TWI400822B - 單石式光電半導體本體及其製造方法 - Google Patents
單石式光電半導體本體及其製造方法 Download PDFInfo
- Publication number
- TWI400822B TWI400822B TW098106285A TW98106285A TWI400822B TW I400822 B TWI400822 B TW I400822B TW 098106285 A TW098106285 A TW 098106285A TW 98106285 A TW98106285 A TW 98106285A TW I400822 B TWI400822 B TW I400822B
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- semiconductor body
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Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008011848A DE102008011848A1 (de) | 2008-02-29 | 2008-02-29 | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| DE102008016525A DE102008016525A1 (de) | 2008-03-31 | 2008-03-31 | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201001753A TW201001753A (en) | 2010-01-01 |
| TWI400822B true TWI400822B (zh) | 2013-07-01 |
Family
ID=40802134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098106285A TWI400822B (zh) | 2008-02-29 | 2009-02-27 | 單石式光電半導體本體及其製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8643034B2 (enExample) |
| EP (1) | EP2245667B1 (enExample) |
| JP (1) | JP5992662B2 (enExample) |
| KR (1) | KR101571577B1 (enExample) |
| CN (1) | CN101960601B (enExample) |
| TW (1) | TWI400822B (enExample) |
| WO (1) | WO2009106063A1 (enExample) |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008011848A1 (de) | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| US8643034B2 (en) | 2008-02-29 | 2014-02-04 | Osram Opto Semiconductors Gmbh | Monolithic, optoelectronic semiconductor body and method for the production thereof |
| KR100986570B1 (ko) * | 2009-08-31 | 2010-10-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| DE102009060747B4 (de) * | 2009-12-30 | 2025-01-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip |
| KR101106151B1 (ko) | 2009-12-31 | 2012-01-20 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
| KR100986560B1 (ko) * | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| US8604498B2 (en) * | 2010-03-26 | 2013-12-10 | Tsmc Solid State Lighting Ltd. | Single phosphor layer photonic device for generating white light or color lights |
| DE102010013494A1 (de) | 2010-03-31 | 2011-10-06 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| KR101115570B1 (ko) | 2010-06-14 | 2012-03-05 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
| DE102010027679A1 (de) * | 2010-07-20 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| US8598614B2 (en) | 2010-08-30 | 2013-12-03 | Epistar Corporation | Light-emitting devices |
| KR101142965B1 (ko) * | 2010-09-24 | 2012-05-08 | 서울반도체 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
| US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| DE102010048159B4 (de) | 2010-10-11 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip |
| EP2442374B1 (en) | 2010-10-12 | 2016-09-21 | LG Innotek Co., Ltd. | Light emitting device |
| US8476649B2 (en) | 2010-12-16 | 2013-07-02 | Micron Technology, Inc. | Solid state lighting devices with accessible electrodes and methods of manufacturing |
| TWI488331B (zh) | 2011-03-23 | 2015-06-11 | Epistar Corp | 發光二極體陣列 |
| DE102011015821B4 (de) * | 2011-04-01 | 2023-04-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
| CN102760745B (zh) * | 2011-04-25 | 2016-04-20 | 晶元光电股份有限公司 | 发光二极管阵列 |
| KR102021273B1 (ko) * | 2011-05-27 | 2019-09-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 카바졸 화합물, 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
| US9299742B2 (en) | 2011-08-15 | 2016-03-29 | Micron Technology, Inc. | High-voltage solid-state transducers and associated systems and methods |
| KR20130021300A (ko) * | 2011-08-22 | 2013-03-05 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지, 및 라이트 유닛 |
| KR101830719B1 (ko) * | 2011-09-01 | 2018-02-21 | 엘지이노텍 주식회사 | 발광 소자 |
| DE102011116232B4 (de) | 2011-10-17 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| KR101321002B1 (ko) * | 2011-12-06 | 2013-10-29 | 안상정 | 반도체 발광소자 |
| DE102011056888A1 (de) * | 2011-12-22 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
| DE102012101160A1 (de) | 2012-02-14 | 2013-08-14 | Osram Opto Semiconductors Gmbh | Lichtquellenmodul |
| DE102012101393A1 (de) | 2012-02-21 | 2013-08-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
| US9450152B2 (en) | 2012-05-29 | 2016-09-20 | Micron Technology, Inc. | Solid state transducer dies having reflective features over contacts and associated systems and methods |
| US10388690B2 (en) * | 2012-08-07 | 2019-08-20 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| US10804316B2 (en) * | 2012-08-07 | 2020-10-13 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| DE102012108879B4 (de) * | 2012-09-20 | 2024-03-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip mit mehreren nebeneinander angeordneten aktiven Bereichen |
| JP5924231B2 (ja) * | 2012-10-24 | 2016-05-25 | 日亜化学工業株式会社 | 半導体発光素子 |
| DE102012112302A1 (de) * | 2012-12-14 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
| JP6067400B2 (ja) * | 2013-02-12 | 2017-01-25 | 株式会社東芝 | 半導体発光素子 |
| KR102065390B1 (ko) * | 2013-02-15 | 2020-01-13 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 라이트 유닛 |
| DE102013102667A1 (de) * | 2013-03-15 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung |
| KR102098110B1 (ko) * | 2013-04-11 | 2020-04-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 라이트 유닛 |
| JP6100598B2 (ja) * | 2013-04-25 | 2017-03-22 | スタンレー電気株式会社 | 半導体発光素子及び半導体発光装置 |
| DE102013212294A1 (de) * | 2013-06-26 | 2014-12-31 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| KR102098135B1 (ko) * | 2013-07-12 | 2020-04-08 | 엘지이노텍 주식회사 | 발광소자 |
| EP3131129B1 (en) | 2014-04-07 | 2020-07-15 | LG Innotek Co., Ltd. | Light-emitting element |
| KR102163956B1 (ko) * | 2014-04-07 | 2020-10-12 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| KR102163967B1 (ko) * | 2014-04-16 | 2020-10-12 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| KR102153125B1 (ko) * | 2014-06-11 | 2020-09-07 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| KR102212666B1 (ko) * | 2014-06-27 | 2021-02-05 | 엘지이노텍 주식회사 | 발광소자 |
| DE102015104144A1 (de) * | 2015-03-19 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
| KR102299735B1 (ko) * | 2015-04-13 | 2021-09-10 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 조명시스템 |
| CN104795474B (zh) * | 2015-04-20 | 2018-10-16 | 映瑞光电科技(上海)有限公司 | 大功率led芯片及其制造方法 |
| DE102015111574A1 (de) | 2015-07-16 | 2017-01-19 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung |
| DE102015112538B4 (de) | 2015-07-30 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements |
| KR102378952B1 (ko) * | 2015-08-27 | 2022-03-25 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 이를 포함하는 발광소자 패키지 |
| FR3048066B1 (fr) * | 2016-02-24 | 2018-03-23 | Valeo Vision | Dispositif lumineux avec une source lumineuse a batonnets lumineux pour differentes fonctions photometriques |
| CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
| DE102018119688B4 (de) * | 2018-08-14 | 2024-06-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements |
| JP6909983B2 (ja) * | 2018-11-29 | 2021-07-28 | 日亜化学工業株式会社 | 発光素子 |
| DE102019103638A1 (de) | 2019-02-13 | 2020-08-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
| JP7014973B2 (ja) | 2019-08-28 | 2022-02-02 | 日亜化学工業株式会社 | 発光装置 |
| TWI712180B (zh) | 2019-10-22 | 2020-12-01 | 錼創顯示科技股份有限公司 | 微型發光二極體晶粒及微型發光二極體晶圓 |
| CN110707191B (zh) * | 2019-10-22 | 2021-11-16 | 錼创显示科技股份有限公司 | 微型发光二极管晶粒及微型发光二极管晶圆 |
| EP3905326B1 (en) | 2020-04-28 | 2023-01-04 | Nichia Corporation | Light-emitting device |
| CN115732533A (zh) * | 2022-11-29 | 2023-03-03 | 厦门三安光电有限公司 | 发光组件、发光元件及制作方法 |
| CN115799294A (zh) * | 2022-11-29 | 2023-03-14 | 厦门三安光电有限公司 | 发光元件、发光组件及制作方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5952681A (en) * | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
| US20050035354A1 (en) * | 2003-08-14 | 2005-02-17 | Dicon Fiberoptics, Inc | Light emiting diodes with current spreading layer |
| TWI254469B (en) * | 2004-04-14 | 2006-05-01 | Osram Opto Semiconductors Gmbh | Luminous diode chip |
| US20060113548A1 (en) * | 2004-11-29 | 2006-06-01 | Ching-Chung Chen | Light emitting diode |
| US20060163589A1 (en) * | 2005-01-21 | 2006-07-27 | Zhaoyang Fan | Heterogeneous integrated high voltage DC/AC light emitter |
| US20070090377A1 (en) * | 2005-10-20 | 2007-04-26 | Epistar Corporation | Light emitting device and method of forming the same |
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| US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| WO1998031055A1 (en) | 1997-01-09 | 1998-07-16 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| US5831277A (en) | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
| US5798691A (en) * | 1997-03-20 | 1998-08-25 | Tim Kao; Nien Tsu | Accessory brake light system for automobile |
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| DE19955747A1 (de) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
| US6514782B1 (en) | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
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| JP4151284B2 (ja) | 2001-03-05 | 2008-09-17 | 日亜化学工業株式会社 | 窒化物半導体発光素子及び発光装置並びにそれらの製造方法 |
| US6635902B1 (en) | 2002-05-24 | 2003-10-21 | Para Light Electronics Co., Ltd. | Serial connection structure of light emitting diode chip |
| TWI249148B (en) | 2004-04-13 | 2006-02-11 | Epistar Corp | Light-emitting device array having binding layer |
| JP4474892B2 (ja) * | 2003-10-14 | 2010-06-09 | 日亜化学工業株式会社 | フリップチップ型led |
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| DE102007022947B4 (de) | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| US8643034B2 (en) | 2008-02-29 | 2014-02-04 | Osram Opto Semiconductors Gmbh | Monolithic, optoelectronic semiconductor body and method for the production thereof |
-
2009
- 2009-02-25 US US12/920,317 patent/US8643034B2/en active Active
- 2009-02-25 JP JP2010547951A patent/JP5992662B2/ja active Active
- 2009-02-25 KR KR1020107019882A patent/KR101571577B1/ko active Active
- 2009-02-25 WO PCT/DE2009/000267 patent/WO2009106063A1/de not_active Ceased
- 2009-02-25 CN CN2009801070992A patent/CN101960601B/zh active Active
- 2009-02-25 EP EP09714749.0A patent/EP2245667B1/de active Active
- 2009-02-27 TW TW098106285A patent/TWI400822B/zh not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5952681A (en) * | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
| US20050035354A1 (en) * | 2003-08-14 | 2005-02-17 | Dicon Fiberoptics, Inc | Light emiting diodes with current spreading layer |
| TWI254469B (en) * | 2004-04-14 | 2006-05-01 | Osram Opto Semiconductors Gmbh | Luminous diode chip |
| US20060113548A1 (en) * | 2004-11-29 | 2006-06-01 | Ching-Chung Chen | Light emitting diode |
| US20060163589A1 (en) * | 2005-01-21 | 2006-07-27 | Zhaoyang Fan | Heterogeneous integrated high voltage DC/AC light emitter |
| US20070090377A1 (en) * | 2005-10-20 | 2007-04-26 | Epistar Corporation | Light emitting device and method of forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US8643034B2 (en) | 2014-02-04 |
| TW201001753A (en) | 2010-01-01 |
| KR20100134581A (ko) | 2010-12-23 |
| EP2245667B1 (de) | 2018-05-09 |
| KR101571577B1 (ko) | 2015-11-24 |
| CN101960601B (zh) | 2013-02-20 |
| CN101960601A (zh) | 2011-01-26 |
| US20110101390A1 (en) | 2011-05-05 |
| EP2245667A1 (de) | 2010-11-03 |
| WO2009106063A1 (de) | 2009-09-03 |
| JP5992662B2 (ja) | 2016-09-14 |
| JP2011513957A (ja) | 2011-04-28 |
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