TWI425882B - 減少副產物沉積在電漿處理系統之方法與配置 - Google Patents

減少副產物沉積在電漿處理系統之方法與配置 Download PDF

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Publication number
TWI425882B
TWI425882B TW094145878A TW94145878A TWI425882B TW I425882 B TWI425882 B TW I425882B TW 094145878 A TW094145878 A TW 094145878A TW 94145878 A TW94145878 A TW 94145878A TW I425882 B TWI425882 B TW I425882B
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TW
Taiwan
Prior art keywords
deposition
plasma
plasma processing
deposition barrier
processing chamber
Prior art date
Application number
TW094145878A
Other languages
English (en)
Chinese (zh)
Other versions
TW200635446A (en
Inventor
羅荷卡爾 席理肯特
貝利三世 安德魯
Original Assignee
泛林股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 泛林股份有限公司 filed Critical 泛林股份有限公司
Publication of TW200635446A publication Critical patent/TW200635446A/zh
Application granted granted Critical
Publication of TWI425882B publication Critical patent/TWI425882B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Power Engineering (AREA)
  • Epidemiology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094145878A 2004-12-22 2005-12-22 減少副產物沉積在電漿處理系統之方法與配置 TWI425882B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/022,982 US7959984B2 (en) 2004-12-22 2004-12-22 Methods and arrangement for the reduction of byproduct deposition in a plasma processing system

Publications (2)

Publication Number Publication Date
TW200635446A TW200635446A (en) 2006-10-01
TWI425882B true TWI425882B (zh) 2014-02-01

Family

ID=36594127

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094145878A TWI425882B (zh) 2004-12-22 2005-12-22 減少副產物沉積在電漿處理系統之方法與配置

Country Status (6)

Country Link
US (1) US7959984B2 (enExample)
JP (2) JP2008526026A (enExample)
KR (1) KR101209534B1 (enExample)
CN (1) CN101422088B (enExample)
TW (1) TWI425882B (enExample)
WO (1) WO2006081004A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766904B (zh) * 2016-12-06 2022-06-11 美商應用材料股份有限公司 用於在基板處理中減少顆粒的處理套件屏蔽、物理氣相沉積腔室及方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060218680A1 (en) * 2005-03-28 2006-09-28 Bailey Andrew D Iii Apparatus for servicing a plasma processing system with a robot
US7319316B2 (en) 2005-06-29 2008-01-15 Lam Research Corporation Apparatus for measuring a set of electrical characteristics in a plasma
US7732009B2 (en) * 2006-09-26 2010-06-08 United Microelectronics Corp. Method of cleaning reaction chamber, method of forming protection film and protection wafer
WO2008049124A2 (en) * 2006-10-19 2008-04-24 Boise State University Magnetomechanical transducer, and apparatus and methods of harvesting energy
DE102007037527B4 (de) * 2006-11-10 2013-05-08 Schott Ag Verfahren zum Beschichten von Gegenständen mit Wechselschichten
WO2008061166A2 (en) * 2006-11-14 2008-05-22 Boise State University Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials
WO2009029953A2 (en) * 2007-08-30 2009-03-05 Boise State University Magnetic material with large magnetic-field-induced deformation
US8586194B2 (en) * 2007-08-30 2013-11-19 Boise State University Polycrystalline foams exhibiting giant magnetic-field-induced deformation and methods of making and using same
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US9293353B2 (en) 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US9490106B2 (en) 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
FR2995454B1 (fr) * 2012-09-07 2014-08-22 Commissariat Energie Atomique Procede pour la realisation d'un electrolyte a base de lithium pour micro-batterie solide
US9029267B2 (en) 2013-05-16 2015-05-12 Lam Research Corporation Controlling temperature of a faraday shield
US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
CN104302084B (zh) * 2013-07-17 2017-04-12 朗姆研究公司 空气冷却的法拉第屏蔽罩和使用该屏蔽罩的方法
US9583369B2 (en) * 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
CN104485272A (zh) * 2014-12-19 2015-04-01 中国科学院嘉兴微电子仪器与设备工程中心 一种应用于等离子体设备的腔室结构及等离子体设备
RU2019108040A (ru) * 2016-08-31 2020-10-01 Ван Сайнтифик, Инк. Сша Системы, устройства и способы для получения электрической энергии посредством преобразования воды в водород и кислород
CN109488720B (zh) * 2018-12-27 2024-04-26 仪晟科学仪器(嘉兴)有限公司 闭循环液氦制冷机的机械隔离式震动屏蔽系统
CN113113280B (zh) * 2020-01-09 2022-06-10 江苏鲁汶仪器有限公司 等离子体处理系统及其开合法拉第组件
CN114703464B (zh) * 2022-06-06 2022-08-23 拓荆科技(北京)有限公司 一种膜层生长设备及方法
US20250157833A1 (en) * 2023-11-15 2025-05-15 Applied Materials, Inc. Cold plate for trapping etching and deposition byproducts

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW430902B (en) * 1998-12-22 2001-04-21 Applied Materials Inc Improvement in adhesion of diffusion barrier and fluorinated silicon dioxide using hydrogen based preclean technology
TW447014B (en) * 1998-12-14 2001-07-21 Applied Materials Inc High temperature chemical vapor deposition chamber
JP2002525866A (ja) * 1998-09-22 2002-08-13 アプライド マテリアルズ インコーポレイテッド 内部誘導コイルアンテナ及び導電性チャンバ壁を有するｒｆプラズマエッチング反応器
US6537919B1 (en) * 2001-12-19 2003-03-25 Taiwan Semiconductor Manufacturing Company Process to remove micro-scratches
TW527647B (en) * 2002-02-06 2003-04-11 Jusung Eng Co Ltd Thin film deposition method
TW588401B (en) * 2000-11-01 2004-05-21 Applied Materials Inc Method of plasma etching features on a dielectric layer on a substrate

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE440201B (sv) 1983-12-01 1985-07-22 Asea Ab Verktygshallare for industrirobotar
US4594111A (en) 1984-10-04 1986-06-10 Coonan Edmund C Liquid phase cleaner-solvent
JPS61172335A (ja) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp プラズマ装置
JPS6358834A (ja) 1986-08-27 1988-03-14 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション スパッタリング装置
JP2555062B2 (ja) * 1987-04-10 1996-11-20 株式会社日立製作所 プラズマ処理装置
JPH01165120A (ja) * 1987-12-22 1989-06-29 Mitsubishi Electric Corp エツチング装置
JP2926711B2 (ja) * 1988-05-13 1999-07-28 松下電器産業株式会社 ドライエッチング装置
JPH0355832A (ja) * 1989-07-25 1991-03-11 Toshiba Corp 半導体製造装置
JPH03145124A (ja) * 1989-10-31 1991-06-20 Fujitsu Ltd ドライエッチング装置
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
JP2949874B2 (ja) * 1990-11-21 1999-09-20 富士電機株式会社 Ｅｃｒプラズマｃｖｄ装置ドライクリーニングの方法
JPH081923B2 (ja) 1991-06-24 1996-01-10 ティーディーケイ株式会社 クリーン搬送方法及び装置
JP2745895B2 (ja) * 1991-10-04 1998-04-28 住友金属工業株式会社 プラズマ装置
JPH06272027A (ja) 1993-03-17 1994-09-27 Fuji Photo Film Co Ltd 真空蒸着槽の自動洗浄方法及び装置
US5705080A (en) * 1994-07-06 1998-01-06 Applied Materials, Inc. Plasma-inert cover and plasma cleaning process
TW327236B (en) * 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
JPH1081973A (ja) * 1996-03-18 1998-03-31 Hyundai Electron Ind Co Ltd 誘導結合形プラズマｃｖｄ装置
US6135697A (en) 1997-01-30 2000-10-24 Siemens Electrocom, L.P. Transfer of cartridges containing flat articles
US6139697A (en) * 1997-01-31 2000-10-31 Applied Materials, Inc. Low temperature integrated via and trench fill process and apparatus
JP3423186B2 (ja) * 1997-04-09 2003-07-07 東京エレクトロン株式会社 処理方法
AU6977998A (en) * 1997-04-21 1998-11-13 Tokyo Electron Arizona, Inc. Method and apparatus for ionized sputtering of materials
JP3468446B2 (ja) * 1997-05-20 2003-11-17 東京エレクトロン株式会社 プラズマ処理装置
US6521081B2 (en) * 1997-12-05 2003-02-18 Tegal Corporation Deposition shield for a plasma reactor
US6120660A (en) 1998-02-11 2000-09-19 Silicon Genesis Corporation Removable liner design for plasma immersion ion implantation
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
JP2000200754A (ja) * 1999-01-06 2000-07-18 Matsushita Electric Ind Co Ltd 真空処理方法と真空処理装置
US6388382B1 (en) * 1999-03-09 2002-05-14 Hitachi, Ltd. Plasma processing apparatus and method
WO2001001467A1 (en) * 1999-06-29 2001-01-04 Tohoku Techno Arch Co., Ltd. Method and apparatus for processing fine particle dust in plasma
US6306008B1 (en) 1999-08-31 2001-10-23 Micron Technology, Inc. Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization
JP2001246331A (ja) 2000-03-08 2001-09-11 Sharp Corp 洗浄装置
US20020100557A1 (en) * 2001-01-29 2002-08-01 Applied Materials, Inc. ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window
DE10110373C2 (de) 2001-03-03 2003-03-06 Wolfgang Daum Verfahren und Vorrichtung zur Reinigung von Innenräumen von Automobilen
US7451941B2 (en) 2001-03-13 2008-11-18 Jackson David P Dense fluid spray cleaning process and apparatus
US6830622B2 (en) * 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
JP2002313732A (ja) * 2001-04-11 2002-10-25 Seiko Epson Corp プラズマ装置
KR100420171B1 (ko) 2001-08-07 2004-03-02 삼성광주전자 주식회사 로봇 청소기와 그 시스템 및 제어방법
US20040194890A1 (en) 2001-09-28 2004-10-07 Tokyo Electron Limited Hybrid plasma processing apparatus
JP3983557B2 (ja) * 2002-01-29 2007-09-26 富士通株式会社 誘導結合型プラズマ処理装置
JP4220173B2 (ja) 2002-03-26 2009-02-04 株式会社日立ハイテクノロジーズ 基板の搬送方法
JP4054208B2 (ja) 2002-04-01 2008-02-27 富士通株式会社 コンタクタの製造方法
JP2003311555A (ja) 2002-04-25 2003-11-05 Okuma Corp ネジ締め装置
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
JP3971364B2 (ja) 2002-11-01 2007-09-05 三星電子株式会社 食器洗い機
CA2510549C (en) 2002-12-23 2012-03-13 Catalyst Services, Inc. A cleaning and/or inspecting robot for hazardous environments including catalyst removal
JP2004228102A (ja) * 2003-01-09 2004-08-12 Hitachi Kokusai Electric Inc プラズマ処理装置
JP3935850B2 (ja) * 2003-01-31 2007-06-27 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4363863B2 (ja) * 2003-02-06 2009-11-11 株式会社日立ハイテクノロジーズ 半導体処理装置における処理制御方法
JP2005039015A (ja) * 2003-07-18 2005-02-10 Hitachi High-Technologies Corp プラズマ処理方法および装置
US7241397B2 (en) * 2004-03-30 2007-07-10 Tokyo Electron Limited Honeycomb optical window deposition shield and method for a plasma processing system
US20050241669A1 (en) * 2004-04-29 2005-11-03 Tokyo Electron Limited Method and system of dry cleaning a processing chamber
JP2004274076A (ja) * 2004-05-13 2004-09-30 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及びその製造装置
US7578945B2 (en) * 2004-09-27 2009-08-25 Lam Research Corporation Method and apparatus for tuning a set of plasma processing steps
US20060218680A1 (en) 2005-03-28 2006-09-28 Bailey Andrew D Iii Apparatus for servicing a plasma processing system with a robot

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002525866A (ja) * 1998-09-22 2002-08-13 アプライド マテリアルズ インコーポレイテッド 内部誘導コイルアンテナ及び導電性チャンバ壁を有するｒｆプラズマエッチング反応器
TW447014B (en) * 1998-12-14 2001-07-21 Applied Materials Inc High temperature chemical vapor deposition chamber
TW430902B (en) * 1998-12-22 2001-04-21 Applied Materials Inc Improvement in adhesion of diffusion barrier and fluorinated silicon dioxide using hydrogen based preclean technology
TW588401B (en) * 2000-11-01 2004-05-21 Applied Materials Inc Method of plasma etching features on a dielectric layer on a substrate
US6537919B1 (en) * 2001-12-19 2003-03-25 Taiwan Semiconductor Manufacturing Company Process to remove micro-scratches
TW527647B (en) * 2002-02-06 2003-04-11 Jusung Eng Co Ltd Thin film deposition method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766904B (zh) * 2016-12-06 2022-06-11 美商應用材料股份有限公司 用於在基板處理中減少顆粒的處理套件屏蔽、物理氣相沉積腔室及方法

Also Published As

Publication number Publication date
CN101422088A (zh) 2009-04-29
US7959984B2 (en) 2011-06-14
JP2008526026A (ja) 2008-07-17
KR20070086605A (ko) 2007-08-27
JP2013102221A (ja) 2013-05-23
WO2006081004B1 (en) 2008-10-30
US20060130758A1 (en) 2006-06-22
WO2006081004A2 (en) 2006-08-03
JP5726928B2 (ja) 2015-06-03
CN101422088B (zh) 2012-02-01
KR101209534B1 (ko) 2012-12-07
WO2006081004A3 (en) 2008-08-14
TW200635446A (en) 2006-10-01

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