifetime JP4578993B2 (ja) 2005-02-02 2005-02-02 ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法

Country Status (6)

Country Link
US (1) US20080102211A1 (enExample)
JP (1) JP4578993B2 (enExample)
KR (1) KR101152694B1 (enExample)
CN (1) CN101111575B (enExample)
TW (1) TWI466929B (enExample)
WO (1) WO2006082848A1 (enExample)

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JP3479648B2 (ja) * 2001-12-27 2003-12-15 クラリアント インターナショナル リミテッド ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
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KR101833800B1 (ko) 2014-12-19 2018-03-02 삼성에스디아이 주식회사 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자
KR20170014946A (ko) 2015-07-31 2017-02-08 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
JP2017200861A (ja) * 2016-05-02 2017-11-09 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 緻密なシリカ質膜形成用組成物
CN106432738B (zh) * 2016-10-12 2019-09-24 中国科学院化学研究所 一种含氟聚硅氮烷及其制备方法
CN110925779A (zh) * 2019-12-11 2020-03-27 大连东泰产业废弃物处理有限公司 一种含有全氢聚硅氮烷废有机溶剂用于焚烧炉的利用方法
JP2021147457A (ja) * 2020-03-18 2021-09-27 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH ポリシラン組成物からシラン発生を抑制するための安定化剤、およびシラン発生を抑制する方法
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WO2023282106A1 (ja) * 2021-07-09 2023-01-12 株式会社スリーボンド 硬化性組成物、硬化被膜および物品

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EP1388818B1 (en) * 2002-08-10 2011-06-22 Samsung Electronics Co., Ltd. Method and apparatus for rendering image signal
JP2004155834A (ja) * 2002-11-01 2004-06-03 Clariant Internatl Ltd ポリシラザン含有コーティング液

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KR101152694B1 (ko) 2012-06-15
TWI466929B (zh) 2015-01-01
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CN101111575B (zh) 2010-06-23
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