TWI400822B - 單石式光電半導體本體及其製造方法 - Google Patents

單石式光電半導體本體及其製造方法 Download PDF

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Publication number
TWI400822B
TWI400822B TW098106285A TW98106285A TWI400822B TW I400822 B TWI400822 B TW I400822B TW 098106285 A TW098106285 A TW 098106285A TW 98106285 A TW98106285 A TW 98106285A TW I400822 B TWI400822 B TW I400822B
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Taiwan
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partial
layer
contact
wire
semiconductor body
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TW098106285A
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English (en)
Chinese (zh)
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TW201001753A (en
Inventor
卡羅 英格
魯茲 何佩
派翠克 羅德
法蘭克 辛格
馬丁 史翠斯保
Original Assignee
歐斯朗奧托半導體股份有限公司
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Priority claimed from DE102008011848A external-priority patent/DE102008011848A1/de
Priority claimed from DE102008016525A external-priority patent/DE102008016525A1/de
Application filed by 歐斯朗奧托半導體股份有限公司 filed Critical 歐斯朗奧托半導體股份有限公司
Publication of TW201001753A publication Critical patent/TW201001753A/zh
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Publication of TWI400822B publication Critical patent/TWI400822B/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8312Electrodes characterised by their shape extending at least partially through the bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/813Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW098106285A 2008-02-29 2009-02-27 單石式光電半導體本體及其製造方法 TWI400822B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008011848A DE102008011848A1 (de) 2008-02-29 2008-02-29 Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008016525A DE102008016525A1 (de) 2008-03-31 2008-03-31 Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen

Publications (2)

Publication Number Publication Date
TW201001753A TW201001753A (en) 2010-01-01
TWI400822B true TWI400822B (zh) 2013-07-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW098106285A TWI400822B (zh) 2008-02-29 2009-02-27 單石式光電半導體本體及其製造方法

Country Status (7)

Country Link
US (1) US8643034B2 (enExample)
EP (1) EP2245667B1 (enExample)
JP (1) JP5992662B2 (enExample)
KR (1) KR101571577B1 (enExample)
CN (1) CN101960601B (enExample)
TW (1) TWI400822B (enExample)
WO (1) WO2009106063A1 (enExample)

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Also Published As

Publication number Publication date
US8643034B2 (en) 2014-02-04
TW201001753A (en) 2010-01-01
KR20100134581A (ko) 2010-12-23
EP2245667B1 (de) 2018-05-09
KR101571577B1 (ko) 2015-11-24
CN101960601B (zh) 2013-02-20
CN101960601A (zh) 2011-01-26
US20110101390A1 (en) 2011-05-05
EP2245667A1 (de) 2010-11-03
WO2009106063A1 (de) 2009-09-03
JP5992662B2 (ja) 2016-09-14
JP2011513957A (ja) 2011-04-28

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