TWI437214B - 光電轉換裝置及具有光電轉換裝置之電子裝置 - Google Patents

光電轉換裝置及具有光電轉換裝置之電子裝置 Download PDF

Info

Publication number
TWI437214B
TWI437214B TW097127970A TW97127970A TWI437214B TW I437214 B TWI437214 B TW I437214B TW 097127970 A TW097127970 A TW 097127970A TW 97127970 A TW97127970 A TW 97127970A TW I437214 B TWI437214 B TW I437214B
Authority
TW
Taiwan
Prior art keywords
transistor
photoelectric conversion
output
electrode
terminal
Prior art date
Application number
TW097127970A
Other languages
English (en)
Chinese (zh)
Other versions
TW200925564A (en
Inventor
Hideaki Shishido
Atsushi Hirose
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW200925564A publication Critical patent/TW200925564A/zh
Application granted granted Critical
Publication of TWI437214B publication Critical patent/TWI437214B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/0204Compact construction
    • G01J1/0209Monolithic
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26Current mirrors
    • G05F3/262Current mirrors using field-effect transistors only
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G09G3/3241Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/71Circuitry for evaluating the brightness variation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0214Manufacture or treatment of multiple TFTs using temporary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026Wafer-level processing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Light Receiving Elements (AREA)
  • Electronic Switches (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
TW097127970A 2007-07-25 2008-07-23 光電轉換裝置及具有光電轉換裝置之電子裝置 TWI437214B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007193015 2007-07-25
JP2007193151 2007-07-25

Publications (2)

Publication Number Publication Date
TW200925564A TW200925564A (en) 2009-06-16
TWI437214B true TWI437214B (zh) 2014-05-11

Family

ID=40281404

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097127970A TWI437214B (zh) 2007-07-25 2008-07-23 光電轉換裝置及具有光電轉換裝置之電子裝置

Country Status (4)

Country Link
US (2) US8154480B2 (enExample)
JP (1) JP5222649B2 (enExample)
TW (1) TWI437214B (enExample)
WO (1) WO2009014155A1 (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8269562B1 (en) * 2006-06-30 2012-09-18 Ixys Ch Gmbh Open-loop transimpedance amplifier for infrared diodes
AU2007334393A1 (en) 2006-12-14 2008-06-26 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR101401528B1 (ko) * 2007-06-29 2014-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전변환장치 및 그 광전변환장치를 구비하는 전자기기
WO2009014155A1 (en) * 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
KR20120059509A (ko) 2009-08-25 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5727204B2 (ja) * 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8759917B2 (en) * 2010-01-04 2014-06-24 Samsung Electronics Co., Ltd. Thin-film transistor having etch stop multi-layer and method of manufacturing the same
US8803063B2 (en) * 2010-02-19 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Photodetector circuit
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
AU2011226767B1 (en) 2010-06-30 2011-11-10 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
US8487790B2 (en) 2010-06-30 2013-07-16 Life Technologies Corporation Chemical detection circuit including a serializer circuit
CN103080739B (zh) 2010-06-30 2016-12-21 生命科技公司 用于测试isfet阵列的方法和装置
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
TWI527245B (zh) 2010-07-03 2016-03-21 生命技術公司 具有微摻雜汲極之化學感測器
EP2617061B1 (en) 2010-09-15 2021-06-30 Life Technologies Corporation Methods and apparatus for measuring analytes
US8685324B2 (en) * 2010-09-24 2014-04-01 Life Technologies Corporation Matched pair transistor circuits
US9209209B2 (en) 2010-10-29 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
JP5925475B2 (ja) * 2010-12-09 2016-05-25 株式会社半導体エネルギー研究所 光検出回路
US9793039B1 (en) 2011-05-04 2017-10-17 The Board Of Trustees Of The University Of Alabama Carbon nanotube-based integrated power inductor for on-chip switching power converters
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
MX2011008907A (es) * 2011-08-24 2013-02-25 Mexicano Inst Petrol Sistema mejorador del patron de flujo de pozos de gas con problemas de carga de liquidos.
JP5529203B2 (ja) * 2011-09-21 2014-06-25 シャープ株式会社 光センサおよび電子機器
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
JP5812959B2 (ja) * 2011-12-15 2015-11-17 キヤノン株式会社 撮像装置
JP5895504B2 (ja) * 2011-12-15 2016-03-30 ソニー株式会社 撮像パネルおよび撮像処理システム
JP5924924B2 (ja) 2011-12-15 2016-05-25 キヤノン株式会社 電子回路
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
WO2014149779A1 (en) 2013-03-15 2014-09-25 Life Technologies Corporation Chemical device with thin conductive element
CN105264366B (zh) 2013-03-15 2019-04-16 生命科技公司 具有一致传感器表面区域的化学传感器
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US9590514B1 (en) * 2013-03-15 2017-03-07 The Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama Carbon nanotube-based integrated power converters
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
JP6384822B2 (ja) * 2013-11-07 2018-09-05 Tianma Japan株式会社 イメージセンサ及びその製造方法
US9312280B2 (en) * 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6598436B2 (ja) * 2014-08-08 2019-10-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
EP4354131A3 (en) 2014-12-18 2024-06-26 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
GB2538258A (en) * 2015-05-12 2016-11-16 Nordic Semiconductor Asa Reference voltages
JP6517664B2 (ja) * 2015-10-28 2019-05-22 浜松ホトニクス株式会社 読み出し回路
US11166008B2 (en) * 2016-01-15 2021-11-02 Comcast Cable Communications, Llc Methods and systems for displaying content
CN108170195B (zh) * 2016-12-07 2020-04-17 矽统科技股份有限公司 源极跟随器
TWI602394B (zh) * 2016-12-07 2017-10-11 矽統科技股份有限公司 源極隨耦器
WO2018235819A1 (ja) * 2017-06-23 2018-12-27 パイオニア株式会社 電磁波検出装置
WO2018235817A1 (ja) * 2017-06-23 2018-12-27 パイオニア株式会社 電磁波検出装置
CN107731952B (zh) * 2017-10-02 2022-11-25 深圳市雷克斯托通信有限公司 雷达传感器
US10374647B1 (en) 2018-02-13 2019-08-06 Texas Instruments Incorporated Adjustable dynamic range signal detection circuit
CN109166892B (zh) * 2018-08-30 2022-11-25 京东方科技集团股份有限公司 Oled显示基板及其制造方法、oled显示面板
EP3683649A1 (en) * 2019-01-21 2020-07-22 NXP USA, Inc. Bandgap current architecture optimized for size and accuracy
CN113327542B (zh) * 2021-05-27 2023-03-31 Tcl华星光电技术有限公司 驱动电路及面板
TWI798767B (zh) * 2021-07-25 2023-04-11 袁知賢 光電轉換元件及其製作方法
CN114485928A (zh) * 2021-08-20 2022-05-13 荣耀终端有限公司 光检测方法、光检测电路、显示屏及电子设备
CN113932919B (zh) * 2021-10-08 2024-07-26 杭州涂鸦信息技术有限公司 环境光检测电路、方法、计算机设备和可读存储介质

