KR101209534B1 - 플라즈마 처리 시스템에서 부산물의 퇴적물의 감소를 위한 방법 및 장치 - Google Patents

플라즈마 처리 시스템에서 부산물의 퇴적물의 감소를 위한 방법 및 장치 Download PDF

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Publication number
KR101209534B1
KR101209534B1 KR1020077014360A KR20077014360A KR101209534B1 KR 101209534 B1 KR101209534 B1 KR 101209534B1 KR 1020077014360 A KR1020077014360 A KR 1020077014360A KR 20077014360 A KR20077014360 A KR 20077014360A KR 101209534 B1 KR101209534 B1 KR 101209534B1
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South Korea
Prior art keywords
deposition barrier
plasma
plasma processing
processing chamber
deposition
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Expired - Lifetime
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Korean (ko)
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KR20070086605A (ko
Inventor
시리칸트 피 로호카레
앤드류 디 3세 베일리
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Power Engineering (AREA)
  • Epidemiology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020077014360A 2004-12-22 2005-12-16 플라즈마 처리 시스템에서 부산물의 퇴적물의 감소를 위한 방법 및 장치 Expired - Lifetime KR101209534B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/022,982 US7959984B2 (en) 2004-12-22 2004-12-22 Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
US11/022,982 2004-12-22

Publications (2)

Publication Number Publication Date
KR20070086605A KR20070086605A (ko) 2007-08-27
KR101209534B1 true KR101209534B1 (ko) 2012-12-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077014360A Expired - Lifetime KR101209534B1 (ko) 2004-12-22 2005-12-16 플라즈마 처리 시스템에서 부산물의 퇴적물의 감소를 위한 방법 및 장치

Country Status (6)

Country Link
US (1) US7959984B2 (enExample)
JP (2) JP2008526026A (enExample)
KR (1) KR101209534B1 (enExample)
CN (1) CN101422088B (enExample)
TW (1) TWI425882B (enExample)
WO (1) WO2006081004A2 (enExample)

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WO2008061166A2 (en) * 2006-11-14 2008-05-22 Boise State University Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials
WO2009029953A2 (en) * 2007-08-30 2009-03-05 Boise State University Magnetic material with large magnetic-field-induced deformation
US8586194B2 (en) * 2007-08-30 2013-11-19 Boise State University Polycrystalline foams exhibiting giant magnetic-field-induced deformation and methods of making and using same
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US9293353B2 (en) 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US9490106B2 (en) 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
FR2995454B1 (fr) * 2012-09-07 2014-08-22 Commissariat Energie Atomique Procede pour la realisation d'un electrolyte a base de lithium pour micro-batterie solide
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US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
CN104302084B (zh) * 2013-07-17 2017-04-12 朗姆研究公司 空气冷却的法拉第屏蔽罩和使用该屏蔽罩的方法
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US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
CN109488720B (zh) * 2018-12-27 2024-04-26 仪晟科学仪器(嘉兴)有限公司 闭循环液氦制冷机的机械隔离式震动屏蔽系统
CN113113280B (zh) * 2020-01-09 2022-06-10 江苏鲁汶仪器有限公司 等离子体处理系统及其开合法拉第组件
CN114703464B (zh) * 2022-06-06 2022-08-23 拓荆科技(北京)有限公司 一种膜层生长设备及方法
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Also Published As

Publication number Publication date
CN101422088A (zh) 2009-04-29
US7959984B2 (en) 2011-06-14
JP2008526026A (ja) 2008-07-17
KR20070086605A (ko) 2007-08-27
JP2013102221A (ja) 2013-05-23
WO2006081004B1 (en) 2008-10-30
US20060130758A1 (en) 2006-06-22
TWI425882B (zh) 2014-02-01
WO2006081004A2 (en) 2006-08-03
JP5726928B2 (ja) 2015-06-03
CN101422088B (zh) 2012-02-01
WO2006081004A3 (en) 2008-08-14
TW200635446A (en) 2006-10-01

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