JP2008526026A5 - - Google Patents
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- JP2008526026A5 JP2008526026A5 JP2007548344A JP2007548344A JP2008526026A5 JP 2008526026 A5 JP2008526026 A5 JP 2008526026A5 JP 2007548344 A JP2007548344 A JP 2007548344A JP 2007548344 A JP2007548344 A JP 2007548344A JP 2008526026 A5 JP2008526026 A5 JP 2008526026A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- deposition barrier
- deposition
- chamber
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 claims description 142
- 230000008021 deposition Effects 0.000 claims description 140
- 230000004888 barrier function Effects 0.000 claims description 114
- 238000012545 processing Methods 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 69
- 239000006227 byproduct Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 16
- 238000011065 in-situ storage Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000009616 inductively coupled plasma Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/022,982 US7959984B2 (en) | 2004-12-22 | 2004-12-22 | Methods and arrangement for the reduction of byproduct deposition in a plasma processing system |
| PCT/US2005/045729 WO2006081004A2 (en) | 2004-12-22 | 2005-12-16 | Methods and arrangement for the reduction of byproduct deposition in a plasma processing system |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013021059A Division JP5726928B2 (ja) | 2004-12-22 | 2013-02-06 | プラズマ処理システムにおける副生成物堆積減少方法並びに構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008526026A JP2008526026A (ja) | 2008-07-17 |
| JP2008526026A5 true JP2008526026A5 (enExample) | 2013-04-11 |
Family
ID=36594127
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007548344A Pending JP2008526026A (ja) | 2004-12-22 | 2005-12-16 | プラズマ処理システムにおける副生成物堆積減少方法並びに構造 |
| JP2013021059A Expired - Fee Related JP5726928B2 (ja) | 2004-12-22 | 2013-02-06 | プラズマ処理システムにおける副生成物堆積減少方法並びに構造 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013021059A Expired - Fee Related JP5726928B2 (ja) | 2004-12-22 | 2013-02-06 | プラズマ処理システムにおける副生成物堆積減少方法並びに構造 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7959984B2 (enExample) |
| JP (2) | JP2008526026A (enExample) |
| KR (1) | KR101209534B1 (enExample) |
| CN (1) | CN101422088B (enExample) |
| TW (1) | TWI425882B (enExample) |
| WO (1) | WO2006081004A2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060218680A1 (en) * | 2005-03-28 | 2006-09-28 | Bailey Andrew D Iii | Apparatus for servicing a plasma processing system with a robot |
| US7319316B2 (en) | 2005-06-29 | 2008-01-15 | Lam Research Corporation | Apparatus for measuring a set of electrical characteristics in a plasma |
| US7732009B2 (en) * | 2006-09-26 | 2010-06-08 | United Microelectronics Corp. | Method of cleaning reaction chamber, method of forming protection film and protection wafer |
| WO2008049124A2 (en) * | 2006-10-19 | 2008-04-24 | Boise State University | Magnetomechanical transducer, and apparatus and methods of harvesting energy |
| DE102007037527B4 (de) * | 2006-11-10 | 2013-05-08 | Schott Ag | Verfahren zum Beschichten von Gegenständen mit Wechselschichten |
| WO2008061166A2 (en) * | 2006-11-14 | 2008-05-22 | Boise State University | Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials |
| WO2009029953A2 (en) * | 2007-08-30 | 2009-03-05 | Boise State University | Magnetic material with large magnetic-field-induced deformation |
| US8586194B2 (en) * | 2007-08-30 | 2013-11-19 | Boise State University | Polycrystalline foams exhibiting giant magnetic-field-induced deformation and methods of making and using same |
| US20110297088A1 (en) * | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
| US9293353B2 (en) | 2011-04-28 | 2016-03-22 | Lam Research Corporation | Faraday shield having plasma density decoupling structure between TCP coil zones |
| US9490106B2 (en) | 2011-04-28 | 2016-11-08 | Lam Research Corporation | Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil |
| FR2995454B1 (fr) * | 2012-09-07 | 2014-08-22 | Commissariat Energie Atomique | Procede pour la realisation d'un electrolyte a base de lithium pour micro-batterie solide |
| US9029267B2 (en) | 2013-05-16 | 2015-05-12 | Lam Research Corporation | Controlling temperature of a faraday shield |
| US9885493B2 (en) | 2013-07-17 | 2018-02-06 | Lam Research Corporation | Air cooled faraday shield and methods for using the same |
| CN104302084B (zh) * | 2013-07-17 | 2017-04-12 | 朗姆研究公司 | 空气冷却的法拉第屏蔽罩和使用该屏蔽罩的方法 |
| US9583369B2 (en) * | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
| US9725799B2 (en) | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
| CN104485272A (zh) * | 2014-12-19 | 2015-04-01 | 中国科学院嘉兴微电子仪器与设备工程中心 | 一种应用于等离子体设备的腔室结构及等离子体设备 |
| RU2019108040A (ru) * | 2016-08-31 | 2020-10-01 | Ван Сайнтифик, Инк. Сша | Системы, устройства и способы для получения электрической энергии посредством преобразования воды в водород и кислород |
| US9773665B1 (en) * | 2016-12-06 | 2017-09-26 | Applied Materials, Inc. | Particle reduction in a physical vapor deposition chamber |
| CN109488720B (zh) * | 2018-12-27 | 2024-04-26 | 仪晟科学仪器(嘉兴)有限公司 | 闭循环液氦制冷机的机械隔离式震动屏蔽系统 |
| CN113113280B (zh) * | 2020-01-09 | 2022-06-10 | 江苏鲁汶仪器有限公司 | 等离子体处理系统及其开合法拉第组件 |
| CN114703464B (zh) * | 2022-06-06 | 2022-08-23 | 拓荆科技(北京)有限公司 | 一种膜层生长设备及方法 |
| US20250157833A1 (en) * | 2023-11-15 | 2025-05-15 | Applied Materials, Inc. | Cold plate for trapping etching and deposition byproducts |
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| US20060218680A1 (en) | 2005-03-28 | 2006-09-28 | Bailey Andrew D Iii | Apparatus for servicing a plasma processing system with a robot |
-
2004
- 2004-12-22 US US11/022,982 patent/US7959984B2/en active Active
-
2005
- 2005-12-16 JP JP2007548344A patent/JP2008526026A/ja active Pending
- 2005-12-16 WO PCT/US2005/045729 patent/WO2006081004A2/en not_active Ceased
- 2005-12-16 KR KR1020077014360A patent/KR101209534B1/ko not_active Expired - Lifetime
- 2005-12-16 CN CN2005800475527A patent/CN101422088B/zh not_active Expired - Lifetime
- 2005-12-22 TW TW094145878A patent/TWI425882B/zh not_active IP Right Cessation
-
2013
- 2013-02-06 JP JP2013021059A patent/JP5726928B2/ja not_active Expired - Fee Related
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