Family Cites Families (178)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
USRE34658E (en) 1980-06-30 1994-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device of non-single crystal-structure
JPS57184376A (en) * 1981-05-09 1982-11-13 Sony Corp Signal output circuit of image pickup device
US4466018A (en) * 1981-05-09 1984-08-14 Sony Corporation Image pickup apparatus with gain controlled output amplifier
US4498001A (en) 1982-07-26 1985-02-05 At&T Bell Laboratories Transimpedance amplifier for optical receivers
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
NL194811C (nl) 1986-01-16 2003-03-04 Mitsubishi Electric Corp Servoschakeling.
USRE34769E (en) * 1986-01-16 1994-11-01 Mitsubishi Denki Kabushiki Kaisha Current mirror amplifier for use in an optical data medium driving apparatus and servo-circuit
US5004901A (en) 1987-06-04 1991-04-02 Mitsubishi Denki Kabushiki Kaisha Current mirror amplifier for use in an optical data medium driving apparatus and servo-circuit
JPH0770064B2 (ja) * 1987-06-30 1995-07-31 三菱電機株式会社 記録媒体駆動装置
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
US4896121A (en) * 1988-10-31 1990-01-23 Hughes Aircraft Company Current mirror for depletion-mode field effect transistor technology
JP2836147B2 (ja) 1989-12-21 1998-12-14 ミノルタ株式会社 光電変換装置
US5241575A (en) * 1989-12-21 1993-08-31 Minolta Camera Kabushiki Kaisha Solid-state image sensing device providing a logarithmically proportional output signal
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
US5381146A (en) 1993-07-06 1995-01-10 Digital Equipment Corporation Voltage-tracking circuit and application in a track-and-hold amplifier
IT1264817B1 (it) 1993-07-28 1996-10-10 Ciba Geigy Spa Derivati di polialchil-4-piperidinoli atti all'impderivati di polialchil-4-piperidinoli atti all'impiego come stabilizzanti per materiali organici iego come stabilizzanti per materiali organici
US5473467A (en) 1994-07-08 1995-12-05 At&T Corp. Linear optical amplifier
JPH0888770A (ja) * 1994-09-16 1996-04-02 Toshiba Corp 画像処理装置
JP3203996B2 (ja) * 1994-11-01 2001-09-04 三菱電機株式会社 電流−電圧変換アンプのテスト回路
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法
FR2733098B1 (fr) * 1995-04-11 1997-07-04 Sgs Thomson Microelectronics Amplificateur de courant
JPH08289205A (ja) 1995-04-13 1996-11-01 Nissan Motor Co Ltd 受光素子およびこれを用いた画像入力装置
KR100394896B1 (ko) 1995-08-03 2003-11-28 코닌클리케 필립스 일렉트로닉스 엔.브이. 투명스위칭소자를포함하는반도체장치
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JPH09321548A (ja) * 1996-05-31 1997-12-12 S I I R D Center:Kk 半導体集積回路装置
JP3444093B2 (ja) 1996-06-10 2003-09-08 株式会社デンソー 光センサ回路
JPH1188770A (ja) * 1997-09-03 1999-03-30 Nissan Motor Co Ltd イメージセンサ装置
JP4044187B2 (ja) 1997-10-20 2008-02-06 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
US6287888B1 (en) 1997-12-26 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and process for producing photoelectric conversion device
US6521882B1 (en) 1998-03-27 2003-02-18 Denso Corporation Optical sensor with directivity controlled
JP3783451B2 (ja) * 1999-03-12 2006-06-07 株式会社デンソー 光センサ
JP4170454B2 (ja) 1998-07-24 2008-10-22 Hoya株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
US6495816B1 (en) 1999-04-30 2002-12-17 Lockheed Martin Corporation Method and apparatus for converting the output of a photodetector to a log voltage
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP2001215550A (ja) 2000-02-01 2001-08-10 Canon Inc 光電変換装置、調光回路およびcmosセンサ
US6995753B2 (en) 2000-06-06 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
US7030551B2 (en) 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
CN1559064A (zh) * 2001-09-25 2004-12-29 ���µ�����ҵ��ʽ���� El显示面板和使用它的el显示装置
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US6838654B2 (en) * 2002-01-17 2005-01-04 Capella Microsystems, Inc. Photodetection system and circuit for amplification
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 LnCuO(S,Se,Te)単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US20040101309A1 (en) 2002-11-27 2004-05-27 Beyette Fred R. Optical communication imager
JP2004187168A (ja) * 2002-12-05 2004-07-02 Sumitomo Electric Ind Ltd 回路構成、光受信器、及び光リンク
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
US6982406B2 (en) * 2003-04-03 2006-01-03 Pao Jung Chen Simple CMOS light-to-current sensor
GB0307789D0 (en) * 2003-04-04 2003-05-07 Koninkl Philips Electronics Nv Electroluminescent display devices
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
GB2403457A (en) * 2003-06-30 2005-01-05 Autoliv Dev Improvements in or relating to an air-bag
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005129909A (ja) * 2003-09-19 2005-05-19 Semiconductor Energy Lab Co Ltd 光センサー装置および電子機器
