TWI466926B - 基於矽之抗反射塗覆組合物 - Google Patents
基於矽之抗反射塗覆組合物 Download PDFInfo
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- TWI466926B TWI466926B TW97106717A TW97106717A TWI466926B TW I466926 B TWI466926 B TW I466926B TW 97106717 A TW97106717 A TW 97106717A TW 97106717 A TW97106717 A TW 97106717A TW I466926 B TWI466926 B TW I466926B
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- Prior art keywords
- group
- decane
- polymer
- alkyl
- groups
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 63
- 239000006117 anti-reflective coating Substances 0.000 title claims description 32
- 229910052710 silicon Inorganic materials 0.000 title description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 103
- 229920000642 polymer Polymers 0.000 claims description 91
- 239000002904 solvent Substances 0.000 claims description 60
- 229920002120 photoresistant polymer Polymers 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 53
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 39
- 125000003545 alkoxy group Chemical group 0.000 claims description 32
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 31
- -1 decane alkane Chemical class 0.000 claims description 29
- 125000000217 alkyl group Chemical group 0.000 claims description 26
- 239000007787 solid Substances 0.000 claims description 24
- 229910008051 Si-OH Inorganic materials 0.000 claims description 22
- 229910006358 Si—OH Inorganic materials 0.000 claims description 22
- WJMXTYZCTXTFJM-UHFFFAOYSA-N 1,1,1,2-tetraethoxydecane Chemical compound C(C)OC(C(OCC)(OCC)OCC)CCCCCCCC WJMXTYZCTXTFJM-UHFFFAOYSA-N 0.000 claims description 20
- JSGRIFNBTXDZQU-UHFFFAOYSA-N C1(=CC=CC=C1)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C1(=CC=CC=C1)C(C(OC)(OC)OC)CCCCCCCC JSGRIFNBTXDZQU-UHFFFAOYSA-N 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 125000000524 functional group Chemical group 0.000 claims description 16
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 13
- 230000000087 stabilizing effect Effects 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 9
- 238000009833 condensation Methods 0.000 claims description 9
- 230000005494 condensation Effects 0.000 claims description 9
- PZKBIVOXIFYDRI-UHFFFAOYSA-N CC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound CC(C(OCC)(OCC)OCC)CCCCCCCC PZKBIVOXIFYDRI-UHFFFAOYSA-N 0.000 claims description 8
- 230000032683 aging Effects 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 7
- 125000003342 alkenyl group Chemical group 0.000 claims description 7
- 150000008064 anhydrides Chemical group 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 5
- ANBBCZAIOXDZPV-UHFFFAOYSA-N 1,1,1-trimethoxy-2-methyldecane Chemical compound CC(C(OC)(OC)OC)CCCCCCCC ANBBCZAIOXDZPV-UHFFFAOYSA-N 0.000 claims description 4
- 229910009257 Y—Si Inorganic materials 0.000 claims description 4
- 125000004104 aryloxy group Chemical group 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 4
- 125000006612 decyloxy group Chemical group 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 125000005647 linker group Chemical group 0.000 claims description 4
- AGGJWJFEEKIYOF-UHFFFAOYSA-N 1,1,1-triethoxydecane Chemical compound CCCCCCCCCC(OCC)(OCC)OCC AGGJWJFEEKIYOF-UHFFFAOYSA-N 0.000 claims description 3
- VPLKXGORNUYFBO-UHFFFAOYSA-N C1(CC2C(CC1)O2)CCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C1(CC2C(CC1)O2)CCC(C(OC)(OC)OC)CCCCCCCC VPLKXGORNUYFBO-UHFFFAOYSA-N 0.000 claims description 3
- BBWFBBVQVRYACB-UHFFFAOYSA-N C1(CC2C(CC1)O2)CCC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound C1(CC2C(CC1)O2)CCC(C(OCC)(OCC)OCC)CCCCCCCC BBWFBBVQVRYACB-UHFFFAOYSA-N 0.000 claims description 3
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 3
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 3
- 125000000304 alkynyl group Chemical group 0.000 claims description 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- 125000005913 (C3-C6) cycloalkyl group Chemical group 0.000 claims description 2
- CWZQYRJRRHYJOI-UHFFFAOYSA-N 1,1,1-trimethoxydecane Chemical compound CCCCCCCCCC(OC)(OC)OC CWZQYRJRRHYJOI-UHFFFAOYSA-N 0.000 claims description 2
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 claims description 2
- UEYMLSDWUUKDND-UHFFFAOYSA-N C(C)C(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound C(C)C(C(OCC)(OCC)OCC)CCCCCCCC UEYMLSDWUUKDND-UHFFFAOYSA-N 0.000 claims description 2
- LBWNUYMSVAACJF-UHFFFAOYSA-N C(C)OC(CCCCCCCCCCCCC1C(=O)OC(C1)=O)(OCC)OCC Chemical compound C(C)OC(CCCCCCCCCCCCC1C(=O)OC(C1)=O)(OCC)OCC LBWNUYMSVAACJF-UHFFFAOYSA-N 0.000 claims description 2
- MTDLVDBRMBSPBJ-UHFFFAOYSA-N C(C1CO1)OCCCC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound C(C1CO1)OCCCC(C(OCC)(OCC)OCC)CCCCCCCC MTDLVDBRMBSPBJ-UHFFFAOYSA-N 0.000 claims description 2
- YMNPHIPHSDTGEP-UHFFFAOYSA-N C(C1CO1)OCCCC(C(OCCC)(OCCC)OCCC)CCCCCCCC Chemical compound C(C1CO1)OCCCC(C(OCCC)(OCCC)OCCC)CCCCCCCC YMNPHIPHSDTGEP-UHFFFAOYSA-N 0.000 claims description 2
- LDJSOHIMXABWJZ-UHFFFAOYSA-N C(CC)C1(C(OCC)(OCC)OCC)C(CCCCCCC)O1 Chemical compound C(CC)C1(C(OCC)(OCC)OCC)C(CCCCCCC)O1 LDJSOHIMXABWJZ-UHFFFAOYSA-N 0.000 claims description 2
- ZGGFQLIYVIEIKX-UHFFFAOYSA-N C(CCC)C(C(OCC)(OCC)OCC)C1C(CCCCCC)O1 Chemical compound C(CCC)C(C(OCC)(OCC)OCC)C1C(CCCCCC)O1 ZGGFQLIYVIEIKX-UHFFFAOYSA-N 0.000 claims description 2
- FPYZFGNMCPBDBU-UHFFFAOYSA-N C(CCC)C(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound C(CCC)C(C(OCC)(OCC)OCC)CCCCCCCC FPYZFGNMCPBDBU-UHFFFAOYSA-N 0.000 claims description 2
- NGTMLGAWOYDFLH-UHFFFAOYSA-N C(CCCC)C(C(OCC)(OCC)OCC)CC1C(CCCCC)O1 Chemical compound C(CCCC)C(C(OCC)(OCC)OCC)CC1C(CCCCC)O1 NGTMLGAWOYDFLH-UHFFFAOYSA-N 0.000 claims description 2
- XTAXLSGDBAQIHP-UHFFFAOYSA-N C(CCCCC)C(C(OC)(OC)OC)CCC1C(CCCC)O1 Chemical compound C(CCCCC)C(C(OC)(OC)OC)CCC1C(CCCC)O1 XTAXLSGDBAQIHP-UHFFFAOYSA-N 0.000 claims description 2
- GAWAEIBQSZUOQW-UHFFFAOYSA-N C(CCCCC)C(C(OCC)(OCC)OCC)CCC1C(CCCC)O1 Chemical compound C(CCCCC)C(C(OCC)(OCC)OCC)CCC1C(CCCC)O1 GAWAEIBQSZUOQW-UHFFFAOYSA-N 0.000 claims description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 125000005429 oxyalkyl group Chemical group 0.000 claims description 2
- CBJSDGMINZPUPF-UHFFFAOYSA-N CC(C(OC)(OC)Cl)CCCCCCCC Chemical compound CC(C(OC)(OC)Cl)CCCCCCCC CBJSDGMINZPUPF-UHFFFAOYSA-N 0.000 claims 2
- LNEJJQMNHUGXDW-UHFFFAOYSA-N CC(C(OCC)(OCC)C)CCCCCCCC Chemical compound CC(C(OCC)(OCC)C)CCCCCCCC LNEJJQMNHUGXDW-UHFFFAOYSA-N 0.000 claims 2
- 125000003158 alcohol group Chemical group 0.000 claims 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- WHIVNJATOVLWBW-UHFFFAOYSA-N n-butan-2-ylidenehydroxylamine Chemical compound CCC(C)=NO WHIVNJATOVLWBW-UHFFFAOYSA-N 0.000 claims 2
- 229920002554 vinyl polymer Polymers 0.000 claims 2
- WABVQKPVNNPRHB-UHFFFAOYSA-N (1,1-dichloro-1-phenyldecan-2-yl)benzene Chemical compound C1(=CC=CC=C1)C(C(Cl)(Cl)C1=CC=CC=C1)CCCCCCCC WABVQKPVNNPRHB-UHFFFAOYSA-N 0.000 claims 1
- OTGGHZUEAWMAAK-UHFFFAOYSA-N (1,1-dimethoxy-1-phenyldecan-2-yl)benzene Chemical compound C1(=CC=CC=C1)C(C(OC)(OC)C1=CC=CC=C1)CCCCCCCC OTGGHZUEAWMAAK-UHFFFAOYSA-N 0.000 claims 1
- KYUCWJRUVWJDOF-UHFFFAOYSA-N 1,1,1-trifluoro-4-(triethoxymethyl)dodecane Chemical compound FC(CCC(C(OCC)(OCC)OCC)CCCCCCCC)(F)F KYUCWJRUVWJDOF-UHFFFAOYSA-N 0.000 claims 1
- DQGPWNBGAYGUPK-UHFFFAOYSA-N 1,1,1-trifluoro-4-(trimethoxymethyl)dodecane Chemical compound FC(CCC(C(OC)(OC)OC)CCCCCCCC)(F)F DQGPWNBGAYGUPK-UHFFFAOYSA-N 0.000 claims 1
- DGZPBRFJRXDRDD-UHFFFAOYSA-N 1-chloro-4-(triethoxymethyl)dodecane Chemical compound ClCCCC(C(OCC)(OCC)OCC)CCCCCCCC DGZPBRFJRXDRDD-UHFFFAOYSA-N 0.000 claims 1
- SMLNDVNTPWRZJH-UHFFFAOYSA-N 1-chloro-4-(trimethoxymethyl)dodecane Chemical compound ClCCCC(C(OC)(OC)OC)CCCCCCCC SMLNDVNTPWRZJH-UHFFFAOYSA-N 0.000 claims 1
- GCZWJRLXIPVNLU-UHFFFAOYSA-N 2,2-dimethoxy-3-methylundecane Chemical compound CC(C(OC)(OC)C)CCCCCCCC GCZWJRLXIPVNLU-UHFFFAOYSA-N 0.000 claims 1
- YNICHAOCDICNOT-UHFFFAOYSA-N 2,2-dimethoxyundecane Chemical compound CCCCCCCCCC(C)(OC)OC YNICHAOCDICNOT-UHFFFAOYSA-N 0.000 claims 1
- JJCSHDJYJIBTNM-UHFFFAOYSA-N 3,3-diethoxydodecane Chemical compound CCCCCCCCCC(CC)(OCC)OCC JJCSHDJYJIBTNM-UHFFFAOYSA-N 0.000 claims 1
- LBIHNTAFJVHBLJ-UHFFFAOYSA-N 3-(triethoxymethyl)undec-1-ene Chemical compound C(=C)C(C(OCC)(OCC)OCC)CCCCCCCC LBIHNTAFJVHBLJ-UHFFFAOYSA-N 0.000 claims 1
- IIEWMRPKJCXTAD-UHFFFAOYSA-N 3-(trimethoxymethyl)undecane Chemical compound C(C)C(C(OC)(OC)OC)CCCCCCCC IIEWMRPKJCXTAD-UHFFFAOYSA-N 0.000 claims 1
- GNPSQUCXOBDIDY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane Chemical compound C(CCCCCCC)C(C(OC)(OC)OC)CCC GNPSQUCXOBDIDY-UHFFFAOYSA-N 0.000 claims 1
- DFYGYTNMHPUJBY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane-1-thiol Chemical compound SCCCC(C(OC)(OC)OC)CCCCCCCC DFYGYTNMHPUJBY-UHFFFAOYSA-N 0.000 claims 1
- 241000208340 Araliaceae Species 0.000 claims 1
- JZHKIUBMQMDQRG-UHFFFAOYSA-N C(=C)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(=C)C(C(OC)(OC)OC)CCCCCCCC JZHKIUBMQMDQRG-UHFFFAOYSA-N 0.000 claims 1
- BNIOOHXVEYTDJT-UHFFFAOYSA-N C(C)(C)C(C(OC)(OC)C(C)C)CCCCCCCC Chemical compound C(C)(C)C(C(OC)(OC)C(C)C)CCCCCCCC BNIOOHXVEYTDJT-UHFFFAOYSA-N 0.000 claims 1
- QHZTWVUCCHJANV-UHFFFAOYSA-N C(C)(C)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(C)(C)C(C(OC)(OC)OC)CCCCCCCC QHZTWVUCCHJANV-UHFFFAOYSA-N 0.000 claims 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 1
- WLJNZVDCPSBLRP-UHFFFAOYSA-N pamoic acid Chemical compound C1=CC=C2C(CC=3C4=CC=CC=C4C=C(C=3O)C(=O)O)=C(O)C(C(O)=O)=CC2=C1 WLJNZVDCPSBLRP-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical group [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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Description
本發明係關於一種具有增加穩定性之基於矽之抗反射塗層(ARC)/硬質遮罩組合物。
在微電子工業中,趨勢為減小結構特徵之尺寸。使用有效光阻劑之顯微蝕刻術提供有效技術。然而,隨著特徵持續小型化,亦需要減小光阻劑厚度。對於一些微影成像方法而言,在先進顯微蝕刻術中所用之薄光阻劑可能不再對基板蝕刻提供足夠遮蔽預算以在高保真度下達成圖案轉印。
此問題之一解決方法為使用一下伏於光阻劑之層,其不僅充當抗反射塗層,且亦提供充分蝕刻選擇性。此增強之蝕刻選擇性將允許此底層用作影像轉印中間物。在目前技術水平之技術發展中,含矽之底部抗反射塗層係為此目的而採用。
對於一些微影成像方法而言,所用光阻劑對隨後蝕刻步驟不提供足夠抗性(遮蔽)以使得所需圖案有效轉印至下伏於光阻劑之層上。在許多情況(例如,需要超薄光阻劑層之情況、待蝕刻之下伏材料較厚之情況、需要實質蝕刻深度之情況及/或對於特定下伏材料需要使用某些蝕刻劑之情況)下,將所謂硬質遮罩層用作在光阻劑層與待藉由自圖案化光阻劑轉印而圖案化之下伏材料之間的中間物。該硬質遮罩層接受來自該圖案化光阻劑層之圖案且應能夠經
受將圖案轉印至下伏材料所需之蝕刻製程。
在光阻劑不提供足夠乾式抗蝕性之情況下,底層與抗反射性質之組合可充當硬質遮罩。藉由用氟化氣體蝕刻可輕易將光阻劑影像轉印至含矽抗反射塗層上,因為氟對矽官能基具高度反應性,其將該塗層分解為氣態Si-F物質。此舉在穿透Si硬質遮罩時極為必要。另一方面,當在蝕刻期間使用氧氣時,高Si含量遮罩具有出色抗蝕性,此係因為在有機底層被蝕刻時SiO2
之形成產生硬質遮罩。如同光阻劑一般,有機底層充當基板蝕刻之遮罩。實質上,使用三層系統之目的在於在不同條件下具有高抗蝕性與低抗蝕性。在三層系統中,底層(通常為基於碳之底層)形成於基板(例如Si型基板)上,基於矽之層(Si-BARC)係塗覆於該底層之上,且隨後光阻劑係形成於該基於矽之層之頂部上。對於微影及圖案轉印兩者而言,高度需要將層之間的元素不均衡需求與抗反射性質組合。
此外,若下伏材料層過度反射用於使光阻劑層圖案化之成像輻射,則通常在下伏層與光阻劑層之間塗佈薄的抗反射塗層。在一些情況下,可由同一材料來提供抗反射及硬質遮罩功能。
儘管在先前技術中存在許多硬質遮罩及抗反射塗層材料,但仍繼續需要改良組合物。許多先前技術材料具有穩定性問題,其降低該等材料之存放期,且因此難以使用。需要具有增加穩定性及延長存放期之基於矽之抗反射塗層/硬質遮罩組合物。
本發明係關於一種聚合物,其包含具有至少一個Si-OH基團及至少一個Si-OR基團之矽氧烷聚合物,其中R為視情況具有反應性官能基之縮合穩定基團,其中當將該矽氧烷聚合物置於溶劑中時,在40℃下老化一週後如由GPC所量測,其具有小於或等於50%之重量平均分子量增加。在一些情況下,該等Si-OH基團與該等Si-OR基團係以約1:5至約5:1之比率存在。本發明亦提供一種經塗覆基板,該基板在其上具有上述抗反射塗覆組合物之塗膜,該經塗覆基板為(例如)矽晶圓或有機(基於碳)底層。另外,本發明亦提供一種形成光凸版影像之方法,其中基板在其上具有抗反射塗覆組合物層且隨後向其塗佈化學放大型光阻劑組合物。
本發明係關於一種聚合物,其包含具有至少一個Si-OH基團及至少一個Si-OR基團之矽氧烷聚合物,其中R為視情況具有反應性官能基之縮合穩定基團,其中當將該矽氧烷聚合物置於溶劑中時,在40℃下老化一週後如由GPC所量測,其具有小於或等於50%之重量平均分子量增加。在一些情況下,該等Si-OH基團與該等Si-OR基團係以約1:5至約5:1之比率存在。本發明亦提供一種經塗覆基板,該基板在其上具有上述抗反射塗覆組合物之塗膜,該經塗覆基板為(例如)矽晶圓(或其他晶圓,諸如SiO2
、SiON、SiN、p-Si、α-Si、W、W-Si、Al、Cu、Al-si及其類似物)或有機
(基於碳)底層。另外,本發明亦提供一種形成光凸版影像之方法,其中基板在其上具有抗反射塗覆組合物層且隨後向其塗佈化學放大型光阻劑組合物。
本發明揭示藉由封端一些(但非全部)矽烷醇或烷氧基矽烷基或藉由反應性羥基官能基之矽烷化來對矽氧烷聚合物進行改質。改質倍半氧矽烷聚合物展現增強之穩定性及延長之存放期。含有可交聯官能基及發色團之改質倍半氧矽烷聚合物在微影方法中可用作抗反射塗層或硬質遮罩材料。
熟習此項技術者熟知矽氧烷聚合物。矽氧烷聚合物通常由根據M型、D型、T型及Q型命名之基於矽之單元組成,其結構展示於下。
其中Ra
、Rb
及Rc
係選自烴基、環氧官能基及酐官能基,且當所連接氧原子與另一矽原子鍵結時,p具有0.5之值;而當所連接氧原子與除矽原子之外的原子鍵結時,p具有1之值。
本發明之聚合物通常包含一或多個三官能矽氧烷單元(T),
及一或多個四官能矽氧烷單元(Q),
其中當所連接氧原子與另一矽原子鍵結時,p具有0.5之值;而當所連接氧原子與除矽原子之外的原子鍵結時,p具有1之值,其限制條件為各T及Q單元中之至少一個P具有0.5之值;各R10
係獨立地選自由烷基、烯基、炔基、環烷基、芳基、烷芳基、芳烷基、(烷基)丙烯酸酯基、(烷基)丙烯醯氧基烷基、(烷基)丙烯醯氧基烯基、環氧官能基及酐官能基組成之群。在大多數情況下,矽氧烷聚合物中T與Q單元數目之和將大於或等於50%。
T及Q單元之實例包括三乙氧基矽烷、四乙氧基矽烷、甲基三乙氧基矽烷、乙基三乙氧基矽烷、正丁基三乙氧基矽烷、苯基三乙氧基矽烷、9-菲基三乙氧基矽烷、苯基三甲氧基矽烷、四甲氧基矽烷、甲基三甲氧基矽烷、甲基三氯矽烷、乙基三氯矽烷、苯基三氯矽烷、氯三乙氧基矽
烷、氯三甲氧基矽烷、氯甲基三乙氧基矽烷、氯乙基三乙氧基矽烷、氯苯基三乙氧基矽烷、氯甲基三甲氧基矽烷、氯乙基三甲氧基矽烷及氯苯基三甲氧基矽烷、2-(3,4-環氧基環己基)乙基三乙氧基矽烷及其類似物。
通常在製備矽氧烷聚合物時,最終結果為具有眾多Si-OH鍵之聚合物。該等Si-OH鍵隨後變得易於水解,其使得含有該等具有眾多Si-OH鍵之聚合物之組合物不穩定且具有短存放期。
申請人已發現:藉由用Si-OR基團置換一些(但非全部)Si-OH基團,含有該等聚合物之組合物較為穩定且具有較長存放期。此可藉由測試矽氧烷聚合物來量測,當將矽氧烷聚合物置於溶劑中時,在40℃下老化一週後如由GPC對分子量進行量測,其相對於聚苯乙烯標準物具有小於或等於50%之重量平均分子量增加。
在用Si-OR基團置換一些Si-OH基團時,R為視情況具有反應性官能基之縮合穩定基團。當在該縮合穩定基團上存在官能基時,則有可能在矽氧烷聚合物自身之間或矽氧烷聚合物與其他物質(諸如交聯劑)之間產生進一步交聯。
縮合穩定基團可為醇之殘基;具有式R1
R2
R3
SiR4
之化合物,其中R1
、R2
、R3
及R4
中之每一者係個別地選自氫、鹵基、C1-10
烷基、C2-4
烯基、C3-10
環烷基、芳基、C1-10
烷氧基、醯氧基、芳氧基、矽烷氧基、矽烷氧基矽烷基、NR8
R9
,其中R8
及R9
中之每一者係選自C1-10
烷基、ON=CR6
R7
,其中R6
及R7
係各自個別地選自氫、C1-10
烷
基,或R6
及R7
連同其所結合之碳原子一起形成C3-6
環烷基環;或具有式(R12
)3
Si-Y-Si(R12
)3
之化合物,其中各R12
係個別地選自C1-4
烷基、C1-4
烷氧基及鹵基;且Y為鍵聯基團。
當縮合穩定基團為醇之殘基時,該基團可在合成聚合物期間(例如,在醇溶劑中聚合單體或在非醇溶劑中聚合單體且隨後將聚合物轉移至醇溶劑中)或在調配含有聚合物之抗反射塗覆組合物期間藉由使用作為組合物部分之醇溶劑而引入。
當縮合穩定基團為式R1
R2
R3
SiR4
或(R12
)3
Si-Y-Si(R12
)3
之化合物時,該化合物可與聚合物反應,藉以現由Si-OR置換Si-OH基團。
烷基、烯基、環烷基、芳基、烷氧基、醯氧基及芳氧基可未經取代或經取代。適合取代基包括在本發明之背景下不改變該等基團之性質之取代基,諸如鹵素原子(例如氟、氯、溴、碘)、羥基、烷氧基、巰基、烷基巰基、硝基、亞硝基、氰基、硫氧基及其類似基團。烷基之實例包括甲基、丁基、異戊基及其類似基團,烯基為(諸如)乙烯基、烯丙基及其類似基團,環烷基為(諸如)環己基、環戊基、金剛烷基及其類似基團,烷氧基為(諸如)甲氧基、乙氧基、羥基乙氧基、丙氧基、羥基丙氧基、正丁氧基、異丁氧基、第二丁氧基及第三丁氧基,芳基為(諸如)苯基,芳氧基為(諸如)苯氧基,且醯氧基為(諸如)乙醯氧基。
環氧官能基之實例包括(3-縮水甘油氧基丙基)三甲氧基
矽烷、(3-縮水甘油氧基丙基)三乙氧基矽烷、(3-縮水甘油氧基丙基)三丙氧基矽烷、3-縮水甘油氧基丙基三(2-甲氧基乙氧基)矽烷、2,3-環氧基丙基三乙氧基矽烷、3,4-環氧基丁基三乙氧基矽烷、4,5-環氧基戊基三乙氧基矽烷、5,6-環氧基己基三乙氧基矽烷、5,6-環氧基己基三甲氧基矽烷、2-(3,4-環氧基環己基)乙基三乙氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷、4-(三甲氧基矽烷基)丁烷-1,2-環氧化物。酐官能基之實例包括3-(三乙氧基矽烷基)丙基丁二酸酐、3-(三甲氧基矽烷基)丙基丁二酸酐、3-(甲基二甲氧基矽烷基)丙基丁二酸酐及3-(甲基二乙氧基矽烷基)丙基丁二酸酐。
鍵聯基團Y可選自伸烷基、-O-伸烷基-O-、伸烷基-O-伸烷基、伸烷基-ZiC(=O)Z2
-伸烷基及-O-伸烷基-Z1
C(=O)Z2
-伸烷基-O-,其中Z1
及Z2
係各自選自直接鍵或-O-。(R12
)3
Si-Y-Si(R12
)3
之實例包括雙(三乙氧基矽烷基)乙烷、2,2-雙(烯丙氧基甲基)-1-三甲基矽烷氧基丁烷、2,2-雙(3-三乙氧基矽烷基丙氧基甲基)-1-三甲基矽烷氧基丁烷、3,3-雙(三氯矽烷基丙氧基甲基)-5-氧雜-三癸烷及1,3-雙(3-三氯矽烷基丙氧基)-2-癸氧基丙烷。
在一些情況下,芳基將充當發色團,且其可包括(但不限於)未經取代及經取代茀、伸乙烯基伸苯基、蒽、苝、苯基、苄基、查耳酮(chalcone)、鄰苯二甲醯亞胺、雙羥萘酸、吖啶、偶氮化合物、二苯并呋喃,其任何衍生物;噻吩、蒽、萘、苯、查耳酮、鄰苯二甲醯亞胺、雙羥萘
酸、吖啶、偶氮化合物、菄、芘、螢蒽(fluoranthrene)、蒽酮(anthrone)、二苯甲酮、n噸酮(thioxanthone)、含有選自氧、氮、硫之雜原子之雜環芳族環及其組合,以及上述物質之衍生物。
本發明之組合物通常係根據已知程序及方法來製備。一實例為藉由將抗反射塗層組份溶解於適合溶劑(諸如二醇醚(諸如乙二醇單甲醚、丙二醇單甲醚)或醇)中而製備之抗反射塗覆組合物。通常抗反射塗覆組合物之固體含量在抗反射塗覆組合物之總重量之1重量%與35重量%之間改變。可使用熟習此項技術者熟知之技術(諸如浸漬、旋塗或噴霧)將組合物塗覆於基板上。抗反射塗層之膜厚度在約0.01 μm至約1 μm之範圍內。塗層可在加熱板或對流烘箱上或由其他熟知加熱方法加熱以移除任何殘餘溶劑且誘發交聯(必要時),且使抗反射塗層不溶以防止抗反射塗層與光阻劑之間的相互混合。
存在兩種類型(負型及正型)之光阻劑組合物。當負型光阻劑組合物經受輻射成像曝光時,經輻射曝光之光阻劑組合物區域變得較不易溶於顯影劑溶液中(例如發生交聯反應),而光阻劑塗層之未曝光區域仍相對可溶於此溶液中。因此,用顯影劑處理經曝光負型光阻劑導致光阻劑塗層之未曝光區域被移除且在塗層中產生負影像,藉此露出光阻劑組合物沈積於其上之下伏基板表面之所需部分。
另一方面,當正型光阻劑組合物經受輻射成像曝光時,經輻射曝光之光阻劑組合物之彼等區域變得較易溶於顯影
劑溶液中(例如發生重排反應),而未曝光之彼等區域仍相對不溶於顯影劑溶液中。因此,用顯影劑處理經曝光正型光阻劑導致塗層之經曝光區域被移除且在光阻劑塗層中產生正影像。同樣,露出下伏表面之所需部分。
熟習此項技術者熟知負型光阻劑及正型光阻劑組合物及其用途。
在三層光阻劑處理過程中,以與傳統雙層光阻劑過程中相同之方式,將形成底塗層之物質塗佈於位於支撐基板上之可加工基板(或膜)上以形成底塗層。隨後在該底塗層上形成含矽中間層,且在該中間層上形成單層光阻劑層。隨後,將光阻劑層之預定區域曝光。藉由隨後之PEB及顯影,形成圖案化光阻劑層。進行進一步加工,例如,使用圖案化光阻劑層作為遮罩且蝕刻中間層,移除圖案化光阻劑層,藉由使用圖案化中間層作為遮罩來蝕刻底塗層,且隨後移除圖案化中間層,其後藉由蝕刻來加工可加工基板。
本發明之方法包含用本發明之組合物塗覆基板且在加熱板或對流烘箱上或由其他熟知加熱方法在足夠溫度下將該基板加熱足夠長時間以移除塗覆溶劑,且將聚合物交聯至足夠程度以使得塗層不溶於光阻劑之塗覆溶液中或水性鹼性顯影劑中。此外,塗層應在固化期間充分交聯以防止聚合物塗層與光阻劑之塗覆溶液之間的任何相互混合或擴散。可使用此項技術中熟知之方法應用光阻洗邊液來清潔基板之邊緣。加熱溫度範圍為約70℃至約250℃。若溫度
低於70℃,則可能發生不充分溶劑損失或不充分交聯量,而在高於250℃之溫度下,聚合物可能變得化學不穩定。隨後將光阻劑組合物之膜塗覆於抗反射塗層之頂部上且烘焙以大體上移除光阻劑溶劑。將光阻劑成像曝光且在水性顯影劑中顯影以移除經處理光阻劑。可將一可選加熱步驟在顯影之前及曝光之後併入該方法中。熟習此項技術者熟知塗覆光阻劑及使光阻劑成像之方法且針對所用特定光阻劑類型將該等方法最優化。隨後可將圖案化基板在適合蝕刻腔室中進行乾式蝕刻以移除抗反射膜之曝光部分,其中剩餘光阻劑充當蝕刻遮罩。
以下特定實例將提供製造且使用本發明之組合物之方法的詳細說明。然而,該等實例並非意欲限制以任何方式限制或限定本發明之範疇且不應將其理解為提供為實施本發明而必須專有使用之條件、參數或值。
向配備有磁性攪拌器、溫度計及冷凝器之250 mL三頸圓底燒瓶中饋入35.00 g2-(3,4-環氧基環己基)乙基三甲氧基矽烷(142 mmol)、8.50g苯基三甲氧基矽烷(43mmol)及4.50 g甲基三甲氧基矽烷(33 mmol)。向該燒瓶中添加7.90 g去離子水、2.00 g乙酸及45 g THF之混合物。將混合物加熱至回流且在彼溫度下保持3小時。隨後,將該混合物冷卻至室溫。在減壓下移除溶劑,得到45.78 g無色液體樹脂。使用聚苯乙烯作為參考,藉由凝膠滲透層析法測定,重量平均分子量為約2,430 g/mol。FT-IR指示存在羥基。
向配備有磁性攪拌器、溫度計及冷凝器之250 mL三頸圓底燒瓶中饋入32.10 g實例1中製備之倍半氧矽烷樹脂、16.00 g三乙胺及16 mL THF。向此混合物中逐滴添加147 mL三甲基氯矽烷(於四氫呋喃中之1.0 M三甲基氯矽烷)且將混合物保持在10℃以下。在添加完成後,將該混合物加熱至回流且將彼溫度保持4小時。將混合物冷卻至室溫且過濾。在減壓下移除溶劑。將所回收油溶解於100 mL甲苯中且用去離子水(2×100 mL)洗滌有機相。將有機層乾燥,過濾,且在減壓下移除溶劑。獲得26.77 g液體樹脂。使用聚苯乙烯作為參考,藉由凝膠滲透層析法測定,重量平均分子量為約3,380 g/mol。FT-IR指示在此改質樹脂中幾乎不存在羥基峰。
將來自實例1及實例2之聚合物樣品置於20 mL小瓶中且置於通風櫥中,在室溫下對大氣開放。3個月後,對其觀察發現實例1聚合物膠凝且不再可溶於常見有機溶劑中。與之相反,實例2聚合物未膠凝且易溶於常見有機溶劑中。
向配備有磁性攪拌器、溫度計及冷凝器之250 mL三頸圓底燒瓶中饋入28.00 g甲基丙烯酸3-(三甲氧基矽烷基)丙酯(113 mmol)、6.50 g苯基三甲氧基矽烷(33 mmol)及2.00 g甲基三甲氧基矽烷(15 mmol)。向該燒瓶中添加4.40 g去離子水、1.50 g乙酸及14.10 g異丙醇之混合物。將混合物加
熱至回流且在彼溫度下保持1.5小時。隨後,將該混合物冷卻至室溫。在減壓下移除溶劑,得到28.86 g無色液體樹脂。使用聚苯乙烯作為參考,藉由凝膠滲透層析法測定,重量平均分子量為約2,920 g/mol。FT-IR指示存在羥基。
向配備有磁性攪拌器、溫度計及冷凝器之100 mL三頸圓底燒瓶中饋入5.00 g六甲基二矽氧烷、0.50g鹽酸及5.00g無水乙醇。將混合物攪拌且加熱至約70℃。向此混合物中逐滴添加10.00 g實例3中製備之倍半氧矽烷樹脂。在添加完成後,將溫度在回流下保持兩小時。隨後,將混合物冷卻至室溫且添加50 mL甲苯。依次用飽和碳酸氫鈉(50 mL)及去離子水(2×50 mL)洗滌有機相。將有機層乾燥,過濾,且在減壓下移除溶劑。獲得7.82 g液體樹脂。FT-IR指示在此改質樹脂中幾乎不存在羥基峰。
將12 g矽氧烷聚合物溶液[獲自Braggone Oy,Finland,#102227,其更充分描述於美國專利申請案60/813,266中,該文獻之內容係以引用的方式併入本文中。該聚合物之合成程序如下:將苯基三甲氧基矽烷(1.60 g,5 mol%)、四乙氧基矽烷(26.81 g,80 mol%)及菲-9-三乙氧基矽烷(8.24 g,15 mo1%)稱入一圓底燒瓶中。將73.3 g丙酮添加至該圓底燒瓶中。在5分鐘內將10.75 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫(RT)下攪拌27分鐘且使用電熱罩
回流5小時。在回流後,使用旋轉蒸發儀(壓力350->250毫巴(mbar),t(浴)=50℃)將大部分丙酮自反應混合物移除。在移除大部分丙酮後,將72 g PGMEA添加至燒瓶中。在添加PGMEA後,將反應混合物在旋轉蒸發儀(壓力45 mbar,t(浴)=50℃,1小時)中進一步蒸發以進行溶劑交換。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGMEA)至20%固體含量且使用0.1 μm PTFE過濾器過濾。]與17.33 g PGMEA混合。用0.2 μm膜過濾器過濾混合溶液。藉由在1300 rpm下旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒。藉由J.A.WoollamVUV VASE光譜式橢偏儀量測光學常數(折射率(n)及吸收參數(k))及膜厚度。在100 nm之膜厚度下,折射率(n)為1.60且吸收參數(k)為0.25。
將6.5 g聚合物溶液[獲自Braggone Oy,Finland,#102267,其更充分描述於美國專利申請案60/813,266,該文獻之內容係以引用的方式併入本文中。該聚合物之合成程序如下:將苯基三甲氧基矽烷(4.80 g,5 mol%)、四乙氧基矽烷(85.47 g,85 mol%)及菲-9-三乙氧基矽烷(16.47 g,10 mo1%)稱入一圓底燒瓶中。將213.48 g丙酮添加至該圓底燒瓶中。在4分鐘內將33.48 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌26分鐘且使用電熱罩回流
5小時。在回流後,使用旋轉蒸發儀(壓力400->200 mbar,t(浴)=50℃)將大部分丙酮自反應混合物移除。在移除大部分丙酮後,將105 g PGMEA添加至燒瓶中。在添加PGMEA後,將反應混合物在旋轉蒸發儀(壓力45 mbar,t(浴)=50℃,1小時)中進一步蒸發以進行溶劑交換。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGMEA)至20%固體含量且使用0.1 μm PTFE過濾器過濾。]與9.29 g PGMEA及6.21 g PGME混合。用0.2 μm膜過濾器過濾混合溶液。藉由在2300 rpm下旋塗將過濾溶液塗佈於裸矽晶圓上且在250℃下烘焙90秒。藉由J.A.WoollamVUV VASE光譜式橢偏儀量測光學常數(n及k)及膜厚度。在100 nm之膜厚度下,折射率(n)為1.60且吸收參數(k)為0.25。
(a)將835 g聚合物溶液[獲自Braggone Oy,Finland,#102288(與102227相同之組成,僅反應規模較大),其更充分描述於美國專利申請案60/813,266中,該文獻之內容係以引用的方式併入本文中。該聚合物之合成程序如下:將苯基三甲氧基矽烷(80 g,5 mol%)、四乙氧基矽烷(1340.5 g,80 mol%)及菲-9-三乙氧基矽烷(412 g,15 mol%)稱入一圓底燒瓶中。將3665.0 g丙酮添加至該圓底燒瓶中。在5分鐘內將550.74 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合
物在室溫下攪拌27分鐘且使用電熱罩回流5小時。在回流後,使用旋轉蒸發儀(壓力350->250 mbar,t(浴)=50℃)將大部分丙酮自反應混合物移除。在移除大部分丙酮後,將600 g PGMEA添加至燒瓶中。在添加PGMEA後,將反應混合物在旋轉蒸發儀(壓力45 mbar,t(浴)=50℃,1小時)中進一步蒸發以進行溶劑交換。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGMEA)至20%固體含量且使用0.1 μm PTFE過濾器過濾。]與2715.1 gPGMEA及1449.0 g PGME混合。將混合溶液精細過濾。將過濾溶液分入1公升Now-Pak容器中且密封。將經填充容器在溫度設定為40℃之水浴中儲存8天。
(b)將835 g聚合物溶液(獲自Braggone Oy,Finland,#102288)與4164.1 g PGMEA混合。將混合溶液精細過濾。將過濾溶液分入1公升Now-Pak容器中且密封。將經填充容器在溫度設定為40℃之水浴中儲存8天。
使用來自Rion之KS41液體粒子計數器(LPC)監控(a)及(b)中溶液之粒子計數(0.2 μm及0.3 μm粒子),歷時8天。溶液(a)具有比溶液(b)數目少6至10倍之LPC計數。
將矽基板塗覆實例5之溶液且在250℃下烘焙90秒。烘焙膜具有110 nm之膜厚度。將光阻劑溶液AZAX2110P(獲自AZ Electronic Materials,Somerville,New Jersey)塗覆於該烘焙膜之上。調節旋轉速度以使得光阻劑膜厚度為130
nm。將塗覆晶圓在100℃下軟烘焙60秒。將塗覆晶圓在與TELACT 12軌道連接之Nikon 306D 193 nm掃描儀上曝光;NA為0.85;照明,Y-偶極,6%衰減相移主光罩。隨後將曝光晶圓在110℃下曝光後烘焙60秒。將膜在0.26 NTMAH水溶液中顯影30秒。使用SEM來分析成像光阻劑特徵。針對80 nm L/S及75 nm L/S觀測線及空間光阻劑特徵。
(a)將聚合物溶液[由Braggone Oy,Finland製造,#102288(與102227相同之組成,僅反應規模較大),其更充分描述於美國專利申請案60/813,266中,該文獻之內容係以引用的方式併入本文中。該聚合物之合成程序如下:將苯基三甲氧基矽烷(80 g,5 mol%)、四乙氧基矽烷(1340.5 g,80 mol%)及菲-9-三乙氧基矽烷(412 g,15 mol%)稱入一圓底燒瓶中。將3665.0 g丙酮添加至該圓底燒瓶中。在5分鐘內將550.74 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌27分鐘且使用電熱罩回流5小時。在回流後,使用旋轉蒸發儀(壓力350->250 mbar,t(浴)=50℃)將大部分丙酮自反應混合物移除。在移除大部分丙酮後,將600 g PGMEA添加至燒瓶中。在添加PGMEA後,將反應混合物在旋轉蒸發儀(壓力45 mbar,t(浴)=50℃,1小時)中進一步蒸發以進行溶劑交換。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋
及過濾後即可使用。將該物質稀釋(藉由添加PGMEA)至25%固體含量。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後不存在烷氧基,僅存在羥基。
(b)將聚合物溶液[由Braggone Oy,Finland製造,#102288(與102227相同之組成,僅反應規模較大),其更充分描述於美國專利申請案60/813,266中,該文獻之內容係以引用的方式併入本文中。該聚合物之合成程序如下:將苯基三甲氧基矽烷(80 g,5 mol%)、四乙氧基矽烷(1340.5 g,80 mol%)及菲-9-三乙氧基矽烷(412 g,15 mol%)稱入一圓底燒瓶中。將3665.0 g丙酮添加至該圓底燒瓶中。在5分鐘內將550.74 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌27分鐘且使用電熱罩回流5小時。在回流後,使用旋轉蒸發儀(壓力350->250 mbar,t(浴)=50℃)將大部分丙酮自反應混合物移除。在移除大部分丙酮後,將600 g PGMEA添加至燒瓶中。在添加PGMEA後,將反應混合物在旋轉蒸發儀(壓力45 mbar,t(浴)=50℃,1小時)中進一步蒸發以進行溶劑交換。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGMEA)至20%固體含量且使用0.1 μm PTFE過濾器過濾。在添加PGMEA後,將物質溶液由PGME進一步稀釋以產生11%最終固體含量及1:1 PGMEA:PGME溶液。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後不存在烷氧基,
僅存在羥基。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒。藉由J.A.WoollamVUV VASE光譜式橢偏儀量測光學常數(折射率(n)及吸收參數(k))及膜厚度。在100 nm之膜厚度下,折射率(n)為1.61且吸收參數(k)為0.27。
(c)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(13.10 g,5 mol%)、四乙氧基矽烷(219.99 g,80 mol%)及菲-9-三乙氧基矽烷(67.58 g,15 mol%)稱入一圓底燒瓶中。將300.66 g PGME添加至該圓底燒瓶中。在5分鐘內將90.29 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行溶劑交換程序(添加203 g PGME)。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGME)至20%固體含量且使用0.1 μm PTFE過濾器過濾。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後存在烷氧基與羥基。如由NMR所測定,羥基與烷氧基之比率為3:1。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒。藉由J.A.WoollamVUV VASE光譜式橢偏儀量測光學常數(折射率(n)及吸收參數(k))及膜厚度。在100 nm之膜厚度下,折射
率(n)為1.61且吸收參數(k)為0.24。
(d)將聚合物溶液[由Braggone Oy,Fin1and製造,其係使用以下程序合成:將苯基三甲氧基矽烷(26.2 g,5 mol%)、四乙氧基矽烷(385.28 g,70 mol%)及菲-9-三乙氧基矽烷(135.16 g,15 mol%)稱入一圓底燒瓶中。將601.36 g PGME添加至該圓底燒瓶中。在5分鐘內將180.58 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行溶劑交換程序(添加413 g PGME)。在溶劑交換後,將物質溶液在120℃下回流1小時且冷卻至室溫。此後添加四乙氧基矽烷(55.05 g,10 mol%)且將物質溶液在120℃下回流1小時。在第二回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGME)至20%固體含量且使用0.1 μm PTFE過濾器過濾。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後存在烷氧基與羥基。如由NMR所測定,羥基與烷氧基之比率為2.5:1。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒,形成具有100 nm之厚度(如藉由J.A.WoollamVUV VASE光譜式橢偏儀所量測)之膜。
(e)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(44.62 g,15 mol%)、四乙氧基矽烷(250.00 g,80 mol%)及菲-9-三乙氧
基矽烷(25.62 g,5 mol%)稱入一圓底燒瓶中。將320.24 gIPA/PGME混合物(1:1)添加至該圓底燒瓶中。在5分鐘內將102.60 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行自IPA/PGME混合物至PGME之溶劑交換程序(添加200 gPGME)。在溶劑交換後,將物質溶液在120℃下回流2小時。在回流後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGME)至20%固體含量且使用0.1 μm PTFE過濾器過濾。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後存在烷氧基與羥基。如由NMR所測定,羥基與烷氧基之比率為4:1。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒。藉由J.A.WoollamVUV VASE光譜式橢偏儀量測光學常數(折射率(n)及吸收參數(k))及膜厚度。在100 nm之膜厚度下,折射率(n)為1.70且吸收參數(k)為0.36。
(f)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(25.05 g,10 mol%)、四乙氧基矽烷(150.00 g,57 mo1%)、菲-9-三乙氧基矽烷(12.95 g,3 mol%)及甲基三乙氧基矽烷(67.57 g,30 mol%)稱入一圓底燒瓶中。將255.57 gPGME添加至該圓底燒瓶中。在5分鐘內將81.16 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此
後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行溶劑交換程序(添加200 g PGME)。在溶劑交換後,將物質溶液在120℃下回流2小時。在回流後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGME)至20%固體含量且使用0.1 μm PTFE過濾器過濾。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後存在烷氧基與羥基。如由NMR所測定,羥基與烷氧基之比率為1.5:1。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒。藉由J.A.WoollamVUV VASE光譜式橢偏儀量測光學常數(折射率(n)及吸收參數(k))及膜厚度。在100 nm之膜厚度下,折射率(n)為1.68且吸收參數(k)為0.21。
(g)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(25.05 g,10 mol%)、四乙氧基矽烷(150.0 g,57 mol%)、菲-9-三乙氧基矽烷(12.95 g,3 mol%)及甲基三乙氧基矽烷(45.05 g,20 mol%)稱入一圓底燒瓶中。將255.57 g PGME添加至該圓底燒瓶中。在5分鐘內將81.16 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行溶劑交換程序(添加204 g PGME)。在溶劑交換後,將物質溶液在120℃下回流1小時且冷卻至室溫。此後添加甲基三乙氧基矽烷(22.52 g,10 mol%)且
將物質溶液在120℃下回流1小時。在第二回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGME)至20%固體含量且使用0.1 μm PTFE過濾器過濾。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後存在烷氧基與羥基。如由NMR所測定,羥基與烷氧基之比率為3:1。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒。藉由J.A.Woollam
VUV VASE
光譜式橢偏儀量測光學常數(折射率(n)及吸收參數(k))及膜厚度。在100 nm之膜厚度下,折射率(n)為1.68且吸收參數(k)為0.21。
(h)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(25.09 g,10 mol%)、四乙氧基矽烷(150.10 g,57 mol%)、菲-9-三乙氧基矽烷(12.93 g,3 mol%)及甲基三乙氧基矽烷(45.09 g,20 mol%)稱入一圓底燒瓶中。將255.57 g PGME添加至該圓底燒瓶中。在5分鐘內將81.43 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行自PGME至PGMEA之溶劑交換程序(添加250 g PGMEA)。在溶劑交換後,將物質溶液在120℃下回流1小時且冷卻至室溫。此後添加甲基三乙氧基矽烷(22.54 g,10 mol%)且將物質溶液在120℃下回流1小時。在第二回流步驟後,該物質在稀釋及過濾後即可使用。將
該物質稀釋(藉由添加PGMEA)至20%固體含量且使用0.1 μm PTFE過濾器過濾。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後存在烷氧基與羥基。如由NMR所測定,羥基與烷氧基之比率為2:1。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒,形成具有100 nm之厚度(如藉由J.A.Woollam
VUV VASE
光譜式橢偏儀所量測)之膜。
(i)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(28.43 g,10 mol%)、四乙氧基矽烷(230.0 g,77 mol%)、菲-9-三乙氧基矽烷(14.69 g,3 mol%)及三乙氧基矽烷(23.55 g,10 mol%)稱入一圓底燒瓶中。將296.67 gIPA/PGME混合物(1:1)添加至該圓底燒瓶中。在5分鐘內將97.25 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行自IPA/PGME混合物至PGME之溶劑交換程序(添加202 g PGME)。在溶劑交換後,將物質溶液在120℃下回流2小時。在回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGME)至20%固體含量且使用0.1 μm PTFE過濾器過濾。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後存在烷氧基與羥基。如由NMR所測定,羥基與烷氧基之比率為3:1。將聚合物溶液進一步稀釋且使用0.2 μm過濾器
再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒。藉由J.A.Woollam
VUV VASE
光譜式橢偏儀量測光學常數(折射率(n)及吸收參數(k))及膜厚度。在100 nm之膜厚度下,折射率(n)為1.68且吸收參數(k)為0.26。
來自(a)至(i)之聚合物係獲自Braggone Oy,Finland。
使(a)至(i)之溶液樣品在40℃下老化7天。將(b)至(i)之未老化樣品塗覆於矽晶圓上,在240℃下烘焙60秒以形成具有80 nm至130 nm之厚度之膜。在老化後,亦將(a)至(i)之樣品塗覆於矽晶圓上,在240℃下烘焙60秒以形成具有80 nm至130 nm之厚度之膜。藉由SEM來評估塗覆晶圓(來自未老化樣品與老化樣品)。在老化後,樣品(a)、(b)及(h)具有比其他樣品大之凹坑形成。
(a)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(8.39 g,5 mol%)、四乙氧基矽烷(140.86 g,80 mol%)及菲-9-三乙氧基矽烷(43.27 g,15 mol%)稱入一圓底燒瓶中。將192.51 g PGME添加至該圓底燒瓶中。在5分鐘內將57.81 g水(0.01 M HC1)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行自PGME至PGME之溶劑交換程序(添加230 g PGME)。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質
在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGME)至20%固體含量且使用0.1 μm PTFE過濾器過濾。使用PnP(丙二醇丙醚)將此溶液進一步稀釋以得到11%溶液(1:1,PGME:PnP)。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後存在烷氧基與羥基。如由NMR所測定,羥基與烷氧基之比率為3:1。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒,形成具有100 nm之厚度(如藉由J.A.Woollam
VUV VASE
光譜式橢偏儀所量測)之膜。
(b)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(8.39 g,5 mol%)、四乙氧基矽烷(140.86 g,80 mol%)及菲-9-三乙氧基矽烷(43.27 g,15 mol%)稱入一圓底燒瓶中。將192.51 g PGME添加至該圓底燒瓶中。在5分鐘內將57.81 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行自PGME至PGME之溶劑交換程序(添加230 g PGME)。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGME)至20%固體含量且使用0.1 μmPTFE過濾器過濾。使用NPA(乙酸正丙酯)將此溶液進一步稀釋以得到11%溶液(1:1,PGME:NPA)。]使用H-NMR進行特性測定。H-NMR
量測結果指示在合成後存在烷氧基與羥基。如由NMR所測定,羥基與烷氧基之比率為3:1。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒,形成具有100 nm之厚度(如藉由J.A.Woollam
VUV VASE
光譜式橢偏儀所量測)之膜。
(c)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(8.39 g,5 mol%)、四乙氧基矽烷(140.86 g,80 mol%)及菲-9-三乙氧基矽烷(43.27 g,15 mol%)稱入一圓底燒瓶中。將192.51 g PGME添加至該圓底燒瓶中。在5分鐘內將57.81 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行自PGME至PGME之溶劑交換程序(添加230 g PGME)。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGME)至20%固體含量且使用0.1 μm PTFE過濾器過濾。使用NBA(乙酸正丁酯)將此溶液進一步稀釋以得到11%溶液(1:1,PGME:NBA)。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後存在烷氧基與羥基。如由NMR所測定,羥基與烷氧基之比率為3:1。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒,形成具有100 nm之
厚度(如藉由J.A.Woollam
VUV VASE
光譜式橢偏儀所量測)之膜。
(d)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(13.10 g,5 mol%)、四乙氧基矽烷(220.00 g,80 mol%)及菲-9-三乙氧基矽烷(67.58 g,15 mol%)稱入一圓底燒瓶中。將601.32 g丙酮添加至該圓底燒瓶中。在5分鐘內將90.29 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行自丙酮至PGMEA之溶劑交換程序(添加380 g PGMEA)。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGMEA)至20%固體含量且使用0.1 μm PTFE過濾器過濾。使用PnP將此溶液進一步稀釋以得到11%溶液(1:1,PGME:PnP)。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後不存在烷氧基,僅存在羥基。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒,形成具有100 nm之厚度(如藉由J.A.Woollam
VUV VASE
光譜式橢偏儀所量測)之膜。
(e)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(13.10 g,5 mol%)、四乙氧基矽烷(220.00 g,80 mol%)及菲-9-三乙氧
基矽烷(67.58 g,15 mol%)稱入一圓底燒瓶中。將601.32 g丙酮添加至該圓底燒瓶中。在5分鐘內將90.29 g水(0.01 M HCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行自丙酮至PGMEA之溶劑交換程序(添加380 g PGMEA)。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGMEA)至20%固體含量且使用0.1 μm PTFE過濾器過濾。使用NPA將此溶液進一步稀釋以得到11%溶液(1:1,PGME:NPA)。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後不存在烷氧基,僅存在羥基。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒,形成具有100 nm之厚度(如藉由J.A. Woollam
VUV VASE
光譜式橢偏儀所量測)之膜。
(f)將聚合物溶液[由Braggone Oy,Finland製造,其係使用以下程序合成:將苯基三甲氧基矽烷(13.10 g,5 mol%)、四乙氧基矽烷(220.00 g,80 mol%)及菲-9-三乙氧基矽烷(67.58 g,15 mol%)稱入一圓底燒瓶中。將601.32 g丙酮添加至該圓底燒瓶中。在5分鐘內將90.29 g水(0.01 MHCl)添加至反應燒瓶中,同時使用磁性攪拌器持續攪拌反應混合物。此後,將反應混合物在室溫下攪拌15分鐘且使用電熱罩回流5小時。在回流後進行自丙酮至PGMEA之溶
劑交換程序(添加380 g PGMEA)。在溶劑交換後,將物質溶液在120℃下回流2小時。在2小時回流步驟後,該物質在稀釋及過濾後即可使用。將該物質稀釋(藉由添加PGMEA)至20%固體含量且使用0.1 μm PTFE過濾器過濾。使用NBA將此溶液進一步稀釋以得到11%溶液(1:1,PGME:NBA)。]使用H-NMR進行特性測定。H-NMR量測結果指示在合成後不存在烷氧基,僅存在羥基。將聚合物溶液進一步稀釋且使用0.2 μm過濾器再次過濾。藉由旋塗將過濾溶液塗佈於矽晶圓上且在250℃下烘焙90秒,形成具有100 nm之厚度(如藉由J.A.Woollam
VUV VASE
光譜式橢偏儀所量測)之膜。
將(a)至(f)中之每一者之樣品使用0.2 μm過濾器過濾且隨後分為兩份:一份儲存在5℃下;另一份儲存在40。C下7天。7天後,將5℃及40℃儲存樣品之樣品塗覆於矽晶圓上(在ACT-12上2500 rpm,在240℃下烘焙60秒)。隨後評估晶圓。
將樣品10(a)至10(e)與樣品9(a)進行比較。
樣品9(a)展示大於50%之分子量增加(如由GPC所量測)。樣品10(a)、10(b)及10(c)展示幾乎無分子量增加(如由GPC所量測)。樣品9(a)具有比樣品10(a)、10(b)或10(c)大之凹坑形成。與樣品9(a)相比,樣品10(d)、10(e)及10(f)具有較少數目之凹坑,但樣品10(d)、10(e)及10(f)具有比樣品10(a)、10(b)及10(c)數目多之凹坑。樣品10(d)具有最小分子量改變,而樣品10(e)及10(f)具有最大分子量改變。
本發明之前述描述說明且描述本發明。另外,本揭示案僅展示且描述某些本發明實施例,但如上所述,應瞭解本發明能夠用於各種其他組合、更改及環境中且能夠在如本文中所述之本發明概念之範疇內改變或更改,其與上述教示及/或相關技術之技能或知識相匹配。上文所述實施例此外意欲解釋已知實施本發明之最佳模式且使熟習此項技術者能夠在該等或其他實施例中且在本發明之特定應用或用途所需之各種更改下使用本發明。因此,該描述並非意欲將本發明限制為本文中所揭示之形式。此外,希望將隨附申請專利範圍理解為包括替代性實施例。
Claims (16)
- 一種聚合物,其包含具有至少一個Si-OH基團及至少一個Si-OR基團之矽氧烷聚合物,其中R為視情況具有反應性官能基之縮合穩定基團,其中當將該矽氧烷聚合物以20重量%固體置於丙二醇單甲醚溶劑中時,在40℃下老化一週後如由GPC所量測,其具有小於或等於50%之重量平均分子量增加,且其中該矽氧烷聚合物包含M型、D型、T型及Q型單元,使得至少一個三官能矽氧烷T型單元以及一個四官能矽氧烷Q型單元存在,其中Ra 、Rb 及Rc 係選自由烴基、環氧官能基及酐官能基組成之群,且R10 係選自由烷基、烯基、炔基、環烷基、芳基、烷芳基、芳烷基、(烷基)丙烯酸酯基、(烷基)丙烯醯氧基烷基、(烷基)丙烯醯氧基烯基、環氧官能基及酐官能基組成之群;
- 如請求項1之聚合物,其中該縮合穩定基團係衍生自選自於以下化合物所組成之群:(i)R1 R2 R3 SiR4 以及(ii)(R12 )3 Si-Y-Si(R12 )3 ,其中R1 、R2 、R3 及R4 中之每一者係個別地選自由氫、鹵基、C1-10 烷基、C2-4 烯基、C3-10 環烷基、芳基、C1-10 烷氧基、醯氧基、芳氧基、矽烷氧基、矽烷氧基矽烷基及NR8 R9 所組成之群,其中R8 及R9 中之每一者係選自C1-10 烷基及ON=CR6 R7 ,其中R6 及R7 係各自個別地選自由氫及C1-10 烷基所組成之群,或其中R6 及R7 連同其所結合之碳原子一起形成C3-6 環烷基環;且進一步其中各R12 係個別地選自由C1-4 烷基、C1-4 烷氧基及鹵基所組成之群;且其中Y為鍵聯基團。
- 如請求項2之聚合物,其中該化合物具有式(R12 )3 Si-Y-Si(R12 )3 ,其中各R12 係個別地選自由C1-4 烷基、C1-4 烷氧基及鹵基所組成之群;且Y為鍵聯基團。
- 如請求項3之聚合物,其中Y係選自由伸烷基、-O-伸烷基-O-、伸烷基-O-伸烷基、伸烷基-Z1 C(=O)Z2 -伸烷基及-O-伸烷基-Z1 C(=O)Z2 -伸烷基-O-所組成之群,其中Z1 及Z2 係各自選自直接鍵或-O-。
- 如請求項1之聚合物,其中該等Si-OH基團與該等Si-OR基團係以約1:5至約5:1之比率存在。
- 一種製造如請求項1之穩定化聚合物之方法,其包含以下步驟:形成具有至少一個Si-OH基團之矽氧烷聚合物;且使該等Si-OH基團中之至少一者(但非全部)的Si- OH基團與能夠提供視情況具有反應性官能基之縮合穩定基團之化合物反應,其中當將該穩定化聚合物以20重量%固體置於丙二醇單甲醚溶劑中時,在40℃下老化一週後如由GPC所量測,其具有小於或等於50%之重量平均分子量增加。
- 一種抗反射塗覆組合物,其包含:a)聚合物,包含具有至少一個Si-OH基團及至少一個Si-OR基團之矽氧烷聚合物,其中R為視情況具有反應性官能基之縮合穩定基團,其中當將該矽氧烷聚合物以20重量%固體置於丙二醇單甲醚溶劑中時,在40℃下老化一週後如由GPC所量測,其具有小於或等於50%之重量平均分子量增加;及b)溶劑;其中該聚合物具有至少一個Si-OH基團及至少一個Si-OR基團,其中R為視情況具有反應性官能基之縮合穩定基團,其中該縮合穩定基團R係藉由將該聚合物與一化合物反應而取代一些(但非全部)的Si-OH基團而被引入,該化合物係選自由三甲氧基矽烷、三乙氧基矽烷、甲基二甲氧基矽烷、乙基二乙氧基矽烷、甲基二甲氧基氯矽烷、甲基甲氧基二氯矽烷、二苯基二氯矽烷、二甲基第三丁基氯矽烷、二甲基甲氧基氯矽烷、甲基二甲氧基氯矽烷、乙基甲氧基二氯矽烷、二乙基甲氧基氯矽烷、四甲氧基矽烷、四乙氧基矽烷、四正丙氧基矽烷、四異丙氧基矽烷、四正丁氧基矽烷、甲基三甲氧基矽烷、甲基 三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、正丙基三甲氧基矽烷、正丙基三乙氧基矽烷、異丙基三甲氧基矽烷、異丙基三乙氧基矽烷、正丁基三甲氧基矽烷、正丁基三乙氧基矽烷、正戊基三甲氧基矽烷、正己基三甲氧基矽烷、正庚基三甲氧基矽烷、正辛基三甲氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、環己基三甲氧基矽烷、環己基三乙氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、3-氯丙基三甲氧基矽烷、3-氯丙基三乙氧基矽烷、3,3,3-三氟丙基三甲氧基矽烷、3,3,3-三氟丙基三乙氧基矽烷、2-羥基乙基三甲氧基矽烷、2-羥基乙基三乙氧基矽烷、2-羥基丙基三甲氧基矽烷、2-羥基丙基三乙氧基矽烷、3-羥基丙基三甲氧基矽烷、3-羥基丙基三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、3-巰基丙基三乙氧基矽烷、3-異氰酸酯基丙基三甲氧基矽烷、3-異氰酸酯基丙基三乙氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷、2-(3,4-環氧基環己基)乙基-三乙氧基矽烷、(3-縮水甘油氧基丙基)三丙氧基矽烷、3-縮水甘油氧基丙基三(2-甲氧基乙氧基)矽烷、2,3-環氧基丙基三乙氧基矽烷、3,4-環氧基丁基三乙氧基矽烷、4,5-環氧基戊基三乙氧基矽烷、5,6-環氧基己基三乙氧基矽烷、5,6-環氧基己基三甲氧基矽烷、4-(三甲氧基矽烷基)丁烷-1,2-環氧化物、3-(三乙氧基矽烷基)丙基丁二酸酐、3-(三甲氧基矽烷基)丙 基丁二酸酐、3-(甲基二甲氧基矽烷基)丙基丁二酸酐、3-(甲基二乙氧基矽烷基)丙基丁二酸酐、3-脲基丙基三甲氧基矽烷、3-脲基丙基三乙氧基矽烷、二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、二正丙基二甲氧基矽烷、二正丙基二乙氧基矽烷、二異丙基二甲氧基矽烷、二異丙基二乙氧基矽烷、二正丁基二甲氧基矽烷、二正丁基二乙氧基矽烷、二正戊基二甲氧基矽烷、二正戊基二乙氧基矽烷、二正己基二甲氧基矽烷、二正己基二乙氧基矽烷、二正庚基二甲氧基矽烷、二正庚基二乙氧基矽烷、二正辛基二甲氧基矽烷、二正辛基二乙氧基矽烷、二正環己基二甲氧基矽烷、二正環己基二乙氧基矽烷、二苯基二甲氧基矽烷、二苯基二乙氧基矽烷、甲基三乙醯氧基矽烷、二甲基二乙醯氧基矽烷、N-(3-三乙氧基矽烷基丙基)-4-羥基丁醯胺、3-(三乙氧基矽烷基丙基)-對硝基苯甲醯胺、三乙氧基矽烷基丙基乙基胺基甲酸酯、乙烯基參(甲基乙基酮肟基)矽烷、乙烯基甲基-雙(甲基乙基酮肟基)矽烷、肆(甲基乙基酮肟基)矽烷、苯基參(甲基乙基酮肟基)矽烷、二苯基雙(甲基乙基酮肟基)矽烷、二甲基雙(甲基乙基酮肟基)矽烷、甲基參(甲基乙基酮肟基)矽烷、2-羥基-4-(3-三乙氧基矽烷基丙氧基)-二苯基酮及2-羥基-4-(3-甲基二乙氧基矽烷基丙氧基)二苯基酮、雙(三乙氧基矽烷基)乙烷、2,2-雙(烯丙氧基甲基)-1-三甲基矽烷氧基丁烷、2,2-雙(3-三乙氧基矽烷基丙氧基甲基)- 1-三甲基矽烷氧基丁烷、3,3-雙(三氯矽烷基丙氧基甲基)-5-氧雜-三癸烷及1,3-雙(3-三氯矽烷基丙氧基)-2-癸氧基丙烷及其混合物所組成之群。
- 如請求項7之抗反射塗覆組合物,其中對於b)而言,該溶劑為醇。
- 如請求項7之抗反射塗覆組合物,其中該等Si-OH基團與該等Si-OR基團係以約1:5至約5:1之比率存在。
- 如請求項7之抗反射塗覆組合物,其中該等Si-OH基團與該等Si-OR基團係以約1:5至約1:1之比率存在。
- 一種形成光阻劑凸版影像之方法,其包含:在基板上塗佈如請求項7之組合物之層;在如請求項7之組合物之該層之頂部上塗佈化學放大型光阻劑組合物之層;將該等層成像曝光於光化輻射;後曝光烘烤該基板;及以水性鹼性溶液顯影該光阻層。
- 一種抗反射塗覆組合物,其包含:a)聚合物,包含具有至少一個Si-OH基團及至少一個Si-OR基團之矽氧烷聚合物,其中R為視情況具有反應性官能基之縮合穩定基團,其中當將該矽氧烷聚合物以20重量%固體置於丙二醇單甲醚溶劑中時,在40℃下老化一週後如由GPC所量測,其具有小於或等於50%之重量平均分子量增加;及b)溶劑;其中該矽氧烷聚合物包含M型、D型、T型及Q型單元,使得至少一個三官能矽氧烷T型單元以及一個四官 能矽氧烷Q型單元存在,其中Ra 、Rb 及Rc 係選自由烴基、環氧官能基及酐官能基組成之群,且R10 係選自由烷基、烯基、炔基、環烷基、芳基、烷芳基、芳烷基、(烷基)丙烯酸酯基、(烷基)丙烯醯氧基烷基、(烷基)丙烯醯氧基烯基、環氧官能基及酐官能基組成之群;
- 如請求項12之抗反射塗覆組合物,其中該等三官能矽氧烷單元(T)中至少一個R10 為芳基。
- 如請求項12之抗反射塗覆組合物,其中對於b)而言,該溶劑為醇。
- 如請求項12之抗反射塗覆組合物,其中該等Si-OH基團與該等Si-OR基團係以約1:5至約5:1之比率存在。
- 如請求項12之抗反射塗覆組合物,其中該等Si-OH基團與該等Si-OR基團係以約1:5至約1:1之比率存在。
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TW200844144A (en) | 2008-11-16 |
US20100092895A1 (en) | 2010-04-15 |
US8524441B2 (en) | 2013-09-03 |
CN101622296B (zh) | 2013-10-16 |
KR101523393B1 (ko) | 2015-05-27 |
KR20090116751A (ko) | 2009-11-11 |
WO2008104881A1 (en) | 2008-09-04 |
JP2010519398A (ja) | 2010-06-03 |
EP2121808A1 (en) | 2009-11-25 |
CN101622296A (zh) | 2010-01-06 |
JP2015038221A (ja) | 2015-02-26 |
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