TWI413273B - 封裝積體薄膜發光二極體 - Google Patents

封裝積體薄膜發光二極體 Download PDF

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TWI413273B
TWI413273B TW094137652A TW94137652A TWI413273B TW I413273 B TWI413273 B TW I413273B TW 094137652 A TW094137652 A TW 094137652A TW 94137652 A TW94137652 A TW 94137652A TW I413273 B TWI413273 B TW I413273B
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led
substrate
package
package substrate
layers
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John Epler
Paul S Martin
Michael R Krames
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Philips Lumileds Lighting Co
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Description

封裝積體薄膜發光二極體
本發明係關於發光二極體(LED)且尤其係關於一種用於安裝LED晶粒的技術，其用於封裝使得該等經封裝LED具有改良的光學、電及熱特徵。
藉由在成長基板上成長包括p型層及n型層之磊晶層形成LED。發光作用層夾於n與p層之間。綠、藍及紫外LED通常基於氮化鎵，其中成長基板通常為藍寶石(絕緣體)、SiC(半導體)、矽、絕緣體上碳化矽(SiCOI)或其它設計基板之任一者。紅外、紅及琥珀色LED通常為AlInGaPAs之某些組合且成長於GaAs或InP基板上。成長基板具有類似於LED材料之晶格結構的晶格結構。
有時，需要移除成長基板以(例如)改良LED之光學特性或獲得對LED層之電存取。在藍寶石基板之情況下，移除可藉由雷射熔融GaN/藍寶石介面進行。在Si或GaAs基板之情況下，可利用更習知的選擇性濕式蝕刻移除基板。
由於LED磊晶層非常薄(例如，小於10微米)且易損，故在移除成長基板之前，必須首先將LED晶圓附著至支撐基板，以使得LED層夾於成長基板與支撐基板之間。支撐基板具有用於LED之特定應用之所要光學、電及熱特徵。然後藉由已知方法移除成長基板。然後切割所產生的帶有支撐基板及LED層之晶圓，且然後將LED晶粒安裝於封裝中。
封裝通常包括帶有自晶粒附屬區運行至封裝端子之電導體的導熱板。LED之p及n層電連接至封裝導體。在垂直注入裝置之情況下，支撐基板為金屬接合至封裝，向鄰近支撐基板之n或p型LED層提供電流路徑，且相反的導電類型層經由佈線(例如，帶狀佈線(wire ribbon))連接至封裝接觸焊墊。在覆晶LED(n與p型曝露於相同側)之情況下，n及p連接均藉由附著至多個接觸焊墊的晶粒形成，該等多個接觸焊墊經圖案化以與在晶粒上之n及p接點金屬化相配。不需要佈線。
下文描述上述裝置之某些缺陷。
在LED層與封裝之間之支撐基板提供某些不合乎需要的電阻及熱阻。支撐基板自身增加費用及高度。將支撐基板附著至LED晶圓之處理係昂貴的，且降低良率。
因此，需要一種技術來避免上述缺陷。
LED磊晶層(n型、p型及作用層)成長於基板上。在一實例中，LED為基於GaN之LED，且相對較厚之(約1-2微米)GaN層(通常為n型)成長於基板上以在基板晶格結構與GaN晶格結構之間提供低應力轉變。
金屬化在晶圓上之頂部LED層(通常為p型)，且切割晶圓為獨立的LED元件。對於每一晶粒而言，該經金屬化之層金屬接合至延伸超出LED晶粒之邊界之封裝基板，使得該等LED層位於封裝基板與成長基板之間。封裝基板提供導引至可焊接的封裝連接件之電接點及跡線。
對於每一個別晶片而言，然後移除成長基板。
然後薄化GaN轉變層且將其頂面紋理化，圖案化、定形或粗糙化以改良光提取。薄化顯示(曝露)了n型GaN接觸層、移除較不透明的晶核層且移除在成長基板移除期間造成的晶體損壞。
若LED為垂直注入裝置，則需要至經薄化之GaN層(通常為n型)之電接點。在GaN層上形成一適當的金屬接點，且在封裝基板上之接觸焊墊與在GaN層上之接觸之間提供帶狀佈線或金屬橋(metal bridge)。若LED為覆晶設計，則n及p接點形成於LED朝向封裝基板之該側且接合至在封裝基板上之接觸焊墊(不需要佈線)。
由於LED層非常薄(小於50微米且通常小於3微米)，故該經薄化的GaN層吸收非常少的光；由於LED層直接接合至封裝基板其間不需要任何支撐基板，故對該封裝存在較高的熱導率；且由於封裝與LED層之間電阻較小故效率(光輸出/功率輸入)較高。GaN層之光提取特徵(例如，粗糙化)進一步改良效率。
亦描述了一方法，其中LED層在沒有首先被切割的情況下轉移至封裝基板。隨後完整地移除整個成長基板使得其可再使用。
可在非基於GaN之LED上之執行該方法。描述了其它實施例。
參考圖1至圖16描述了一種在封裝基板上提供非常薄的 LED，無需任何成長基板或支撐基板之方法。。
作為正文前的圖文，在成長基板上形成一習知LED。在所用實例中，LED為基於GaN之LED，諸如AlInGaN LED。術語GaN將用於表示任何基於GaN之材料。通常，相對較厚(約1-2微米)不摻雜的或n型GaN層使用習知技術成長於藍寶石成長基板上。亦可使用其它基板，諸如SiC、Si、SiCOI及ZnO。在磷化鎵(III-P)LED之情況下，成長基板通常為GaAs或Ge。相對較厚的GaN層通常包括低溫晶核層及一或多個額外層，以便於提供用於n型披覆層及作用層之低缺陷晶格結構(low-defect lattice structure)。
然後在厚的n型層上形成一或多個n型披覆層，隨後為作用層、一或多個p型披覆層及p型接觸層(用於金屬化)。
使用各種技術以獲得至n層之電存取。在覆晶實例中，p層及作用層之部分被蝕刻掉，以曝露用於金屬化之n層。以此方式，p接點及n接點位於在晶片之相同側且可直接電附著至封裝基板接觸焊墊。來自n金屬接點之電流最初橫向流經n層。相反，在垂直注入(非覆晶)LED中，n接點形成於晶片之一側且p接點形成於晶片之另一側。至p或n接點之一者之電接點典型係使用佈線接合或金屬橋所製成，且其它接點直接接合至封裝基板接觸焊墊。
美國專利第6,649,440號及第6,274,399號描述了形成LED之實例，二者均讓渡予Lumileds且以引用方式併入本文。
參考圖1至圖13A描述了佈線接合LED型式。
可在切割之前大規模地測試覆晶裝置。測試參數包括顏 色及亮度。然後可將裝置放入箱內(具有相似屬性之LED聚集在一起)。
圖1為安裝於封裝基板12上之兩個LED晶粒10之橫截面圖。每一LED晶粒10包括一藍寶石成長基板14、一n型層16、一作用層18及一p型層20。p層表面經高度摻雜以與晶粒金屬化層(例如，NiAg)形成歐姆接觸。若金屬化高度反射由作用層發出之光則為較佳的。然後接合金屬化層至在封裝基板12上之金屬接觸焊墊22。接合技術可為焊接、熱壓縮、相互擴散或藉由超音波熔接之金凸點陣列。晶粒金屬化及接合材料之組合展示為金屬24且可包括擴散障壁或其它層，以保護鄰近p層20之金屬化層的光學特性。
LED晶粒10通常來自相同晶圓，但(代替的)可為不同類型及顏色。
封裝基板12可為隨後將分離之封裝元件之陣列。圖1展示隨後將被分離之兩個封裝元件。可使用LED之任一排列，諸如LED之陣列或陣列之群。封裝基板12可由電絕緣材料AlN形成，其中使用通道及/或金屬跡線將金製接觸焊墊22連接至可焊接電極26。或者，若封裝基板12經鈍化以防短路，則其可由諸如陽極化AlSiC之導電材料形成。在一實施例中，封裝基板12為導熱的，以充當散熱器或將熱傳導至更大散熱器。最後，若適於特定應用，LED可具有附著至其上之透鏡罩或塗覆有磷光體(用於轉換藍光或紫外光以產生白光)或經進一步處理，且該封裝可焊接至印刷電路板。
圖2說明正在使用準分子雷射光束30移除之成長基板。雷射光束30在其與成長基板之介面上熔融GaN材料，允許成長基板然後起離。
圖3及圖4說明使用蝕刻移除成長基板之替代技術。成長基板32可基於矽(例如，SiC、絕緣體上碳化矽、石英上碳化矽、Si等等)使得其可使用諸如反應性離子蝕刻(RIE)之習知蝕刻技術蝕刻。蝕刻劑展示為蝕刻劑34。
可使用額外的非雷射起離技術移除成長基板。此起離技術可蝕刻掉在成長基板與LED層之間的層。舉例而言，成長基板可為SiCOI，且蝕刻劑溶液蝕刻掉絕緣體材料。隨後可起離成長基板之剩餘部分。亦可使用帶有底切蝕刻層之藍寶石基板。
亦可藉由研磨移除成長基板32。在此情況下，帶有晶粒接合至其之封裝基板12之頂面必須是平坦的。在晶粒之間沉積填充料可在研磨處理期間用以機械的支撐該等晶粒。
本文所描述之方法之不尋常的態樣為，LED形成過程在LED安裝於封裝基板12上之後繼續。在習知設計中，在安裝LED至支撐基板上之前完整地製造LED。
可將半導體處理之寬陣列應用至經轉移的LED層，以便於增強光學提取並建立電接點(僅用於垂直注入裝置)。然而，首先，必須防止封裝基板12受到該處理的影響。應注意，晶粒之精確置放(±2微米)通常必需允許可靠的微影製程步驟。
圖5中，沉積一保護層36(例如聚醯亞胺)以在隨後之處 理期間(諸如，蝕刻)保護封裝基板12。保護層藉由簡單的平坦化步驟或遮罩/蝕刻步驟自LED之頂部移除。
作為形成圖5之保護層之替代，可在UV準分子雷射起離步驟之前將UV透明材料(例如，氧化鋁)之薄(<15微米)層沉積在圖1之結構上。然後起離成長基板(圖2)將僅起離成長基板上之氧化鋁，向封裝基板12提供自對準保護層。若透明層之厚度約與LED轉移層匹配，則可達成表面之平坦化。
在圖6中，曝露的、相對較厚的GaN層16藉由使用諸如RIE之乾式蝕刻38之蝕刻薄化。在一實例中，GaN層16之經蝕刻厚度為7微米，且該蝕刻將GaN層16之厚度減少至約1微米。若所有磊晶LED層之初始厚度為9微米，則在此情況下，蝕刻造成LED層之整個厚度為3微米。薄化製程移除由雷射起離製程造成之任何損壞，以及減少了不再需要的諸如，低溫GaN晶核層及鄰近層之光學吸收層之厚度。鄰近作用層之n型披覆層之所有或一部分保持完整。
對於垂直注入型裝置而言，可需要平坦化以使得能夠成功的進行微影蝕刻。在圖7中，平坦該結構為金屬化步驟作準備。參考圖14及圖15論述了，若LED為覆晶型，則不需要平坦化及頂部金屬化。可使用簡單的機械拋光步驟執行平坦化。
在圖8中，沉積了光阻40。
在圖9中，光阻藉由UV輻射透過遮罩選擇性地曝光並顯影，以保留遮罩部分42，其中需要將經曝光的n層16與金 屬接觸。隨後之金屬層可形成指狀或其它圖案以在提供光穿過之空間的同時分散電流。或者，金屬層可製造的非常薄，以使其透明。或者，可採用諸如氧化銦錫(ITO)之透明導體以散佈電流。
在圖10中，沉積了金屬44。該金屬可為用於LED中之任何習知金屬，諸如，金、鎳、銀及用於形成金屬合金之金屬的組合。可藉由濺鍍或蒸鍍沉積該金屬。
在圖11中，藉由溶解下方的光阻及起離該金屬來完成金屬起離製程。作為圖8至圖10之替代，可首先沉積該(該等)金屬層，且可藉由使用光阻遮罩之金屬蝕刻達成金屬之微影圖案化。
在圖12中，LED之發光頂面(n層16)經粗糙化以增加光提取。在一實施例中，層16使用KOH溶劑46經光-電化學蝕刻。此在GaN表面(具有n型Si摻雜)形成"白"粗糙度。此蝕刻製程可用於進一步薄化n層16且使用在LED形成過程期間成長之蝕刻終止層在預定厚度處終止。後者之方法適用於諧振裝置設計。對於此等裝置而言，現可在LED之頂面沉積鏡面堆疊(例如，Bragg反射鏡)。額外光提取技術可包括微米或奈米級圖案化蝕刻(凹陷或光子晶體)。形成諸如凹陷或光子晶體之圖案係為吾人所熟知的。
隨後化學移除保護層36。
若須要，可將磷光體材料沉積於LED晶粒上，以改變光的波長。可使用電泳沉積(EPD)或絲網印刷技術沉積磷光體。
在圖13A中，佈線48接合至頂部金屬44及封裝基板接觸焊墊22。或者，可將圖13B所示之硬質金屬橋47沉積於金屬44與焊墊22之間。
然後使用習知技術(例如，劃線及折斷或據開)切割所產生之封裝基板12。每一封裝基板晶粒可含有一或多個同色或不同色之LED。每一封裝基板晶粒可含有其它電路，諸如偵測器、多工器、調節器，等等。可藉由(例如)接收LED透鏡罩、安裝於印刷電路板上等等進一步處理所產生之封裝元件。
圖13A或圖13B所產生之封裝元件具有直接安裝於延伸超出LED之邊界的封裝基板上之非常薄的LED。不需要支撐基板，因此排除了由支撐基板導入之熱阻及電阻。由於LED非常薄，故該等層存在很小的光學吸收。可在頂層表面提供光提取。在粗糙化該表面之情況下，提供了高表面隨機化，且產生於磊晶層中之光子經歷高頻率之隨機化事件。在事件之間的路徑長度較短及磊晶材料之吸收區的缺乏(例如，低溫GaN晶核層及鄰近高缺陷密度區之缺乏)確保較高的光提取效率。
由於高折射率材料之減少的厚度實質上減少了光模之數目且允許具有較高提取效率及輻射率之設計，故所產生的薄膜(TF)LED亦有利於諸如諧振腔及基於光子晶體之LED之諧振結構。
在一實施例中，雖然主要發光面(頂面)與封裝基板表面之間的距離小於50微米，但該距離典型更小(例如，20微 米或更小)。LED層之厚度可為10微米或更小且通常小於3微米。
圖14及圖15說明了在上述封裝方法中使用之覆晶LED 49。覆晶LED不需要任何佈線接合以接觸n或p層，使得其具有較低輪廓且不易碎。在圖14中，所有元件與圖1相同，惟在LED形成過程期間p層20及作用層18之部分被蝕刻掉及金屬50(金屬化層加接合金屬)在與p接點金屬24相同側上接觸n層16除外。可將底部填充(under fill)材料52沉積於在LED之下的空隙中，以減少LED上之熱梯度、增加附件之機械強度且防止污染物接觸LED材料。由於不需要形成頂部金屬層，故可省略圖7至圖11所示之步驟。n金屬50及p金屬24接合至在封裝基板12上之焊墊22。
圖16說明覆晶LED 54，其中在n層上以一圖案形成n層16之金屬電極56，以分散電流。金屬電極56藉由絕緣材料60與p接點金屬化58絕緣。金屬電極56之圖案可類似指狀、圓點花紋圖案或任何其它圖案。非相連金屬圖案需要一額外絕緣及導電層以與所有金屬部分接觸。
排除切割藍寶石基板晶圓之需要且允許藍寶石基板之再使用之替代方法流程亦係可能的且在下文中描述。在覆晶LED製造之後但切割之前，根據其效能對LED進行晶圓級測試並映射。
藉由用不受LED接合製程影響之區來圍繞每一封裝基板上的金屬接合區，來準備一由多個分離之封裝基板12組成之陣列，使得在接合製程期間，延伸超出所關心之LED晶 粒之封裝基板之部分不受到損壞或變得接合至晶圓上之鄰近LED晶粒。致使區域不受接合製程影響之方法包括降低高度或塗覆有諸如SiO2 之惰性模。
將帶有LED之晶圓被置放以接觸於一分離之裝基板，使得使用局部化壓力、熱及超音波攪拌之組合，以類似於先前所描述的方法，將第一個所要的LED晶粒附著至封裝基板。
隨後使用雷射起離方法將成長基板自接合的裝置分隔(藉由將封裝基板自藍寶石基板拉下)，將其局部化至晶粒區。經由裝置附件系統之光學路徑將為雷射光束所需。此基板再使用技術之額外益處在於可在成長基板分離期間將拉力維持於裝置上，增加LED吸收與雷射起離相關聯之熱衝擊的能力。
可將圖13A、圖13B、圖15及圖16之LED結構直接焊接至電路板或其它連接器。或者，可將LED結構密封至次要的外殼中。圖17為安裝於封裝內之帶有LED晶粒10之封裝基板12之一實施例的分解圖。散熱片60置放於插入模鑄引線框(insert-molded lead frame)62內。插入模鑄引線框62為(例如)在提供電路徑之金屬引線64周圍鑄模之填充的塑料材料。片60可包括可選的反射鏡罩66。附著至封裝基板12之LED晶粒10直接或間接安裝於片60。金屬引線64接合至在封裝基板12上之電極26(圖13A)。可添加光學透鏡68。
雖然已展示並描述了本發明之特定實施例，但對熟習此項技術者將顯而易見，可在其更廣泛的態樣中在不偏離本 發明的情況下做出變化及修改，且因此，所附申請專利範圍將在其範疇內涵蓋屬於本發明之真實精神及範疇之所有此等變化及修改。
10‧‧‧LED晶粒
12‧‧‧封裝基板
14‧‧‧藍寶石成長基板
16‧‧‧n型層/GaN層/n層
18‧‧‧作用層
20‧‧‧p層/p型層
22‧‧‧接觸焊墊
24‧‧‧金屬/p金屬/p接點金屬
26‧‧‧電極
30‧‧‧準分子雷射光束
32‧‧‧成長基板
34‧‧‧蝕刻劑
36‧‧‧保護層
38‧‧‧乾式蝕刻
40‧‧‧光阻
42‧‧‧遮罩部分
44‧‧‧金屬
46‧‧‧KOH溶劑
47‧‧‧硬質金屬橋
48‧‧‧佈線
49‧‧‧覆晶LED
50‧‧‧金屬/n金屬
52‧‧‧底部填充材料
56‧‧‧金屬電極
58‧‧‧p接點金屬化
60‧‧‧絕緣材料(圖16)
60‧‧‧散熱片(圖17)
62‧‧‧插入模鑄引線框
64‧‧‧金屬引線
66‧‧‧反射鏡罩
68‧‧‧光學透鏡
圖1為使用藍寶石成長基板、安裝於封裝基板上之LED晶粒之橫截面圖。
圖2為正在使用雷射移除之藍寶石成長基板之橫截面圖。
圖3為使用基於矽之成長基板、安裝於封裝基板上之LED晶粒之橫截面圖。
圖4為正在藉由蝕刻移除之基於矽之成長基板的橫截面圖。
圖5為藉由保護層保護之圖2或圖4之LED晶粒的橫截面圖。
圖6為正在藉由蝕刻薄化之曝露的LED層的橫截面圖。
圖7為正在被平坦化之LED/保護層之橫截面圖。
圖8為在光遮罩沉積之後所產生的結構之橫截面圖。
圖9為在光遮罩沉積之後所產生的結構經選擇性曝光並顯影以在該LED之頂面遮罩經選擇區域之的橫截面圖。
圖10為在金屬沉積之後所產生的結構之橫截面圖。
圖11為在金屬起離製程之後所產生的結構之橫截面圖。
圖12為經粗糙化以增強光提取之LED層之曝光部分的橫截面圖。
圖13A為在移除保護層之後且在佈線接合至頂部金屬層 之後所產生的結構之橫截面圖。
圖13B為使用金屬橋而非佈線接合所產生的結構之橫截面圖。
圖14為圖1之實施例之替代，其中覆晶LED安裝於封裝基板上。
圖15為在經歷圖2(成長基板移除)、圖5(保護層形成)、圖6(薄化蝕刻)及圖12(表面粗糙化)所說明之可應用製程步驟之後的圖14之覆晶LED的橫截面圖。
圖16為安裝於封裝基板上之覆晶LED的橫截面圖，其中用於n層之金屬電極以一圖案分佈於n層上。
圖17說明安裝且密封於外殼中之封裝基板及LED晶粒之一實施例。
12‧‧‧封裝基板
14‧‧‧藍寶石成長基板
16‧‧‧n型層/GaN層/n層
18‧‧‧作用層
20‧‧‧p層/p型層
22‧‧‧接觸焊墊
24‧‧‧金屬/p金屬
49‧‧‧覆晶LED
50‧‧‧金屬/n金屬
52‧‧‧底部填充材料

Claims (42)

  1. 一種發光裝置，其包含：一發光二極體(LED)部分，其包含：一第一導電類型之一第一磊晶層，其形成於一成長基板上，該成長基板已自該LED部分移除；一第二導電類型之一第二磊晶層，其形成於該成長基板上；一作用層，其安置於該第一磊晶層與該第二磊晶層之間；一主要發光面，其在實質上平行於該作用層之該第一磊晶層之一第一側上；一封裝基板，其上安裝該LED部分；及一第一金屬層，其安置於該封裝基板與該第二磊晶層之間，該第一金屬層將在該封裝基板上之一導體電連接至該第二磊晶層，在該導體與該第二磊晶層之間無支撐基板，及一第二金屬層，其安置於該封裝基板與該第一磊晶層之間，其中該第一與第二金屬層皆係安置於相對該第一側之該LED部分之一第二側上；其中在該主要發光面與該封裝基板之一部分之間的一最近距離不大於50微米，且其中該封裝基板之一橫向範圍(extent)超過該LED部分之橫向範圍。
  2. 如請求項1之裝置，其進一步包含在該第一金屬層與在該封裝上之該導體之間的一焊接接合。
  3. 如請求項1之裝置，其進一步包含在該第一金屬層與在 該封裝上之該導體之間的一超音波熔接。
  4. 如請求項1之裝置，其進一步包含在該第一金屬層與在該封裝上之該導體之間的一熱壓縮接合。
  5. 如請求項1之裝置，其進一步包含在該第一金屬層與在該封裝上之該導體之間的一相互擴散接合。
  6. 如請求項1之裝置，其中該LED部分為一覆晶。
  7. 如請求項1之裝置，其中該LED部分為一覆晶，且該第一金屬層係以一圖案所形成。
  8. 如請求項1之裝置，其中該主要發光面併入一光提取特徵。
  9. 如請求項1之裝置，其中該LED係由基於氮化鎵或磷化鎵之材料所形成。
  10. 如請求項1之裝置，其進一步包含在該封裝基板上之複數個LED，每一LED之成長基板經移除且每一LED除該封裝基板外無支撐基板。
  11. 如請求項1之裝置，其進一步包含在該封裝基板上之複數個LED，每一LED之成長基板經移除且每一LED除該封裝基板外無支撐基板，該等複數個LED以陣列之群排列。
  12. 如請求項1之裝置，其中該第一磊晶層包含該第一導電類型之複數個磊晶層，且其中該第二磊晶層包含該第二導電類型之複數個磊晶層。
  13. 如請求項1之裝置，其進一步包含在該LED部分上之一磷光體。
  14. 如請求項1之裝置，其進一步包含在該LED部分上之一光學元件。
  15. 如請求項1之裝置，其中該封裝基板導熱以充當用於該LED部分之一散熱器。
  16. 如請求項1之裝置，其中該等LED層具有一小於3微米之厚度。
  17. 如請求項1之裝置，其中該等LED層具有一小於10微米之厚度。
  18. 如請求項1之裝置，其進一步包含圍繞該LED部分及封裝基板之一外殼，該外殼含有自該外殼延伸且電耦接至該封裝基板之金屬引線。
  19. 如請求項1之裝置，其中該主要發光面具有形成於其內之光提取特徵。
  20. 如請求項1之裝置，其中在已移除該成長基板之後且在該LED部分已安裝於該封裝基板上之後，該第一磊晶層已予以薄化。
  21. 一種製造一發光裝置之方法，其包含：在一成長基板上成長發光二極體(LED)層，該等LED層包含形成於該成長基板上之一第一導電類型之一第一磊晶層、一第二導電類型之一第二磊晶層，及安置於該第一與該第二磊晶層之間之一作用層，其中在該第一磊晶層之一第一側上之一主要發光面實質上平行於該作用層，該等LED層形成至少一個個別LED；提供一封裝基板，其中該封裝基板之一橫向範圍超過 一個別LED之橫向範圍，該封裝基板包含一支撐表面，其上具有一或多個電接觸焊墊用於電連接至該第一及該第二磊晶層，該等接觸焊墊電連接至金屬引線，該等金屬引線係用於連接至封裝端子；將附著至該成長基板之該等LED層置放於該封裝基板上，使得該第二磊晶層朝向在該封裝基板上之一第一接觸焊墊；使用安置於該封裝基板與該第二磊晶層之間的一金屬介面將該第二磊晶層接合至該第一接觸焊墊，其中在該主要發光面與該封裝基板之一部分之間的一最近距離不大於50微米；移除該成長基板；及在已經移除該成長基板之後進一步處理該等LED層。
  22. 如請求項21之方法，其中該成長基板為藍寶石，且移除該成長基板包含執行一雷射起離製程。
  23. 如請求項21之方法，其中該成長基板包含矽，且移除該成長基板包含執行一蝕刻製程。
  24. 如請求項21之方法，其中該等LED層包含AlInGaP，且該成長基板包含GaAs或Ge。
  25. 如請求項21之方法，其進一步包含在圍繞該LED部分及封裝基板之一外殼中安裝該LED部分及封裝基板，及將自該外殼延伸之金屬引線電連接至在該封裝基板上之接觸區。
  26. 如請求項21之方法，其中置放該等LED層包含將複數個 LED置放於該封裝基板上。
  27. 如請求項21之方法，其進一步包含：在該等LED層已經置放於該封裝基板上之後，在該封裝基板上沉積一保護層，以保護該封裝基板；及蝕刻該第一磊晶層之一部分。
  28. 如請求項27之方法，其中蝕刻該第一磊晶層之一部分包含蝕刻該第一磊晶層之厚度的至少50%。
  29. 如請求項21之方法，其進一步包含在該第一磊晶層與在該封裝基板上之一接觸焊墊之間提供一電連接器。
  30. 如請求項29之方法，其中該電連接器為一佈線。
  31. 如請求項29之方法，其中該電連接器為一金屬橋。
  32. 如請求項29之方法，其中該LED為一覆晶，其中提供該電連接器包含將該第一磊晶層接合至在該封裝基板上之一接觸焊墊。
  33. 如請求項21之方法，其進一步包含在已經移除該成長基板之後切割該封裝基板，每一封裝基板晶粒具有安裝於其上之一或多個LED。
  34. 如請求項21之方法，其中成長LED層包含成長基於氮化鎵之LED層。
  35. 如請求項21之方法，其進一步包含在將該等LED層置放於該封裝基板上之前切割該等LED層及成長基板。
  36. 如請求項21之方法，其中將該等LED層置放於該封裝基板上包含：在切割該等LED層及該成長基板之前將該等LED層置放於該封裝基板上，其中移除該成長基板包含 完整地移除該整個成長基板，且進一步包含在移除該成長基板之後切割該封裝基板。
  37. 如請求項21之方法，其中該第一磊晶層包含該第一導電類型之複數個磊晶層，且其中該第二磊晶層包含該第二導電類型之複數個磊晶層。
  38. 如請求項21之方法，其進一步包含在移除該成長基板之後蝕刻該第一磊晶層，使得該等LED層具有一小於3微米之厚度。
  39. 如請求項21之方法，其進一步包含在移除該成長基板之後蝕刻該第一磊晶層，使得該等LED層具有一小於10微米之厚度。
  40. 如請求項21之方法，其中進一步處理該等LED層包含在該主要發光面中形成光提取特徵。
  41. 如請求項40之方法，其中形成光提取特徵係由粗糙化該主要發光面、圖案化該主要發光面、凹化該主要發光面或形成一光子晶體所組成。
  42. 如請求項21之方法，其中進一步處理該等LED層包含薄化該第一磊晶層。
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