US7253391B2 (en) 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
CN100477240C (zh) * 2003-10-06 2009-04-08 株式会社半导体能源研究所 半导体器件以及制造该器件的方法
EP1523043B1 (en) 2003-10-06 2011-12-28 Semiconductor Energy Laboratory Co., Ltd. Optical sensor and method for manufacturing the same
JP4481135B2 (ja) * 2003-10-06 2010-06-16 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP3691050B2 (ja) * 2003-10-30 2005-08-31 総吉 廣津 半導体撮像素子
TWI236533B (en) 2003-11-07 2005-07-21 Univ Nat Chiao Tung Biochemical sensing method and its sensor
JP4295075B2 (ja) * 2003-12-05 2009-07-15 日本電信電話株式会社 光・電気変換回路および電界検出光学装置
US20070194379A1 (en) 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
WO2005114749A1 (en) 2004-05-21 2005-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP4590974B2 (ja) * 2004-08-09 2010-12-01 住友電気工業株式会社 光受信回路
US8704803B2 (en) 2004-08-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance using the display device
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
JP4817636B2 (ja) 2004-10-04 2011-11-16 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
EP2453480A2 (en) 2004-11-10 2012-05-16 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
AU2005302963B2 (en) 2004-11-10 2009-07-02 Cannon Kabushiki Kaisha Light-emitting device
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
EP1815530B1 (en) 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI412138B (zh) 2005-01-28 2013-10-11 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7492028B2 (en) 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7220953B2 (en) * 2005-03-18 2007-05-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Photodiode circuit with improved response time
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7358590B2 (en) 2005-03-31 2008-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
US7324123B2 (en) 2005-05-20 2008-01-29 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus
EP1724844A2 (en) 2005-05-20 2006-11-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device, manufacturing method thereof and semiconductor device
JP4809715B2 (ja) 2005-05-20 2011-11-09 株式会社半導体エネルギー研究所 光電変換装置及びその作製方法、並びに半導体装置
EP1727120B1 (en) * 2005-05-23 2008-07-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
JP2007059889A (ja) * 2005-07-27 2007-03-08 Semiconductor Energy Lab Co Ltd 半導体装置
KR101281991B1 (ko) 2005-07-27 2013-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機el表示装置およびその製造方法
JP4429240B2 (ja) * 2005-09-05 2010-03-10 シャープ株式会社 光センサ回路、および受光モジュール
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP5100071B2 (ja) * 2005-09-27 2012-12-19 株式会社半導体エネルギー研究所 成膜装置、成膜方法、及び光電変換装置の作製方法
US7666766B2 (en) 2005-09-27 2010-02-23 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
US20070090276A1 (en) 2005-10-03 2007-04-26 Jia Peng Light detecting device
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101667544B (zh) 2005-11-15 2012-09-05 株式会社半导体能源研究所 半导体器件及其制造方法
EP1949455A1 (en) 2005-11-18 2008-07-30 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ZnOフィルム及びこれを用いたTFTの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US7504616B2 (en) * 2006-04-10 2009-03-17 Panasonic Corporation Exposure device and image forming apparatus using the same
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ZnO TFT
JP4159582B2 (ja) 2006-04-26 2008-10-01 松下電器産業株式会社 受光増幅回路のテスト回路およびテスト方法
JP4750070B2 (ja) * 2006-04-27 2011-08-17 株式会社半導体エネルギー研究所 半導体装置及びそれを用いた電子機器
KR101315282B1 (ko) 2006-04-27 2013-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 사용한 전자기기
DE602007002105D1 (de) 2006-04-28 2009-10-08 Semiconductor Energy Lab Halbleiterbauelement
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5183956B2 (ja) * 2006-04-28 2013-04-17 株式会社半導体エネルギー研究所 半導体装置
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US7791012B2 (en) 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
JP2008109110A (ja) * 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
KR101447044B1 (ko) 2006-10-31 2014-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーelディスプレイおよびその製造方法
US8514165B2 (en) 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
WO2008123119A1 (en) 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device provided with the photoelectric conversion device
JP2008270757A (ja) 2007-03-26 2008-11-06 Semiconductor Energy Lab Co Ltd 半導体装置
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ZnO 계 박막 트랜지스터 및 그 제조방법
KR101401528B1 (ko) 2007-06-29 2014-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전변환장치 및 그 광전변환장치를 구비하는 전자기기
WO2009014155A1 (en) * 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP7070064B2 (ja) * 2018-05-11 2022-05-18 株式会社デンソー 回転電機の制御装置

Also Published As

Publication number Publication date
JP5222649B2 (ja) 2013-06-26
US20090027372A1 (en) 2009-01-29
US8154480B2 (en) 2012-04-10
US20120132965A1 (en) 2012-05-31
TW200925564A (en) 2009-06-16
JP2009047688A (ja) 2009-03-05
WO2009014155A1 (en) 2009-01-29
US8913050B2 (en) 2014-12-16

Similar Documents

Publication Publication Date Title
TWI437214B (zh) 光電轉換裝置及具有光電轉換裝置之電子裝置
TWI453565B (zh) 光電轉換裝置及具有該光電轉換裝置之電子裝置
TWI423431B (zh) 光電轉換裝置和其製造方法
JP5551291B2 (ja) 半導体装置
JP5411437B2 (ja) 光電変換装置
CN1832207B (zh) 光电转换器件及其制造方法、以及半导体器件
US8106474B2 (en) Semiconductor device
TWI496276B (zh) 半導體裝置和半導體裝置的製造方法
CN1866548B (zh) 光电转换装置及其制造方法和半导体装置
CN101233394A (zh) 半导体装置
JP5089419B2 (ja) 光電変換装置の作製方法
JP4750070B2 (ja) 半導体装置及びそれを用いた電子機器
JP4809715B2 (ja) 光電変換装置及びその作製方法、並びに半導体装置
US7679091B2 (en) Photoelectric conversion element having a semiconductor and semiconductor device using the same
JP4532418B2 (ja) 光センサ及びその作製方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees