CN101960601B - 单片的光电子半导体本体及其制造方法 - Google Patents

单片的光电子半导体本体及其制造方法 Download PDF

Info

Publication number
CN101960601B
CN101960601B CN2009801070992A CN200980107099A CN101960601B CN 101960601 B CN101960601 B CN 101960601B CN 2009801070992 A CN2009801070992 A CN 2009801070992A CN 200980107099 A CN200980107099 A CN 200980107099A CN 101960601 B CN101960601 B CN 101960601B
Authority
CN
China
Prior art keywords
layer
plane
contact
subsection
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009801070992A
Other languages
English (en)
Chinese (zh)
Other versions
CN101960601A (zh
Inventor
卡尔·恩格尔
弗兰克·辛格
帕特里克·罗德
卢茨·赫佩尔
马丁·斯特拉斯伯格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102008011848A external-priority patent/DE102008011848A1/de
Priority claimed from DE102008016525A external-priority patent/DE102008016525A1/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101960601A publication Critical patent/CN101960601A/zh
Application granted granted Critical
Publication of CN101960601B publication Critical patent/CN101960601B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN2009801070992A 2008-02-29 2009-02-25 单片的光电子半导体本体及其制造方法 Active CN101960601B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008011848A DE102008011848A1 (de) 2008-02-29 2008-02-29 Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008011848.6 2008-02-29
DE102008016525A DE102008016525A1 (de) 2008-03-31 2008-03-31 Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008016525.5 2008-03-31
PCT/DE2009/000267 WO2009106063A1 (de) 2008-02-29 2009-02-25 Monolithischer, optoelektronischer halbleiterkörper und verfahren zur herstellung eines solchen

Publications (2)

Publication Number Publication Date
CN101960601A CN101960601A (zh) 2011-01-26
CN101960601B true CN101960601B (zh) 2013-02-20

Family

ID=40802134

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801070992A Active CN101960601B (zh) 2008-02-29 2009-02-25 单片的光电子半导体本体及其制造方法

Country Status (7)

Country Link
US (1) US8643034B2 (enExample)
EP (1) EP2245667B1 (enExample)
JP (1) JP5992662B2 (enExample)
KR (1) KR101571577B1 (enExample)
CN (1) CN101960601B (enExample)
TW (1) TWI400822B (enExample)
WO (1) WO2009106063A1 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008011848A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
KR101571577B1 (ko) 2008-02-29 2015-11-24 오스람 옵토 세미컨덕터스 게엠베하 모놀리식 광전자 반도체 본체 및 그 제조 방법
KR100986570B1 (ko) * 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
KR101106151B1 (ko) 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
US8604498B2 (en) * 2010-03-26 2013-12-10 Tsmc Solid State Lighting Ltd. Single phosphor layer photonic device for generating white light or color lights
DE102010013494A1 (de) 2010-03-31 2011-10-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR101115570B1 (ko) 2010-06-14 2012-03-05 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
DE102010027679A1 (de) * 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
TWI533484B (zh) 2010-08-30 2016-05-11 晶元光電股份有限公司 發光元件
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
DE102010048159B4 (de) * 2010-10-11 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
TWI532214B (zh) 2010-10-12 2016-05-01 Ｌｇ伊諾特股份有限公司 發光元件及其封裝
US8476649B2 (en) * 2010-12-16 2013-07-02 Micron Technology, Inc. Solid state lighting devices with accessible electrodes and methods of manufacturing
TWI488331B (zh) * 2011-03-23 2015-06-11 Epistar Corp 發光二極體陣列
DE102011015821B4 (de) * 2011-04-01 2023-04-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
CN102760745B (zh) * 2011-04-25 2016-04-20 晶元光电股份有限公司 发光二极管阵列
KR102021273B1 (ko) * 2011-05-27 2019-09-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 카바졸 화합물, 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
US9299742B2 (en) 2011-08-15 2016-03-29 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
KR20130021300A (ko) * 2011-08-22 2013-03-05 엘지이노텍 주식회사 발광소자, 발광소자 패키지, 및 라이트 유닛
KR101830719B1 (ko) * 2011-09-01 2018-02-21 엘지이노텍 주식회사 발광 소자
DE102011116232B4 (de) 2011-10-17 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
KR101321002B1 (ko) * 2011-12-06 2013-10-29 안상정 반도체 발광소자
DE102011056888A1 (de) * 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
DE102012101160A1 (de) 2012-02-14 2013-08-14 Osram Opto Semiconductors Gmbh Lichtquellenmodul
DE102012101393A1 (de) 2012-02-21 2013-08-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
US10804316B2 (en) 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10388690B2 (en) 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
DE102012108879B4 (de) * 2012-09-20 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit mehreren nebeneinander angeordneten aktiven Bereichen
JP5924231B2 (ja) * 2012-10-24 2016-05-25 日亜化学工業株式会社 半導体発光素子
DE102012112302A1 (de) * 2012-12-14 2014-06-18 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
JP6067400B2 (ja) * 2013-02-12 2017-01-25 株式会社東芝 半導体発光素子
KR102065390B1 (ko) 2013-02-15 2020-01-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
DE102013102667A1 (de) * 2013-03-15 2014-10-02 Osram Opto Semiconductors Gmbh Anzeigevorrichtung
KR102098110B1 (ko) * 2013-04-11 2020-04-08 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
JP6100598B2 (ja) 2013-04-25 2017-03-22 スタンレー電気株式会社 半導体発光素子及び半導体発光装置
DE102013212294A1 (de) * 2013-06-26 2014-12-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR102098135B1 (ko) * 2013-07-12 2020-04-08 엘지이노텍 주식회사 발광소자
KR102163956B1 (ko) * 2014-04-07 2020-10-12 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102163967B1 (ko) * 2014-04-16 2020-10-12 엘지이노텍 주식회사 발광소자 및 조명시스템
CN106165128B (zh) * 2014-04-07 2018-11-09 Lg 伊诺特有限公司 发光元件和照明系统
KR102153125B1 (ko) * 2014-06-11 2020-09-07 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102212666B1 (ko) * 2014-06-27 2021-02-05 엘지이노텍 주식회사 발광소자
DE102015104144A1 (de) * 2015-03-19 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
KR102299735B1 (ko) * 2015-04-13 2021-09-10 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 조명시스템
CN104795474B (zh) * 2015-04-20 2018-10-16 映瑞光电科技(上海)有限公司 大功率led芯片及其制造方法
DE102015111574A1 (de) * 2015-07-16 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung
DE102015112538B4 (de) * 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
KR102378952B1 (ko) * 2015-08-27 2022-03-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 발광소자 패키지
FR3048066B1 (fr) * 2016-02-24 2018-03-23 Valeo Vision Dispositif lumineux avec une source lumineuse a batonnets lumineux pour differentes fonctions photometriques
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
JP6909983B2 (ja) * 2018-11-29 2021-07-28 日亜化学工業株式会社 発光素子
DE102019103638A1 (de) 2019-02-13 2020-08-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
JP7014973B2 (ja) 2019-08-28 2022-02-02 日亜化学工業株式会社 発光装置
CN110707191B (zh) * 2019-10-22 2021-11-16 錼创显示科技股份有限公司 微型发光二极管晶粒及微型发光二极管晶圆
TWI712180B (zh) 2019-10-22 2020-12-01 錼創顯示科技股份有限公司 微型發光二極體晶粒及微型發光二極體晶圓
EP3905326B1 (en) 2020-04-28 2023-01-04 Nichia Corporation Light-emitting device
CN115799294A (zh) * 2022-11-29 2023-03-14 厦门三安光电有限公司 发光元件、发光组件及制作方法
CN115732533A (zh) * 2022-11-29 2023-03-03 厦门三安光电有限公司 发光组件、发光元件及制作方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
CN1964093B (zh) * 1997-01-09 2012-06-27 日亚化学工业株式会社 氮化物半导体元器件
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
US5798691A (en) * 1997-03-20 1998-08-25 Tim Kao; Nien Tsu Accessory brake light system for automobile
EP2169733B1 (de) * 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
US5952681A (en) 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
JP4960665B2 (ja) * 2006-08-11 2012-06-27 キヤノン株式会社 発光素子アレイ及び画像形成装置
JP4151284B2 (ja) 2001-03-05 2008-09-17 日亜化学工業株式会社 窒化物半導体発光素子及び発光装置並びにそれらの製造方法
US6635902B1 (en) * 2002-05-24 2003-10-21 Para Light Electronics Co., Ltd. Serial connection structure of light emitting diode chip
TWI249148B (en) 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
US6958494B2 (en) * 2003-08-14 2005-10-25 Dicon Fiberoptics, Inc. Light emitting diodes with current spreading layer
JP4474892B2 (ja) * 2003-10-14 2010-06-09 日亜化学工業株式会社 フリップチップ型ｌｅｄ
TWI317180B (en) 2004-02-20 2009-11-11 Osram Opto Semiconductors Gmbh Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component
TWI254469B (en) 2004-04-14 2006-05-01 Osram Opto Semiconductors Gmbh Luminous diode chip
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
JP3904571B2 (ja) * 2004-09-02 2007-04-11 ローム株式会社 半導体発光装置
US20060113548A1 (en) * 2004-11-29 2006-06-01 Ching-Chung Chen Light emitting diode
CN101073155B (zh) 2004-12-06 2010-09-29 皇家飞利浦电子股份有限公司 作为小型颜色可变光源的单片led
DE112005002889B4 (de) 2004-12-14 2015-07-23 Seoul Viosys Co., Ltd. Licht emittierendes Bauelement mit einer Mehrzahl Licht emittierender Zellen und Baugruppen-Montage desselben
US7221044B2 (en) 2005-01-21 2007-05-22 Ac Led Lighting, L.L.C. Heterogeneous integrated high voltage DC/AC light emitter
JP4462249B2 (ja) 2005-09-22 2010-05-12 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
TWI291246B (en) * 2005-10-20 2007-12-11 Epistar Corp Light emitting device and method of forming the same
TWI331406B (en) * 2005-12-14 2010-10-01 Advanced Optoelectronic Tech Single chip with multi-led
TW200739952A (en) * 2005-12-22 2007-10-16 Rohm Co Ltd Light emitting device and illumination instrument
JP2007324581A (ja) 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法
DE102006055884B4 (de) * 2006-09-29 2023-03-16 Pictiva Displays International Limited Strahlungsemittierende Vorrichtung und Verfahren zu ihrer Herstellung
KR20090119862A (ko) 2007-01-22 2009-11-20 크리 엘이디 라이팅 솔루션즈, 인크. 고장 내성 발광기, 고장 내성 발광기를 포함하는 시스템 및 고장 내성 발광기를 제조하는 방법
DE102007019775B4 (de) 2007-04-26 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
KR101571577B1 (ko) 2008-02-29 2015-11-24 오스람 옵토 세미컨덕터스 게엠베하 모놀리식 광전자 반도체 본체 및 그 제조 방법

Also Published As

Publication number Publication date
EP2245667A1 (de) 2010-11-03
KR20100134581A (ko) 2010-12-23
KR101571577B1 (ko) 2015-11-24
WO2009106063A1 (de) 2009-09-03
EP2245667B1 (de) 2018-05-09
TW201001753A (en) 2010-01-01
JP5992662B2 (ja) 2016-09-14
TWI400822B (zh) 2013-07-01
US20110101390A1 (en) 2011-05-05
CN101960601A (zh) 2011-01-26
JP2011513957A (ja) 2011-04-28
US8643034B2 (en) 2014-02-04

Similar Documents

Publication Publication Date Title
CN101960601B (zh) 单片的光电子半导体本体及其制造方法
CN101960602B (zh) 光电子半导体本体及其制造方法
KR102170243B1 (ko) 공융 금속-합금 본딩을 이용한 다중 접합 발광 다이오드 및 이의 제조방법
CN101859758B (zh) 高电压低电流面发射led
KR101423723B1 (ko) 발광 다이오드 패키지
US7009199B2 (en) Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
US20100219426A1 (en) Light emitting device having vertically stacked light emitting diodes
CN101073155A (zh) 作为小型颜色可变光源的单片led
CN101740600A (zh) 发光器件以及具有该发光器件的发光器件封装
US11862616B2 (en) Multi wavelength light emitting device and method of fabricating the same
US6120909A (en) Monolithic silicon-based nitride display device
KR20110098600A (ko) 멀티셀 어레이를 갖는 반도체 발광장치 및 이의 제조방법
KR20170139355A (ko) 발광소자 및 이를 포함하는 표시장치
KR100495004B1 (ko) 발광다이오드 및 그 제조방법
JP7392138B2 (ja) オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法
KR100489037B1 (ko) 발광 다이오드 및 그 제조방법
CN102376864B (zh) 发光元件
KR101547322B1 (ko) 발광 다이오드 패키지
KR100670929B1 (ko) 플립칩 구조의 발광 소자 및 이의 제조 방법
KR100872248B1 (ko) 교류구동 발광장치
CN107278334A (zh) 高电压驱动发光器件及其制造方法
KR20230114562A (ko) 마이크로 발광소자
KR20180136053A (ko) 반도체소자 및 반도체소자 패키지
KR20110087796A (ko) 반도체 발광소자

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant