AU6977998A - Method and apparatus for ionized sputtering of materials - Google Patents

Method and apparatus for ionized sputtering of materials

Info

Publication number
AU6977998A
AU6977998A AU69779/98A AU6977998A AU6977998A AU 6977998 A AU6977998 A AU 6977998A AU 69779/98 A AU69779/98 A AU 69779/98A AU 6977998 A AU6977998 A AU 6977998A AU 6977998 A AU6977998 A AU 6977998A
Authority
AU
Australia
Prior art keywords
materials
ionized sputtering
ionized
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU69779/98A
Inventor
Kaihan Abidi Ashtiani
Alexander D Lantsman
Thomas J. Licata
Claude Macquignon
James Anthony Seirmarco
Israel Wagner
Corey A. Weiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Arizona Inc
Original Assignee
Tokyo Electron Arizona Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/837,551 external-priority patent/US5800688A/en
Priority claimed from US08/844,757 external-priority patent/US5948215A/en
Application filed by Tokyo Electron Arizona Inc filed Critical Tokyo Electron Arizona Inc
Publication of AU6977998A publication Critical patent/AU6977998A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AU69779/98A 1997-04-21 1998-04-21 Method and apparatus for ionized sputtering of materials Abandoned AU6977998A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US84475697A 1997-04-21 1997-04-21
US08837551 1997-04-21
US08844757 1997-04-21
US08/837,551 US5800688A (en) 1997-04-21 1997-04-21 Apparatus for ionized sputtering
US08/844,757 US5948215A (en) 1997-04-21 1997-04-21 Method and apparatus for ionized sputtering
US08844756 1997-04-21
PCT/US1998/008033 WO1998048444A1 (en) 1997-04-21 1998-04-21 Method and apparatus for ionized sputtering of materials

Publications (1)

Publication Number Publication Date
AU6977998A true AU6977998A (en) 1998-11-13

Family

ID=27420268

Family Applications (1)

Application Number Title Priority Date Filing Date
AU69779/98A Abandoned AU6977998A (en) 1997-04-21 1998-04-21 Method and apparatus for ionized sputtering of materials

Country Status (7)

Country Link
EP (1) EP0978138A1 (en)
JP (1) JP3775689B2 (en)
KR (1) KR100322330B1 (en)
CN (1) CN1228810C (en)
AU (1) AU6977998A (en)
TW (1) TW460602B (en)
WO (1) WO1998048444A1 (en)

Families Citing this family (46)

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US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6280563B1 (en) 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
US6117279A (en) * 1998-11-12 2000-09-12 Tokyo Electron Limited Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition
US6585870B1 (en) 2000-04-28 2003-07-01 Honeywell International Inc. Physical vapor deposition targets having crystallographic orientations
SE519931C2 (en) * 2000-06-19 2003-04-29 Chemfilt R & D Ab Device and method for pulsed, highly ionized magnetron sputtering
US6592710B1 (en) * 2001-04-12 2003-07-15 Lam Research Corporation Apparatus for controlling the voltage applied to an electrostatic shield used in a plasma generator
DE10045544C2 (en) * 2000-09-07 2002-09-12 Siemens Ag Process for applying a coating to a lamp
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US7247221B2 (en) * 2002-05-17 2007-07-24 Applied Films Corporation System and apparatus for control of sputter deposition process
US7959984B2 (en) * 2004-12-22 2011-06-14 Lam Research Corporation Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
US7820020B2 (en) * 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
KR100720989B1 (en) * 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 Multi chamber plasma process system
US20070074968A1 (en) * 2005-09-30 2007-04-05 Mirko Vukovic ICP source for iPVD for uniform plasma in combination high pressure deposition and low pressure etch process
US7353771B2 (en) * 2005-11-07 2008-04-08 Mks Instruments, Inc. Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
KR100719703B1 (en) * 2005-12-29 2007-05-17 삼성에스디아이 주식회사 Method of vapor deposition using particle beam and apparatus for the same
JP4963023B2 (en) * 2006-01-11 2012-06-27 株式会社アルバック Sputtering method and sputtering apparatus
US7837826B2 (en) * 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
DE102007037527B4 (en) * 2006-11-10 2013-05-08 Schott Ag Process for coating objects with alternating layers
WO2008065744A1 (en) * 2006-11-28 2008-06-05 Samco Inc. Plasma processing apparatus
SG176182A1 (en) * 2009-05-20 2011-12-29 Ulvac Inc Film-forming method and film-forming apparatus
TWI443211B (en) 2010-05-05 2014-07-01 Hon Hai Prec Ind Co Ltd Sputtering device
CN102234772B (en) * 2010-05-06 2014-03-26 鸿富锦精密工业（深圳）有限公司 Coating device
CN102300383B (en) * 2010-06-23 2013-03-27 北京北方微电子基地设备工艺研究中心有限责任公司 Inductance coupling apparatus and plasma processing equipment applying same
KR101456810B1 (en) * 2010-09-27 2014-10-31 베이징 엔엠씨 씨오., 엘티디. Plasma processing apparatus
CN102573429B (en) * 2010-12-09 2015-09-02 北京北方微电子基地设备工艺研究中心有限责任公司 Screening arrangement, processing method and equipment, semiconductor equipment
CN102543645B (en) * 2010-12-14 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 Faraday shield and plasma processing device
TWI556690B (en) * 2011-08-30 2016-11-01 Emd Corp An antenna for a plasma processing apparatus, and a plasma processing apparatus using the same
CN103014745B (en) * 2011-09-28 2015-07-08 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma pre-cleaning device
CN103796413B (en) * 2012-11-01 2017-05-03 中微半导体设备(上海)有限公司 Plasma reactor and method for manufacturing semiconductor substrate
CN103820758B (en) * 2012-11-19 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 Physical vapor deposition device
CN105088156A (en) * 2014-05-05 2015-11-25 上海建冶环保科技股份有限公司 Magnetron sputtering apparatus
CN105097401B (en) 2014-05-13 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of reaction chamber and semiconductor processing equipment
US10431440B2 (en) * 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN105572610B (en) * 2015-12-23 2018-03-20 中国人民解放军国防科学技术大学 MEMS lattice coils and preparation method thereof
CN108573846A (en) * 2017-03-09 2018-09-25 北京北方华创微电子装备有限公司 Plasma chamber and plasma processing device
TWI713414B (en) * 2017-10-23 2020-12-11 日商國際電氣股份有限公司 Substrate processing device, semiconductor device manufacturing method and recording medium
US10867776B2 (en) * 2018-05-09 2020-12-15 Applied Materials, Inc. Physical vapor deposition in-chamber electro-magnet
JP7295946B2 (en) * 2018-11-02 2023-06-21 北京北方華創微電子装備有限公司 Liner assemblies, reaction chambers and semiconductor processing equipment
CN109946734A (en) * 2019-03-20 2019-06-28 中国原子能科学研究院 A kind of low energy heavy isotope ionized gas ionization chamber detector
CN115704087A (en) * 2021-08-04 2023-02-17 北京北方华创微电子装备有限公司 Magnetron sputtering device
CN114302548B (en) * 2021-12-31 2023-07-25 中山市博顿光电科技有限公司 Radio frequency ionization device, radio frequency neutralizer and control method thereof
CN114686831B (en) * 2022-03-11 2023-11-07 中国电子科技集团公司第四十八研究所 Metal self-ionization device for deep hole PVD and film plating method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
JPH06120169A (en) * 1992-10-07 1994-04-28 Hitachi Ltd Plasma generating apparatus
JP3094688B2 (en) * 1992-10-12 2000-10-03 富士電機株式会社 Manufacturing method of insulating film
DE4235064A1 (en) * 1992-10-17 1994-04-21 Leybold Ag Device for generating a plasma by means of sputtering
JPH08316205A (en) * 1995-05-19 1996-11-29 Hitachi Ltd Method and device for performing plasma treatment
US5763851A (en) 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
TW327236B (en) 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
US6254737B1 (en) * 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering

Also Published As

Publication number Publication date
EP0978138A1 (en) 2000-02-09
JP2002504187A (en) 2002-02-05
CN1265222A (en) 2000-08-30
WO1998048444A1 (en) 1998-10-29
JP3775689B2 (en) 2006-05-17
TW460602B (en) 2001-10-21
CN1228810C (en) 2005-11-23
KR100322330B1 (en) 2002-03-18
KR20010020136A (en) 2001-03-15

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase